Index of /~yep/Papers

[ICO]NameLast modifiedSizeDescription
[PARENTDIR]Parent Directory  -  
[ ]2D Materials_2017_Iyer_2D_Mater._4_021032.pdf2017-07-03 12:01 683K 
[ ]2D Materials_2019_UIUC.pdf2019-06-21 13:23 2.6M 
[ ]2D Materials_Te_Huang_2020.pdf2019-11-11 15:17 2.5M 
[ ]2dm_3_2_024003.pdf2016-03-28 16:58 1.8M 
[ ]13-02.pdf2009-12-10 16:33 355K 
[ ]13-04.pdf2009-12-10 16:33 515K 
[ ]35-05.pdf2009-12-10 16:33 823K 
[ ]2015 Nanotechnology_Nam.pdf2015-01-16 13:31 896K 
[ ]2020 JEDS_FE_Channel_Dependent_Final Paper.pdf2020-08-22 15:45 704K 
[ ]ACS AEM_FEDE Stack_2019_Final.pdf2019-06-21 10:45 1.5M 
[ ]ACS AEM_FEDE Stack_2019_Final_Supplement.pdf2019-06-21 10:46 355K 
[ ]ACS Nano 2D Se.pdf2017-11-03 15:04 4.9M 
[ ]ACS Nano 2020 Yang Chai 1D Se.pdf2020-09-08 15:34 4.0M 
[ ]ACS Nano BP Contacts_Final Printed Version.pdf2014-10-28 17:07 2.6M 
[ ]ACS Nano ITO 1nm 2020_ASAP.pdf2020-08-27 20:04 1.7M 
[ ]ACS Nano ITO 1nm 2020_Final.pdf2021-01-17 17:12 1.9M 
[ ]ACS Nano ITO 1nm_SI.pdf2020-08-27 20:08 1.0M 
[ ]ACS Nano_2021_Asymmetry FSJ.pdf2021-09-16 14:00 1.4M 
[ ]ACS Nano_2021_Asymmetry FSJ_SI.pdf2021-09-16 14:13 197K 
[ ]ACS Nano_2024_SC.pdf2024-06-04 16:57 4.2M 
[ ]ACS Nano_BP_MoS2_Photo Diode.pdf2014-09-24 09:39 4.4M 
[ ]ACS Nano_BP_MoS2_Photo Transistor_Deng_ASAP.pdf2014-08-14 13:54 4.4M 
[ ]ACS Nano_BP_Plasmonic_2018.pdf2018-07-06 12:12 3.3M 
[ ]ACS Nano_CIPS_2018.pdf2018-08-27 12:27 2.2M 
[ ]ACS Nano_CIPS_ECE_2019_asap.pdf2019-08-06 10:25 3.2M 
[ ]ACS Nano_CIPS_ECE_2019_final.pdf2019-09-18 11:14 3.2M 
[ ]ACS Nano_CIPS_ECE_SI_2019_asap.pdf2019-08-06 10:28 666K 
[ ]ACS Nano_Han Liu_2012.pdf2012-12-03 16:06 2.4M 
[ ]ACS Nano_Han Liu_Schottky_2013.pdf2013-12-31 12:10 1.9M 
[ ]ACS Nano_Han Liu_Schottky_2013_Final.pdf2014-05-01 12:20 1.9M 
[ ]ACS Nano_In2Se3 Asymmetric_Intel_2021_asap.pdf2021-03-14 16:22 1.1M 
[ ]ACS Nano_In2Se3 Asymmetric_Intel_2021_asap_SI.pdf2021-03-14 16:24 197K 
[ ]ACS Nano_Phosphorene_2014.pdf2014-04-08 12:38 3.3M 
[ ]ACS Nano_Phosphorene_Final_2014.pdf2014-05-01 12:03 3.3M 
[ ]ACS Nano_TaSe2_Adam Neal.pdf2014-09-24 09:52 1.7M 
[ ]ACS Omega GaO Steep Slope.pdf2017-10-26 11:38 1.7M 
[ ]ACS Omega GaO thermal 2017.pdf2017-11-09 16:26 4.8M 
[ ]ACS Omega_Asymmetric Contacts_Lingming Yang_2017.pdf2017-08-03 10:24 2.8M 
[ ]ACS_AMI_2022_CIPS_ORNL.pdf2022-01-19 10:12 4.1M 
[ ]ACS_AMI_2022_CIPS_ORNL_SI.pdf2022-01-19 10:14 712K 
[ ]ACS_Interface_UTD_ALD_BP_2015.pdf2015-06-10 11:14 3.3M 
[ ]ACS_Nano_Adam_nn402377g.pdf2014-01-09 11:11 1.7M 
[ ]ACS_Omega_Cu2O_Bae_2019.pdf2019-12-18 12:34 2.7M 
[ ]AEM_2024.pdf2024-06-04 16:43 2.7M 
[ ]AFM_BN_Xianfan Xu_2019.pdf2019-12-16 13:29 837K 
[ ]AFM_Qingkai Qi_2018.pdf2018-10-20 17:07 2.2M 
[ ]APL Fluorine Passivation In2O3 TFT_2022.pdf2023-04-28 09:46 4.0M 
[ ]APL Ga2O3 beyond 1A.pdf2017-08-31 10:18 1.0M 
[ ]APL Ga2O3 thermal limit_2019.pdf2019-11-05 16:24 1.6M 
[ ]APL Materials_Contact_Du.pdf2014-10-28 17:24 1.2M 
[ ]APL Review_Contact_Du.pdf2014-08-29 11:01 1.2M 
[ ]APL_6nm_InGaAs_NW_Mengwei Si_2013.pdf2013-03-05 12:57 1.5M 
[ ]APL_2008_Graphene_FET.pdf2008-03-04 13:20 378K 
[ ]APL_2009_Graphene_QHE.pdf2009-10-28 15:35 154K 
[ ]APL_2021_FEDE_Simulation.pdf2021-09-28 11:39 2.6M 
[ ]APL_2024_Ga2O3_Diamond Cooling.pdf2024-04-29 14:07 2.2M 
[ ]APL_ALD_2D Crystal_100_15_152115_2012.pdf2012-04-13 11:18 1.1M 
[ ]APL_Editorial_NCFET_2019.pdf2019-03-08 15:49 1.4M 
[ ]APL_Fast Pulse_NIST_2019.pdf2019-08-16 14:27 2.3M 
[ ]APL_GaAs MOSFET on Si_2008.pdf2008-12-18 12:51 138K 
[ ]APL_GaAs_111A_MOSFET_2009.pdf2009-06-01 11:39 209K 
[ ]APL_GeOI_JJGu_2010.pdf2010-07-08 12:31 481K 
[ ]APL_Graphene Antidots_2008.pdf2008-09-22 15:28 246K 
[ ]APL_III-VON_2011.pdf2011-09-15 12:28 559K 
[ ]APL_ILG_GaN_Hong Zhou_2016.pdf2016-05-19 15:37 1.4M 
[ ]APL_ITO_2008.pdf2008-06-27 15:55 101K 
[ ]APL_In2O3_High On Off Ratio_2021.pdf2022-01-10 11:03 1.7M 
[ ]APL_In2O3_O2 plasma_Adam_2021.pdf2021-02-07 13:47 1.6M 
[ ]APL_Kun Xu_Spin Edge_2014.pdf2014-04-27 18:13 584K 
[ ]APL_NIST_Purdue_Intel_2008.pdf2008-08-27 16:33 323K 
[ ]APL_SAND_GaAs MOSFET_RF_Noise.pdf2007-08-27 14:52 294K 
[ ]APL_Sandia_first one_2018.pdf2018-08-27 12:23 967K 
[ ]APL_Sandia_second one_2018.pdf2019-01-02 14:55 1.0M 
[ ]APL_TI_ALD_2011.pdf2011-08-04 15:53 1.6M 
[ ]APL_Te Edge Imaging_NIST_2020.pdf2021-01-17 16:40 2.4M 
[ ]APL_Vertically stacked multilayer In2O3_Zhuocheng_2022.pdf2022-07-07 14:43 4.3M 
[ ]APL_WaveFET_Jingyun_2015.pdf2015-02-20 11:44 1.1M 
[ ]APL_alpha_In2Se3_Sumeet_2020.pdf2021-01-17 16:39 2.8M 
[ ]ATNeal_PDYe_DRC_2012.pdf2012-03-19 16:14 270K 
[ ]AVS_Review_2008.pdf2008-07-08 13:42 242K 
[ ]ActaMaterialia_2009.pdf2009-06-01 11:38 1.6M 
[ ]Advanced Functional Materials_hBN_2020.pdf2020-07-07 16:38 836K 
[ ]Advanced Materials 2015_Xuefei.pdf2015-02-10 12:42 1.2M 
[ ]Advanced Materials 2023 Charnas Review Extremely Thin Amorphous Indium Oxide Transistors.pdf2024-01-02 11:18 6.4M 
[ ]Advanced Materials_Sunkook_2008.pdf2008-11-13 14:01 456K 
[ ]ApplPhysLett101_082114_HYChou_Electron band alignment at the interface of 100InSb with ALD AL2O3.pdf2012-08-24 12:02 764K 
[ ]ApplPhysLett_67_1441_2D_Dy_Ye_MPI.pdf2007-07-26 09:50 801K 
[ ]ApplPhysLett_79_2193_PhotoResistanceOscillations_Ye.pdf2007-07-25 11:18 76K 
[ ]ApplPhysLett_83_180_GaAs Dmode_Ye.pdf2007-07-25 11:21 121K 
[ ]ApplPhysLett_84_434_Dmode_InGaAs_2004.pdf2007-07-25 10:56 117K 
[ ]ApplPhysLett_90_072105_maximum strength_Yanqing.pdf2007-02-15 10:17 84K 
[ ]ApplPhysLett_90_143504_GaN_PhotoCV_2007.pdf2007-04-03 10:48 163K 
[ ]ApplPhysLett_90_163108_ALD_CNTFET.pdf2007-04-17 16:54 375K 
[ ]ApplPhysLett_91_022108_InP_Emode_Wu_2007.pdf2007-07-11 14:52 266K 
[ ]ApplPhysLett_91_142122_Laminate.pdf2007-10-05 12:41 163K 
[ ]ApplPhysLett_91_232107_Channel Engineering.pdf2007-12-18 09:41 303K 
[ ]ApplPhysLett_91_GaAs MOSHEMT_Dennis.pdf2007-11-26 14:37 215K 
[ ]ApplPhysLett_92_013101_HOPG_2008.pdf2008-01-02 16:48 268K 
[ ]ApplPhysLett_93_061907_2008_HfAlO_UTD.pdf2008-08-14 09:40 401K 
[ ]ApplPhysLett_97_162910_LaLuO3_GaAs111A.pdf2010-10-23 11:12 827K 
[ ]ApplPhysLett_99_NH4S passivation_2011.pdf2011-10-14 10:20 720K 
[ ]ApplPhysLett_U Leuven_GaAs 111A_PLE.pdf2012-04-02 10:04 842K 
[ ]BMMD Moon 2008.pdf2008-09-24 16:29 893K 
[ ]BP_Chemical Society Review 2014.pdf2014-10-31 10:34 3.2M 
[ ]COSSMS_Review(2011).pdf2011-07-13 16:15 2.9M 
[ ]COSSMS_Review(2011)_Bob Wallace.pdf2011-07-13 16:15 2.9M 
[ ]CSApr08Ye.pdf2008-04-15 09:50 280K 
[ ]CSR_Tellurene_2018.pdf2018-08-27 13:06 5.2M 
[ ]CSR_Tellurene_2018_Final.pdf2018-10-12 16:09 5.2M 
[ ]Capacitance-voltage studies on enhancement-mode InGaAs.pdf2006-10-29 18:46 125K 
[ ]Carbon_Xianfan Xu_2013.pdf2013-01-16 13:16 1.1M 
[ ]Chaves_et_al-2020-npj_2D_Materials_and_Applications.pdf2020-09-08 15:41 5.9M 
[ ]Compound Semiconductor Research Review InP.pdf2007-10-05 13:14 313K 
[ ]Concurrent_Characterization_of_GaN_MOSHEMT_Gate_Leakage_via_Electrical_and_Thermoreflectance_Measurements.pdf2023-11-22 10:48 2.2M 
[ ]Crystal Growth and Design 2023.pdf2023-04-28 10:59 8.0M 
[ ]Current-transport properties of atomic-layer-deposited ultrathin.pdf2006-10-29 18:43 134K 
[ ]DRC_MultiStackGAA_Jiangjiang_Final.pdf2012-06-08 13:52 513K 
[ ]DRC abstract - Direct Observation of Dirac Point and Fermi level alignment of Graphene-final.pdf2012-06-26 18:08 286K 
[ ]ECE 695_Lecture 2_January_15_2015.ppt2015-01-14 10:11 5.4M 
[ ]ECSTrans2012_III-V3D_JJGu.pdf2012-04-27 10:56 1.0M 
[ ]ECS_2013_Paper_19504_manuscript_6579_0[1].pdf2013-11-22 09:48 297K 
[ ]ECS_Review_SFO_2009.pdf2009-05-19 13:32 468K 
[ ]ECS_Transaction_Review_Cancun_Mexico_2006.pdf2006-11-30 12:44 325K 
[ ]ECT000459_invited_high k graphene_2010.pdf2010-10-27 14:25 155K 
[ ]ECT_2010_35.pdf2010-04-20 15:00 496K 
[ ]ECT_2010_nano.pdf2010-04-20 14:59 504K 
[ ]EDL_1A_2008.pdf2008-03-24 12:08 195K 
[ ]EDL_2021_Ferroelectric_FET_Based_Coupled-Oscillatory_Network_for_Edge_Detection.pdf2021-11-18 14:14 2.9M 
[ ]EDL_2021_In2O3 High Performance.pdf2021-09-10 10:14 1.1M 
[ ]EDL_2021_In2O3 Reliability_ASAP.pdf2022-01-10 11:09 548K 
[ ]EDL_ALE_InAlN_GaN_MOSHEMT_Hong_2016_accepted.pdf2016-03-30 10:30 944K 
[ ]EDL_ALE_NMOSFET_LD_Final_2013.pdf2013-03-23 11:22 422K 
[ ]EDL_ALE_NMOSFET_LD_early access_2013.pdf2013-03-08 15:49 419K 
[ ]EDL_BAE_GaN_2013.pdf2013-06-03 12:42 321K 
[ ]EDL_BAE_GaN_MOSHEMT_2013_early.pdf2013-04-23 12:58 317K 
[ ]EDL_BAE_InAlN_GaN_2015.pdf2015-05-05 12:45 597K 
[ ]EDL_BP_ALD Capping_asap.pdf2014-05-29 10:44 623K 
[ ]EDL_BP_RF_ASAP_2014.pdf2014-10-28 17:30 566K 
[ ]EDL_Ga2O3_Dit_Bae_2018.pdf2018-11-13 13:26 1.4M 
[ ]EDL_Ga2O3_FET_2016.pdf2017-01-05 15:37 744K 
[ ]EDL_Ga2O3_Interface_2016.pdf2016-11-15 17:50 728K 
[ ]EDL_GaAsMOSFET_Agere_Ye_2003.pdf2007-07-26 09:47 312K 
[ ]EDL_GaN MOSHEMT MgCaO_2016.pdf2016-05-11 16:22 1.1M 
[ ]EDL_GaN MOSHEMT MgCaO_RF Tgate_2017.pdf2017-10-18 13:41 875K 
[ ]EDL_GaSb PMOSFET_2011_preversion.pdf2011-05-31 12:30 337K 
[ ]EDL_GaSb PMOSFET_2011_printed version.pdf2011-08-04 12:54 341K 
[ ]EDL_In2O3_Scaling_2020_ASAP.pdf2021-01-17 16:20 437K 
[ ]EDL_InGaAs Inversion_2007.pdf2007-10-30 11:33 176K 
[ ]EDL_InGaAs NW Variability_2013_Final.pdf2013-04-23 13:07 1.1M 
[ ]EDL_InGaAs_Reliability_2011.pdf2011-04-07 15:47 325K 
[ ]EDL_MoS2 MOSFET_2012.pdf2012-03-23 15:58 225K 
[ ]EDL_MoS2_Graphene Contact_2014.pdf2014-04-08 12:33 536K 
[ ]EDL_MoS2_Graphene Contacts_Final_2014.pdf2014-05-01 12:15 540K 
[ ]EDL_MoS2_PEI_Final.pdf2013-10-24 16:38 745K 
[ ]EDL_MoS2_PEI_asap.pdf2013-08-28 12:43 284K 
[ ]EDL_Short Channel Effect_2009_YQ Wu.pdf2009-06-26 10:42 178K 
[ ]EDL_Temporal and Thermal Stability of Al2O3-Passivated Phosphorene MOSFETs_Final.pdf2014-11-24 10:51 561K 
[ ]EDL_UIUC_Model_2013.pdf2013-06-03 12:43 319K 
[ ]EDL_Variability_GG_early access_2013.pdf2013-03-08 15:47 1.1M 
[ ]EDL_Yale_Ga2O3_2018.pdf2018-07-06 11:27 695K 
[ ]EDL_Yuchen_BP_P doping_2016.pdf2016-03-30 09:53 633K 
[ ]ESL000H27_Chen Wang_InP 111A ZERO DRIFT_2012.pdf2012-01-20 10:14 825K 
[ ]ESL000H51_Chen Wang_GaSb_2012.pdf2012-02-08 12:42 1.5M 
[ ]Evidence of a First-Order Phase Transition BetweenWigner-Crystal.pdf2006-10-29 23:43 1.2M 
[ ]FE RF MEMs_2020.pdf2020-01-28 15:38 1.3M 
[ ]Formation and characterization of nanometer scale.pdf2006-10-29 18:50 127K 
[ ]Frontier in Materials_Interface_Mengwei Si_2022.pdf2022-07-07 14:47 1.9M 
[ ]GaN MOSHEMT International Journal of High Speed Electronics and Systems.pdf2006-11-30 16:06 359K 
[ ]GaN metal-oxide-semiconductor high-electron-mobility-transistor.pdf2006-10-29 18:54 234K 
[ ]Gang Qiu-Laser BP-2018-Advanced_Materials.pdf2018-02-23 17:22 2.6M 
[ ]Graphene_Book_Chapter_Ye_Purdue_2012.pdf2012-03-20 17:39 1.3M 
[ ]High-performance GaAs metal-insulator-semiconductor field-effect.pdf2006-10-29 18:39 409K 
[ ]IEDM-Dongqi-IZO.PDF2022-12-19 21:20 567K 
[ ]IEDM-Mengwei-M3D.PDF2022-12-19 21:20 913K 
[ ]IEDM-PYL-thermal.PDF2022-12-19 21:20 696K 
[ ]IEDM-Zhuocheng-Reliability.PDF2022-12-19 21:20 599K 
[ ]IEDM 2012_JJ Gu_4D_S23P07.pdf2013-01-08 13:32 2.1M 
[ ]IEDM 2012_JJ Gu_63mvdec_S27P06.pdf2013-01-08 13:33 1.3M 
[ ]IEDM2013_S07P05.pdf2013-12-13 15:39 673K 
[ ]IEDM2014_S05P02_BP_optics.pdf2014-12-15 00:38 1.9M 
[ ]IEDM2014_S09P03_Ge_CMOS.pdf2014-12-15 00:37 1.8M 
[ ]IEDM2014_S16P07_Ge_device.pdf2014-12-15 00:38 1.8M 
[ ]IEDM2014_S20P01_IIIV_RTN.pdf2014-12-15 00:39 2.6M 
[ ]IEDM2014_S20P03_IIIV_thermal.pdf2014-12-15 00:40 3.3M 
[ ]IEDM 2015_35 NW_Jingyun_S15P02.pdf2015-12-18 07:53 1.9M 
[ ]IEDM 2015_Ge NW CMOS_Heng_S02P01.pdf2015-12-18 07:54 1.1M 
[ ]IEDM 2018_Chung.PDF2018-12-12 16:49 891K 
[ ]IEDM 2021 Gupta 15-2.PDF2021-12-13 01:20 1.1M 
[ ]IEDM 2021 Zehao Lin 17-4.PDF2021-12-13 01:23 575K 
[ ]IEDM 2023_37-2_Wed_Purdue_contact.pdf2023-12-17 06:21 1.1M 
[ ]IEDM 2023_37-5_Wed_Purdue_thermal-RC.pdf2023-12-17 06:21 1.3M 
[ ]IEDM 2023_41-1_Wed_Purdue_IGO.pdf2023-12-17 06:21 1.8M 
[ ]IEDM_2007_S23P08.pdf2007-12-18 09:43 352K 
[ ]IEDM_2008_InGaAs MOSFET.pdf2008-12-19 13:26 370K 
[ ]IEDM_2008_Interface.pdf2008-12-19 13:29 535K 
[ ]IEDM_2016_Shin_404.pdf2016-12-15 14:51 710K 
[ ]IEDM_2016_Yang_127.pdf2016-12-15 14:56 767K 
[ ]IEDM_2017_2D NCFET_Mengwei_2305.pdf2017-12-12 11:01 1.0M 
[ ]IEDM_2017_Ge NCFET_Chung_1503.pdf2017-12-12 10:59 1.1M 
[ ]IEDM_2019_FTJ_06-6-259.pdf2019-12-16 15:01 1.0M 
[ ]IEDM_2019_Sub1ns_15-2-450.pdf2019-12-16 15:00 484K 
[ ]IEDM_Gupta_2020.PDF2020-11-20 17:51 6.3M 
[ ]IEDM_S27P01_Fudan_Purdue.pdf2011-12-08 16:24 425K 
[ ]IEDM_S33P02_GAA_Purdue.pdf2011-12-08 16:26 913K 
[ ]IEEE EDL 2017 Ge nFET ballistic transport.pdf2017-04-11 15:39 705K 
[ ]IEEE EDL 2017 InGaAs Double Gate.pdf2017-04-11 15:48 762K 
[ ]IEEE EDL 2018 Ge Mobility Wangran Wu.pdf2018-02-23 17:53 1.1M 
[ ]IEEE EDL 2022_GAA_In2O3.pdf2023-04-28 09:37 1.1M 
[ ]IEEE EDL 2023_IGO.pdf2023-04-26 17:01 2.7M 
[ ]IEEE EDL GaN FinFET 2017.pdf2017-09-25 12:05 1.0M 
[ ]IEEE EDL_Volumn Inversion_JJGu_2012.pdf2012-06-26 15:51 420K 
[ ]IEEE JEDS Ga2O3 on Diamond 2019.pdf2019-09-18 11:20 2.6M 
[ ]IEEESpectrum2016Germanium.pdf2016-12-16 11:14 4.4M 
[ ]IEEE Spectrum GaAs MOSFET 2008.pdf2008-08-06 18:12 286K 
[ ]IEEE Spectrum Nanosheet 2019.pdf2019-09-03 16:50 2.1M 
[ ]IEEE TNS 2017 GaAs.pdf2017-04-11 15:27 882K 
[ ]IEEE TNS 2017 GeOI.pdf2017-04-11 15:26 882K 
[ ]IEEE Trans Advanced Packaging_2009.pdf2009-03-12 15:24 1.7M 
[ ]IEEE Trans Nano MF Li.pdf2013-09-25 12:57 397K 
[ ]III-V MOSFET Science 2009.pdf2009-03-11 12:14 457K 
[ ]IRPS4A01_2015.pdf2015-05-05 15:39 880K 
[ ]IRPS2010_wrachien.pdf2010-05-10 11:21 441K 
[ ]IRPS2014_Shin_4A03.pdf2014-06-03 13:48 350K 
[ ]IRPS_35_Ge_2017_6A-05.pdf2017-04-11 13:17 341K 
[ ]IRPS_2018_Noise on MoS2 NCFET_P-TX01.pdf2018-03-13 10:41 743K 
[ ]IRPS_GaN_2017_5C-03.pdf2017-04-11 13:15 16M 
[ ]IRPS_InGaAs Planar_2012_Late News.pdf2012-04-27 10:29 516K 
[ ]Improvement of GaAs metal¿Csemiconductor field-effect.pdf2006-10-29 18:52 374K 
[ ]InGaAs-Al2O3-NIST-Purdue-2010.pdf2010-02-02 19:12 206K 
[ ]InGaAs-Charge-Pumping-Lehigh-Purdue-2010.pdf2010-02-17 10:27 165K 
[ ]J._Phys._D3A_Appl._Phys._51_135306_Chang_NTU.pdf2018-03-09 12:47 3.0M 
[ ]JAP 2023_Wendy_Editorial.pdf2023-04-28 10:51 1.0M 
[ ]JAP Invited 2022_Dongqi_Final Print.pdf2022-08-03 22:07 3.1M 
[ ]JAP_2018_Thermoreflectance imaging of electromigration evolution in asymmetric aluminum.pdf2018-01-19 18:11 3.8M 
[ ]JAP_2023_Gupta.pdf2023-10-30 11:21 3.7M 
[ ]JAP_Graphene Transport_2012.pdf2012-01-13 10:01 1.6M 
[ ]JAP_InAs_Interface_2016.pdf2016-12-15 15:01 1.1M 
[ ]JAP_InP_Band Alignment_NIST_2013.pdf2013-01-09 12:55 1.4M 
[ ]JAP_JJGu_InGaAs_2011.pdf2011-03-09 14:30 2.3M 
[ ]JApplPhys_81_5444_Dy_MPI_Ye.pdf2007-07-26 09:55 379K 
[ ]JApplPhys_100_074501_GaN_SITP_Simulation.pdf2006-11-30 12:44 587K 
[ ]JApplPhys_102_034502_GaN_Simulation.pdf2007-10-07 17:40 165K 
[ ]JApplPhys_113_013711_Min_InP_111A.pdf2013-01-08 13:03 1.8M 
[ ]JEDS_2018_Jiang_NCFET Model.pdf2018-02-23 18:08 1.0M 
[ ]JEM_Mike Bolen_2010.pdf2010-09-24 12:13 610K 
[ ]JPCC-2010-114-10505-Kun.pdf2010-06-24 16:50 2.3M 
[ ]JPCC_Kun Xu_Graphene Edge_2014.pdf2014-06-03 15:21 3.4M 
[ ]JPCC_laser annealing_In2O3 NW.pdf2012-04-06 14:01 3.5M 
[ ]JPCM_2D Review_Yuchen_2016.pdf2016-05-17 10:24 2.6M 
[ ]JVTBD9294041206_1.pdf2011-08-03 04:09 338K 
[ ]Leakage current and breakdown electric-field studies.pdf2006-10-29 18:56 138K 
[ ]MRS Bulletin_2021_Publication Version.pdf2021-11-23 11:31 2.4M 
[ ]MSB11021_GaN MOSFET_Printed PDF.pdf2006-11-30 12:44 377K 
[ ]Micro Raman Zhe Luo 2014.pdf2014-04-27 18:28 365K 
[ ]Microelectronic Engineering UTD BP XPS 2015.pdf2016-02-08 10:54 842K 
[ ]Microelectronics Reliability_SUNY.pdf2007-07-25 10:51 404K 
[ ]Minority-carrier characteristics of InGaAs metal-oxide-semiconductor.pdf2006-10-29 18:41 152K 
[ ]MoS2 Nanoribbon_EDL_2012.pdf2012-12-03 15:49 353K 
[ ]Modulation of the high mobility two-dimensional electrons in SiSiGe using.pdf2006-10-29 18:49 135K 
[ ]NC_APL_revision_20190208_final_final_final_supplement.pdf2019-03-08 15:57 418K 
[ ]NComm_2024.pdf2024-06-04 17:00 2.3M 
[ ]NE In2Se3 FeSFET Final Printed Version_2019.pdf2019-12-16 13:08 1.5M 
[ ]NE In2Se3 FeSFET supplement information_2019.pdf2019-09-12 16:49 1.1M 
[ ]NL_1D_Te_ASAP_2017.pdf2017-06-13 12:45 5.1M 
[ ]NL_1D_Te_Final_2017.pdf2017-07-03 12:08 5.1M 
[ ]NL_2D_Te_QHE_Final_2018.pdf2018-10-12 16:11 3.1M 
[ ]NL_2021_Se mechanics_SI.pdf2021-09-24 15:15 610K 
[ ]NL_2021_Se mechanics_asps.pdf2021-09-24 15:10 5.5M 
[ ]NL_2023_dou-et-al-2023-self-assembled-au-nanoelectrodes-enabling-low-threshold-voltage-hfo2-based-artificial-neurons.pdf2023-10-30 10:53 3.6M 
[ ]NL_2023_niu-et-al-2023-tunable-chirality-dependent-nonlinear-electrical-responses-in-2d-tellurium.pdf2023-10-30 11:00 5.3M 
[ ]NL_2024_Thermal Transistor.pdf2024-04-24 11:56 2.6M 
[ ]NL_ALE_MgCaO_GaN.pdf2016-12-15 14:33 2.3M 
[ ]NL_CVD MoS2_2013_ASAP.pdf2013-06-03 12:58 1.7M 
[ ]NL_Doping_WS2_MoS2_2014_ASAP.pdf2014-10-28 17:12 1.3M 
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