|| Purdue University
School of Electrical and Computer Engineering
465 Northwestern Ave.
West Lafayette, Indiana 47907-2035
1205 West State Street
West Lafayette, Indiana 47907-2057
||BRK 1291 (Birck)
EE 252 (ECE)
|| Phone: 765.494.7611
|| * BS, Fudan University,
Shanghai, China, 1988
* Ph.D., Max-Planck-Institute for Solid State
Research, Stuttgart, Germany, 1996
Semiconductor physics and devices,
Nano-structures and nano-fabrications,
Quantum/spin-transport, Atomic layer deposition,
High-k/III-V device integration,
High-performance III-V MOSFETs, High-k/graphene
integration, High-performance graphene FETs,
Graphene spintronics, All oxide electronics, and
Recent News in our ALD Group:
"IEEE Spectrum" magazine, the most
prestigious one in electrical engineering society, publishes a long
feature article about our break-through work on ALD high-k/InGaAs MOSFET. This
article also reviews the history and current status of GaAs MOSFET research.
Science quotes our breakthrough work on
InGaAs MOSFET in its editorial article published on Feb. 20, 2009.
Three papers on InGaAs MOSFETs
(PDF), FinFETs (PDF) and GaAs
interface studies (PDF) are
accepted by IEDM 2009. Yanqing Wu's the first III-V FinFET work is selected as
one of eight highlights for the coming IEDM.
first III-V FinFET gets wide interests from the device community:
III-V MOSFET book, co-edited by Peide Ye, is published in April 2010 by
work on ALD LaAlO3/SrTiO3 all oxide FETs is accepted by
IEDM 2010. PDF
papers are accepted this year for the coming meeting in December 2011. The first one is
Jiangjiang Gu's the first experimental demonstration of gate-all-around (GAA)
III-V MOSFET by top-down approach. The second one is the joint paper with Fudan
University on InGaAs MOSFET reliability study.
receives 2011 IBM Faculty Award.
Gu's breakthrough work on world-first top-down gate-all-around (GAA) III-V
nanowire FET got a lot of attentions from CMOS and nanoelectronics community
after IEDM report.
Gu receives 2012 Bilsland Dissertation Fellowship.
Peide Ye has
been selected by a panel of distinguished professors at Purdue to be a
University Faculty Scholar.
were presented at 2012 Device Research Conference (DRC) including 2 Late News
Papers. They are Jiangjiang Gu's "III-V 4D Transistors"
PDF, Kun Xu's "IPE
study of graphene band alignment" in collaborations with NIST and UCLA
PDF, and Adam Neal and Han Liu's "Metal Contacts to MoS2"
PDF This is the first time for our
group having Late News Papers in a competitive conference.
graphene FET paper is among the most downloaded Appl. Phys. Letters paper in the
past 5 years.
two papers on III-V GAA nanowire FETs are accepted by IEDM. They are "20-80nm
Channel Length InGaAs Gate-all-around Nanowire MOSFETs with EOT=1.2nm and Lowest
SS=63mV/dec" and "III-V Gate-all-around Nanowire MOSFET Process Technology: From
3D to 4D". The work is in close collaborations with Prof. Roy Gordon's group at
Peide Ye has
been named IEEE Fellow in December 2012. He was honored for his contributions to
compound semiconductor MOSFET materials and devices. IEEE Fellow is the highest
grade of membership and is recognized by the technical community as a
prestigious honor and an important career achievement.
Gu wins 2012 SISC Ed Nicollian Best Student Paper Award
receives 2013 Bilsland Dissertation Fellowship.
work on atomic layer epitaxial oxide on GaAs (111)A surface was reported by
MOS-HEMT was reported by Semiconductor Today
were presented at 2013 Device Research Conference (DRC) including 1 Late News
Paper. They are Mengwei's "Raised source/drain III-V 3D Transistors"
with Harvard, Han Liu's "CVD MoS2 FETs" with Rice, and Heng
Wu's "Room-temperature Quantum Oscillations on Sub-10nm Ge MOSFETs" as the Late
Heng Wu wins
2013 SISC Ed Nicollian Best Student Paper Award
Han Liu and Adam Neal's work on phosphorene starts to
attract attention in nano-materials and nano-electronics communities:
Nature reports: Phosphorene excites materials scientists
Han Liu receives the CoE Outstanding Grad Student
Research Award for his outstanding work on MoS2 and Phosphorene.
Three papers are accepted by VLSI 2014 including one
Late News Paper. They are Heng
Wu's "Ge CMOS: Breakthroughs of nFETs (Imax=714 mA/mm, gmax=590 mS/mm) by
recessed channel and S/D" and Lin Dong's "III-V CMOS Devices and Circuits with
High-Quality Atomic-Layer-Epitaxial La2O3/GaAs Interface". The Late News
Paper is Lingming Yang's "High-Performance MoS2 Field-Effect Transistors Enabled
by Chloride Doping: Record Low Contact Resistance (0.5kΩum)
and Record High Drain Current (460 uA/um)" in collaborations with SEMATECH and
Three papers with two orals and one
poster are accepted for DRC 2014. They are Han Liu's phosphorene ambipolar FET,
Heng Wu's InAs NW MOSFETs and Yuchen Du's graphene/MoS2 contacts.