|| Purdue University
School of Electrical and Computer Engineering
465 Northwestern Ave.
West Lafayette, Indiana 47907-2035
1205 West State Street
West Lafayette, Indiana 47907-2057
||BRK 1291 (Birck)
EE 252 (ECE)
|| Phone: 765.494.7611
|| * BS, Fudan University,
Shanghai, China, 1988
* Ph.D., Max-Planck-Institute for Solid State
Research, Stuttgart, Germany, 1996
Semiconductor physics and devices,
Nano-structures and nano-fabrications,
Quantum/spin-transport, Atomic layer deposition,
High-k/III-V and Ge device integration,
High-performance III-V and Ge MOSFETs, High-k/2D
integration, High-performance 2D devices,
2D spintronics, All oxide electronics, and
wide bandgap semiconductor GaN and Ga2O3 power electronics.
Recent News in our ALD Group:
"IEEE Spectrum" magazine, the most
prestigious one in electrical engineering society, publishes a long
feature article about our break-through work on ALD high-k/InGaAs MOSFET. This
article also reviews the history and current status of GaAs MOSFET research.
Science quotes our breakthrough work on
InGaAs MOSFET in its editorial article published on Feb. 20, 2009.
Three papers on InGaAs MOSFETs
(PDF), FinFETs (PDF) and GaAs
interface studies (PDF) are
accepted by IEDM 2009. Yanqing Wu's the first III-V FinFET work is selected as
one of eight highlights for the coming IEDM.
first III-V FinFET gets wide interests from the device community:
receives 2011 IBM Faculty Award.
Gu's breakthrough work on world-first top-down gate-all-around (GAA) III-V
nanowire FET got a lot of attentions from CMOS and nanoelectronics community
after IEDM report.
Peide Ye has
been selected by a panel of distinguished professors at Purdue to be a
University Faculty Scholar.
two papers on III-V GAA nanowire FETs are accepted by IEDM. They are "20-80nm
Channel Length InGaAs Gate-all-around Nanowire MOSFETs with EOT=1.2nm and Lowest
SS=63mV/dec" and "III-V Gate-all-around Nanowire MOSFET Process Technology: From
3D to 4D". The work is in close collaborations with Prof. Roy Gordon's group at
Peide Ye has
been named IEEE Fellow in December 2012. He was honored for his contributions to
compound semiconductor MOSFET materials and devices. IEEE Fellow is the highest
grade of membership and is recognized by the technical community as a
prestigious honor and an important career achievement.
Gu wins 2012 SISC Ed Nicollian Best Student Paper Award
Heng Wu wins
2013 SISC Ed Nicollian Best Student Paper Award
Han Liu and Adam Neal's work on phosphorene starts to
attract attention in nano-materials and nano-electronics communities:
Nature reports: Phosphorene excites materials scientists
Science reports: Beyond Graphene Science 2015 Beyond Graphene
2015 Nature reports: 2D or not 2D 2015 Nature 2D Report
Phosphorene work is highlighted as one of 'Cutting edge chemistry in 2014" by Chemistry World/Royal Society of Chemistryhttp://www.rsc.org/chemistryworld/2014/12/cutting-edge-chemistry-2014-year-roundup
Three papers are accepted by VLSI 2014 including one
Late News Paper. They are Heng
Wu's "Ge CMOS: Breakthroughs of nFETs (Imax=714 mA/mm, gmax=590 mS/mm) by
recessed channel and S/D" and Lin Dong's "III-V CMOS Devices and Circuits with
High-Quality Atomic-Layer-Epitaxial La2O3/GaAs Interface". The Late News
Paper is Lingming Yang's "High-Performance MoS2 Field-Effect Transistors Enabled
by Chloride Doping: Record Low Contact Resistance (0.5kΩum)
and Record High Drain Current (460 uA/um)" in collaborations with SEMATECH and
Total five papers are accepted by IEDM
2014 including one co-authored with Shin and Prof. Alam. They are:
"First Experimental Demonstration of Ge
CMOS Circuits" by Heng Wu et al.
"Deep Sub-100nm Ge CMOS Devices on Si
with the Recessed S/D and Channel" by Heng Wu et al.
"Low Frequency Noise and RTN on
Near-Ballistic III-V GAA Nanowire MOSFETs" by N. Conrad, M. Si, et al.
"Direct Observation of Self-heating in
III-V Gate-all-around Nanowire MOSFETs" by Shin, et al.
"Towards High Performance 2D Black
Phosphorus Optoelectronic Devices: the role of metal contact" by Yexin Deng et al.
Heng Wu's work on Ge CMOS starts to
attract attention in electronics device community:http://www.purdue.edu/newsroom/releases/2014/Q4/germanium-comes-home-to-purdue-for-semiconductor-milestone.htmlhttp://www.technologyreview.com/news/533586/new-chip-points-the-way-beyond-silicon/
Heng Wu won the Best Student Paper Award for the 2014 Symposium on VLSI Technology, one of the two most competitive conferences in electronic device field.
Two IEDM papers are accepted by IEDM 2015. One is Heng's Ge nanowire CMOS and another is Jingyun and Mengwei's InGaAs nanowire with anisotropic etching.
Heng Wu won the Best Student Paper Award for the 2015 Device Research Conference, one of the competitive conferences in electronic device field.
IEEE Spectrum reports Heng Wu's Ge Nanowire CMOS work. PDFhttp://spectrum.ieee.org/semiconductors/devices/nanowire-transistors-could-let-you-talk-text-and-tweet-longer
In June 2016, Purdue trustee ratified Chair Professorship to Peide Ye as Richard J. and Mary Jo Schwartz Professor of Electrical and Computer Engineering. PDF
Two IEDM papers are accepted by IEDM 2016. One is Lingming's black phosphorus device paper in collaborations with TSMC and AFRL. Another paper is from Shin and Prof. Alam, co-authoring with us, on self-heating effect on floating body transistors. Congratulations!
Peide Ye has
been elected Fellow of the American Physics Society (APS). The citation is "For contributions to scientific understanding and technical development of transistor technology on novel channel materials."
IEEE Spectrum published a new Feature Article on Germanium Transistor Technology written by Peide D. Ye. PDF
Hong Zhou made a breakthrough work on b-Ga2O3 membrane transistors with record drain currents for both E-mode and D-mode devices.
Peide Ye is the recipient of the 2017 CoE Faculty Award of Excellence in Research.
Peide Ye is the 2017 recipient of the Sigma Xi Research Award.
Peide Ye has been chosen as the 2018 Arden L. Bement Jr. Award recipient. As the top Purdue University research honors, the Bement Award is given for significant accomplishments in pure and applied science and engineering. Ye is being honored for his field-defining work in synthesizing and applying novel electronic materials to achieve record device performance.
Congratulations to Mengwei! His "Steep Slope Hysteresis-free Negative Capacitance MoS2 Transistors" work was published in "Nature Nanotechnology".
Congratulations to Gang Qiu! As the equal contributed first author, his "Field-effect transistors made from solution-grown two-dimensional tellurene" work was published in "Nature Electronics".
Congratulations to Wonil, Gang, Sami, Pai-Ying, Jinhyun and others ! We will present 6 papers at Device Research Conference this year including 1 invited talk, 2 oral talks and 3 poster presentations.
Congratulations to Wonil and Mengwei ! "First Direct Experimental Studies of Hf0.5Zr0.5O2 Ferroelectric Polarization Switching Down to 100-picosecond in Sub-60mV/dec Germanium Ferroelectric Nanowire FETs" work, in collaboration with NIST, was accepted by 2018 VLSI as a Late News paper.
Congratulations to Wonil! "First Demonstration of Ge Ferroelectric Nanowire FET as Synaptic Device for Online Learning in Neural Network with High Number of Conductance State and Gmax/Gmin" work, was accepted by 2018 IEDM.
IEEE Spectrum reports this new work for AI applications.
Congratulations to Gang and Wonil for receiving 2019 Bilsland Fellowships !
Congratulations to Lyu Xiao and Mengwei! HfZrO2 scaling paper was accepted by VLSI 2019.
The editorial review of negative capacitance field-effect transistor was publihsed by Applied Physics Letters. PDF
Peide Ye and his colleagues at CEA-LETI and IBM Research published a review article in IEEE Spectrum August 2019 issue on "The Last Silicon Transistor" PDF
IEEE Spectrum Press:https://spectrum.ieee.org/semiconductors/devices/the-nanosheet-transistor-is-the-next-and-maybe-last-step-in-moores-law
Congratulations to Mengwei, Xiao and others! The papers on HZO sub-1ns polarization switch and In2Se3 ferroelectric semiconductor tunneling junction were accepted by 2019 IEDM.