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Ye, Peide "Peter"

Richard J. and Mary Jo Schwartz Professor of Electrical and Computer Engineering


-Atomic Layer Depostion (ALD)

ALD based nano-materials
ALD based nano-devices
ALD based nano-physics
ALD based nano-structures

  ECE 201 Linear Circuit Analysis
  ECE 255 Microelectronic Circuit Design

  ECE 659V High-Speed Semiconductor Device
  ECE 658   Semiconductor Material and Device     Characterization
  EPICS (Engineering Project In Community Service)


News in ALD group


Group Picture Spring 2011

(We are missing Kun and Lin)


Group Picture Winter 2012

(We are missing Kun and Sami)

Group Picture Fall 2015





Postal Address: Purdue University
School of Electrical and Computer Engineering
465 Northwestern Ave.
West Lafayette, Indiana 47907-2035

Birck Nanotechnology Center
1205 West State Street
West Lafayette, Indiana 47907-2057

Office: BRK 1291 (Birck)  Primary
EE 252 (ECE)

Phone: Phone: 765.494.7611
Fax:     765.496.7443

E-Mail: yep@purdue.edu

Education: * BS, Fudan University, Shanghai, China, 1988
* Ph.D., Max-Planck-Institute for Solid State Research, Stuttgart, Germany, 1996

Background & Interests:

Semiconductor physics and devices, Nano-structures and nano-fabrications, Quantum/spin-transport, Atomic layer deposition, High-k/III-V and Ge device integration, High-performance III-V and Ge MOSFETs, High-k/2D integration, High-performance 2D devices, 2D spintronics, All oxide electronics, and wide bandgap semiconductor GaN and Ga2O3 power electronics.

Recent News in our ALD Group:

"IEEE Spectrum" magazine, the most prestigious one in electrical engineering society, publishes a long feature article about our break-through work on ALD high-k/InGaAs MOSFET. This article also reviews the history and current status of GaAs MOSFET research. PDF

Science quotes our breakthrough work on InGaAs MOSFET in its editorial article published on Feb. 20, 2009. PDF

Three papers on InGaAs MOSFETs (PDF), FinFETs (PDF) and GaAs interface studies (PDF) are accepted by IEDM 2009. Yanqing Wu's the first III-V FinFET work is selected as one of eight highlights for the coming IEDM.

The world first III-V FinFET gets wide interests from the device community:

Purdue News Press: http://www.purdue.edu/newsroom/research/2009/nov/091110YeFinfets.html

IEEE IEDM Press: http://btbmarketing.com/iedm/

IEEE Spectrum Press: http://spectrum.ieee.org/semiconductors/devices/first-galliumbased-finfets/0

National Science Foundation Highlights: http://www.nsf.gov/news/news_summ.jsp?cntn_id=115967


Peide Ye receives 2011 IBM Faculty Award.


Jiangjiang Gu's breakthrough work on world-first top-down gate-all-around (GAA) III-V nanowire FET got a lot of attentions from CMOS and nanoelectronics community after IEDM report.

Purdue News Press: http://www.purdue.edu/newsroom/research/2011/111206YeTransistors.html

IEEE Spectrum Press: http://spectrum.ieee.org/nanoclast/semiconductors/nanotechnology/ieee-meeting-plays-host-to-the-nanomaterials-that-aim-to-displace-silicon

Compound Semiconductor Press: http://www.compoundsemiconductor.net/csc/features-details.php?cat=news&id=19734345

Wikipedia: http://en.wikipedia.org/wiki/Multigate_device#cite_note-18


Peide Ye has been selected by a panel of distinguished professors at Purdue to be a University Faculty Scholar.


Jiangjiang's two papers on III-V GAA nanowire FETs are accepted by IEDM. They are "20-80nm Channel Length InGaAs Gate-all-around Nanowire MOSFETs with EOT=1.2nm and Lowest SS=63mV/dec" and "III-V Gate-all-around Nanowire MOSFET Process Technology: From 3D to 4D". The work is in close collaborations with Prof. Roy Gordon's group at Harvard University. 

Purdue New Press: http://www.purdue.edu/newsroom/releases/2012/Q4/new-4-d-transistor-is-preview-of-future-computers.html

Semiconductor Today: http://www.semiconductor-today.com/news_items/2012/DEC/PURDUE_211212.html


Peide Ye has been named IEEE Fellow in December 2012. He was honored for his contributions to compound semiconductor MOSFET materials and devices. IEEE Fellow is the highest grade of membership and is recognized by the technical community as a prestigious honor and an important career achievement.


Jiangjiang Gu wins 2012 SISC Ed Nicollian Best Student Paper Award



Heng Wu wins 2013 SISC Ed Nicollian Best Student Paper Award



Han Liu and Adam Neal's work on phosphorene starts to attract attention in nano-materials and nano-electronics communities:






Nature reports: Phosphorene excites materials scientists Papers\Nature_Phosphorene_2014.pdf

Science reports: Beyond Graphene Science 2015 Beyond Graphene

2015 Nature reports: 2D or not 2D 2015 Nature 2D Report

Phosphorene work is highlighted as one of 'Cutting edge chemistry in 2014" by Chemistry World/Royal Society of Chemistryhttp://www.rsc.org/chemistryworld/2014/12/cutting-edge-chemistry-2014-year-roundup

Three papers are accepted by VLSI 2014 including one Late News Paper. They are Heng Wu's "Ge CMOS: Breakthroughs of nFETs (Imax=714 mA/mm, gmax=590 mS/mm) by recessed channel and S/D" and Lin Dong's "III-V CMOS Devices and Circuits with High-Quality Atomic-Layer-Epitaxial La2O3/GaAs Interface". The Late News Paper is Lingming Yang's "High-Performance MoS2 Field-Effect Transistors Enabled by Chloride Doping: Record Low Contact Resistance (0.5kΩum) and Record High Drain Current (460 uA/um)" in collaborations with SEMATECH and Intel Cooperation.





Total five papers are accepted by IEDM 2014 including one co-authored with Shin and Prof. Alam. They are:

"First Experimental Demonstration of Ge CMOS Circuits" by Heng Wu et al.

"Deep Sub-100nm Ge CMOS Devices on Si with the Recessed S/D and Channel" by Heng Wu et al.

"Low Frequency Noise and RTN on Near-Ballistic III-V GAA Nanowire MOSFETs" by N. Conrad, M. Si, et al.

"Direct Observation of Self-heating in III-V Gate-all-around Nanowire MOSFETs" by Shin, et al.

"Towards High Performance 2D Black Phosphorus Optoelectronic Devices: the role of metal contact" by Yexin Deng et al.

Heng Wu's work on Ge CMOS starts to attract attention in electronics device community:http://www.purdue.edu/newsroom/releases/2014/Q4/germanium-comes-home-to-purdue-for-semiconductor-milestone.htmlhttp://www.technologyreview.com/news/533586/new-chip-points-the-way-beyond-silicon/

Heng Wu won the Best Student Paper Award for the 2014 Symposium on VLSI Technology, one of the two most competitive conferences in electronic device field.

Two IEDM papers are accepted by IEDM 2015. One is Heng's Ge nanowire CMOS and another is Jingyun and Mengwei's InGaAs nanowire with anisotropic etching.

Heng Wu won the Best Student Paper Award for the 2015 Device Research Conference, one of the competitive conferences in electronic device field.

IEEE Spectrum reports Heng Wu's Ge Nanowire CMOS work. PDFhttp://spectrum.ieee.org/semiconductors/devices/nanowire-transistors-could-let-you-talk-text-and-tweet-longer

In June 2016, Purdue trustee ratified Chair Professorship to Peide Ye as Richard J. and Mary Jo Schwartz Professor of Electrical and Computer Engineering. PDF

Two IEDM papers are accepted by IEDM 2016. One is Lingming's black phosphorus device paper in collaborations with TSMC and AFRL. Another paper is from Shin and Prof. Alam, co-authoring with us, on self-heating effect on floating body transistors. Congratulations!

Peide Ye has been elected Fellow of the American Physics Society (APS). The citation is "For contributions to scientific understanding and technical development of transistor technology on novel channel materials."

IEEE Spectrum published a new Feature Article on Germanium Transistor Technology written by Peide D. Ye. PDF



Hong Zhou made a breakthrough work on b-Ga2O3 membrane transistors with record drain currents for both E-mode and D-mode devices.


Peide Ye is the recipient of the 2017 CoE Faculty Award of Excellence in Research.