Index of /~yep/Papers

[ICO]NameLast modifiedSizeDescription
[PARENTDIR]Parent Directory   -  
[ ]2D Materials_2017_Iy..>2017-07-03 12:01 683K 
[ ]2D Materials_2019_UI..>2019-06-21 13:23 2.6M 
[ ]2D Materials_Te_Huan..>2019-11-11 15:17 2.5M 
[ ]2dm_3_2_024003.pdf 2016-03-28 16:58 1.8M 
[ ]13-02.pdf 2009-12-10 16:33 355K 
[ ]13-04.pdf 2009-12-10 16:33 515K 
[ ]35-05.pdf 2009-12-10 16:33 823K 
[ ]2015 Nanotechnology_..>2015-01-16 13:31 896K 
[ ]2020 JEDS_FE_Channel..>2020-08-22 15:45 704K 
[ ]ACS AEM_FEDE Stack_2..>2019-06-21 10:45 1.5M 
[ ]ACS AEM_FEDE Stack_2..>2019-06-21 10:46 355K 
[ ]ACS Nano 2D Se.pdf 2017-11-03 15:04 4.9M 
[ ]ACS Nano 2020 Yang C..>2020-09-08 15:34 4.0M 
[ ]ACS Nano BP Contacts..>2014-10-28 17:07 2.6M 
[ ]ACS Nano ITO 1nm 202..>2020-08-27 20:04 1.7M 
[ ]ACS Nano ITO 1nm 202..>2021-01-17 17:12 1.9M 
[ ]ACS Nano ITO 1nm_SI.pdf2020-08-27 20:08 1.0M 
[ ]ACS Nano_2021_Asymme..>2021-09-16 14:00 1.4M 
[ ]ACS Nano_2021_Asymme..>2021-09-16 14:13 197K 
[ ]ACS Nano_BP_MoS2_Pho..>2014-09-24 09:39 4.4M 
[ ]ACS Nano_BP_MoS2_Pho..>2014-08-14 13:54 4.4M 
[ ]ACS Nano_BP_Plasmoni..>2018-07-06 12:12 3.3M 
[ ]ACS Nano_CIPS_2018.pdf 2018-08-27 12:27 2.2M 
[ ]ACS Nano_CIPS_ECE_20..>2019-08-06 10:25 3.2M 
[ ]ACS Nano_CIPS_ECE_20..>2019-09-18 11:14 3.2M 
[ ]ACS Nano_CIPS_ECE_SI..>2019-08-06 10:28 666K 
[ ]ACS Nano_Han Liu_201..>2012-12-03 16:06 2.4M 
[ ]ACS Nano_Han Liu_Sch..>2013-12-31 12:10 1.9M 
[ ]ACS Nano_Han Liu_Sch..>2014-05-01 12:20 1.9M 
[ ]ACS Nano_In2Se3 Asym..>2021-03-14 16:22 1.1M 
[ ]ACS Nano_In2Se3 Asym..>2021-03-14 16:24 197K 
[ ]ACS Nano_Phosphorene..>2014-04-08 12:38 3.3M 
[ ]ACS Nano_Phosphorene..>2014-05-01 12:03 3.3M 
[ ]ACS Nano_TaSe2_Adam ..>2014-09-24 09:52 1.7M 
[ ]ACS Omega GaO Steep ..>2017-10-26 11:38 1.7M 
[ ]ACS Omega GaO therma..>2017-11-09 16:26 4.8M 
[ ]ACS Omega_Asymmetric..>2017-08-03 10:24 2.8M 
[ ]ACS_AMI_2022_CIPS_OR..>2022-01-19 10:12 4.1M 
[ ]ACS_AMI_2022_CIPS_OR..>2022-01-19 10:14 712K 
[ ]ACS_Interface_UTD_AL..>2015-06-10 11:14 3.3M 
[ ]ACS_Nano_Adam_nn4023..>2014-01-09 11:11 1.7M 
[ ]ACS_Omega_Cu2O_Bae_2..>2019-12-18 12:34 2.7M 
[ ]AFM_BN_Xianfan Xu_20..>2019-12-16 13:29 837K 
[ ]AFM_Qingkai Qi_2018.pdf2018-10-20 17:07 2.2M 
[ ]APL Fluorine Passiva..>2023-04-28 09:46 4.0M 
[ ]APL Ga2O3 beyond 1A.pdf2017-08-31 10:18 1.0M 
[ ]APL Ga2O3 thermal li..>2019-11-05 16:24 1.6M 
[ ]APL Materials_Contac..>2014-10-28 17:24 1.2M 
[ ]APL Review_Contact_D..>2014-08-29 11:01 1.2M 
[ ]APL_6nm_InGaAs_NW_Me..>2013-03-05 12:57 1.5M 
[ ]APL_2008_Graphene_FE..>2008-03-04 13:20 378K 
[ ]APL_2009_Graphene_QH..>2009-10-28 15:35 154K 
[ ]APL_2021_FEDE_Simula..>2021-09-28 11:39 2.6M 
[ ]APL_2024_Ga2O3_Diamo..>2024-04-29 14:07 2.2M 
[ ]APL_ALD_2D Crystal_1..>2012-04-13 11:18 1.1M 
[ ]APL_Editorial_NCFET_..>2019-03-08 15:49 1.4M 
[ ]APL_Fast Pulse_NIST_..>2019-08-16 14:27 2.3M 
[ ]APL_GaAs MOSFET on S..>2008-12-18 12:51 138K 
[ ]APL_GaAs_111A_MOSFET..>2009-06-01 11:39 209K 
[ ]APL_GeOI_JJGu_2010.pdf 2010-07-08 12:31 481K 
[ ]APL_Graphene Antidot..>2008-09-22 15:28 246K 
[ ]APL_III-VON_2011.pdf 2011-09-15 12:28 559K 
[ ]APL_ILG_GaN_Hong Zho..>2016-05-19 15:37 1.4M 
[ ]APL_ITO_2008.pdf 2008-06-27 15:55 101K 
[ ]APL_In2O3_High On Of..>2022-01-10 11:03 1.7M 
[ ]APL_In2O3_O2 plasma_..>2021-02-07 13:47 1.6M 
[ ]APL_Kun Xu_Spin Edge..>2014-04-27 18:13 584K 
[ ]APL_NIST_Purdue_Inte..>2008-08-27 16:33 323K 
[ ]APL_SAND_GaAs MOSFET..>2007-08-27 14:52 294K 
[ ]APL_Sandia_first one..>2018-08-27 12:23 967K 
[ ]APL_Sandia_second on..>2019-01-02 14:55 1.0M 
[ ]APL_TI_ALD_2011.pdf 2011-08-04 15:53 1.6M 
[ ]APL_Te Edge Imaging_..>2021-01-17 16:40 2.4M 
[ ]APL_Vertically stack..>2022-07-07 14:43 4.3M 
[ ]APL_WaveFET_Jingyun_..>2015-02-20 11:44 1.1M 
[ ]APL_alpha_In2Se3_Sum..>2021-01-17 16:39 2.8M 
[ ]ATNeal_PDYe_DRC_2012..>2012-03-19 16:14 270K 
[ ]AVS_Review_2008.pdf 2008-07-08 13:42 242K 
[ ]ActaMaterialia_2009.pdf2009-06-01 11:38 1.6M 
[ ]Advanced Functional ..>2020-07-07 16:38 836K 
[ ]Advanced Materials 2..>2015-02-10 12:42 1.2M 
[ ]Advanced Materials 2..>2024-01-02 11:18 6.4M 
[ ]Advanced Materials_S..>2008-11-13 14:01 456K 
[ ]ApplPhysLett101_0821..>2012-08-24 12:02 764K 
[ ]ApplPhysLett_67_1441..>2007-07-26 09:50 801K 
[ ]ApplPhysLett_79_2193..>2007-07-25 11:18 76K 
[ ]ApplPhysLett_83_180_..>2007-07-25 11:21 121K 
[ ]ApplPhysLett_84_434_..>2007-07-25 10:56 117K 
[ ]ApplPhysLett_90_0721..>2007-02-15 10:17 84K 
[ ]ApplPhysLett_90_1435..>2007-04-03 10:48 163K 
[ ]ApplPhysLett_90_1631..>2007-04-17 16:54 375K 
[ ]ApplPhysLett_91_0221..>2007-07-11 14:52 266K 
[ ]ApplPhysLett_91_1421..>2007-10-05 12:41 163K 
[ ]ApplPhysLett_91_2321..>2007-12-18 09:41 303K 
[ ]ApplPhysLett_91_GaAs..>2007-11-26 14:37 215K 
[ ]ApplPhysLett_92_0131..>2008-01-02 16:48 268K 
[ ]ApplPhysLett_93_0619..>2008-08-14 09:40 401K 
[ ]ApplPhysLett_97_1629..>2010-10-23 11:12 827K 
[ ]ApplPhysLett_99_NH4S..>2011-10-14 10:20 720K 
[ ]ApplPhysLett_U Leuve..>2012-04-02 10:04 842K 
[ ]BMMD Moon 2008.pdf 2008-09-24 16:29 893K 
[ ]BP_Chemical Society ..>2014-10-31 10:34 3.2M 
[ ]COSSMS_Review(2011).pdf2011-07-13 16:15 2.9M 
[ ]COSSMS_Review(2011)_..>2011-07-13 16:15 2.9M 
[ ]CSApr08Ye.pdf 2008-04-15 09:50 280K 
[ ]CSR_Tellurene_2018.pdf 2018-08-27 13:06 5.2M 
[ ]CSR_Tellurene_2018_F..>2018-10-12 16:09 5.2M 
[ ]Capacitance-voltage ..>2006-10-29 18:46 125K 
[ ]Carbon_Xianfan Xu_20..>2013-01-16 13:16 1.1M 
[ ]Chaves_et_al-2020-np..>2020-09-08 15:41 5.9M 
[ ]Compound Semiconduct..>2007-10-05 13:14 313K 
[ ]Concurrent_Character..>2023-11-22 10:48 2.2M 
[ ]Crystal Growth and D..>2023-04-28 10:59 8.0M 
[ ]Current-transport pr..>2006-10-29 18:43 134K 
[ ]DRC_MultiStackGAA_Ji..>2012-06-08 13:52 513K 
[ ]DRC abstract - Direc..>2012-06-26 18:08 286K 
[ ]ECE 695_Lecture 2_Ja..>2015-01-14 10:11 5.4M 
[ ]ECSTrans2012_III-V3D..>2012-04-27 10:56 1.0M 
[ ]ECS_2013_Paper_19504..>2013-11-22 09:48 297K 
[ ]ECS_Review_SFO_2009.pdf2009-05-19 13:32 468K 
[ ]ECS_Transaction_Revi..>2006-11-30 12:44 325K 
[ ]ECT000459_invited_hi..>2010-10-27 14:25 155K 
[ ]ECT_2010_35.pdf 2010-04-20 15:00 496K 
[ ]ECT_2010_nano.pdf 2010-04-20 14:59 504K 
[ ]EDL_1A_2008.pdf 2008-03-24 12:08 195K 
[ ]EDL_2021_Ferroelectr..>2021-11-18 14:14 2.9M 
[ ]EDL_2021_In2O3 High ..>2021-09-10 10:14 1.1M 
[ ]EDL_2021_In2O3 Relia..>2022-01-10 11:09 548K 
[ ]EDL_ALE_InAlN_GaN_MO..>2016-03-30 10:30 944K 
[ ]EDL_ALE_NMOSFET_LD_F..>2013-03-23 11:22 422K 
[ ]EDL_ALE_NMOSFET_LD_e..>2013-03-08 15:49 419K 
[ ]EDL_BAE_GaN_2013.pdf 2013-06-03 12:42 321K 
[ ]EDL_BAE_GaN_MOSHEMT_..>2013-04-23 12:58 317K 
[ ]EDL_BAE_InAlN_GaN_20..>2015-05-05 12:45 597K 
[ ]EDL_BP_ALD Capping_a..>2014-05-29 10:44 623K 
[ ]EDL_BP_RF_ASAP_2014.pdf2014-10-28 17:30 566K 
[ ]EDL_Ga2O3_Dit_Bae_20..>2018-11-13 13:26 1.4M 
[ ]EDL_Ga2O3_FET_2016.pdf 2017-01-05 15:37 744K 
[ ]EDL_Ga2O3_Interface_..>2016-11-15 17:50 728K 
[ ]EDL_GaAsMOSFET_Agere..>2007-07-26 09:47 312K 
[ ]EDL_GaN MOSHEMT MgCa..>2016-05-11 16:22 1.1M 
[ ]EDL_GaN MOSHEMT MgCa..>2017-10-18 13:41 875K 
[ ]EDL_GaSb PMOSFET_201..>2011-05-31 12:30 337K 
[ ]EDL_GaSb PMOSFET_201..>2011-08-04 12:54 341K 
[ ]EDL_In2O3_Scaling_20..>2021-01-17 16:20 437K 
[ ]EDL_InGaAs Inversion..>2007-10-30 11:33 176K 
[ ]EDL_InGaAs NW Variab..>2013-04-23 13:07 1.1M 
[ ]EDL_InGaAs_Reliabili..>2011-04-07 15:47 325K 
[ ]EDL_MoS2 MOSFET_2012..>2012-03-23 15:58 225K 
[ ]EDL_MoS2_Graphene Co..>2014-04-08 12:33 536K 
[ ]EDL_MoS2_Graphene Co..>2014-05-01 12:15 540K 
[ ]EDL_MoS2_PEI_Final.pdf 2013-10-24 16:38 745K 
[ ]EDL_MoS2_PEI_asap.pdf 2013-08-28 12:43 284K 
[ ]EDL_Short Channel Ef..>2009-06-26 10:42 178K 
[ ]EDL_Temporal and The..>2014-11-24 10:51 561K 
[ ]EDL_UIUC_Model_2013.pdf2013-06-03 12:43 319K 
[ ]EDL_Variability_GG_e..>2013-03-08 15:47 1.1M 
[ ]EDL_Yale_Ga2O3_2018.pdf2018-07-06 11:27 695K 
[ ]EDL_Yuchen_BP_P dopi..>2016-03-30 09:53 633K 
[ ]ESL000H27_Chen Wang_..>2012-01-20 10:14 825K 
[ ]ESL000H51_Chen Wang_..>2012-02-08 12:42 1.5M 
[ ]Evidence of a First-..>2006-10-29 23:43 1.2M 
[ ]FE RF MEMs_2020.pdf 2020-01-28 15:38 1.3M 
[ ]Formation and charac..>2006-10-29 18:50 127K 
[ ]Frontier in Material..>2022-07-07 14:47 1.9M 
[ ]GaN MOSHEMT Internat..>2006-11-30 16:06 359K 
[ ]GaN metal-oxide-semi..>2006-10-29 18:54 234K 
[ ]Gang Qiu-Laser BP-20..>2018-02-23 17:22 2.6M 
[ ]Graphene_Book_Chapte..>2012-03-20 17:39 1.3M 
[ ]High-performance GaA..>2006-10-29 18:39 409K 
[ ]IEDM-Dongqi-IZO.PDF 2022-12-19 21:20 567K 
[ ]IEDM-Mengwei-M3D.PDF 2022-12-19 21:20 913K 
[ ]IEDM-PYL-thermal.PDF 2022-12-19 21:20 696K 
[ ]IEDM-Zhuocheng-Relia..>2022-12-19 21:20 599K 
[ ]IEDM 2012_JJ Gu_4D_S..>2013-01-08 13:32 2.1M 
[ ]IEDM 2012_JJ Gu_63mv..>2013-01-08 13:33 1.3M 
[ ]IEDM2013_S07P05.pdf 2013-12-13 15:39 673K 
[ ]IEDM2014_S05P02_BP_o..>2014-12-15 00:38 1.9M 
[ ]IEDM2014_S09P03_Ge_C..>2014-12-15 00:37 1.8M 
[ ]IEDM2014_S16P07_Ge_d..>2014-12-15 00:38 1.8M 
[ ]IEDM2014_S20P01_IIIV..>2014-12-15 00:39 2.6M 
[ ]IEDM2014_S20P03_IIIV..>2014-12-15 00:40 3.3M 
[ ]IEDM 2015_35 NW_Jing..>2015-12-18 07:53 1.9M 
[ ]IEDM 2015_Ge NW CMOS..>2015-12-18 07:54 1.1M 
[ ]IEDM 2018_Chung.PDF 2018-12-12 16:49 891K 
[ ]IEDM 2021 Gupta 15-2..>2021-12-13 01:20 1.1M 
[ ]IEDM 2021 Zehao Lin ..>2021-12-13 01:23 575K 
[ ]IEDM 2023_37-2_Wed_P..>2023-12-17 06:21 1.1M 
[ ]IEDM 2023_37-5_Wed_P..>2023-12-17 06:21 1.3M 
[ ]IEDM 2023_41-1_Wed_P..>2023-12-17 06:21 1.8M 
[ ]IEDM_2007_S23P08.pdf 2007-12-18 09:43 352K 
[ ]IEDM_2008_InGaAs MOS..>2008-12-19 13:26 370K 
[ ]IEDM_2008_Interface.pdf2008-12-19 13:29 535K 
[ ]IEDM_2016_Shin_404.pdf 2016-12-15 14:51 710K 
[ ]IEDM_2016_Yang_127.pdf 2016-12-15 14:56 767K 
[ ]IEDM_2017_2D NCFET_M..>2017-12-12 11:01 1.0M 
[ ]IEDM_2017_Ge NCFET_C..>2017-12-12 10:59 1.1M 
[ ]IEDM_2019_FTJ_06-6-2..>2019-12-16 15:01 1.0M 
[ ]IEDM_2019_Sub1ns_15-..>2019-12-16 15:00 484K 
[ ]IEDM_Gupta_2020.PDF 2020-11-20 17:51 6.3M 
[ ]IEDM_S27P01_Fudan_Pu..>2011-12-08 16:24 425K 
[ ]IEDM_S33P02_GAA_Purd..>2011-12-08 16:26 913K 
[ ]IEEE EDL 2017 Ge nFE..>2017-04-11 15:39 705K 
[ ]IEEE EDL 2017 InGaAs..>2017-04-11 15:48 762K 
[ ]IEEE EDL 2018 Ge Mob..>2018-02-23 17:53 1.1M 
[ ]IEEE EDL 2022_GAA_In..>2023-04-28 09:37 1.1M 
[ ]IEEE EDL 2023_IGO.pdf 2023-04-26 17:01 2.7M 
[ ]IEEE EDL GaN FinFET ..>2017-09-25 12:05 1.0M 
[ ]IEEE EDL_Volumn Inve..>2012-06-26 15:51 420K 
[ ]IEEE JEDS Ga2O3 on D..>2019-09-18 11:20 2.6M 
[ ]IEEESpectrum2016Germ..>2016-12-16 11:14 4.4M 
[ ]IEEE Spectrum GaAs M..>2008-08-06 18:12 286K 
[ ]IEEE Spectrum Nanosh..>2019-09-03 16:50 2.1M 
[ ]IEEE TNS 2017 GaAs.pdf 2017-04-11 15:27 882K 
[ ]IEEE TNS 2017 GeOI.pdf 2017-04-11 15:26 882K 
[ ]IEEE Trans Advanced ..>2009-03-12 15:24 1.7M 
[ ]IEEE Trans Nano MF L..>2013-09-25 12:57 397K 
[ ]III-V MOSFET Science..>2009-03-11 12:14 457K 
[ ]IRPS4A01_2015.pdf 2015-05-05 15:39 880K 
[ ]IRPS2010_wrachien.pdf 2010-05-10 11:21 441K 
[ ]IRPS2014_Shin_4A03.pdf 2014-06-03 13:48 350K 
[ ]IRPS_35_Ge_2017_6A-0..>2017-04-11 13:17 341K 
[ ]IRPS_2018_Noise on M..>2018-03-13 10:41 743K 
[ ]IRPS_GaN_2017_5C-03.pdf2017-04-11 13:15 16M 
[ ]IRPS_InGaAs Planar_2..>2012-04-27 10:29 516K 
[ ]Improvement of GaAs ..>2006-10-29 18:52 374K 
[ ]InGaAs-Al2O3-NIST-Pu..>2010-02-02 19:12 206K 
[ ]InGaAs-Charge-Pumpin..>2010-02-17 10:27 165K 
[ ]J._Phys._D3A_Appl._P..>2018-03-09 12:47 3.0M 
[ ]JAP 2023_Wendy_Edito..>2023-04-28 10:51 1.0M 
[ ]JAP Invited 2022_Don..>2022-08-03 22:07 3.1M 
[ ]JAP_2018_Thermorefle..>2018-01-19 18:11 3.8M 
[ ]JAP_2023_Gupta.pdf 2023-10-30 11:21 3.7M 
[ ]JAP_Graphene Transpo..>2012-01-13 10:01 1.6M 
[ ]JAP_InAs_Interface_2..>2016-12-15 15:01 1.1M 
[ ]JAP_InP_Band Alignme..>2013-01-09 12:55 1.4M 
[ ]JAP_JJGu_InGaAs_2011..>2011-03-09 14:30 2.3M 
[ ]JApplPhys_81_5444_Dy..>2007-07-26 09:55 379K 
[ ]JApplPhys_100_074501..>2006-11-30 12:44 587K 
[ ]JApplPhys_102_034502..>2007-10-07 17:40 165K 
[ ]JApplPhys_113_013711..>2013-01-08 13:03 1.8M 
[ ]JEDS_2018_Jiang_NCFE..>2018-02-23 18:08 1.0M 
[ ]JEM_Mike Bolen_2010.pdf2010-09-24 12:13 610K 
[ ]JPCC-2010-114-10505-..>2010-06-24 16:50 2.3M 
[ ]JPCC_Kun Xu_Graphene..>2014-06-03 15:21 3.4M 
[ ]JPCC_laser annealing..>2012-04-06 14:01 3.5M 
[ ]JPCM_2D Review_Yuche..>2016-05-17 10:24 2.6M 
[ ]JVTBD9294041206_1.pdf 2011-08-03 04:09 338K 
[ ]Leakage current and ..>2006-10-29 18:56 138K 
[ ]MRS Bulletin_2021_Pu..>2021-11-23 11:31 2.4M 
[ ]MSB11021_GaN MOSFET_..>2006-11-30 12:44 377K 
[ ]Micro Raman Zhe Luo ..>2014-04-27 18:28 365K 
[ ]Microelectronic Engi..>2016-02-08 10:54 842K 
[ ]Microelectronics Rel..>2007-07-25 10:51 404K 
[ ]Minority-carrier cha..>2006-10-29 18:41 152K 
[ ]MoS2 Nanoribbon_EDL_..>2012-12-03 15:49 353K 
[ ]Modulation of the hi..>2006-10-29 18:49 135K 
[ ]NC_APL_revision_2019..>2019-03-08 15:57 418K 
[ ]NE In2Se3 FeSFET Fin..>2019-12-16 13:08 1.5M 
[ ]NE In2Se3 FeSFET sup..>2019-09-12 16:49 1.1M 
[ ]NL_1D_Te_ASAP_2017.pdf 2017-06-13 12:45 5.1M 
[ ]NL_1D_Te_Final_2017.pdf2017-07-03 12:08 5.1M 
[ ]NL_2D_Te_QHE_Final_2..>2018-10-12 16:11 3.1M 
[ ]NL_2021_Se mechanics..>2021-09-24 15:15 610K 
[ ]NL_2021_Se mechanics..>2021-09-24 15:10 5.5M 
[ ]NL_2023_dou-et-al-20..>2023-10-30 10:53 3.6M 
[ ]NL_2023_niu-et-al-20..>2023-10-30 11:00 5.3M 
[ ]NL_2024_Thermal Tran..>2024-04-24 11:56 2.6M 
[ ]NL_ALE_MgCaO_GaN.pdf 2016-12-15 14:33 2.3M 
[ ]NL_CVD MoS2_2013_ASA..>2013-06-03 12:58 1.7M 
[ ]NL_Doping_WS2_MoS2_2..>2014-10-28 17:12 1.3M 
[ ]NL_Doping_WS2_MoS2_2..>2015-01-14 13:37 1.3M 
[ ]NL_In2O3_TNL_2020_AS..>2020-12-29 17:53 2.5M 
[ ]NL_In2O3_TNL_2020_SI..>2020-12-29 18:01 152K 
[ ]NL_Te_Thermal_2019_f..>2019-06-21 13:09 5.3M 
[ ]NL_ZrTe5_Gang Qiu_20..>2016-11-29 11:30 2.9M 
[ ]NL_ZrTe5_Gang Qiu_20..>2016-12-15 14:28 2.8M 
[ ]NL_negative Poisson'..>2016-09-22 17:44 4.2M 
[ ]NL_negative Poisson ..>2016-11-15 17:55 4.2M 
[ ]Nano Energy Te 2019.pdf2019-01-02 14:43 2.8M 
[ ]Nano Express_2021_Ba..>2021-09-10 09:56 1.2M 
[ ]Nano Letters Kun NIS..>2013-01-08 13:58 2.1M 
[ ]Nano Letters_2021_Bi..>2021-09-16 14:03 5.3M 
[ ]Nano Letters_2021_Bi..>2021-09-16 14:12 1.6M 
[ ]Nano Letters_2023_CP..>2023-04-26 11:44 5.2M 
[ ]Nano Letters_Te_NIST..>2019-02-14 11:00 4.8M 
[ ]Nano Letters_Te_QHE_..>2018-08-27 12:32 3.1M 
[ ]Nano Letters_Te_Ther..>2019-02-14 10:58 5.3M 
[ ]Nano Letters_WSe2_NC..>2018-07-06 12:25 2.6M 
[ ]Nano Letters_XW_DL_A..>2013-01-08 14:06 2.9M 
[ ]Nano Research_Qin_Se..>2019-02-14 11:07 2.4M 
[ ]Nanolett_2015_IIIV_B..>2015-12-19 11:48 2.0M 
[ ]Nanoscale Advances 2..>2023-04-28 11:10 1.0M 
[ ]Nanoscale_Mechanisms..>2016-03-07 11:53 2.5M 
[ ]Nanotechnology_2017_..>2017-04-11 15:57 1.2M 
[ ]Nanotechnology_2017_..>2017-07-03 12:19 2.6M 
[ ]Nanotechnology_2022_..>2022-01-10 11:41 1.5M 
[ ]Nanotechnology_BP Su..>2016-09-26 12:55 2.6M 
[ ]Nanowire Transistors..>2016-01-27 14:51 162K 
[ ]Nature 2D Report 201..>2015-08-03 09:28 537K 
[ ]Nature Communication..>2018-02-23 17:31 1.1M 
[ ]Nature Communication..>2018-01-18 13:28 1.1M 
[ ]Nature Communication..>2024-01-02 11:36 1.6M 
[ ]Nature Communication..>2015-10-21 10:00 876K 
[ ]Nature Communication..>2020-08-22 15:56 2.1M 
[ ]Nature Electronics 2..>2018-04-23 11:55 2.2M 
[ ]Nature Electronics I..>2022-03-03 17:04 1.8M 
[ ]Nature Electronics I..>2021-11-21 00:15 335K 
[ ]Nature Electronics_1..>2019-12-18 11:54 1.4M 
[ ]Nature Electronics_F..>2020-01-07 10:39 1.7M 
[ ]Nature Nano_nnano.20..>2007-06-13 11:32 575K 
[ ]Nature Nanotechnolog..>2017-12-20 11:24 2.2M 
[ ]Nature Nanotechnolog..>2017-12-20 11:27 3.6M 
[ ]Nature Nanotechnolog..>2020-07-07 16:26 17M 
[ ]Nature Nanotechnolog..>2020-07-07 16:27 864K 
[ ]Nature Physics_Yong ..>2006-11-30 12:44 326K 
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