2008 |2007 |2006 | 2005 | 2004 | 2003| 2002 and early

2024 

Quantum Confinement Controlled Positive to Negative Schottky Barrier Conversion in Ultrathin In2O3 Transistor Contacts
Author(s):Jian-Yu Lin, Chang Niu, Zehao Lin, Taehyun Kim, Beomjin Park, Hyeongjun Jang, Changwook Jeong, Peide D. Ye
Source: 2024 IEEE International Electron Devices Meeting (IEDM 2024), xx-xx, 2024. PDF

First Demonstration of BEOL Wafer-Scale All-ALD Channel CFETs Using IGZO and Te for Monolithic 3D Integration
Author(s): Chang Niu, Pukun Tan, Jian-Yu Lin, Linjia Long, Zehao Lin, Yizhi Zhang, Haiyan Wang, Alessandra Leonhardt, Glen D. Wilk, Peide D. Ye
Source: 2024 IEEE International Electron Devices Meeting (IEDM 2024), xx-xx, 2024. PDF

Highly Robust All-Oxide Transistors Towards Vertical Logic and Memory
Author(s): Zehao Lin, Zhuocheng Zhang, Chang Niu, Hongyi Dou, Ke Xu, Mir Md Fahimul Islam, Jian-Yu Lin, Changhyuck Sung, Minji Hong, Daewon Ha, Haiyan Wang, Muhammad Ashraful Alam, Peide D. Ye
Source: IEEE Transactions on Electronic Devices xxx, xxx, 2024. PDF

Wafer-Scale Atomic-Layer-Deposited TeOx/Te Heterostructure P-Type Thin-Film Transistors
Author(s): Pukun Tan, Chang Niu, Zehao Lin, Jian-Yu Lin, Linjia Long, Yizhi Zhang, Glen Wilk, Haiyan Wang, and Peide D. Ye
Source: Nano Letters xxx, xxx, 2024. PDF

First Demonstration of Top-Gate Enhancement-Mode ALD In2O3 FETs with High Thermal Budget of 600 °C for DRAM Applications
Author(s): Jian-Yu Lin†, Zhuocheng Zhang†, Zehao Lin, Chang Niu, Yizhi Zhang, Yifan Zhang, Taehyun Kim, H. Jang, C. Sung, M. Hong, S. M. Lee, T. Lee, M. H. Cho, D. Ha, Changwook Jeong, Haiyan Wang, M. A. Alam, and Peide D. Ye
Source: IEEE Electron Device Letters 45, 1851, 2024. PDF

Enhancement of In2O3 Field-Effect Mobility Up To 152 cm2V-1s-1 Using HZO-Based Higher-k Linear Dielectric
Author(s): Zehao Lin, Chang Niu, Hyeongjun Jang, Taehyun Kim, Yizhi Zhang, Haiyan Wang, Changwook Jeong and Peide D. Ye
Source: Symposia on VLSI Technology and Circuits (VLSI 2024), T4-3, 2024. PDF

Positive to Negative Schottky Barrier Transition in Metal/Oxide Semiconductor Contacts by Tuning Indium Concentration in IGZO
Author(s):Sumi Lee, Chang Niu, Yizhi Zhang, Haiyan Wang, and Peide D. Ye
Source: Symposia on VLSI Technology and Circuits (VLSI 2024), T16-3, 2024. PDF

Highly Robust All-Oxide Transistors with Ultrathin In2O3 as Channel and Thick In2O3 as Metal Gate Towards Vertical Logic and Memory
Author(s): Z. Lin, Z. Zhang, C. Niu, H. Dou, K. Xu, F. Sakib, J.-Y. Lin, C. Sung, M. Hong, D. Ha, H. Wang, M. A. Alam, and Peide D. Ye
Source: Symposia on VLSI Technology and Circuits (VLSI 2024), T4-1, 2024. PDF

Hydrogen-induced tunable remanent polarization in a perovskite nickelate
Author(s): Shriram Ramanathan, Yifan Yuan, Michele Kotiuga, Tae Joon Park, Yuanyuan Ni, Arnob Saha, Hua Zhou, Jerzy Sadowski, Abdullah Al-Mahboob, Haoming Yu, Kai Du, Minning Zhu, Sunbin Deng, Ravindra Bisht, Xiao Lyu, Chung-Tse Wu, Peide D. Ye, Abhronil Sengupta, Sang-Wook Cheong, Xiaoshan Xu, Karin Rabe, and Ranjan Patel
Source: Nature Communications 15, 4717, 2024. PDF

Superconducting Field-effect Transistor with PdxTe-Te Intimate Contacts
Author(s): Chang Niu, Mingyi Wang, Zhuocheng Zhang, Gang Qiu, Yixiu Wang, Dongqi Zheng, Pai-Ying Liao, Wenzhuo Wu, Peide D. Ye
Source: ACS Nano 2024, 18, 15107-15113. PDF

Optically Gated Electrostatic Field-Effect Thermal Transistor
Author(s): Shouyuan Huang, Neil Ghosh, Chang Niu, Yong P. Chen, Peide D. Ye, and Xianfan Xu
Source: Nano Letters 2024, 24, 5139-5145. PDF

Reduced temperature in lateral (AlxGa1-x)2O3/Ga2O3 heterojunction field effect transistor capped with nanocrystalline diamond
Author(s): Hannah N. Masten, James Spencer Lundh, Tatyana I. Feygelson, Kohei Sasaki, Zhe Cheng, Joseph A. Spencer, Pai-Ying Liao, Jennifer K. Hite, Daniel J. Pennachio, Alan G. Jacobs, Michael A. Mastro, Boris N. Feigelson, Akito Kuramata, Peide D. Ye, Samuel Graham, Bradford B. Pate, Karl D. Hobart, Travis J. Anderson, Marko J. Tadjer
Source: Applied Physics Letters 124, 153502, 2024. PDF

Direct Observation for Distinct Behaviors of Gamma-RayIrradiation-Induced Subgap Density-of-States in AmorphousInGaZnO TFTs by Multiple-Wavelength Light Source
Author(s): Jaewook Yoo, Hyeun Seung Jo, Seung-Bae Jeon, Taehwan Moon, Hongseung Lee,Seongbin Lim, Hyeonjun Song, Binhyeong Lee, Soon Joo Yoon, Soyeon Kim, Minah Park,Seohyeon Park, Jo Hak Jeong, Keun Heo, Yoon Kyeung Lee, Peide D. Ye, TaeWan Kim, and Hagyoul Bae
Source: Advanced Electronic Materials 2024, 2300906. PDF

Low-frequency noise characterization of positive bias stress effect on the spatial distribution of trap in b-G2O3 FinFET
Author(s): Hagyoul Bae, Geon Bum Lee, Jaewook Yoo, Khwang-Sun Lee, Ja-Yun Ku, Kihyun Kim, Jungsik Kim,Peide D. Ye, Jun-Young Park, Yang-Kyu Choi
Source: Solid State Electronics 215, 108882, 2024. PDF

Surface Accumulation Induced Negative Schottky Barrier and Ultralow Contact Resistance in Atomic-Layer-Deposited In2O3 Thin-Film Transistors
Author(s): Chang Niu, Zehao Lin, Vahid Askarpour, Zhuocheng Zhang, Pukun Tan, Mengwei Si, Zhongxia Shang, Yizhi Zhang, Haiyan Wang, Mark S. Lundstrom, Jesse Maassen, and Peide D. Ye
Source: IEEE Transaction on Electronic Devices, Vol. 71, No. 5, 3403-3410, 2024. PDF

2023 

First Determination of Thermal Resistance and Thermal Capacitance of Atomic-Layer-Deposited In2O3 Transistors
Author(s): J.-Y. Lin, Z. Zhang, S. Alajlouni, P.-Y. Liao, Z. Lin, C. Niu, A. Shakouri, and Peide D. Ye
Source: 2023 IEEE International Electron Devices Meeting (IEDM 2023), 37-5, 2023. PDF

Record-Low Metal to Semiconductor Contact Resistance in Atomic-Layer-Deposited In2O3 TFTs Reaching the Quantum Limit
Author(s): C. Niu, Z. Lin, Z. Zhang, P. Tan, M. Si, Z. Shang, Y. Zhang, H. Wang and Peide D. Ye
Source: 2023 IEEE International Electron Devices Meeting (IEDM 2023), 37-2, 2023. PDF

Fluorine Anion-Doped Ultra-Thin InGaO Transistors Overcoming Mobility-Stability Trade-off
Author(s): J. Zhang, Z. Zhang, H. Dou, Z. Lin, K. Xu, W. Yang, X. Zhang, H. Wang and Peide D. Ye
Source: 2023 IEEE International Electron Devices Meeting (IEDM 2023), 41-1, 2023. PDF

High-pressure induced Weyl semimetal phase in 2D Tellurium
Author(s):Chang Niu, Zhuocheng Zhang, David Graf, Seungjun Lee, Mingyi Wang, Wenzhuo Wu, Tony Low, and Peide D. Ye
Source: Communications Physics (Nature Publisher), Vol. 6, 345, 2023. PDF

Review — Extremely Thin Amorphous Indium Oxide Transistors (Invited)
Author(s):Adam Charnas, Zhuocheng Zhang, Zehao Lin, Dongqi Zheng, Jie Zhang, Mengwei Si and Peide D. Ye
Source: Advanced Materials, 2304044, 2023. PDF

Back-End-of-Line-Compatible Scaled InGaZnO Transistors by Atomic Layer Deposition
Author(s):Jie Zhang, Zehao Lin, Zhuocheng Zhang, Ke Xu, Hongyi Dou, Bo Yang, Adam Charnas, Dongqi Zheng, Xinghang Zhang, Haiyang Wang, and Peide D. Ye
Source: IEEE Transactions on Electron Devices, Vol 70, No. 12, 6651-6657, 2023. PDF

Concurrent characterization of GaN MOSHEMT gate leakage via electrical and thermoreflectance measurements
Author(s):David Kortge, Kerry Maize, Xiao Lyu, Peter Bermel, Peide D. Ye, and Ali Shakouri
Source: Microelectronics Reliability, Vol 148, 115122, 2023. PDF

Ultrahigh Bias Stability of ALD In2O3 FETs Enabled by High Temperature O2 Annealing
Author(s): Zhuocheng Zhang, Zehao Lin, Chang Niu, Mengwei Si, Muhammad A. Alam and Peide D. Ye
Source: Symposia on VLSI Technology and Circuits (VLSI 2023), T11-3, 2023. PDF

Ultrathin Atomic-Layer-Deposited In2O3 Radio-Frequency Transistors with Record High fT of 36 GHz and BEOL Compatibility
Author(s): Dongqi Zheng†, Adam Charnas†, Jian-Yu Lin, Jackson Anderson, Dana Weinstein and Peide D. Ye
Source: Symposia on VLSI Technology and Circuits (VLSI 2023), T11-1, 2023. PDF

First Demonstration of BEOL-Compatible Atomic-Layer-Deposited InGaZnO TFTs with 1.5 nm Channel Thickness and 60 nm Channel Length Achieving ON/OFF Ratio Exceeding 10^11, SS of 68 mV/dec, Normal-off Operation and High Positive Gate Bias Stability
Author(s): Jie Zhang, Zhuocheng Zhang, Zehao Lin, Ke Xu, Hongyi Dou, Bo Yang, Xinhang Zhang, Haiyan Wang and Peide D. Ye
Source: Symposia on VLSI Technology and Circuits (VLSI 2023), T17-2, 2023. PDF

HZO Scaling for Ferroelectric Devices: Enabling Low-Temperature Process, Low-Voltage Operation, and High Robustness
Author(s):Eunseon Yu, Xiao Lyu, Mengwei Si, Peide D. Ye, Kaushik Roy
Source: IEEE Transactions on Electron Devices, Vol 70, No. 6, 2962-2969, 2023. PDF

Phase-field simulations of polarization variations in polycrystalline Hf0.5Zr0.5O2 based MFIM: Voltage dependence and dynamics
Author(s):Revanth Koduru, Imtiaz Ahmed, Atanu K. Saha, Xiao Lyu, Peide D. Ye, and Sumeet K. Gupta
Source: Journal of Applied Physics 134, 084104, 2023. PDF

2D Piezoelectrics, pyroelectrics, and ferroelectrics
Author(s):Wenjuan Zhu, Xia Hong, Peide D. Ye, and Yi Gu
Source: Journal of Applied Physics 133, 120402, 2023. PDF

Epitaxial Growth of Aurivillius Bi3Fe2Mn2Ox Supercell Thin Films on Silicon
Author(s):James P. Barnard, Robynne L. Paldi, Matias Kalaswad, Zihao He, Hongyi Dou, Yizhi Zhang, Jianan Shen, Dongqi Zheng, Neil R. Dilley, Raktim Sarma, Aleem M. Siddiqui, Peide D. Ye, and Haiyan Wang
Source: Crystal Growth & Design Vol 23, No 4, 2248-2256, 2023. PDF

ZnO–ferromagnetic metal vertically aligned nanocomposite thin films for magnetic, optical and acoustic metamaterials
Author(s):Robynne L. Paldi, Matias Kalaswad, Juanjuan Lu, James P. Barnard, Nicholas A. Richter, Mengwei Si, Nirali A. Bhatt, Peide D. Ye, Raktim Sarma, Aleem Siddiqui, Jijie Huang, Xinghang Zhang and Haiyan Wang
Source: Nanoscale Advances Vol 5, No 1, 247-254, 2023. PDF

Self-Assembled Au Nanoelectrodes: Enabling Low-Threshold Voltage HfO2-Based Artificial Neurons
Author(s):Hongyi Dou, Zehao Lin, Zedong Hu, Benson Kunhung Tsai, Dongqi Zheng, Jiawei Song, Juanjuan Lu, Xinghang Zhang, Quanxi Jia, Judith L. MacManus-Driscoll, Peide D. Ye and Haiyan Wang
Source: Nano Letters 23, 9711-9718, 2023. PDF

Tunable Chirality-Dependent Nonlinear Electrical Responses in 2D Tellurium
Author(s):Chang Niu, Gang Qiu, Yixiu Wang, Pukun Tan, Mingyi Wang, Jie Jian, Haiyan Wang, Wenzhuo Wu, Peide D. Ye
Source: Nano Letters 23, 8445-8453, 2023. PDF

Tunable Circular Photogalvanic and Photovoltaic Effect in 2D Tellurium with Different Chirality
Author(s):Chang Niu, Shouyuan Huang, Neil Ghosh, Pukun Tan, Mingyi Wang, Wenzhuo Wu, Xianfan Xu, Peide D. Ye
Source: Nano Letters 23, 3599-3606, 2023. PDF

Transient Thermal and Electrical Co-Optimization of BEOL Top-Gated ALD In2O3 FETs Toward Monolithic 3-D Integration
Author(s):Pai-Ying Liao, Dongqi Zheng, Sami Alajlouni, Zhuocheng Zhang, Mengwei Si, Jie Zhang, Jian-Yu Lin, Tatyana I. Feygelson, Marko J. Tadjer, Ali Shakouri, Peide D. Ye
Source: IEEE Transactions on Electron Devices, Vol 70, No. 4, 2052-2058, 2023. PDF

Ultrathin InGaO Thin Film Transistors by Atomic Layer Deposition
Author(s):Jie Zhang, Dongqi Zheng, Zhuocheng Zhang, Adam Charnas, Zehao Lin, Peide D. Ye
Source: IEEE Electron Device Letters, Vol 44, No. 2, 273-276, 2023. PDF

Ultrathin Indium Oxide Thin-Film Transistors With Gigahertz Operation Frequency
Author(s):Adam Charnas, Jackson Anderson, Jie Zhang, Dongqi Zheng, Dana Weinstein, Peide D. Ye
Source: IEEE Transactions on Electron Devices, Vol 70, No. 2, 532-536, 2023. PDF

Alleviation of Self-Heating Effect in Top-Gated Ultrathin In2O3 FETs Using a Thermal Adhesion Layer
Author(s):Pai-Ying Liao, Krutarth Khot, Sami Alajlouni, Mike Snure, Jinhyun Noh, Mengwei Si, Zhuocheng Zhang, Ali Shakouri, Xiulin Ruan, Peide D. Ye
Source: IEEE Transactions on Electron Devices, Vol 70, No. 1, 113-120, 2023. PDF

2022 

Reliability of Atomic-Layer-Deposited Gate-All-Around In2O3 Nano-Ribbon Transistors with Ultra-High Drain Currents                
Author(s): Z. Zhang, Z. Lin, A. Charnas, H. Dou, Z. Shang, J. Zhang, M. Si, H. Wang, M. A. Alam and Peide D. Ye
Source: 2022 IEEE International Electron Devices Meeting (IEDM 2022), T 30.3.1, 703-706, 2022. PDF

First Demonstration of BEOL-Compatible Ultrathin Atomic-Layer-Deposited InZnO Transistors with GHz Operation and Record High Bias-Stress Stability                
Author(s): D. Zheng, A. Charnas, J. Anderson, H. Dou, Z. Hu, Z. Lin, Z. Zhang, J. Zhang, P.-Y. Liao, M. Si, H. Wang, D. Weinstein and P. D. Ye
Source: 2022 IEEE International Electron Devices Meeting (IEDM 2022), T 4.3.1, 483-486, 2022. PDF

Transient Thermal and Electrical Co-Optimization of BEOL Top-Gated ALD In2O3 FETs on Various Thermally Conductive Substrates Including Diamond               
Author(s): P.-Y. Liao, S. Alajlouni, Z. Zhang, Z. Lin, M. Si, J. Noh, T. I. Feygelson, M. J. Tadjer, A. Shakouri, and Peide D. Ye
Source: 2022 IEEE International Electron Devices Meeting (IEDM 2022), T12.4.1, 286-289, 2022. PDF

Monolithic 3D Integration of Vertically Stacked CMOS Devices and Circuits with High-Mobility Atomic-Layer-Deposited In2O3 n-FET and Polycrystalline Si p-FET: Achieving Large Noise Margin and High Voltage Gain of 134 V/V                
Author(s): W. Tang, Z. Lin, Z. Wang, Z. Lin, L. Feng, Z. Liu, X. Li, P. D. Ye, X. Guo, M. Si
Source: 2022 IEEE International Electron Devices Meeting (IEDM 2022), T 20.4.1, 483-486, 2022. PDF

A Gate-All-Around In2O3 Nanoribbon FET with Near 20 mA/um Drain Current                
Author(s): Zhuocheng Zhang, Zehao Lin, Pai-Ying Liao, Vahid Askarpour, Hongyi Dou, Zhongxia Shang, Adam Charnas, Mengwei Si, Sami Alajlouni, Ali Shakouri, Haiyan Wang, Mark Lundstrom, Jesse Maassen, and Peide D. Ye
Source: IEEE Electron Devices Letters, Vol. 43, No. 11, 1905-1908, 2022. PDF

Fluorine-passivated In2O3 Thin Film Transistors with Improved Electrical Performance via Low-Temperature CF4/N2O Plasma (invited)                
Author(s): Jie Zhang, Adam Charnas, Zehao Lin, Dongqi Zheng, Zhuocheng Zhang, Pai-Ying Liao, Dmitry Zemlyanov and Peide D. Ye
Source: Applied Physics Letters, 121, 172101, 2022. PDF

Improved Stability with Atomic-Layer-Deposited Encapsulation on Atomic-Layer In2O3 Transistors by Reliability Characterization                
Author(s): Adam Charnas, Mengwei Si, Zehao Lin and Peide D. Ye
Source: IEEE Transactions on Electronic Devices, Vol 69, No 10, 5549-5555, 2022. PDF

Ultrathin two-dimensional van der Waals asymmetric ferroelectric semiconductor junctions                
Author(s): Dongqi Zheng, Mengwei Si, Sou-Chi Chang, Nazila Haratipour, Zhizhong Chen, Adam Charnas, Shouyuan Huang, Kang Wang, Letian Dou, Xianfan Xu, Uygar E. Avci and Peide D. Ye
Source: Journal of Applied Physics, 132, 054101, 2022. PDF

Characterization of Interface and Bulk Traps in Ultrathin Atomic-Layer-Deposited Oxide Semiconductor MOS Capacitors by C-V and Conductance Method               
Author(s): Ziheng Wang, Zehao Lin, Mengwei Si and Peide D. Ye
Source: Frontiers in Materials, Vol. 9, 850451, 2022. PDF

Vertically Stacked Multilayer Atomic-layer-deposited Sub-1-nanometer In2O3 Field-effect Transistors with Back-end-of-line Compatibility (Featured)                
Author(s): Zhuocheng Zhang, Zehao Lin, Mengwei Si, Di Zhang, Hongyi Dou, Zhizhong Chen, Adam Charnas, Haiyan Wang and Peide D. Ye
Source: Applied Physics Letters, 120, 202104, 2022. PDF

Ultra-Fast Operation of BEOL-Compatible Atomic-Layer-Deposited In2O3 Fe-FETs: Achieving Memory Performance Enhancement with Memory Window of 2.5 V and High Endurance > 10^9 Cycles without VT Drift Penalty
Author(s): Zehao Lin, Mengwei Si and Peide D. Ye
Source: Symposia on VLSI Technology and Circuits (VLSI 2022), TF13-2, 2022. PDF

Determination of Domain Wall Velocity and Nucleation Time by Switching Dynamics Studies of Ferroelectric Hafnium Zirconium Oxide
Author(s): Xiao Lyu, Pragya R. Shrestha, Mengwei Si, Panni Wang, Junkang Li, Kin P. Cheung, Shimeng Yu and Peide D. Ye
Source: Symposia on VLSI Technology and Circuits (VLSI 2022), TF07-2, 2022. PDF

Thermal Studies of BEOL-compatible Top-Gated Atomically Thin ALD In2O3 FETs
Author(s): Pai-Ying Liao, Sami Alajlouni, Mengwei Si, Zhuocheng Zhang, Zehao Lin, Jinhyun Noh, Calista Wilk, Ali Shakouri, Peide D. Ye
Source: Symposia on VLSI Technology and Circuits (VLSI 2022), TF05-2, 2022. PDF

The Resurrection of Tellurium as an Elemental Two-Dimensional Semiconductor
Author(s):Gang Qiu, Adam Charnas, Chang Niu, Yixiu Wang, Wenzhuo Wu, Peide D. Ye
Source: npj 2D Materials and Applications 6, 17, 2022. PDF

Scaling of Atomic-Layer-Deposited Atomically Thin Indium Oxide Transistors
Author(s):Mengwei Si, Zehao Lin, Zhizhong Chen, Xing Sun, Haiyan Wang, Peide D. Ye
Source: Nature Electronics 5(3), 164-170, 2022. https://doi.org/10.1038/s41928-022-00718-w PDF Supplement

Enhancement of Thermal Transfer from ß-Ga2O3 Nano-membrane Field-effect Transistors to High Thermal Conductivity Substrate by Inserting an Interlayer               
Author(s): Jinhyun Noh, Prabudhya Roy Chowdhury, Mauricio Segovia, Sami Alajlouni, Mengwei Si, Adam R. Charnas, Shouyuan Huang, Kerry Maize, Ali Shakouri, Xianfan Xu, Xiulin Ruan, and Peide D. Ye
Source: IEEE Transactions on Electronic Devices, 69 (3), 1186-1190, 2022. PDF

2021 

Ionic control over ferroelectricity in 2D layered van der Waals capacitors
Author(s):Sabine Neumayer, Mengwei Si, Junkang Li, Pai-Ying Liao, Lei Tao, Amdrew O'Hara, Sokrates Pantelides, Peide D. Ye, Petro Maksymovych, Nina Balke
Source: ACS Applied Materials & Interfaces 14, 3018-3026, 2022. PDF Supplement

Controlling Threshold Voltage of CMOS SOI Nanowire FETs with Sub-1-nm Dipole Layers Formed by Atomic Layer Deposition               
Author(s): Dongqi Zheng, Wonil Chung, Zhizhong Chen, Mengwei Si, Calista Wilk and Peide D. Ye
Source: IEEE Transactions on Electronic Devices, 69 (2), 851-856, 2022. PDF

Atomically-thin In2O3 Field-effect Transistors with 10^17 Current On/Off Ratio                
Author(s): Adam Charnas, Zehao Lin, Zhuocheng Zhang, and Peide D. Ye
Source: Applied Physics Letters, 119, 263503, 2021. PDF

Positive Bias Temperature Instability and Hot Carrier Degradation of Back-end-of-Line, nm-thick, In2O3 Thin-Film Transistors               
Author(s): Yen-Pu Chen, Mengwei Si, Bikram K. Mahajan, Zehao Lin, Peide D. Ye, and Muhammad A. Alam
Source: IEEE Electron Device Letters, vol. 43, no. 2, 232-235, 2022. PDF

First demonstration of robust tri-gate ß-Ga2O3 nano-membrane field-effect transistors               
Author(s): Hagyoul Bae, Tae Joon Park, Jinhyun Noh, Wonil Chung, Mengwei Si, Shriram Ramanathan and Peide D. Ye
Source: Nanotechnology, 33, 125201, 2022. PDF

High-Peformance BEOL-Compatible Atomic-Layer-Deposited In2O3 Fe-FETs Enabled by Channel Length Scaling down to 7 nm: Achieving Performance Enhancement with Large Memory Window of 2.2 V, Long Retention > 10 years and High Endurance > 10^8 Cycles                
Author(s): Z. Lin, M. Si, Y.-C. Luo, X. Lyu, A. Charnas, Z. Chen, Y.Z. Yu, W. Tsai, P. McIntyre, R. Kanjolia, M. Moinpour, S. Yu, P. D. Ye
Source: 2021 International Electron Device Meeting (IEDM 2021), TF17.4 386-389. 2021. PDF

Variation and Stochasticity in Polycrystalline HZO based MFIM: Grain-Growth Coupled 3D Phase Field Model based Analysis               
Author(s): R. Kodura, A. K. Saha, M. Si, X. Lyu, Peide D. Ye, and S. K. Gupta
Source: 2021 International Electron Device Meeting (IEDM 2021), TF15.2. 330-333, 2021. PDF

Atomically Thin Indium-Tin-Oxide Transistors Enabled by Atomic Layer Deposition
Author(s): Zhuocheng Zhang, Yaoqiao Hu, Zehao Lin, Mengwei Si, Adam Charnas, Kyeongjae Cho, Peide D. Ye
Source: IEEE Transaction on Electron Devices , Vol. 69, No. 1, 231-236, 2022. PDF

Overview and Outlook of Emerging Non-Volatile Memories               
Author(s): Mengwei Si, Huai-Yu Cheng, Takashi Ando, Guohan Hu, Peide D. Ye
Source: MRS Bulletin, 46, 1-13, October 2021. PDF

Ferroelectric FET Based Coupled-Oscillatory Network for Edge Detection               
Author(s): Eunseon Yu, Amogh Agrawal, Dongqi Zheng, Mengwei Si, Peide D. Ye, Sumeet K. Gupta, Kaushik Roy
Source: IEEE Electron Device Letters, 42, 1670-1673, 2021. PDF

Polarization Switching in HZO-Dielectric Stack: The Role of Dielectric Thickness               
Author(s): Atana K. Saha, Mengwei Si, Peide D. Ye, and Sumeet K. Gupta
Source: Applied Physics Letters, 119, 122903, 2021. PDF

Mechanical Anisotropy in Two-Dimensional Selenium Atomic Layers               
Author(s): Jing-Kai Qin, Chao Su,Zhao Qin, Jianyang Wu, Hua Guo, Liang Zhen, Cheng-Yan Xu, Yang Chai, Chao Wang, Xiaodong He, Peide D. Ye, Jun Lou
Source: Nano Letters, 21, 8043-8050, 2021. PDF SI

Bilayer Quantum Hall States in an n-type Wide Tellurium Quantum Well               
Author(s): Chang Niu, Gang Qiu, Yixiu Wang, Mengwei Si, Wenzhuo Wu and Peide D. Ye
Source: Nano Letters, 21, 7527-7533, 2021. PDF SI

High-Performance Atomic-Layer-Deposited Indium Oxide 3-D Transistors and Integrated Circuits for Monolithic 3-D Integration               
Author(s): Mengwei Si, Zehao Lin, Zhizhong Chen and Peide D. Ye
Source: IEEE Transactions on Electronic Devices, 68, 6605-6609, 2021. PDF

The Critical Role of Charge Balance on the Memory Characteristics of Ferroelectric Field-Effect Transistors               
Author(s): Mengwei Si and Peide D. Ye
Source: IEEE Transactions on Electronic Devices, 68 (10), 5108-5113, 2021. PDF

First Demonstration of Atomic-Layer-Deposited BEOL-Compatible In2O3 3D Fin Transistors and Integrated Circuits: High Mobility of 113 cm2/Vs, Maximum Drain Current of 2.5 mA/um and Maximum Voltage Gain of 38 V/V in In2O3 Inverter
Author(s): Mengwei Si, Zehao Lin, Zhizhong Chen and Peide D. Ye
Source: Symposia on VLSI Technology and Circuits (VLSI 2021), TF2-4, Highlight, 2021. PDF

High-Performance In2O3-Based 1T1R FET for BEOL Memory Application               
Author(s): Zehao Lin, Mengwei Si, Xiao Lyu and Peide D. Ye
Source: IEEE Transactions on Electronic Devices, 68 (8), 3775-3779, 2021. PDF

Current Annealing to Improve Drain Output Performance of ß-Ga2O3 Field-Effect Transistor
Author(s): Hagyoul Bae, Khwang-Sun Lee, Peide D. Ye, and Jun-Young Park
Source: Solid State Electronics, 185, 108134, 2021. PDF

Ultrathin Transparent Copper(I) Oxide Films Grown by Plasma-Enhanced Atomic Layer Deposition for BEOL p-Type Transistors
Author(s): Hagyoul Bae, Adam Charnas, Wonil Chung, Mengwei Si, Xiao Lyu, Xin Sun, Haiyan Wang, Dmitry Zemlyanov, and Peide D. Ye
Source: Nano Express, 2, 020023, 2021. PDF

First Experimental Demonstration of Robust HZO/ß-Ga2O3 Ferroelectric Field-Effect Transistors as Synaptic Devices for Artificial Intelligence Applications in a High Temperature Environment
Author(s): Jinhyun Noh, Hagyoul Bae, Junkang Li, Yandong Luo, Yiming Qu, Tae Joon Park, Mengwei Si, Xuegang Chen, Adam R. Charnas, Wonil Chung, Xiaochen Peng, Shriram Ramanathan, Shimeng Yu, and Peide D. Ye
Source: IEEE Transactions on Electronic Devices 68, 2515, 2021. PDF

Asymmetric Metal/a-In2Se3/Si Crossbar Ferroelectric Semiconductor Junction
Author(s): Mengwei Si, Zhuocheng Zhang, Sou-Chi Chang, Nazila Haratipour, Dongqi Zheng, Junkang Li, Uygar E. Avci and Peide D. Ye
Source: ACS Nano 15, 5689-5695, 2021. PDF SI

BEOL Compatible Indium-Tin-Oxide Transistors: Switching of Ultra-High-Density 2D Electron Gas over 0.8×10^14 /cm2 at Oxide/Oxide Interface by the Change of Ferroelectric Polarization               
Author(s): Mengwei Si, Anna Murray, Zehao Lin, Joseph Andler, Junkang Li, Jinhyun Noh, Sami Alajlouni, Chang Niu, Xiao Lyu, Dongqi Zheng, Kerry Maize, Ali Shakouri, Suman Datta, Rakesh Agrawal, and Peide D. Ye
Source: IEEE Transactions on Electronic Devices, 68 (7), 3195-3199, 2021. PDF

Enhancement-Mode Atomic-Layer-Deposited In2O3 Transistors with Maximum Drain Current of 2.2 A/mm at Drain Voltage of 0.7 V by Low-Temperature Annealing and Stability in Hydrogen Environment
Author(s): Mengwei Si, Adam Charnas, Zehao Lin, Peide D. Ye
Source: IEEE Transactions on Electronic Devices 68 (3), 1075-1080, 2021. PDF

Realization of enhancement-mode atomic-layer thin In2O3 transistors with maximum current exceeding 2 A/mm at drain voltage of 0.7 V enabled by room temperature oxygen plasma treatment (featured)
Author(s): Adam Charnas, Mengwei Si, Zehao Lin, Peide D. Ye
Source: Applied Physics Letters 118, 052107, 2021. PDF

Quantitative Characterization of Ferroelectric/Dielectric Interface Traps by Pulse Measurements               
Author(s): Junkang Li, Mengwei Si, Yiming Qu, Xiao Lyu, Peide D. Ye
Source: IEEE Transactions on Electronic Devices, 66 (3), 1214-1220, 2021. PDF

2020 

Why In2O3 Can Make 0.7nm Atomic Layer Thin Transistors?
Author(s): Mengwei Si, Yaoqiao Hu, Zehao Lin, Xing Sun, Adam Charnas, Dongqi Zheng, Xiao Lyu, Haiyan Wang, Kyeongjae Cho, Peide D. Ye
Source: Nano Letters 21, 500, 2021. PDF Supplement

Scaled Atomic-Layer-Deposited Indium Oxide Nanometer Transistors with Maximum Drain Current Exceeding 2 A/mm at Drain Voltage of 0.7 V
Author(s): Mengwei Si, Zehao Lin, Adam Charnas, Peide D. Ye
Source: IEEE Electron Device Letters 42 (2), 184-187, 2021. PDF

Ferroelectric Thickness Dependent Domain Interactions in FEFETs for Memory and Logic: A Phase-field Model-based Analysis
Author(s): Atanu K. Saha, Mengwei Si, Ki Ni, Suman Datta, Peide D. Ye, Sumeet K. Gupta
Source: 2020 International Electron Devices Meeting (IEDM): December 12-16, 2020. T.4.3 pp.63-66. PDF

a-In2Se3 based ferroelectric-semiconductor metal junction for non-volatile memories
Author(s): Atanu K. Saha, Mengwei Si, Peide D. Ye, and Sumeet K. Gupta
Source: Applied Physics Letters 117, 183504, 2020. PDF

Microscopic Origin of Inhomogeneous Transport in Four-Terminal Tellurene Devices
Author(s): Benjamin M. Kupp, Gang Qiu, Yixiu Wang, Clayton B. Casper, Thomas M. Wallis, Joanna M. Atkin, Wenzhuo Wu, Peide D. Ye, Pavel Kabos, Samuel Berweger
Source: Applied Physics Letters 117, 253102, 2020. PDF

Quantitative Characterization of Interface Traps in Ferroelectric/Dielectric Stack Using Conductance Method
Author(s): Yiming Qu, Junkang Li, Mengwei Si, Xiao Lyu, Peide D. Ye
Source: IEEE Transactions on Electron Devices 67, 5315, 2020. PDF

Indium-Tin-Oxide Transistors with One Nanometer Thick Channel and Ferroelectric Gating
Author(s): Mengwei Si, Joseph Andler, Xiao Lyu, Chang Niu, Suman Datta, Rakesh Agrawal, Peide D. Ye
Source: ACS Nano 14, 11542-11547, 2020. PDF Supplement

Anisotropic Signal Processing with Trigonal Selenium Nanosheet Synaptic Transistors
Author(s): Jing-Kai Qin, Feichi Zhou, Jingli Wang, Jiewei Chen, Cong Wang, Shouxin Zhao, Yi Pei, Liang Zhen, Peide D. Ye, Shu Ping Lau, Cheng-Yan Xu, Yang Chai
Source: ACS Nano 14, 10018-10026, 2020. PDF

Bandgap engineering of two-dimensional semiconductor materials
Author(s): A. Chaves, J. G. Azadani, Hussain Alsalman, D. R. da Costa, R. Frisenda, A. J. Chaves, Seung Hyun Song, Y. D. Kim, Daowei He, Jiadong Zhou, A. Castellanos-Gomez, F. M. Peeters, Zheng Liu, C. L. Hinkle, Sang-Hyun Oh, Peide D. Ye, Steven J. Koester, Young Hee Lee, Ph. Avouris, Xinran Wang and Tony Low
Source: npj 2D Materials and Applications, 2020. PDF

Alignment of Polarization against an Electric Field in van der Waals Ferroelectrics
Author(s):Sabine M. Neumayer, Lei Tao, Andrew O’Hara, John Brehm, Mengwei Si, Pai-Ying Liao, Tianli Feng, Sergei V. Kalinin, Peide D. Ye, Sokrates T. Pantelides, Petro Maksymovych, and Nina Balke
Source: Physical Review Applied 13, 064963 (2020). PDF

The Impact of Channel Semiconductor on the Memory Characteristics of Ferroelectric Field-Effect Transistors
Author(s): Mengwei Si, Zehao Lin, Jinhyun Noh, Junkang Li, Wonil Chung, Peide D. Ye
Source: Journal of the Electron Devices Society, 8, 846-849, 2020. PDF

Ultrafast photoinduced band splitting and carrier dynamics in chiral tellurium nanosheets
Author(s): Giriraj Jnawali, Yuan Xiang, Samuel M. Linser, Iraj Abbasian Shojaei, Ruoxing Wang, Gang Qiu, Chao Lian, Bryan M. Wong, Wenzhuo Wu, Peide D. Ye, Yongsheng Leng, Howard E. Jackson, and Leigh M. Smith
Source: Nature Communications 11, 3991, 2020. PDF

Quantum Hall effect of Weyl fermions in n-type semiconducting tellurene
Author(s): Gang Qiu, Chang Niu, Yixiu Wang, Mengwei Si, Zhuocheng Zhang, Wenzhuo Wu, Peide D. Ye
Source: Nature Nanotechnology doi.org/10.1038/s41565-020-0715-4 (2020). PDF Supplement

Energy Transport by Radiation in Hyperbolic Material Comparable to Conduction
Author(s): Hakan Salihoglu, Vasudevan Iyer, Takashi Taniguchi, Kenji Watanabe, Peide D. Ye, and Xianfan Xu
Source: Advanced Functional Materials 2020, 30, 1905830(2020). PDF

Gate-tunable strong spin-orbit interaction in two-dimensional tellurium probed by weak antilocalization
Author(s): Chang Niu, Gang Qiu, Yixiu Wang, Zhuocheng Zhang, Mengwei Si, Wenzhuo Wu, Peide D. Ye
Source: Physical Review B 101, 2054414 (2020). PDF

A Tunable Ferroelectric Based Unreleased Radio Frequency (RF) Resonator
Author(s): Yanbo He, Bichoy Bahr, Mengwei Si, Peide D. Ye, Dana Weinstein
Source: Microsystems & Nanoengineering (NPG),2020,6:8. PDF

Single Pulse Charge Pumping Measurements on GaN MOS-HEMT: Fast and Reliable Extraction of Interface Traps Density
Author(s): Sami Alghamdi, Mengwei Si, Hagyoul Bae, Hong Zhou, and Peide D. Ye
Source: IEEE Transaction on Electron Devices, Vol. 67, No. 2, 444-448, 2020. PDF

Raman Response and Transport Property of Tellurium Atomic Chains Encapsulated in Nanotubes
Author(s): Jing-Kai Qin, Pai-Ying Liao, Mengwei Si, Shiyuan Gao, Gang Qiu, Jie Jian, Qingxiao Wang, Si-Qi Zhang, Shouyuan Huang, Adam Charnas, Yixiu Wang, Moon J. Kim, Wenzhuo Wu, Xianfan Xu, Hai-Yan Wang, Li Yang, Yoke Khin Yap, Peide D. Ye
Source: Nature Electronics 2020, 10.1038/s41928-020-0365-4. PDF Supplement

2019 

Energy Transport by Radiation in Hyperbolic Material Comparable to Conduction
Author(s): Hakan Salihoglu, Vasudevan Iyer, Tahashi Taniguchi, Kenji Watanabe, Peide D. Ye, Xianfan Xu
Source: Advanced Functional Materials 2019 1905830. PDF

A Ferroelectric Semiconductor Field-Effect Transistor
Author(s): Mengwei Si, Atanu K. Saha, Shengjie Gao, Gang Qiu, Jingkai Qin, Yuqin Duan, Jie Jian, Chang Niu, Haiyan Wang, Wenzhuo Wu, Sumeet K. Gupta, Peide D. Ye
Source: Nature Electronics 2, 580-586, 2019. doi.org/10.1038/s41928-019-03387 PDF; Supplementary Information

A Novel Scalable Energy-Efficient Synaptic Device: Crossbar Ferroelectric Semiconductor Junction
Author(s): M. Si, Y. Luo, W. Chung, H. Bae, D. Zheng, J. Li, J. Qin, G. Qiu, S. Yu, P. D. Ye
Source: 2019 International Electron Devices Meeting (IEDM): December 7-11, 2019. pp. 130-133. PDF

First Direct Measurement of Sub-Nanosecond Polarization Switching in Ferroelectric Hafnium Zirconium Oxide
Author(s): X. Lyu, M. Si, P.R. Shrestha, K.P. Cheung, P. D. Ye
Source: 2019 International Electron Devices Meeting (IEDM): December 7-11, 2019. pp. 342-345. PDF

Solar-blind UV photodetector based on atomic layer deposited Cu2O and nano-membrane ß-Ga2O3 pn oxide heterojunction
Author(s): Hagyoul Bae, Adam R. Charnas, Xing Sun, Jinhyun Noh, Mengwei Si†, Wonil Chung, Gang Qiu, Xiao Lyu, Sami Alghamdi, Haiyan Wang, Dmitry Zemlyanov, Peide D. Ye
Source: ACS Omega 2019, 4, 20756-20761. PDF

Anisotropic thermal conductivity in two-dimensional tellurium
Author(s): Shouyan Huang, Mauricio Segovia, Xiaolong Yang, Yee Rui Koh, Yixiu Wang, Peide D. Ye, Wenzhuo Wu, Ali Shakouri, Xuilin Ruan, Xianfan Xu
Source: 2D Materials 7 (2019) 015008. PDF

Electrothermal performance limits of b-Ga2O3
Author(s): Bikram K. Mahajan, Yen-Pu Chen, Jinhyun Noh, Peide D. Ye, Muhammad A. Alam
Source: Applied Physics Letters 115 (2019) 173508. PDF

Infrared ultrafast spectroscopy of solution-grown thin film tellurium
Author(s): Vasudevan Iyer, Mauricio Segovia, Yixiu Wang, Wenzhuo Wu, Peide D. Ye, and Xianfan Xu
Source: Physical Review B 100, 075436 (2019). PDF

Nanoscale electronic devices based on transition metal dichalcogenides
Author(s): Wenjuan Zhu, Tony Low, Han Wang, Peide D. Ye, and Xiangfeng Duan
Source: 2D Materials 6 (2019) 032004 PDF

On the Ferroelectric Polarization Switching of Hafnium Zirconium Oxide in Ferroelectric/Dielectric Stack
Author(s): Mengwei Si, Xiao Lyu, Peide D. Ye
Source: ACS Applied Electronic Materials 2019, 1, 745-751 PDF;Supplement

A Critical Review of Recent Progress on Negative Capacitance Field-Effect Transistors
Author(s): Muhammad A. Alam, Mengwei Si, Peide D. Ye
Source: Applied Physics Letters 114 (2019) 090401. PDF; Supplement Material

Thermoelectric Performance of 2D Tellurium with Accumulation Contacts
Author(s): Gang Qiu, Shouyuan Huang, Mauricio Segovia, Prabhu Venuthurumilli, Wenzhuo Wu, Xianfan Xu, Peide D. Ye
Source: Nano Letters 19 (2019) 1955-1962. PDF

Imaging Carrier Inhomogeneities in Ambipolar Tellurene Field Effect Transistors
Author(s): Samuel Berweger, Gang Qiu, Yixiu Wang, Benjamin Pollard, Kristen L. Genter, Robert Tyrell-Ead, T. Mitch Wallis, Wenzhuo Wu, Peide D. Ye, Pavel Kabos
Source: Nano Letters 19 (2019) 1289-1294. PDF

Hybrid dual-channel phototransistors based on 1D t-Se and 2D ReS2 mixed-dimensional heterostructures
Author(s): Jing-Kai Qin, Qiu Gang, Wen He, Jie Jian, Meng-Wei Si, Yu-Qiu Duan, Hai-Yan Wang, Wen-Zhu Shao, Liang Zhen, Cheng-Yan Xu, Peide D. Ye
Source: Nano Research 12 (3), 669-674 (2019) doi.org/10.1007/s12274-019-2275-1. PDF

Data-driven and probabilistic learning of the process-structure-property relationship in solution-grown tellurene for optimized nanomanufacturing of high-performance nanoelectronics
Author(s): Yixiu Wang, Raquel de Souza Borges Ferreira, Ruoxing Wang, Gang Qiu, Gaoda Li, Yong Qin, Peide D. Ye, Arman Sabbaghi, Wenzhuo Wu
Source: Nano Energy 57 (2019) 480-491. PDF

2018 

First Demonstration of Ge Ferroelectric Nanowire FET as Synaptic Device for Online Learning in Neural Network with High Number of Conductance State and Gmax/Gmin
Author(s): Wonil Chung, Mengwei Si, and Peide D. Ye
Source: 2018 International Electron Devices Meeting (IEDM): December 1-5, 2018. pp. 344-347. PDF

Experimental analysis of the Schottky barrier height of metal contacts in black phosphorus field-effect transistors
Author(s): Hsun-Ming Chang, Kai-Lin Fan, Adam Charnas, Peide D. Ye, Yu-Ming Lin, Chih-I Wu, and Chao-Hsin Wu
Source: J. Phys. D: Appl. Phys. 51 (2018) 135306 PDF

Low Frequency Noise in MoS2 Negative Capacitance Field-effect Transistor
Author(s): Sami Alghamdi, Mengwei Si, Heng Wu, Lingming Yang, Peide D. Ye
Source: 2018 IEEE International Reliability Physics Symposium (IRPS), P-TX.1-1, 2018 PDF

Carrier Mobility Enhancemnet by Applying Back-Gate Bias in Ge-on-Insulator MOSFETs
Author(s): Wangran Wu, Heng Wu, Jingyun Zhang, Mengwei Si, Yi Zhao, and  Peide D. Ye
Source: IEEE Electron Devices Letters, Vol. 39, No. 2, 176-179, 2018. PDF 

Sub-60 mV/dec Ferroelectric HZO MoS2 Negative Capacitance Field-effect Transistor with Internal Metal Gate: the Role of Parasitic Capacitance
Author(s): M. Si, C. Jiang, C.-J. Su, Y.-T. Tang, L. Yang, W. Chung, M.A. Alam, P.D. Ye
Source: 2017 International Electron Devices Meeting (IEDM): December 4-6, 2017. pp. 573-576. PDF

Hysteresis-free Negative Capacitance Germanium CMOS FinFETs with Bi-directional Sub-60 mV/dec
Author(s): Wonil Chung, Mengwei Si, and Peide D. Ye
Source: 2017 International Electron Devices Meeting (IEDM): December 4-6, 2017. pp. 365-368. PDF

Total Ionizing Dose Responses of GaN-based HEMTs with Different Channel Thicknesses and MOSHEMTs with Epitaxial MgCaO as Gate Dielectric
Author(s): M. Bhuiyan, H. Zhou, X. Lou, R. Jiang, X. Gong, H. Gong, E. X. Zhang, R. G. Gordon, R. A. Reed, D. M. Fleetwood, P.D. Ye and T. P. Ma
Source: IEEE Transactions on Nuclear Science, vol. 65, No. 1, 46-52, 2018. PDF

Thermo-dynamic Studies of β-Ga2O3 Nano-membrane Field-effect Transistors on Sapphire Substrate
Author(s): : Hong Zhou, Kerry Maize, Jinhyun Noh, Ali Shakouri, Peide D.  Ye
Source: ACS Omega 2017, 2, 7723-7729. PDF

β-Ga2O3 Nano-membrane Negative Capacitance Field-effect Transistor with Steep Subthreshold Slope for Wide Bandgap Logic Applications
Author(s): : Mengwei Si, Lingming Yang, Hong Zhou, Peide D.  Ye
Source: ACS Omega 2017, 2, 7136-7140. PDF

Ultra-fast Laser Shock Induced Confined Metaphase Transformation for Direct Writing of Black Phosphorus Thin Films
Author(s): Gang Qiu, Qiong Nian, Maithilee Motlag, Shengyu Jin, Biwei Deng, Yexin Deng, Adam R. Charnas, Peide D. Ye, Gary J. Cheng
Source: Advanced Materials 2018, 1704405.PDF

Germanium-doped Metallic Ohmic Contacts in Black Phosphorus Field-Effect Transistors with Ultra-low-Contact Resistance
Author(s): Hsin-Ming Chang, Adam Charnas, Yu-Ming Lin, Peide D. Ye, Chih-I Wu, Chao-Hsin Wu
Source: Scientific Reports 2017, 7:16857. PDF

Full-field thermal imaging of quasiballistic crosstalk reduction in nanoscale devices
Author(s): Amirkoushyar Ziabari, P. Torres, Bjorn Vermeersch, Yi Xuan, Xavier Cartoixa, Alvar Torello, Je-Hyeong Bahk, Yeerui Koh1, Maryam Parsa, Peide D. Ye, F. Xavier Alvarez, Ali Shakouri
Source: Nature Communications 2018, 9, 255. PDF

Steep Slope Hysteresis-free Negative Capacitance MoS2 Transistors
Author(s): Mengwei Si, Chun-Jung Su, Chunsheng Jiang, Nathan J. Conrad, Hong Zhou, Kerry D. Maize, Gang Qiu, Chien-Ting Wu, Ali Shakouri, Mahammad A. Alam, Peide D. Ye
Source: Nature Nanotechnology 2017, DOI 10.1038. PDF

Controlled Growth of Large-Size 2D Selenium Nanosheet and Its Electronic and Optoelectronic Applications
Author(s): Jin-Kai Qiu, Gang Qiu, Jie Jian, Hong Zhou, Ling-Ming Yang, Adam R. Charnas, Dmitry Zemlyanov, Cheng-Yan Xu, Xianfan Xu, Wenzhuo Wu, Hai-Yan Wang, and  Peide D. Ye
Source: ACS Nano 2017, 11, 10222-10229. PDF

β-Ga2O3 on Insulator Field-effect Transistors with Drain Currents Exceeding 1.5 A/mm and Their Self-heating Effect
Author(s): Hong Zhou, Kerry Maize, Gang Qiu, Ali Shakouri and  Peide D. Ye
Source: Applied Physics Letters 111, 092102 (2017). PDF

How Important Is the Metal-Semiconductor Contact for Schottky Barrier Transistors: A Case Study on Few-Layer Black Phosphorus?
Author(s): : Lingming Yang, Adam Charnas, Gang Qiu, Yu-Ming Lin, Chun-Chieh Lu, Wilman Tsai, Qing Paduano, Michael Snure, Peide D.  Ye
Source: ACS Omega 2017, 2, 4173-4179. PDF

Enhancement-Mode AlGaN/GaN fin-MOSHEMTs on Si substrate with Atomic Layer Epitaxy MgCaO Gate Dielectric
Author(s): Hong Zhou, Xiabing Lou, Sang Bok Kim, Kelson D. Chabak, Roy G. Gordon and  Peide D. Ye
Source: IEEE Electron Devices Letters, Vol. 38, No. 9, 1294-1297, 2017. PDF

DC and RF Perfromance of AlGaN/GaN/SiC MOSHEMTs With Deep Sub-Micron T-Gates and Atomic Layer Epitaxy MgCaO as Gate Dielectric
Author(s): Hong Zhou, Xiabing Lou, Kartnn Sutherlin, Jarren Summers, Sang Bok Kim, Kelson D. Chabak, Roy G. Gordon and  Peide D. Ye
Source: IEEE Electron Devices Letters, Vol. 38, No. 10, 1409-1412, 2017. PDF

Experimental Demonstration of Electrically-Tunable Bandgap on 2D Black Phosphorus by Quantum Confined Stark Effect
Author(s): Lingming Yang, Yu-Ming Lin, Wilman Tsai, and Peide D. Ye
Source: Symposia on VLSI Technology and Circuits (VLSI 2017), T4-3, T48-49, 2017. PDF

1D van der Waals Material Tellurium: Raman Spectroscopy under Strain and Magneto-transport
Author(s): Yuchen Du, Gang Qiu, Yixiu Wang, Mengwei Si, Xianfan Xu, Wenzhuo Wu, Peide D. Ye
Source: Nano Letters, 2017, 17, 3965-3973. PDF

Mid-Infrared Ultrafast Carrier Dynamics in Thin Film Black Phosphorus
Author(s): Vasudevan Iyer, Peide D. Ye, Xianfan Xu
Source: 2D Materials 4 (2017) 021032. PDF

Reliable Passivation of Black Phosphorus by Thin Hybrid Coating
Author(s): S. Gamage, A. Fali, N. Aghamiri, L. Yang, P. D. Ye, Y. Abate
Source: Nanotechnology 28 (2017) 265201. PDF

High Resolution Thermal Imaging of Self Heating Breakdown in AlGaN/GaN MOSHEMTs
Author(s): Kerry Maize, Hong Zhou, Peide D. Ye, Ali Shakouri
Source: 2017 IEEE International Reliability Physics Symposium (IRPS), 2017 PDF

Anomalous Bias Temperature Instability on Accumulation-Mode Ge and III-V MOSFETs
Author(s): Mengwei Si, Heng Wu, SangHoon Shin, Wei Luo, Nathan J. Conrad, Wangran Wu, Jingyun Zhang, Muhammad A. Alam, Peide D. Ye
Source: 2017 IEEE International Reliability Physics Symposium (IRPS), 2017 PDF

Chemically exfoliating large sheets of phosphorene via choline chloride urea viscosity-tuning
Author(s): Amy Ng, Thomas Sutto, Bernard Matis, Yexin Deng, Peide D. Ye, Rhonda Stroud, Todd Brintlinger, Nabil Bassim
Source: Nanotechnology 28 (2017) 155601. PDF

Total Ionizing Dose (TID) Effects in GaAs MOSFETs with La-Based Epitaxial Gate Dielectrics
Author(s): Shufeng Ren, Maruf A. Bhuiyan, Jingyun Zhang, Xiabing Lou, Mengwei Si, Xing Gong, Rong Jiang, Kai Ni, Xin Wan, En Xia Zhang, Roy G. Gordon, Robert A. Reed, Daniel M. Fleetwood, Peide D. Ye, Tso-Ping Ma
Source: IEEE Transactions on Nuclear Science, vol. 64, no. 1, 164-169, 2017. PDF

Total Ionizing Dose (TID) Effects in Ultra-Thin Body Ge-on-Insulator (GOI) Junctionless CMOSFETs with Recessed Source/Drain and Channel
Author(s): Shufeng Ren, Maruf A. Bhuiyan, Heng Wu, Rong Jiang, Kai Ni, En Xia Zhang,Robert A. Reed, Daniel M. Fleetwood, Peide D. Ye, Tso-Ping Ma
Source: IEEE Transactions on Nuclear Science, vol. 64, no. 1, 176-180, 2017. PDF

Experimental Investigation of Ballistic Carrier Transport for Sub-100 nm Ge N-MOSFETs
Author(s): Ran Cheng, Longxiang Yin, Heng Wu, Xiao Yu, Yanyan Zhang, Wangran Wu, Bing Chen, Peide D. Ye, Xiaoyan Liu, Yi Zhao
Source: IEEE Electron Devices Letters, Vol. 38, No. 4, 434-437, 2017. PDF

Fin-width Effects on Characteristics of InGaAs-Based Vertical Independent Double-Gate Transistor
Author(s): Sung-Jae Chang, Hong Zhou, Nanbo Gong, Dong-Min Kang, Jong-Won Lim, Mengwei Si, Peide D. Ye, T.P. Ma
Source: IEEE Electron Devices Letters, Vol. 38, No. 4, 441-444, 2017. PDF

High Performance Depletion/Enhancement-Mode β-Ga2O3 on Insulator (GOOI) Field-effect Transistors with Record Drain Currents of 600/450 mA/mm
Author(s): Hong Zhou, Mengwei Si, Sami Alghmadi, Gang Qiu, Lingming Yang and  Peide D. Ye
Source: IEEE Electron Devices Letters, Vol. 38, No.1, 103-106, 2017. PDF

2016

Switching Channels
Author(s): Peide D. Ye
Source: IEEE Spectrum, December 2016, 41-45. PDF

Few-Layer Black Phosphorus PMOSFETs with BN/Al2O3 Bilayer Gate Dielectric: Achieving Ion=850uA/um,gm=340uS/um and Rc=0.58kOhm.um
Author(s): L.M. Yang, G. Qiu, M.W. Si, A.R. Charnas, C.A. Milligan, D.Y. Zemlyanov, H. Zhou, Y.C. Du, Y.M. Lin, W. Tsai, Qing Paduano, M. Snure, P.D. Ye
Source: 2016 International Electron Devices Meeting (IEDM): December 4-7, 2016. pp. 127-130. PDF

Substrate and Layout Engineering to Suppress Self-heating in Floating Body Transistors
Author(s): S.H. Shin, S.-H. Kim, S. Kim, H. Wu, P.D. Ye, and M.A. Alam
Source: 2016 International Electron Devices Meeting (IEDM): December 4-7, 2016. pp. 404-407. PDF

Band Offsets and trap-related electron transistions at interfaces of (100) InAs with atomic-layer deposited Al2O3
Author(s): H.-Y. Chou, E. O'Connor, A. O'Mahony, I.M. Povey, P.K. Hurley, Lin Dong, Peide D. Ye, V.V. Afanasev, M. Houssa, and A. Stesmans
Source: Journal of Applied Physics, 120, 235701, 2016. PDF

Epitaxial Growth of MgCaO on GaN by Atomic Layer Deposition
Author(s): Xiabing Lou, Hong Zhou, Sang Bok Kim, Sami Alghamdi, Xian Gong, Jun Feng, Peide D. Ye, Roy G. Gordon
Source: Nano Letters 2016, 16, 7650-7654. PDF

Observation of Optical and Electrical In-plane Anisotropy in High-mobility Few-layer ZrTe5
Author(s): Gang Qiu, Yuchen Du, Adam Charnas, Hong Zhou, Shengyu Jin, Zhe Luo, Dmitry Zemlyanov, Xianfan Xu, Gary Cheng, Peide D. Ye
Source: Nano Letters 2016, 16, 7364-7369. DOI:10.1021/acs.nanolett.6b02629 PDF

Auxetic Black Phosphorus: A 2D Material with Negative Poisson's Ratio
Author(s): Yuchen Du, Jesse Maassen, Wangran Wu, Zhe Luo, Xianfan Xu, Peide D. Ye
Source: Nano Letters 2016, 16, 6701-6708. PDF

Surface Chemistry of Black Phosphorus Under Controlled Oxidative Environment
Author(s): Wei Luo, Dmitry Zemlyanov, Cory Milligan, Yuchen Du, Lingming Yang, Yanqing Wu, Peide D. Ye
Source: Nanotechnology 27 (2016) 434002. PDF

Improved Al2O3/β-Ga2O3 (-201) Interface Through Piranha Pretreatment and Post Deposition Annealing
Author(s): Hong Zhou, Sami Alghmadi, Gang Qiu, Mengwei Si and  Peide D. Ye
Source: IEEE Electron Devices Letters, Vol. 37, No. 11, 1411-1414, 2016. PDF

RTN and low Frequency Noise on Ultra-scaled Near-ballistic Ge Nanowire nMOSFETs
Author(s): Wangran Wu, Heng Wu, Mengwei Si, Nathan Conrad, Yi Zhao, and P.D. Ye
Source: Symposia on VLSI Technology and Circuits (VLSI 2016), T16.1, p. 170-171, 2016. PDF

Demonstration of Ge Nanowire CMOS Devices and Circuits for Ultimate Scaling
Author(s): Heng Wu, Wangran, Mengwei Si and  Peide D. Ye
Source: IEEE Transactions on Electron Devices, Vol. 63, No. 8, 3049-3057, 2016. PDF

Ge nMOSFETs: Performance and Variability Dependences on Operation Mode and Geometry
Author(s): Heng Wu, Gang Qiu, Wangran Wu and  Peide D. Ye
Source: IEEE Electron Devices Letters, Vol. xx, No. xx, xxx-xxx, 2016.

Fully-Depleted Ge CMOS Devices and Logic Circuilts on Si
Author(s): Heng Wu and  Peide D. Ye
Source: IEEE Transactions on Electron Devices, Vol. 63, No. 8, 3028-3033, 2016. PDF

0.1-um InAlN/GaN High Electron-Mobility Transistors for Power Amplifiers Operating at 71-76 and 81-86 GHz: Impact of Passivation and Gate Recess
Author(s): Dong Xu, K.K. Chu, J. Diaz, M. Ashamn, J. Komiak, L. Pleasant, A. Vera, P. Seekell, X. Yang, C. Creamer, K. Nichols, K.H.G. Duh, P.M. Smith, P.C. Chao, L. Dong, Peide D. Ye
Source: IEEE Transactions on Electron Devices, Vol. 63, No. 8, 3076-3083, August 2016. PDF

Transport studies in two dimension transition metal dichalcogenides and black phosphorus (Review)
Author(s): Yuchen Du, Adam Neal, Hong Zhou, Peide D. Ye
Source: Journal of Physics: Condensed Matter 28 (2016) 263002 PDF

Ionic Liquid Gating on Atomic Layer Deposition Passivated GaN: Ultra-high Electron Density Induced High Drain Current and Low Contact Resistance
Author(s): Hong Zhou, Yuchen Du, Peide D. Ye
Source: Applied Physics Letters 108, 202102 (2016) PDF

Contacts between Two- and Three- Dimensional Materials:Ohmic, Schottky, and p-n Heterojunctions
Author(s): Yang Xu, Cheng Cheng, Sichao Du, Jianyi Yang, Bin Yu, Jack Luo, Wenyan Yin, Erping Li, Shurong Dong, Peide D. Ye, Xiangfeng Duan
Source: ACS Nano, 10, 4895-4919 (2016) PDF

Mechanisms of Current Fluctuation in Ambipolar Black Phosphorus Field-Effect Transistors
Author(s): Xuefei Li, Yuchen Du, Mengwei Si, Lingming Yang, Shichao Li, Tiaoyang Li, Xiong Xiong, Peide D. Ye, Yanqing Wu
Source: Nanoscale 2016, 8, 3572-3578. PDF

Performance Enhancement of Black Phosphorus Field-Effect Transistors by Chemical Doping
Author(s): Yuchen Du, Lingming Yang, Hong Zhou, and  Peide D. Ye
Source: IEEE Electron Devices Letters, Vol. 37, No. 4, 429-432, 2016. PDF

High Performance InAlN/GaN MOSHEMTs Enabled by Atomic Layer Epitaxy MgCaO as Gate Dielectric
Author(s): Hong Zhou, Xiabing Lou, Nathan J. Conrad, Mengwei Si, Heng Wu, Sami Alghamdi, Shiping Guo, Roy G. Gordon, and Peide D. Ye
Source: IEEE Electron Devices Letters, Vol. 37, No. 5, 556-559, 2016. PDF

Weak Localization in Few-Layer Black Phosphorus
Author(s): Yuchen Du, Adam T. Neal, Hong Zhou and Peide D. Ye
Source: 2D Materials 3, 024003, 2016. PDF

2015

First Demonstration of Ge Nanowire CMOS Circuits: Lowest SS of 64 mV/dec, Highest gmax of 1057 µS/µm in Ge nFETs and Highest Maximum Voltage Gain of 54 V/V in Ge CMOS inverters
Author(s): Heng Wu, Wangran Wu, Mengwei Si, and  Peide D. Ye
Source: 2015 International Electron Devices Meeting (IEDM): December 15-17, 2015. PDF

InGaAs 3D MOSFETs with Drastically Different Shapes Formed by Anisotropic Wet Etching
Author(s): J. Zhang, M. Si, X.B. Lou, W. Wu, R.G. Gordon, and P.D. Ye
Source: 2015 International Electron Devices Meeting (IEDM): December 15-17, 2015. PDF

Large, tunable magnetoresistance in non-magnetic III-V nanowires
Author(s): Shichao Li, Wei Luo, Jiangjiang Gu, Xiang Cheng, Peide D. Ye, Yanqing Wu
Source: Nano Letters 2015, 15, 8026-8031 (DOI: 10.1021/acs.nanolett5b03366) PDF

Charge Collection Mechanism on GaAs MOSFETs
Author(s): Kai Ni, En Xia Zhang, Issak K. Samsel, Ronald D. Schrimpf, Robert A. Reed, Daniel M. Fleetwood, Andrew L. Sternberg, Michael W. McCurdy, Shufeng REn, Tso-Ping Ma, Ling Dong, Jingyun Zhang, and Peide D. Ye
Source: IEEE Transactions on Nuclear Science, vol. 62, no. 6, 2752-2759, 2015. PDF

Total Ionizing Dose (TID) Effects in Extremely Scaled Ultrathin Channel Nanowire (NW) Gate-all-around (GAA) InGaAs MOSFETs
Author(s): Shufeng Ren, Mengwei Si, Kai Ni, Xin Wan, Jin Chen, Sungjae Chang, Xiao Sun, En Xia Zhnag, Robert A. Reed, Daniel M. Fleetwood, Peide D. Ye, Sharon Cui, and T.P. Ma
Source: IEEE Transactions on Nuclear Science, vol. 62, no. 6, 2888-2893, 2015. PDF

Anisotropic in-plane thermal conductivity observed in few-layer black phosphorus
Author(s): Zhe Luo, Jesse Maassen, Yexin Deng, Yuchen Du, Richard Garrelts, Mark S. Lundstrom, Peide D. Ye, and Xianfan Xu
Source: Nature Communications 2015 DOI:10.1038/ncomms9572 PDF

Surface and interface study of half cycle atomic layer deposited Al2O3 on black phosphorus
Author(s): Hui Zhu, Xiaoye Qin, Angelica Azcatl, Rafik Addou, Stephen McDonnel, Peide D. Ye, and Robert M. Wallace
Source: Microelectronic Engineering 147, 1-4, 2015. PDF

Nanomanufacturing of 2D Transition Metal Dichalcogenide Materials Using Self-Assembled DNA Nanotubes
Author(s): Jungwook Choi, Haorong Chen, Feiran Li, Lingming Yang, Steve S. Kim, Rajesh R. Naik, Peide D. Ye, and Jong Hyun Choi
Source: Small 2015, DOI:10.1002/smll.201501431 PDF

Al2O3 on Black Phosphorus by Atomic Layer Deposition: An in Situ Interface Study
Author(s): Hui Zhu, Stephen McDonnel, Xiaoye Qin, Angelica Azcatl, Lanxia Cheng, Rafik Addou, Jiyoung Kim, Peide D. Ye, and Robert M. Wallace
Source: ACS Applied Materials and Interface, 2015. PDF

Direct Observation of Self-heating in III-V Gate-all-around Nanowire MOSFETs
Author(s): SangHoon Shin, Muhammand Abdul Wahab, Muhammad Masuduzzaman, Kerry Maize, Jiangjiang Gu, Mengwei Si, Ali Shakouri, Peide D. Ye, Muhammad Ashraful Alam
Source: IEEE Transactions on Electronic Devices, Vol. 62, No. 11, 3516-3523, 2015. PDF

Low Frequency Noise and Random Telegraph Noise on Near-Ballistic III-V MOSFETs
Author(s): Mengwei Si, Nathan J. Conrad, SangHong Shin, Jiangjiang Gu, Jingyun Zhang, Muhammand Asharful Alam, and Peide D. Ye
Source: IEEE Transactions on Electronic Devices, Vol. 62, No. 11, 3516-3523, 2015. PDF

Characterization and Reliability of III-V Gate-all-around MOSFETs (invited)
Author(s): Mengwei Si SangHoon Shin, Nathan J. Conrad, Jiangjiang Gu, Jingyun Zhang, Muhammad A. Alam, Peide D. Ye
Source: 2015 IEEE International Reliability Physics Symposium (IRPS), 4A01, 2015. PDF

Germanium nMOSFETs with Recessed Channel and S/D: Contact, Scalability, Interface and Drain Current Exceeding 1A/mm
Author(s): Heng Wu, Mengwei Si, Lin Dong, Jiangjiang Gu, Jingyun Zhang and Peide D. Ye
Source: IEEE Transactions on Electronic Devices, Vol. 62, No. 5, 1419-1426, May 2015. PDF

First Experimental Demonstration of Ge 3D FinFET CMOS Circuits
Author(s): Heng Wu, Wei Luo, Hong Zhou, Mengwei Si, Jingyun Zhang and P.D. Ye
Source: Symposia on VLSI Technology and Circuits (VLSI 2015), 2015. PDF

0.1-um Atomic Layer Deposition Al₂O₃ Passivated InAlN/GaN High Electron-Mobility Transistors for E-Band Power Amplifier
Author(s): Dong Xu, K.K. Chu, J. Diaz, M. Ashamn, J. Komiak, L. Pleasant, C. Creamer, K. Nichols, K.H.G. Duh, P.M. Smith, P.C. Chao, L. Dong, Peide D. Ye
Source: IEEE Electron Devices Letters, Vol. 36, No. 5, 442-444, May 2015. PDF

Inversion-mode GaAs wave-shaped field-effect transistor on GaAs (100) substrate
Author(s): Jingyun Zhang, Xiabing Lou, Mengwei Si, Heng Wu, Jiayi Shao, Michael J. Manfra, Roy G. Gordon and Peide D. Ye
Source: APPLIED PHYSICS LETTERS 106 (7): Art. No. 073506, February 20, 2015.PDF

Performance Potential and Limit of MoS2 Transistors
Author(s): Xuefei Li, Lingming Yang, Mengwei Si, Sichao Li, Mingqiang Huang, P.D. Ye, and Yanqing Wu
Source: Advanced Materials 2015 DOI:10.1002/adma.201405068 PDF

Laser Direct Synthesis of Silicon Nanowire Field Effect Transistors
Author(s): Woongsik Nam, James I. Mitchell, Peide D. Ye, and Xianfan Xu
Source: Nanotechnology Vol. 26, 055306, 2015. PDF

2014

First Experimental Demonstration of Ge CMOS Circuits
Author(s): Heng Wu, Nathan Conrad, Wei Luo, and  Peide D. Ye
Source: 2014 International Electron Devices Meeting (IEDM): December 15-17, 2014. PDF

Deep Sub-100nm Ge CMOS Devices on Si with the Recessed S/D and Channel
Author(s): Heng Wu, Wei Lu, Mengwei Si, Jingyun Zhang, Hong Zhou, and  Peide D. Ye
Source: 2014 International Electron Devices Meeting (IEDM): December 15-17, 2014. PDF

Low-Frequency Noise and RTN on Near-Ballistic III-V GAA Nanowire MOSFETs
Author(s): N. Conrad, M. Si, S.H. Shin, J.J. Gu, J. Zhang, M.A. Alam and P.D. Ye
Source: 2014 International Electron Devices Meeting (IEDM): December 15-17, 2014. PDF

Direct Observation of Self-heating in III-V Gate-all-around Nanowire MOSFETs
Author(s): S.H. Shin, M. Masuduzzaman, M.A. Wahab, J.J. Gu, M. Si, P.D. Ye, and M.A. Alam
Source: 2014 International Electron Devices Meeting (IEDM): December 15-17, 2014. PDF

Towards High-Performance Two-Dimensional Black Phosphorus Optoelectronic Devices: the Role of Metal Contacts
Author(s): Yexin Deng, Nathan J. Conrad, Zhe Luo, Han Liu, Xianfan Xu, and Peide D. Ye
Source: 2014 International Electron Devices Meeting (IEDM): December 15-17, 2014. PDF

Chloride Molecular Doping Technique on 2D Materials: WS₂ and MoS₂
Author(s): Lingming Yang, Kausik Majumdar, Han Liu, Yuchen Du, Heng Wu, Michael Hatzistergos, P.Y. Hung, Robert Tieckelmann, Wilman Tsai, Chris Hobbs, Peide D. Ye
Source: Nano Letters 2014, 14, 6275. PDF

Temporal and Thermal Stability of Al₂O₃-passivated Phosphorene MOSFETs
Author(s): Xi Luo, Yaghoob Rahbarihagh, James C.M. Hwang, Han Liu, Yuchen Du, and Peide D. Ye
Source: IEEE Electron Devices Letters 35 (10) 2014. PDF

Semiconducting Black Phosphorus: Synthesis, Transport Properties and Electronic Applications
Author(s): Han Liu, Yuchen Du, Yexin Deng, and Peide D. Ye
Source: Chemical Society Review 2014, DOI:10.1039/c4cs00257a PDF (cite this: Chem. Soc. Rev., 2015, 44, 2732)

Device Perspective for Black Phosphorus Field-Effect Transistors: Contact Resistance, Ambipolar Behavior, and Scaling
Author(s): Yuchen Du, Han Liu, Yexin Deng, and Peide D. Ye
Source: ACS Nano Vol.8, No.10, 10035-10042, 2014. PDF

Contact research strategy for emerging molybdenum disulfide and other two-dimensional field-effect transistors
Author(s): Yuchen Du, Lingming Yang, Han Liu, and Peide D. Ye
Source: APL Materials 2, 092510, 2104. PDF

Two-Dimensional TaSe2 Metallic Crystals: Spin-Orbit Scattering Length and Breakdown Current Density
Author(s): Adam T. Neal, Yuchen Du, Han Liu, and Peide D. Ye
Source: ACS Nano Vol.8, No.9, 9137-9142, 2014. PDF

Black Phosphorus-Monolayer MoS2 van der Waals Heterojunction p-n Diode
Author(s): Yexin Deng, Zhe Luo, Nathan J. Conrad, Han Liu, Yongji Gong, Sina Najmaei, Pulickel M. Ajayan, Jun Lou, Xianfan Xu and Peide D. Ye
Source: ACS Nano Vol. 8, No. 8, 8292-8299, 2014.  PDF  July 14, 2014 DOI:10.1021/nn5027388

The Effect of Dielectric Capping on Few-Layer Phosphorene Transistors: Tuning the Schottky Barrier Heights
Author(s): Han Liu, Adam T. Neal, Mengwei Si, Yuchen Du, and P.D. Ye
Source: IEEE Electron Devices Letters 35 (7): DOI 10.1109/LED.2014.2323951 2014.  PDF

Theoretical Study on the Oxidation Mechanism and Dynamics of Zigzag Graphene Nanoribbon Edge by Oxygen and Ozone
Author(s): Kun Xu and Peide D. Ye
Source: The Journal of Physical Chemistry C 2014, 118, 10400-10407. PDF

Measurement of In-Plane Thermal Conductivity of Ultrathin Films using Micro-Raman Spectroscopy
Author(s): Zhe Luo, Han Liu, Bryan T. Spann, Yanhui Feng, Peide D. Ye, Yong P. Chen, and Xianfan Xu
Source: Nanoscale and Microscale Thermophysical Engineering, 18: 183-193, 2014. PDF

Electron Spin Magnetism of Zigzag Graphene Nanoribbon Edge States
Author(s): Kun Xu and Peide D. Ye
Source: APPLIED PHYSICS LETTERS 104, 163104 (2014). PDF

Electronic Transport in InGaAs/Al₂O₃ nFinFETs
Author(s): Shengwei Li, Yaodong Hu, Yanqing Wu, Daming Huang, Peide D. Ye, and Ming-Fu Li
Source: Semiconductor Science and Technology 29, 075014, 2014. PDF

Origin and Implications of Hot Carrier Degradation of Gate-all-around Nanowire III-V MOSFETs
Author(s): SangHoon Shin, M.A. Wahab, M. Masuduzzaman, Mengwei Si, J.J. Gu, P.D. Ye, and M.A. Alam
Source: 2014 IEEE International Reliability Physics Symposium (IRPS) 4A.3.1 PDF

(Late News) High-Performance MoS₂ Field-Effect Transistors Enabled by Chloride Doping: Record Low Contact Resistance (0.5kWum) and Record High Drain Current (460 uA/um)
Author(s): L.M. Yang, K. Majumdar, Y.C. Du, H. Liu, H. Wu, M. Hatzistergos, P.Y. Hung, R. Tiekelmann, W. Tsai, C. Hobbs, P.D. Ye
Source: Symposia on VLSI Technology and Circuits (VLSI 2014), pp.192-193, 2014. PDF

Ge CMOS Technology: Breakthroughs of nFETs (I_max=714 mA/mm, g_max=590mS/mm) by recessed channel and S/D
Author(s): H. Wu, M.W. Si, L. Dong, J.Y. Zhang, and P.D. Ye
Source: Symposia on VLSI Technology and Circuits (VLSI 2014), pp.76-77, 2014. PDF

III-V CMOS Devices and Circuits with High-Quality Atomic-Layer-Epitaxial La₂O₃/GaAs Interface
Author(s): L. Dong, X.W. Wang, J.Y. Zhang, X.F. Li, X.B. Lou, N. Conrad, H. Wu, R.G. Gordon, and P.D. Ye
Source: Symposia on VLSI Technology and Circuits (VLSI 2014), pp.50-51, 2014. PDF

MoS₂ Field-Effect Transistors With Graphene/Metal Heterocontacts
Author(s): Yuchen Du, Lingming Yang, Jingyun Zhang, Han Liu, Kausik Majumdar, Paul D. Kirsch, and P.D. Ye
Source: IEEE Electron Devices Letters 35 (5): 599-601, 2014 PDF

Phosphorene: An unexplored 2D Semiconductor with a High Hole Mobility
Author(s): Han Liu, Adam T. Neal, Zhen Zhu, Zhe Luo, Xianfan Xu, David Tomanek, and Peide D. Ye
Source: ACS Nano Vol. 8, No. 4, 4033-4041, 2014. DOI: 10.1021/nn501226z PDF

2013

Switching Mechanism in Single-Layer Molybdenum Disulfide Transistors: an Insight into Current Flow across Schottky Barriers
Author(s): Han Liu, Mengwei Si, Yexin Deng, Adam T. Neal, Yuchen Du, Sina Najmaei, Pulickel M. Ajayan, Jun Lou and Peide D. Ye
Source: ACS Nano Vol.8, No. 1, 1031-1038, 2014. DOI: 10.1021/nl400778q PDF

Impact of Nanowire Variability on Peformance and Reliability of Gate-all-around III-V MOSFETs
Author(s): S.H. Shin, M. Masuduzzaman, J.J. Gu, M.A. Wahab, N. Conrad, M. Si, P.D. Ye, and M.A. Alam
Source: 2013 International Electron Devices Meeting (IEDM): Page 188-191, December 9-11, 2013. PDF

Fundamentals in MoS₂ Transistors: Dielectric, Scaling and Metal Contacts
Author(s): H. Liu, A.T. Neal, Y. Du, P. D. Ye
Source: ECS Transactions, vol. 58, no.7, pp 203-208, October 2013. PDF

Performance and Variability Studies of InGaAs Gate-all-around Nanowire MOSFETs
Author(s): Nathan Conrad, SangHong Shin, Jiangjiang Gu, Mengwei SI, Heng Wu, Muhammad Masuduzzaman, Mohammad A. Alam, and Peide D. Ye
Source: IEEE Transactions on Devices and Materials Reliability, October 2013. PDF

Reliability of High Mobility InGaAs Channel n-MOSFETs udner BTI Stress
Author(s): Ming-Fu Li, Guangfan Jiao, Yaodong Hu,  Yi Xuan,  Daming Huang, and Peide D. Ye
Source: IEEE Transactions on Devices and Materials Reliability, October 2013. PDF

Extraction of Channel Electron Effective Mobility in InGaAs/Al₂O₃ n-FinFETs
Author(s): Yaodong Hu, Shengwei Li, Guangfan Jiao, Y.Q. Wu, Daming Huang, Peide D. Ye, and Ming-Fu Li
Source: IEEE Transactions on Nanotechnology 12 (5), 806, September 2013. PDF

Molecular Doping of Multilayer MoS₂ Field-Effect Transistors: Reduction in Sheet and Contact Resistances
Author(s): Yuchen Du, Han Liu, Adam T. Neal, Mengwei Si and P.D. Ye
Source: IEEE Electron Devices Letters 34 (8): PDF

Magneto-transport in MoS₂: Phase Coherence, Spin-Orbit Scattering, and the Hall Factor
Author(s): Adam T. Neal, Han Liu, Jiangjiang Gu and Peide D. Ye
Source: ACS Nano vol. 7, no. 8, 7077-7082, 2013 DOI:10.1021/nn402377g. PDF

Statistical Study of Deep Submicron Dual-Gated Field-Effect Transistors on Monolayer Chemical Vapor Deposition Molybdenum Disulfide Films
Author(s): Han Liu, Mengwei Si, Sina Najmaei, Adam T. Neal, Yuchen Du, Pulickel M. Ajayan, Jun Lou and Peide D. Ye
Source: Nano Letters DOI: 10.1021/nl400778q PDF

A Distributive-Transconductance Model for Border Traps in III-V/High-k MOS Capacitors
Author(s): Chen Zhang, Min Xu, Peide D. Ye, and Xiuling Li
Source: IEEE Electron Devices Letters 34 (6): 735-737 June 2013. PDF

0.2-um AlGaN/GaN High Electron-Mobility Transistors with Atomic Layer Deposition Al₂O₃ Passivation
Author(s): Dong Xu, K. Chu, J. Diaz, W. Zhu, R. Roy, L. Pleasant, K. Nichols, P.C. Chao, M. Xu, and Peide D. Ye
Source: IEEE Electron Devices Letters 34 (6): 744-746 June 2013. PDF

Variability Improvement by Interface Passivation and EOT Scaling of InGaAs Nanowire MOSFETs
Author(s): Jiangjiang J. Gu, Xinwei Wang, Heng Wu, Roy G. Gordon, and Peide D. Ye
Source: IEEE Electron Devices Letters 34 (5): pp. 608-610 May 2013. PDF

GaAs Enhancement-Mode NMOSFETs Enabled by Atomic Layer Epitaxial La1.8Y0.2O3 as Dielectric
Author(s): L. Dong, X.W. Wang, J.Y. Zhang, X.F. Li, R.G. Gordon, and P.D. Ye
Source: IEEE Electron Devices Letters 34 (4): pp 487-489  April 2013. PDF

Effects of forming gas anneal on ultrathin InGaAs nanowire metal-oxide-semiconductor field-effect transistors
Author(s): Mengwei Si, Jiangjiang J. Gu, Xinwei Wang, Jiayi Shao, Xuefei Li, Michael J. Manfra, Roy G. Gordon and Peide D. Ye
Source: APPLIED PHYSICS LETTERS 102 (9): Art. No. 093505, March 5, 2013. PDF

Laser direct synthesis of graphene on quartz
Author(s): Dapeng Wei, James I. Mitchell, Chookiat Tansarawiput, Woongsik Nam, Minghao Qi, Peide D. Ye, and Xianfan Xu
Source: Carbon 53 (2003) 374-379. PDF

Band offset determination of atomic-layer-deposited Al2O3 and HfO2 on InP by internal photoemission and spectroscopic ellipsometry
Author(s): K. Xu, H. Sio, O.A. Kirlillov, L. Dong, Min Xu, P.D. Ye, D. Gundlach, and N.V. Nguyen
Source: Journal of Applied Physics 113 (1): Art. No. 024504, January 9, 2013. PDF

New insights in the passivation of high-k/InP through interface characterization and metal-oxide-semiconductor field effect transistor demonstration: Impact of crystal orientation
Author(s): Min Xu, Jiangjiang Gu, Chen Wang, D.M. Zhernokletov, R.M. Wallace, and P.D. Ye
Source: Journal of Applied Physics 113 (1): Art. No. 013711, January 4, 2013. PDF

2012

Heteroepitaxy of La2O3 and La2-xYxO3 on GaAs (111)A by Atomic Layer Deposition: Achieving Low Interface Trap Density
Author(s): Xinwei Wang, Lin Dong, Jingyun Zhang, Yiqun Liu, Peide D. Ye, and Roy G. Gordon
Source: Nano Letters December 31 2012 DOI: 10.1021/nl3041349 PDF

Direct Measurement of Dirac Point Energy at the Graphene/Oxide Interface
Author(s): Kun Xu, Caifu Zheng, Qin Zhang, Rusen Yan, Peide D. Ye, Kang Wang, Alan C. Seabaugh, Huili Grace Xing, John S. Suehle, Curt A. Richter, Davide J. Gundlach, and N.V. Nguyen
Source: Nano Letters December 17 2012 DOI: 10.1021/nl303669w PDF

20-80nm Channel Length InGaAs Gate-all-around Nanowire MOSFETs with EOT=1.2nm and Lowest SS=63mV/dec
Author(s): J.J. Gu, X.W. Wang, H. Wu, J. Shao, A.T. Neal, M.J. Manfra, R.G. Gordon and P.D. Ye
Source: 2012 International Electron Devices Meeting (IEDM): Page 633-636, December 5-7, 2012. PDF

III-V Gate-all-around Nanowire MOSFET Process Technology: From 3D to 4D
Author(s): J.J. Gu, X.W. Wang, J. Shao, A.T. Neal, M.J. Manfra, R.G. Gordon and P.D. Ye
Source: 2012 International Electron Devices Meeting (IEDM): Page 529-532, December 5-7, 2012. PDF

Channel Length Scaling of MoS₂ MOSFETs
Author(s): Han Liu, Adam T. Neal and Peide D. Ye
Source: ACS Nano 6 (10): 8563-8569 September 07 2012. PDF

MoS₂ Nanoribbon Transistors: Transition from Depletion Mode to Enhancement Mode by Channel-Width Trimming
Author(s): Han Liu, JiangJiang Gu and Peide D. Ye
Source: IEEE Electron Devices Letters 33 (9): pp. 1273-1275, September 2012. PDF

Electron band alignment at the interface of (100)InSb with atomic-layer-deposited Al2O3
Author(s): H.Y. Chou, V.V. Afanas'ev, M. Houssa, A. Stesmans, Lin Dong, and P.D. Ye
Source: APPLIED PHYSICS LETTERS 101 (14): Art. No. 082114, August 24, 2012. PDF

Frequency response of LaAlO3/SrTiO3 all-oxide field-effect transistors
Author(s): Qingmin Liu, Lin Dong, Yiqun Liu, Roy Gordon, Peide D. Ye, Parrick Fay, and Alan Seabaugh
Source: Solid State Electronics, vol. 76, pp 1-4, July 2012. PDF

Size-Dependent-Transport Study of In0.53Ga0.47As Gate-All-Around Nanowire MOSFETs: Impact of Quantum Confinement and Volume Inversion
Author(s): Jiangjiang J. Gu, Heng Wu, Yiqun Liu, Adam T. Neal, Roy G. Gordon, and Peide D. Ye
Source: IEEE Electron Devices Letters 33 (7): Art. No. 967 July 2012. PDF

Experimental Investigation of Border Trap Generation in InGaAs nMOSFETs With Al2O3 Gate Dielectric Under PBTI Stress
Author(s): Guangfan Jiao, Chengjun Yao, Yi Xuan, Daming Huang, Peide D. Ye, and Ming-Fu Li
Source: IEEE Transactions on Electron Devices 59 (6), 1661, June 2012. PDF

Sub-100nm Non-planar 3D InGaAs MOSFETs: Fabrication and Characterization
Author(s): Jiangjiang J. Gu and Peide D. Ye
Source: ECS Transactions, vol. 45, no.4, pp 217-229, April 2012. PDF

Effects of Channel Hot Carrier Stress on III-V Bulk Planar MOSFETs (Late News)
Author(s): N. Wrachien, A. Cester, D. Bari, E. Zanoni, G. Meneghesso, Y.Q. Wu, and P.D. Ye
Source: 2012 IEEE International Reliability Physics Symposium (IRPS): Page 3D.4.1-4.7, April 15-19, 2012. PDF

The integration of high-k dielectric on two-dimensional crystals by atomic layer deposition
Author(s): Han Liu, Kun Xu, Xujie Zhang, and Peide D. Ye
Source: APPLIED PHYSICS LETTERS 100 (15): Art. No. 152115, April 13, 2012. PDF

Interface barriers at the interfaces of polar GaAs (111) faces with Al2O3
Author(s): H.Y. Chou, E. O'Connor, P.K. Hurley, V.V. Afanas'ev, M. Houssa, A. Stesmans, P.D. Ye, and S.B. Newcomb
Source: APPLIED PHYSICS LETTERS 100 (14): Art. No. 141602, April 2, 2012. PDF

MoS₂ Dual-Gate MOSFET with Atomic-Layer-Deposited Al₂O₃ as Top-Gate Dielectric
Author(s): Han Liu and Peide D. Ye
Source: IEEE Electron Devices Letters 33 (4): Art. No. 546 April 2012. PDF

Magneto-Transport on Epitaxial Graphene (Book Chapter)
Author(s): Peide D. Ye, Michael Capano, Tian Shen, Yanqing Wu, and Michael L. Bolen
Source: Graphene Nanoelectronics, pp. 161-188, Springer-Verlag Berlin Heidelberg 2012. PDF

GaSb Metal-Oxide-Semiconductor Capacitors with Atomic-Layer-Deposited HfAlO as Gate Dielectric
Author(s): Chen Wang, Min Xu, Jiangjiang Gu, David Wei Zhang, and Peide D. Ye
Source: Electrochemical and Solid-State Letters 15 (3) H51-54 (2012). PDF

"Zero" Drain-Current Drift of Inversion-Mode NMOSFET on InP (111)A Surface
Author(s): Chen Wang, Min Xu, Robert Colby, David Wei Zhang, and Peide D. Ye
Source: Electrochemical and Solid-State Letters 15 (2) H27-30 (2012). PDF

Quantum-Hall plateau-plateau transition in top-gated epitaxial graphene grown on SiC (0001)
Author(s): T. Shen, A.T. Neal, M.L. Bolen, J.J. Gu, L.W. Engel, M.A. Capano, and P.D. Ye
Source: Journal of Applied Physics 111 (1): Art. No. 013716, January 13, 2012. PDF

2011

First Experimental Demonstration of Gate-all-around III-V MOSFETs by Top-down Approach
Author(s): J.J. Gu, Y.Q. Liu, Y.Q. Wu, R. Colby, R.G. Gordon and P.D. Ye
Source: 2011 International Electron Devices Meeting (IEDM): Page 769-772, December 5-7, 2011. PDF

Positive Bias Temperature Instability Degradation of InGaAs n-MOSFETs with Al₂O₃ Gate Dielectric
Author(s): G.F. Jiao, W. Cao, Y. Xuan, D.M. Huang, P.D. Ye, and M.F. Li
Source: 2011 International Electron Devices Meeting (IEDM): Page 606-609, December 5-7, 2011. PDF

Effects of (NH4)2S passivation on the off-state performance of 3-dimensional InGaAs metal-oxide-semiconductor field-effect transistors
Author(s): J.J. Gu, A.T. Neal and P.D. Ye
Source: APPLIED PHYSICS LETTERS 99 (15): Art. No. 152113, October 14, 2011. PDF

III-V-on-nothing metal-oxide-semiconductor field-effect transistors enabled by top-down nanowire release process: Experiment and simulation
Author(s): J.J. Gu, O. Koybasi, Y.Q. Wu and P.D. Ye
Source: APPLIED PHYSICS LETTERS 99 (11): Art. No. 112113, September 15, 2011. PDF

Atomic-layer-deposited Al₂O₃ on Bi₂Te₃ for topological insulator field-effect transistors
Author(s): Han Liu and P.D. Ye
Source: APPLIED PHYSICS LETTERS 99 (5): Art. No. 052108, August 4, 2011. PDF

Schottky-barrier height modulation of metal/In_0.53Ga_0.47As interfaces by insertion of atomic-layer deposited ultrathin Al₂O₃
Author(s): Runsheng Wang, Min Xu, Peide D. Ye, Ru Huang
Source: J. Vac. Sci. Technol. B 29 (4), 041206, August 2, 2011. PDF

Interface chemistry of oxides on In_xGa_1-xAs and implications for MOSFET application (Review)
Author(s): C.L. Hinkle, E.M. Vogel, Peide D. Ye, R.M. Wallace
Source: Current Opinion in Solid State and Materials Science 15, 188-207, July 2011. PDF

Analysis of Electron Mobility in Inversion-Mode Al₂O₃/In_xGa_1-xAs MOSFETs
Author(s): Weike Wang, James C.M. Hwang, Yi Xuan, and Peide D. Ye
Source: IEEE Transactions on Electron Devices 58 (7), 1972, July 2011. PDF

GaSb Inversion-Mode PMOSFETs With Atomic-Layer-Deposited Al2O3 as Gate Dielectric
Author(s): Min Xu, Runsheng Wang, and Peide D. Ye
Source: IEEE Electron Devices Letters 32 (7): Art. No. 488 July 2011. PDF

Selective Contact Anneal Effects on Indium Oxide Nanowire Transistors using Femtosecond Laser
Author(s): Seongmin Kim, Sunkook Kim, Pornsak Srisungsitthisunti, Chunghun Lee, Min Xu, Peide D. Ye, Minghao Qi, Xianfan Xu, Chongwu Zhou, Sanghyun Ju, and David B. Janes
Source: Journal of Physical Chemistry C  115, 17147-17153, July 29, 2011. PDF

Effects of Positive and Negative Stresses on III-V MOSFETs with Al2O3 Gate Dielectric
Author(s): N. Wrachien, A. Cester, Y.Q. Wu, P.D. Ye, E. Zanoni, and G. Meneghesso
Source: IEEE Electron Devices Letters 32 (4): Art. No. 488 April 2011. PDF

Effects of gate-last and gate-first process on deep submicron inversion-mode InGaAs n-channel metal-oxide-semiconductor field effect transistors
Author(s): J.J. Gu, Y.Q. Wu and P.D. Ye
Source: JOURNAL OF APPLIED PHYSICS 109 (5): Art. No. 053709, 9 March 2011. PDF

2010

Atomic-layer-deposited LaAlO3/SrTiO3 all oxide field-effect transistors
Author(s): L. Dong, Y.Q. Liu, M. Xu, Y.Q. Wu, R. Colby, E.A. Stach, R. Droopad, R.G. Gordon and P.D. Ye
Source: 2010 International Electron Devices Meeting (IEDM): Page 588-591, December 6-8, 2010.PDF

Heteroepitaxy of single-crystal LaLuO₃ on GaAs (111)A by atomic layer deposition
Author(s): Y.Q. Liu, M. Xu, J. Heo, P.D. Ye, and R.G. Gordon
Source: APPLIED PHYSICS LETTERS 97 (16): Art. No. 162910, October 21, 2010. PDF

Atomic-Layer-Deposited High-k Dielectric Integration on Epitaxial Graphene
Author(s): P.D. Ye, A.T. Neal, T. Shen, J.J. Gu, M.L. Bolen, and M.A. Capano
Source: ECS Transactions, vol. 33, no.3, pp 459-466, October 2010. PDF

Empirical Study of Hall Bars on Few-Layer Graphene on C-Face 4H-SiC
Author(s): M.L. Bolen, T. Shen, J.J. Gu, R. Colby, E.A. Stach, P.D. Ye, and M.A. Capano
Source: Journal of ELECTRONIC MATERIALS DOI:10.1007/s11664-010-1375-1 September 14, 2010. PDF

High performance atomic-layer-deposited LaLuO₃/Ge-on-insulator p-channel metal-oxide-semiconductor field-effect transistor with thermally grown GeO₂ as interfacial passivation layer
Author(s): J.J. Gu, Y.Q. Liu, M. Xu, G.K. Celler, R.G. Gordon, and P.D. Ye
Source: APPLIED PHYSICS LETTERS 97 (1): Art. No. 012106, July 8, 2010. PDF

Theoretical Study of Atomic Layer Deposition Reaction Mechanism and Kinetics for Aluminum Oxide Formation at Graphene Nanoribbon Open Edges
Author(s): Kun Xu and Peide D. Ye
Source: Journal of Physical Chemistry C, vol. 114, no. 23, pp 10505-10511, May 25 2010. PDF

Atomic-Layer Deposited High-k/III-V Metal-Oxide-Semiconductor Devices and Correlated Empirical Model
Author(s): Peide D. Ye, Yi Xuan, Yanqing Wu, and Min Xu
Source: "Fundamentals of III-V Semiconductor MOSFETs", S. Oktyabrsky, P.D. Ye (eds.), Springer 2010, pp. 173-193. PDF

Degradation of III-V inversion-type enhancement-mode MOSFETs
Author(s): N. Wrachien, A. Cester, E. Zanoni, G. Meneghesso, Y.Q. Wu, and P.D. Ye
Source: 2010 IEEE International Reliability Physics Symposium (IRPS): Page 536-542, May 2-6, 2010. PDF

ALD High-k as a Common Gate Stack Solution for Nano-electronics
Author(s): P.D. Ye, J.J. Gu, Y.Q. Wu, M. Xu, Y. Xuan, T. Shen and A.T. Neal
Source: ECS Transactions, vol. 28, no.2, pp 51-68, April 2010. PDF

Scaling of InGaAs MOSFETs into deep-submicron
Author(s): Yanqing Wu and Peide D. Ye
Source: ECS Transactions, vol. 28, no.5, pp 185-201, April 2010. PDF

Charge-pumping characterization of interface traps in Al₂O₃/In_0.75Ga_0.25As metal-oxide-semiconductor field-effect transistors
Author(s): W. Wang, J. Deng, J.C.M. Hwang, Y. Xuan, Y. Wu, and P.D. Ye
Source: APPLIED PHYSICS LETTERS 96 (7): Art. No. 072102, February 16, 2010. PDF

Band offsets of Al₂O₃/In_xGa_1-xAs (x=0.53 and 0.75) and the effects of postdeposition annealing
Author(s): N.V. Nguyen, M. Xu, O.A. Kirillov, P.D. Ye, C. Wang, K. Cheung, and J.S. Suehle
Source: APPLIED PHYSICS LETTERS 96 (5): Art. No. 052107, February 2, 2010. PDF

2009

High Performance Deep-Submicron Inversion-Mode InGaAs MOSFETs with Maximum Gm exceeding 1.1 mS/um: New HBr Pretreatment and Channel Engineering
Author(s): Y.Q. Wu, M. Xu, R.S. Wang, O. Koybasi and P.D. Ye
Source: 2009 International Electron Devices Meeting (IEDM): Page 323-326, December 7-9, 2009. PDF

First Experimental Demonstration of 100 nm Inversion-mode InGaAs FinFET through Damage-free Sidewall Etching
Author(s): Y.Q. Wu, R.S. Wang, T. Shen, J.J. Gu and P.D. Ye
Source: 2009 International Electron Devices Meeting (IEDM): Page 331-334, December 7-9, 2009. PDF

New Insight into Fermi-level Unpinning on GaAs: Impact of Different Surface Orientations
Author(s): M. Xu, K. Xu, R. Contreras, M. Milojevic, T. Shen, O. Koybasi, Y.Q. Wu, R.M. Wallace and P.D. Ye
Source: 2009 International Electron Devices Meeting (IEDM): Page 865-868, December 7-9, 2009. PDF

Observation of quantum Hall effect in gated epitaxial graphene grown on SiC (0001)
Author(s): T. Shen, J.J. Gu, M. Xu, Y.Q. Wu, M.L. Bolen, M.A. Capano, L.W. Engel, and  P.D. Ye
Source: APPLIED PHYSICS LETTERS 95 (17): Art. No. 172105 October 28, 2009. PDF

0.8-V Supply Voltage Deep-Submicrometer Inversion-Mode In_0.75Ga_0.25As MOSFET
Author(s): Y.Q. Wu, W.K. Wang, O. Koybasi, D.N. Zakharov, E.A. Stach, S. Nakahara, J.C.M. Hwang and  P.D. Ye
Source: IEEE Electron Devices Letters 30 (7): Art. No. 700 July 2009. PDF

Metal-oxide-semiconductor field-effect transistors on GaAs (111)A surface with atomic-layer-deposited Al₂O₃ as gate dielectrics
Author(s): M. Xu, Y.Q. Wu, O. Koybasi, T. Shen, and  P.D. Ye
Source: APPLIED PHYSICS LETTERS 94 (21): Art. No. 212104 May 28, 2009. PDF

Anomalous triple junction surface pits in nanocrystalline zirconia thin films and their relationship to triple junction energy
Author(s): Hakkwan Kim, Yi Xuan, Peide D. Ye, Raghavan Narayanan, Alexander H. King
Source: Acta Materialia 57, 3662-3670 (2009). PDF

Inversion-mode In_xGa_1-xAs MOSFETs (x=0.53,0.65,0.75) with atomic-layer deposited high-k dielectrics
Author(s): P.D. Ye, Y. Xuan, Y.Q. Wu and M. Xu
Source: ECS Transactions, vol. 19, no.2, pp 605-614, May 2009. PDF 

Characterization of Parylene-N as Flexible Substrate and Passivation Layer for Microwave and Millimeter-Wave Integrated Circuits
Author(s): H. Sharifi, R.R. Lahiji, H.C. Lin, P.D. Ye, L. P.B. Katehi and  S. Mohammadi
Source: IEEE Transactions on Advanced Packaging, Vol.32, No.1, 84-92, 2009. PDF

Fully Transparent Thin-Film Transistors Based on Aligned Carbon Nanotube Arrays and Indium Tin Oxide Electrodes
Author(s): S. Kim, S. Ju, H. Back, Y. Xuan, P.D. Ye, M. Shim, D.B. Janes, and  S. Mohammadi
Source: Advanced Materials 21 (5): 564, 2009. PDF

Capture and alignment of phi29 viral particles in sub-40 nanometer porous alumina membranes
Author(s): Jeong-Mi Moon, Demir Akin, Yi Xuan, Peide D. Ye, Peixuan Guo, and Rashid Bashir
Source: Biomed Microdevices Vol. 11, Issue 1, pp. 135-142 Feb. 2009. PDF

2008

High Performance Surface Channel In-rich In_0.75Ga_0.25As MOSFETs with ALD High-k as Gate Dielectric
Author(s): Y. Xuan, T. Shen, M. Xu, Y.Q. Wu and P.D. Ye
Source: 2008 International Electron Devices Meeting (IEDM): Page 371-374, December 15-17, 2008. PDF

Multi-probe Interface Characterization of In_0.65Ga_0.35As/Al₂O₃ MOSFET
Author(s): D. Varghese, Y. Xuan, Y.Q. Wu, T. Shen, P.D. Ye, and M.A. Alam
Source: 2008 International Electron Devices Meeting (IEDM): Page 379-382, December 15-17, 2008. PDF

Atomic-layer-deposited Al₂O₃/GaAs metal-oxide-semiconductor field-effect transistor on Si substrate using aspect ratio trapping technique
Author(s): Y.Q. Wu, M. Xu, P.D. Ye, Z. Cheng, J. Li, J.S. Park, J. Hydrick, J. Bai, M. Carroll, J.G. Fiorenza, and A. Lochtefeld
Source: APPLIED PHYSICS LETTERS 93 (24): Art. No. 242106 December 17, 2008. PDF

Magnetoconductance oscillations in graphene antidot arrays
Author(s): T. Shen, Y.Q. Wu, M.A. Capano, L.P. Rokhinson. L.W. Engel, and P.D. Ye
Source: APPLIED PHYSICS LETTERS 93 (8): Art. No. 122102 September 22, 2008. PDF

Band offsets of atomic-layer-deposited Al₂O₃ on GaAs and the effects of surface treatment
Author(s): N.V. Nguyen, O.A. Kirillov, W. Jiang, W. Wang, J.S. Suehle, P.D. Ye, Y. Xuan, N. Goel, K.-W. Choi, W. Tsai, and S. Sayan
Source: APPLIED PHYSICS LETTERS 93 (8): Art. No. 082105 August 27, 2008. PDF

S passivation of GaAs and band bending reduction upon atomic layer deposition of HfO₂/Al₂O₃ nanolaminates
Author(s): F.S. Aguirre-Tostado, M. Milojevic, K.J. Choi, H.C. Kim, C.L. Hinkle, E.M. Vogel, J. Kim, T. Yang, Y. Xuan, P.D. Ye, and R.M. Wallace
Source: APPLIED PHYSICS LETTERS 93 (6): Art. No. 061907 August 13, 2008. PDF

Beyond Silicon's Elemental Logic (Feature Article)
Author(s): Peide D. Ye
Source: IEEE Spectrum, 38-43, September 2008. PDF

Single-walled carbon nanotube transistors fabricated by advanced alignment techniques utilizing CVD growth and dielectrophoresis
Author(s): S. Kim, Y. Xuan, P.D. Ye, S. Mohammadi, and S.W. Lee
Source: Solid-State Electronics 52: 1260-1263, 9 July 2008. PDF

Main determinants for III-V metal-oxide-semiconductor field-effect-transistors (invited)
Author(s): Peide D. Ye
Source: J. Vac. Sci. Technol. A 26 (4): Art. No. 697 June 30, 2008. PDF

Inversion capacitance-voltage studies on GaAs metal-oxide-semiconductor structure using transparent conducting oxide as metal gate
Author(s): T. Yang, Y. Liu, P.D. Ye, Y. Xuan, H.Pal, and M.S. Lundstrom
Source: APPLIED PHYSICS LETTERS 92 (25): Art. No. 252105 June 27, 2008. PDF

Properties of InAs metal-oxide-semiconductor structures with atomic-layer-deposited Al₂O₃ dielectric
Author(s): Ning Li, Eric S. Harmon, James Hyland, David B. Salzman, T.P. Ma, Yi Xuan, and  P.D. Ye
Source: APPLIED PHYSICS LETTERS 92 (14): Art. No. 143507 April 11, 2008. PDF

InGaAs revolutionizes III-V MOSFETs (Feature Article)
Author(s): Peide D. Ye
Source: Compound Semiconductor, 29-31, April 2008. PDF

High-Performance Inversion-Type Enhancement-Mode InGaAs MOSFET With Maximum Drain Current Exceeding 1 A/mm
Author(s): Y. Xuan, Y.Q. Wu, and  P.D. Ye
Source: IEEE Electron Devices Letters 29 (4): Art. No. 294 April 2008. PDF

Top-gated graphene field-effect-transistors formed by decomposition of SiC
Author(s): Y.Q. Wu, P.D. Ye, M.A. Capano, Y. Xuan, Y. Sui, M. Qi, J.A. Cooper, T. Shen, D. Pandey, G. Prahash, and R. Reifenberger
Source: APPLIED PHYSICS LETTERS 92 (9): Art. No. 092102 March 3, 2008. PDF

Processing and Characterization of III-V Compound Semiconductor MOSFETs Using Atomic Layer Deposited Gate Dielectrics (Book Chapter)
Author(s): P.D. Ye, G.D. Wilk and M.M. Frank
Source: Advanced Gate Stacks for High-Mobility Semiconductors, ISSN 1437-0387, Springer Berlin Heidelberg, January 01, 2008. PDF

Atomic-layer-deposited nanostructures for graphene-based nanoelectronics
Author(s): Yi Xuan, Y.Q. Wu, T. Shen, M. Qi, M.A. Capano, J.A. Cooper, and  P.D. Ye
Source: APPLIED PHYSICS LETTERS 92 (1): Art. No. 013101 January 2, 2008. PDF

2007

High Performance submicron inversion-type enhancement-mode InGaAs MOSFETs with ALD Al₂O₃, HfO₂, and HfAlO as gate dielectrics
Author(s): Y. Xuan, Y.Q. Wu, T. Shen, T. Yang and P.D. Ye
Source: 2007 International Electron Devices Meeting (IEDM): Page 637-640, December 10-12, 2007. PDF

Substrate engineering for high-performance surface-channel III-V metal-oxide-semiconductor field-effect transistors
Author(s): Yi Xuan, P.D. Ye, and Tian Shen
Source: APPLIED PHYSICS LETTERS 91 (23): Art. No. 232107 December 5, 2007. PDF

Enhancement-mode GaAs metal-oxide-semiconductor high-electron-mobility transistors with atomic layer deposited Al₂O₃ as gate dielectric
Author(s): H.C. Lin, T. Yang, H. Sharifi, S.K. Kim, Y. Xuan, T. Shen, S. Mohammadi, and P.D. Ye
Source: APPLIED PHYSICS LETTERS 91 (21): Art. No. 212101 November 19 2007. PDF

Submicrometer Inversion-Type Enhancement-Mode InGaAs MOSFET With Atomic-Layer-Deposited Al₂O₃ as Gate Dielectric
Author(s): Y. Xuan, Y.Q. Wu, H.C. Lin, T. Shen, and  P.D. Ye
Source: IEEE Electron Devices Letters 28 (11): Art. No. 935 November 2007. PDF

Simulation and optimization of GaN-based metal-oxide-semiconductor high-electron-mobility transistors using field-dependent drift velocity model
Author(s): W.D. Hu, X.S. Chen, Z.J. Quan, X.M. Zhang, Y. Huang, C.S. Xia, W. Lu, P.D. Ye
Sources: Journal of Applied Physics 102 (3), 034502, August 2, 2007. PDF

Interface studies of GaAs metal-insulator-semiconductor structures using atomic-layer-deposited HfO₂/Al₂O₃ nanolaminate gate dielectric
Author(s): T. Yang, Y. Xuan, D. Zemlyanov, T. Shen, Y.Q. Wu, J.M. Woodall, P.D. Ye, F.S. Aguirre-Tostado, M. Milojevic, S. McDonnell, and R.M. Wallace
Source: APPLIED PHYSICS LETTERS 91 (9): Art. No. 142122 October 5 2007. PDF

Direct-current and radio-frequency characterizations of GaAs metal-insulator-semiconductor field-effect-transistors enabled by self-assembled nanodielectrics
Author(s): H.C. Lin, S.K. Kim, D. Chang, Y. Xuan, S. Mohammadi, P.D. Ye, G. Lu, A. Facchetti, and T.J. Marks
Source: APPLIED PHYSICS LETTERS 91 (9): Art. No. 092103 August 27 2007. PDF

Elastomeric Nanoparticle Composites Covalently Bound to Al₂O₃/GaAs Surfaces
Author(s): Hyon Min Song, P.D. Ye, Albena Ivanisevic 

Source: LANGMUIR 23(18) 9472-9480 2007. PDF

Simplified surface preparation for GaAs passivation using atomic layer deposited high-k dielectrics
Author(s): Y. Xuan, H.C. Lin, P.D. Ye
Source: IEEE Transactions on Electron Devices 54 (8): Art. No. 1811 August 2007. PDF

Enhancement-mode InP n-channel metal-oxide-semiconductor field-effect transistors with atomic-layer-deposited Al₂O₃ dielectrics
Author(s): Y.Q. Wu, Y. Xuan, T. Shen, P.D. Ye, Z. Cheng, A. Lochtefeld
Source: APPLIED PHYSICS LETTERS 91 (2): Art. No. 022108 July 11 2007. PDF

Fabrication of fully transparent nanowire transistors for transparent and flexible electronics
Author(s): S. Ju, A. Facchetti, Y. Xuan, J. Liu, F. Ishikawa, P.D. Ye, C. Zhou, T.J. Marks, J.B. Janes
Source: NATURE NANOTECHOLOGY 2: Art. No. 378 JUNE 3 2007. PDF

Electrical measurements of voltage stressed Al₂O₃ / GaAs MOSFET
Author(s): Z. Tang, P.D. Ye, D. Lee, C.R. Wie
Source: Microelectronics Reliability, on-line, MARCH 2007. PDF

Atomic layer deposited Al₂O₃ for gate dielectric and passivation layer of single-walled carbon nanotube transistors
Author(s): S.K. Kim, Y. Xuan, P.D. Ye, S. Mohammadi, J.H. Back, M. Shim
Source: APPLIED PHYSICS LETTERS 90 (16): Art. No. 163108 APRIL 17 2007. PDF

Photo-assisted capacitance-voltage characterization of high-quality atomic-layer-deposited Al₂O₃/GaN metal-oxide-semiconductor structures
Author(s): Y.Q. Wu, T. Shen, P.D. Ye, G.D. Wilk
Source: APPLIED PHYSICS LETTERS 90 (14): Art. No. 143504 APRIL 2 2007. PDF

Current transport and maximum dielectric strength of atomic-layer-deposited ultrathin Al₂O₃ on GaAs
Author(s): Y.Q. Wu, H.C. Lin, P.D. Ye, G.D. Wilk
Source: APPLIED PHYSICS LETTERS 90 (7): Art. No. 072105 FEB 14 2007. PDF

2006

Capacitance-voltage characterization of atomic-layer-deposited Al2O3/InGaAs and Al2O3/GaAs metal-oxide-semiconductor structures
Author(s): Y. Xuan, H.C. Lin, and P.D. Ye
Source: ECS Transactions, vol.3, no.3, pp 59-69, Oct. 2006.  PDF

High-performance GaAs metal-insulator-semiconductor field-effect transistors enabled by self-assembled nanodielectrics
Author(s): Lin HC, Ye PD, Xuan Y, Lu G, Facchetti A, Marks TJ
Source: APPLIED PHYSICS LETTERS 89 (14): Art. No. 142101 OCT 2 2006  PDF

Self-heating simulation of GaN-based metal-oxide-semiconductor high-electron-mobility transistors including hot electron and quantum effects
Author(s): W.D. Hu, X.S. Chen, Z.J. Quan, C.S. Xia, W. Lu, P.D. Ye
Sources: Journal of Applied Physics 100 (7), 074501,  OCT 1 2006. PDF

Melting of a 2D quantum electron solid in high magnetic field
Author(s): Chen YP , Sambandamurthy G, Wang ZH, Lewis RM, Engel LW, Tsui DC, Ye PD, Pfeiffer LN, West KW
Source: NATURE PHYSICS 2 (7): 452-455 JUL 2006 PDF

Minority-carrier characteristics of InGaAs metal-oxide-semiconductor structures using atomic-layer-deposited Al2O3 gate dielectric
Author(s): Xuan Y, Ye PD, Lin HC, Wilk GD
Source: APPLIED PHYSICS LETTERS 89 (13): Art. No. 132103 SEP 25 2006  PDF

Current-transport properties of atomic-layer-depo sited ultrathin Al2O3 on GaAs
Author(s): Lin HC, Ye PD, Wilk GD
Source: SOLID-STATE ELECTRONICS 50 (6): 1012-1015 JUN 2006 PDF

Capacitance-voltage studies on enhancement-mode InGaAs metal-oxide-semiconductor field-effect transistor using atomic-layer-deposited Al2O3 gate dielectric
Author(s): Xuan Y, Lin HC, Ye PD, Wilk GD
Source: APPLIED PHYSICS LETTERS 88 (26): Art. No. 263518 JUN 26 2006  PDF

GaN metal-oxide-semiconductor field-effect-transistor with atomic layer deposited Al2O3 as gate dielectric
Author(s): Y.Q. Wu, P.D. Ye, G.D. Wilk and B. Yang
Sources: Materials Science and Engineering B 135, 282-284, August 20, 2006. PDF

2005

Leakage current and breakdown electric-field studies on ultrathin atomic-layer-deposited Al2O3 on GaAs
Author(s): Lin HC, Ye PD, Wilk GD
Source: APPLIED PHYSICS LETTERS 87 (18): Art. No. 182904 OCT 31 2005  PDF

Modulation of the high mobility two-dimensional electrons in Si/SiGe using atomic-layer-deposited gate dielectric
Author(s): Lai K, Ye PD, Pan W, Tsui DC, Lyon SA, Muhlberger M, Schaffler F
Source: APPLIED PHYSICS LETTERS 87 (14): Art. No. 142103 OCT 3 2005  PDF

Formation and characterization of nanometer scale metal-oxide-semiconductor structures on GaAs using low-temperature atomic layer deposition
Author(s): Ye PD, Wilk GD, Tois EE, Wang JJ
Source: APPLIED PHYSICS LETTERS 87 (1): Art. No. 013501 JUL 4 2005  PDF

Improvement of GaAs metal-semiconductor field-effect transistor drain-source breakdown voltage by oxide surface passivation grown by atomic layer deposition
Author(s): Ye PD, Wilk DG, Yang B, Chu SNG, Ng KK, Bude J
Source: SOLID-STATE ELECTRONICS 49 (5): 790-794 MAY 2005  PDF

GaN metal-oxide-semiconductor high-electron-mobility-transistor with atomic layer deposited Al2O3 as gate dielectric
Author(s): Ye PD, Yang B, Ng KK, Bude J, Wilk GD, Halder S, Hwang JCM
Source: APPLIED PHYSICS LETTERS 86 (6): Art. No. 063501 FEB 7 2005  PDF

2004

Evidence for two different solid phases of two-dimensional electrons in high magnetic fields
Author(s): Chen YP, Lewis RM, Engel LW, Tsui DC, Ye PD, Wang ZH, Pfeiffer LN, West KW
Source: PHYSICAL REVIEW LETTERS 93 (20): Art. No. 206805 NOV 12 2004 PDF

Evidence of a first order phase transition between Wigner crystal and Bubble phases of 2D electrons in higher Landau levels
Author(s): Lewis RM, Chen YP, Engel LW, Tsui DC, Ye PD, Wang ZH, Pfeiffer LN, West KW
Source: PHYSICAL REVIEW LETTERS 93 (17): Art. No. 176808 OCT 22 2004 PDF

GaAs-Based metal-oxide semiconductor field-effect transistors with Al2O3 gate dielectrics grown by atomic layer deposition
Author(s): Ye PD, Wilk GD, Yang B, Kwo J, Gossmann HJL, Frei M, Mannaerts JP, Sergent M, Hong M, Ng KK, Bude J
Source: JOURNAL OF ELECTRONIC MATERIALS 33 (8): 912-915 AUG 2004

Wigner crystallization about v=3
Author(s): Lewis RM, Chen Y, Engel LW, Tsui DC, Ye PD, Pfeiffer LN, West KW
Source: PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES 22 (1-3): 104-107 APR 2004

Measurements of the temperature dependence of the bubble phase
Author(s): Lewis RM, Chen Y, Engle LW, Ye PD, Tsui DC
Source: PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES 22 (1-3): 119-121 APR 2004

Depletion-mode InGaAs metal-oxide-semiconductor field-effect transistor with oxide gate dielectric grown by atomic-layer deposition
Author(s): Ye PD, Wilk GD, Yang B, Kwo J, Gossmann HJL, Hong M, Ng KK, Bude J
Source: APPLIED PHYSICS LETTERS 84 (3): 434-436 JAN 19 2004  PDF

GaN MOS-HEMT using atomic layer deposition Al2O3 as gate dielectric and surface passivation
Author(s): P.D. Ye, B. Yang, K.K. Ng, J. Bude, G.D. Wilk, S. Halder and J.C.M. Hwang
Source: International Journal of High Speed Electronics and Systems, Vol. 14, No.3, pp. 791-796 (2004) PDF

2003

Microwave resonance of the 2D Wigner crystal around integer Landau fillings
Author(s): Chen Y, Lewis RM, Engel LW, Tsui DC, Ye PD, Pfeiffer LN, West KW
Source: PHYSICAL REVIEW LETTERS 91 (1): Art. No. 016801 JUL 4 2003 PDF

Bilayer process for T-gates and Gamma-gates using 100-kV e-beam lithography
Author(s): Ocola LE, Tennant DM, Ye PD
Source: MICROELECTRONIC ENGINEERING 67-8: 104-108 JUN 2003

GaAs metal-oxide-semiconductor field-effect transistor with nanometerthin dielectric grown by atomic layer deposition
Author(s): Ye PD, Wilk GD, Yang B, Kwo J, Chu SNG, Nakahara S, Gossmann HJL, Mannaerts JP, Hong M, Ng KK, Bude J
Source: APPLIED PHYSICS LETTERS 83 (1): 180-182 JUL 7 2003 PDF

GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition
Author(s): Ye PD, Wilk GD, Kwo J, Yang B, Gossmann HJL, Frei M, Chu SNG, Mannaerts JP, Sergent M, Hong M, Ng KK, Bude J
Source: IEEE ELECTRON DEVICE LETTERS 24 (4): 209-211 APR 2003 PDF

Impact of metal/oxide interface on DC and RF performance of depletion-mode GaAs MOSFET employing MBE grown Ga2O3(Gd2O3) as gate dielectric
Author(s): Yang B, Ye PD, Kwo J, Frei MR, Gossmann HJL, Mannaerts JP, Sergent M, Hong M, Bude KNJ
Source: JOURNAL OF CRYSTAL GROWTH 251 (1-4): 837-842 APR 2003

Advances in High k Gate Dielectrics for Si and III-V Semiconductors
Author(s): J. Kwo, M.Hong, B. Busch, M.A. Muller, Y.J. Chabal, A.R. Kortan, J.P. Mannaerts, B. Yang, P.D. Ye, H. Gossmann, A. M. Sergent, K.K. Ng, J. Bude, W.H. Schulte, E. Garfunkel, and T. Gustafsson
Source: Journal of Crystal Growth, 251 (1-4), 645, April 2003

2002 and early

Correlation lengths of the Wigner-crystal order in a two-dimensional electron system at high magnetic fields
Author(s): Ye PD, Engel LW, Tsui DC, Lewis RM, Pfeiffer LN, West K
Source: PHYSICAL REVIEW LETTERS 89 (17): Art. No. 176802 OCT 21 2002 PDF

Microwave resonance of the bubble phases in 1/4 and 3/4 filled high Landau levels
Author(s): Lewis RM, Ye PD, Engel LW, Tsui DC, Pfeiffer LN, West KW
Source: PHYSICAL REVIEW LETTERS 89 (13): Art. No. 136804 SEP 23 2002 PDF

Microwave conductivity of antidot array in regime of fractional quantum Hall effect
Author(s): Ye PD, Engel LW, Tsui DC, Simmons JA, Wendt JR, Vawter GA, Reno JL
Source: PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES 12 (1-4): 109-111 JAN 2002

High magnetic-field microwave conductivity of two-dimensional electrons in an array of antidots
Author(s): Ye PD, Engel LW, Tsui DC, Simmons JA, Wendt JR, Vawter GA, Reno JL
Source: PHYSICAL REVIEW B 65 (12): Art. No. 121305 MAR 15 2002  PDF

Giant microwave photoresistance of two-dimensional electron gas
Author(s): Ye PD, Engel LW, Tsui DC, Simmons JA, Wendt JR, Vawter GA, Reno JL
Source: APPLIED PHYSICS LETTERS 79 (14): 2193-2195 OCT 1 2001  PDF

Internal magnetic focusing in an array of ballistic cavities
Author(s): Ye PD, Tarucha S
Source: PHYSICAL REVIEW B 59 (15): 9794-9797 APR 15 1999 PDF

Internal magnetic focusing in an array of open quantum dots
Author(s): Ye PD, Tarucha S
Source: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 38 (1B): 319-321 JAN 1999

Huge magnetoresistance oscillations in periodic magnetic fields
Author(s): Ye PD, Weiss D, Gerhardts RR, von Klitzing K, Tarucha S
Source: PHYSICA B 251: 330-333 JUN 1998 PDF

Magnetoresistance oscillations induced by periodically arranged micromagnets
Author(s): Ye PD, Weiss D, Gerhardts RR, Nickel H
Source: JOURNAL OF APPLIED PHYSICS 81 (8): 5444-5448 Part 2B, APR 15 1997 PDF

Electrons in mesoscopically inhomogeneous magnetic fields
Author(s): Ye PD, Weiss D, Gerhardts RR, Lutjering G, von Klitzing K, Nickel H
Source: SEMICONDUCTOR SCIENCE AND TECHNOLOGY 11 (11): 1613-1617 Suppl. S, NOV 1996 PDF

Magnetotransport in periodic magnetic fields
Author(s): Ye PD, Weiss D, Gerhardts RR, von Klitzing K, Eberl K, Nickel H
Source: SURFACE SCIENCE 362 (1-3): 337-340 1996 PDF

FABRICATION AND CHARACTERIZATION OF MICROMAGNET ARRAYS ON TOP OF GAAS/ALGAAS HETEROSTRUCTURES
Author(s): YE PD, WEISS D, VON KLITZING K, EBERL K, NICKEL H
Source: APPLIED PHYSICS LETTERS 67 (10): 1441-1443 SEP 4 1995 PDF

STRAIN-INDUCED MAGNETORESISTANCE OSCILLATIONS IN GAAS-ALGAAS HETEROJUNCTIONS WITH FERROMAGNETIC AND SUPERCONDUCTING SUBMICROMETER GRATINGS
Author(s): YE PD, WEISS D, GERHARDTS RR, VON KLITZING K, EBERL K, NICKEL H, FOXON CT
Source: SEMICONDUCTOR SCIENCE AND TECHNOLOGY 10 (5): 715-719 MAY 1995 PDF

ELECTRONS IN A PERIODIC MAGNETIC-FIELD-INDUCED BY A REGULAR ARRAY OF MICROMAGNETS
Author(s): YE PD, WEISS D, GERHARDTS RR, SEEGER M, VON KLITZING K, EBERL K, NICKEL H
Source: PHYSICAL REVIEW LETTERS 74 (15): 3013-3016 APR 10 1995 PDF