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2017

Sub-60 mV/dec Ferroelectric HZO MoS2 Negative Capacitance Field-effect Transistor with Internal Metal Gate: the Role of Parasitic Capacitance
Author(s): M. Si, C. Jiang, C.-J. Su, Y.-T. Tang, L. Yang, W. Chung, M.A. Alam, P.D. Ye
Source: 2017 International Electron Devices Meeting (IEDM): December 4-6, 2017. pp. xxx-xxx.

Hysteresis-free Negative Capacitance Germanium CMOS FinFETs with Bi-directional Sub-60 mV/dec
Author(s): Wonil Chung, Mengwei Si, and Peide D. Ye
Source: 2017 International Electron Devices Meeting (IEDM): December 4-6, 2017. pp. xxx-xxx.

Thermo-dynamic Studies of β-Ga2O3 Nano-membrane Field-effect Transistors on Sapphire Substrate
Author(s): : Hong Zhou, Kerry Maize, Jinhyun Noh, Ali Shakouri, Peide D.  Ye
Source: ACS Omega 2017, xx, xxxx-xxxx.

β-Ga2O3 Nano-membrane Negative Capacitance Field-effect Transistor with Steep Subthreshold Slope for Wide Bandgap Logic Applications
Author(s): : Mengwei Si, Lingming Yang, Hong Zhou, Peide D.  Ye
Source: ACS Omega 2017, xx, xxxx-xxxx.

Ultra-fast Laser Shock Induced Confined Metaphase Transformation for Direct Writing of Black Phosphorus Thin Films
Author(s): Gang Qiu, Qiong Nian, Maithilee Motlag, Shengyu Jin, Biwei Deng, Yexin Deng, Adam R. Charnas, Peide D. Ye, Gary J. Cheng
Source: Advanced Materials 2017, xxx, xxx-xxx.

Steep Slope Hysteresis-free Negative Capacitance MoS2 Transistors
Author(s): Mengwei Si, Chun-Jung Su, Chunsheng Jiang, Nathan J. Conrad, Hong Zhou, Kerry D. Maize, Gang Qiu, Chien-Ting Wu, Ali Shakouri, Mahammad A. Alam, Peide D. Ye
Source: Nature Nanotechnology 2017, xxx, xxx-xxx.

Controlled Growth of Large-Size 2D Selenium Nanosheet and Its Electronic and Optoelectronic Applications
Author(s): Jin-Kai Qiu, Gang Qiu, Jie Jian, Hong Zhou, Ling-Ming Yang, Adam R. Charnas, Dmitry Zemlyanov, Cheng-Yan Xu, Xianfan Xu, Wenzhuo Wu, Hai-Yan Wang, and  Peide D. Ye
Source: ACS Nano 2017,xx, xxx-xxx.

β-Ga2O3 on Insulator Field-effect Transistors with Drain Currents Exceeding 1.5 A/mm and Their Self-heating Effect
Author(s): Hong Zhou, Kerry Maize, Gang Qiu, Ali Shakouri and  Peide D. Ye
Source: Applied Physics Letters 111, 092102 (2017). PDF

How Important Is the Metal-Semiconductor Contact for Schottky Barrier Transistors: A Case Study on Few-Layer Black Phosphorus?
Author(s): : Lingming Yang, Adam Charnas, Gang Qiu, Yu-Ming Lin, Chun-Chieh Lu, Wilman Tsai, Qing Paduano, Michael Snure, Peide D.  Ye
Source: ACS Omega 2017, 2, 4173-4179. PDF

Enhancement-Mode AlGaN/GaN fin-MOSHEMTs on Si substrate with Atomic Layer Epitaxy MgCaO Gate Dielectric
Author(s): Hong Zhou, Xiabing Lou, Sang Bok Kim, Kelson D. Chabak, Roy G. Gordon and  Peide D. Ye
Source: IEEE Electron Devices Letters, Vol. 38, No. 9, 1294-1297, 2017. PDF

DC and RF Perfromance of AlGaN/GaN/SiC MOSHEMTs With Deep Sub-Micron T-Gates and Atomic Layer Epitaxy MgCaO as Gate Dielectric
Author(s): Hong Zhou, Xiabing Lou, Kartnn Sutherlin, Jarren Summers, Sang Bok Kim, Kelson D. Chabak, Roy G. Gordon and  Peide D. Ye
Source: IEEE Electron Devices Letters, Vol. 38, No. 10, 1409-1412, 2017. PDF

Experimental Demonstration of Electrically-Tunable Bandgap on 2D Black Phosphorus by Quantum Confined Stark Effect
Author(s): Lingming Yang, Yu-Ming Lin, Wilman Tsai, and Peide D. Ye
Source: Symposia on VLSI Technology and Circuits (VLSI 2017), T4-3, T48-49, 2017. PDF

1D van der Waals Material Tellurium: Raman Spectroscopy under Strain and Magneto-transport
Author(s): Yuchen Du, Gang Qiu, Yixiu Wang, Mengwei Si, Xianfan Xu, Wenzhuo Wu, Peide D. Ye
Source: Nano Letters, 2017, 17, 3965-3973. PDF

Mid-Infrared Ultrafast Carrier Dynamics in Thin Film Black Phosphorus
Author(s): Vasudevan Iyer, Peide D. Ye, Xianfan Xu
Source: 2D Materials 4 (2017) 021032. PDF

Reliable Passivation of Black Phosphorus by Thin Hybrid Coating
Author(s): S. Gamage, A. Fali, N. Aghamiri, L. Yang, P. D. Ye, Y. Abate
Source: Nanotechnology 28 (2017) 265201. PDF

High Resolution Thermal Imaging of Self Heating Breakdown in AlGaN/GaN MOSHEMTs
Author(s): Kerry Maize, Hong Zhou, Peide D. Ye, Ali Shakouri
Source: 2017 IEEE International Reliability Physics Symposium (IRPS), 2017 PDF

Anomalous Bias Temperature Instability on Accumulation-Mode Ge and III-V MOSFETs
Author(s): Mengwei Si, Heng Wu, SangHoon Shin, Wei Luo, Nathan J. Conrad, Wangran Wu, Jingyun Zhang, Muhammad A. Alam, Peide D. Ye
Source: 2017 IEEE International Reliability Physics Symposium (IRPS), 2017 PDF

Chemically exfoliating large sheets of phosphorene via choline chloride urea viscosity-tuning
Author(s): Amy Ng, Thomas Sutto, Bernard Matis, Yexin Deng, Peide D. Ye, Rhonda Stroud, Todd Brintlinger, Nabil Bassim
Source: Nanotechnology 28 (2017) 155601. PDF

Total Ionizing Dose (TID) Effects in GaAs MOSFETs with La-Based Epitaxial Gate Dielectrics
Author(s): Shufeng Ren, Maruf A. Bhuiyan, Jingyun Zhang, Xiabing Lou, Mengwei Si, Xing Gong, Rong Jiang, Kai Ni, Xin Wan, En Xia Zhang, Roy G. Gordon, Robert A. Reed, Daniel M. Fleetwood, Peide D. Ye, Tso-Ping Ma
Source: IEEE Transactions on Nuclear Science, vol. 64, no. 1, 164-169, 2017. PDF

Total Ionizing Dose (TID) Effects in Ultra-Thin Body Ge-on-Insulator (GOI) Junctionless CMOSFETs with Recessed Source/Drain and Channel
Author(s): Shufeng Ren, Maruf A. Bhuiyan, Heng Wu, Rong Jiang, Kai Ni, En Xia Zhang,Robert A. Reed, Daniel M. Fleetwood, Peide D. Ye, Tso-Ping Ma
Source: IEEE Transactions on Nuclear Science, vol. 64, no. 1, 176-180, 2017. PDF

Experimental Investigation of Ballistic Carrier Transport for Sub-100 nm Ge N-MOSFETs
Author(s): Ran Cheng, Longxiang Yin, Heng Wu, Xiao Yu, Yanyan Zhang, Wangran Wu, Bing Chen, Peide D. Ye, Xiaoyan Liu, Yi Zhao
Source: IEEE Electron Devices Letters, Vol. 38, No. 4, 434-437, 2017. PDF

Fin-width Effects on Characteristics of InGaAs-Based Vertical Independent Double-Gate Transistor
Author(s): Sung-Jae Chang, Hong Zhou, Nanbo Gong, Dong-Min Kang, Jong-Won Lim, Mengwei Si, Peide D. Ye, T.P. Ma
Source: IEEE Electron Devices Letters, Vol. 38, No. 4, 441-444, 2017. PDF

High Performance Depletion/Enhancement-Mode β-Ga2O3 on Insulator (GOOI) Field-effect Transistors with Record Drain Currents of 600/450 mA/mm
Author(s): Hong Zhou, Mengwei Si, Sami Alghmadi, Gang Qiu, Lingming Yang and  Peide D. Ye
Source: IEEE Electron Devices Letters, Vol. 38, No.1, 103-106, 2017. PDF

2016

Switching Channels
Author(s): Peide D. Ye
Source: IEEE Spectrum, December 2016, 41-45. PDF

Few-Layer Black Phosphorus PMOSFETs with BN/Al2O3 Bilayer Gate Dielectric: Achieving Ion=850uA/um,gm=340uS/um and Rc=0.58kOhm.um
Author(s): L.M. Yang, G. Qiu, M.W. Si, A.R. Charnas, C.A. Milligan, D.Y. Zemlyanov, H. Zhou, Y.C. Du, Y.M. Lin, W. Tsai, Qing Paduano, M. Snure, P.D. Ye
Source: 2016 International Electron Devices Meeting (IEDM): December 4-7, 2016. pp. 127-130. PDF

Substrate and Layout Engineering to Suppress Self-heating in Floating Body Transistors
Author(s): S.H. Shin, S.-H. Kim, S. Kim, H. Wu, P.D. Ye, and M.A. Alam
Source: 2016 International Electron Devices Meeting (IEDM): December 4-7, 2016. pp. 404-407. PDF

Band Offsets and trap-related electron transistions at interfaces of (100) InAs with atomic-layer deposited Al2O3
Author(s): H.-Y. Chou, E. O'Connor, A. O'Mahony, I.M. Povey, P.K. Hurley, Lin Dong, Peide D. Ye, V.V. Afanasev, M. Houssa, and A. Stesmans
Source: Journal of Applied Physics, 120, 235701, 2016. PDF

Epitaxial Growth of MgCaO on GaN by Atomic Layer Deposition
Author(s): Xiabing Lou, Hong Zhou, Sang Bok Kim, Sami Alghamdi, Xian Gong, Jun Feng, Peide D. Ye, Roy G. Gordon
Source: Nano Letters 2016, 16, 7650-7654. PDF

Observation of Optical and Electrical In-plane Anisotropy in High-mobility Few-layer ZrTe5
Author(s): Gang Qiu, Yuchen Du, Adam Charnas, Hong Zhou, Shengyu Jin, Zhe Luo, Dmitry Zemlyanov, Xianfan Xu, Gary Cheng, Peide D. Ye
Source: Nano Letters 2016, 16, 7364-7369. DOI:10.1021/acs.nanolett.6b02629 PDF

Auxetic Black Phosphorus: A 2D Material with Negative Poisson's Ratio
Author(s): Yuchen Du, Jesse Maassen, Wangran Wu, Zhe Luo, Xianfan Xu, Peide D. Ye
Source: Nano Letters 2016, 16, 6701-6708. PDF

Surface Chemistry of Black Phosphorus Under Controlled Oxidative Environment
Author(s): Wei Luo, Dmitry Zemlyanov, Cory Milligan, Yuchen Du, Lingming Yang, Yanqing Wu, Peide D. Ye
Source: Nanotechnology 27 (2016) 434002. PDF

Improved Al2O3/β-Ga2O3 (-201) Interface Through Piranha Pretreatment and Post Deposition Annealing
Author(s): Hong Zhou, Sami Alghmadi, Gang Qiu, Mengwei Si and  Peide D. Ye
Source: IEEE Electron Devices Letters, Vol. 37, No. 11, 1411-1414, 2016. PDF

RTN and low Frequency Noise on Ultra-scaled Near-ballistic Ge Nanowire nMOSFETs
Author(s): Wangran Wu, Heng Wu, Mengwei Si, Nathan Conrad, Yi Zhao, and P.D. Ye
Source: Symposia on VLSI Technology and Circuits (VLSI 2016), T16.1, p. 170-171, 2016. PDF

Demonstration of Ge Nanowire CMOS Devices and Circuits for Ultimate Scaling
Author(s): Heng Wu, Wangran, Mengwei Si and  Peide D. Ye
Source: IEEE Transactions on Electron Devices, Vol. 63, No. 8, 3049-3057, 2016. PDF

Ge nMOSFETs: Performance and Variability Dependences on Operation Mode and Geometry
Author(s): Heng Wu, Gang Qiu, Wangran Wu and  Peide D. Ye
Source: IEEE Electron Devices Letters, Vol. xx, No. xx, xxx-xxx, 2016.

Fully-Depleted Ge CMOS Devices and Logic Circuilts on Si
Author(s): Heng Wu and  Peide D. Ye
Source: IEEE Transactions on Electron Devices, Vol. 63, No. 8, 3028-3033, 2016. PDF

0.1-um InAlN/GaN High Electron-Mobility Transistors for Power Amplifiers Operating at 71-76 and 81-86 GHz: Impact of Passivation and Gate Recess
Author(s): Dong Xu, K.K. Chu, J. Diaz, M. Ashamn, J. Komiak, L. Pleasant, A. Vera, P. Seekell, X. Yang, C. Creamer, K. Nichols, K.H.G. Duh, P.M. Smith, P.C. Chao, L. Dong, Peide D. Ye
Source: IEEE Transactions on Electron Devices, Vol. 63, No. 8, 3076-3083, August 2016. PDF

Transport studies in two dimension transition metal dichalcogenides and black phosphorus (Review)
Author(s): Yuchen Du, Adam Neal, Hong Zhou, Peide D. Ye
Source: Journal of Physics: Condensed Matter 28 (2016) 263002 PDF

Ionic Liquid Gating on Atomic Layer Deposition Passivated GaN: Ultra-high Electron Density Induced High Drain Current and Low Contact Resistance
Author(s): Hong Zhou, Yuchen Du, Peide D. Ye
Source: Applied Physics Letters 108, 202102 (2016) PDF

Contacts between Two- and Three- Dimensional Materials:Ohmic, Schottky, and p-n Heterojunctions
Author(s): Yang Xu, Cheng Cheng, Sichao Du, Jianyi Yang, Bin Yu, Jack Luo, Wenyan Yin, Erping Li, Shurong Dong, Peide D. Ye, Xiangfeng Duan
Source: ACS Nano, 10, 4895-4919 (2016) PDF

Mechanisms of Current Fluctuation in Ambipolar Black Phosphorus Field-Effect Transistors
Author(s): Xuefei Li, Yuchen Du, Mengwei Si, Lingming Yang, Shichao Li, Tiaoyang Li, Xiong Xiong, Peide D. Ye, Yanqing Wu
Source: Nanoscale 2016, 8, 3572-3578. PDF

Performance Enhancement of Black Phosphorus Field-Effect Transistors by Chemical Doping
Author(s): Yuchen Du, Lingming Yang, Hong Zhou, and  Peide D. Ye
Source: IEEE Electron Devices Letters, Vol. 37, No. 4, 429-432, 2016. PDF

High Performance InAlN/GaN MOSHEMTs Enabled by Atomic Layer Epitaxy MgCaO as Gate Dielectric
Author(s): Hong Zhou, Xiabing Lou, Nathan J. Conrad, Mengwei Si, Heng Wu, Sami Alghamdi, Shiping Guo, Roy G. Gordon, and Peide D. Ye
Source: IEEE Electron Devices Letters, Vol. 37, No. 5, 556-559, 2016. PDF

Weak Localization in Few-Layer Black Phosphorus
Author(s): Yuchen Du, Adam T. Neal, Hong Zhou and Peide D. Ye
Source: 2D Materials 3, 024003, 2016. PDF

2015

First Demonstration of Ge Nanowire CMOS Circuits: Lowest SS of 64 mV/dec, Highest gmax of 1057 µS/µm in Ge nFETs and Highest Maximum Voltage Gain of 54 V/V in Ge CMOS inverters
Author(s): Heng Wu, Wangran Wu, Mengwei Si, and  Peide D. Ye
Source: 2015 International Electron Devices Meeting (IEDM): December 15-17, 2015. PDF

InGaAs 3D MOSFETs with Drastically Different Shapes Formed by Anisotropic Wet Etching
Author(s): J. Zhang, M. Si, X.B. Lou, W. Wu, R.G. Gordon, and P.D. Ye
Source: 2015 International Electron Devices Meeting (IEDM): December 15-17, 2015. PDF

Large, tunable magnetoresistance in non-magnetic III-V nanowires
Author(s): Shichao Li, Wei Luo, Jiangjiang Gu, Xiang Cheng, Peide D. Ye, Yanqing Wu
Source: Nano Letters 2015, 15, 8026-8031 (DOI: 10.1021/acs.nanolett5b03366) PDF

Charge Collection Mechanism on GaAs MOSFETs
Author(s): Kai Ni, En Xia Zhang, Issak K. Samsel, Ronald D. Schrimpf, Robert A. Reed, Daniel M. Fleetwood, Andrew L. Sternberg, Michael W. McCurdy, Shufeng REn, Tso-Ping Ma, Ling Dong, Jingyun Zhang, and Peide D. Ye
Source: IEEE Transactions on Nuclear Science, vol. 62, no. 6, 2752-2759, 2015. PDF

Total Ionizing Dose (TID) Effects in Extremely Scaled Ultrathin Channel Nanowire (NW) Gate-all-around (GAA) InGaAs MOSFETs
Author(s): Shufeng Ren, Mengwei Si, Kai Ni, Xin Wan, Jin Chen, Sungjae Chang, Xiao Sun, En Xia Zhnag, Robert A. Reed, Daniel M. Fleetwood, Peide D. Ye, Sharon Cui, and T.P. Ma
Source: IEEE Transactions on Nuclear Science, vol. 62, no. 6, 2888-2893, 2015. PDF

Anisotropic in-plane thermal conductivity observed in few-layer black phosphorus
Author(s): Zhe Luo, Jesse Maassen, Yexin Deng, Yuchen Du, Richard Garrelts, Mark S. Lundstrom, Peide D. Ye, and Xianfan Xu
Source: Nature Communications 2015 DOI:10.1038/ncomms9572 PDF

Surface and interface study of half cycle atomic layer deposited Al2O3 on black phosphorus
Author(s): Hui Zhu, Xiaoye Qin, Angelica Azcatl, Rafik Addou, Stephen McDonnel, Peide D. Ye, and Robert M. Wallace
Source: Microelectronic Engineering 147, 1-4, 2015. PDF

Nanomanufacturing of 2D Transition Metal Dichalcogenide Materials Using Self-Assembled DNA Nanotubes
Author(s): Jungwook Choi, Haorong Chen, Feiran Li, Lingming Yang, Steve S. Kim, Rajesh R. Naik, Peide D. Ye, and Jong Hyun Choi
Source: Small 2015, DOI:10.1002/smll.201501431 PDF

Al2O3 on Black Phosphorus by Atomic Layer Deposition: An in Situ Interface Study
Author(s): Hui Zhu, Stephen McDonnel, Xiaoye Qin, Angelica Azcatl, Lanxia Cheng, Rafik Addou, Jiyoung Kim, Peide D. Ye, and Robert M. Wallace
Source: ACS Applied Materials and Interface, 2015. PDF

Direct Observation of Self-heating in III-V Gate-all-around Nanowire MOSFETs
Author(s): SangHoon Shin, Muhammand Abdul Wahab, Muhammad Masuduzzaman, Kerry Maize, Jiangjiang Gu, Mengwei Si, Ali Shakouri, Peide D. Ye, Muhammad Ashraful Alam
Source: IEEE Transactions on Electronic Devices, Vol. 62, No. 11, 3516-3523, 2015. PDF

Low Frequency Noise and Random Telegraph Noise on Near-Ballistic III-V MOSFETs
Author(s): Mengwei Si, Nathan J. Conrad, SangHong Shin, Jiangjiang Gu, Jingyun Zhang, Muhammand Asharful Alam, and Peide D. Ye
Source: IEEE Transactions on Electronic Devices, Vol. 62, No. 11, 3516-3523, 2015. PDF

Characterization and Reliability of III-V Gate-all-around MOSFETs (invited)
Author(s): Mengwei Si SangHoon Shin, Nathan J. Conrad, Jiangjiang Gu, Jingyun Zhang, Muhammad A. Alam, Peide D. Ye
Source: 2015 IEEE International Reliability Physics Symposium (IRPS), 4A01, 2015. PDF

Germanium nMOSFETs with Recessed Channel and S/D: Contact, Scalability, Interface and Drain Current Exceeding 1A/mm
Author(s): Heng Wu, Mengwei Si, Lin Dong, Jiangjiang Gu, Jingyun Zhang and Peide D. Ye
Source: IEEE Transactions on Electronic Devices, Vol. 62, No. 5, 1419-1426, May 2015. PDF

First Experimental Demonstration of Ge 3D FinFET CMOS Circuits
Author(s): Heng Wu, Wei Luo, Hong Zhou, Mengwei Si, Jingyun Zhang and P.D. Ye
Source: Symposia on VLSI Technology and Circuits (VLSI 2015), 2015. PDF

0.1-um Atomic Layer Deposition Al2O3 Passivated InAlN/GaN High Electron-Mobility Transistors for E-Band Power Amplifier
Author(s): Dong Xu, K.K. Chu, J. Diaz, M. Ashamn, J. Komiak, L. Pleasant, C. Creamer, K. Nichols, K.H.G. Duh, P.M. Smith, P.C. Chao, L. Dong, Peide D. Ye
Source: IEEE Electron Devices Letters, Vol. 36, No. 5, 442-444, May 2015. PDF

Inversion-mode GaAs wave-shaped field-effect transistor on GaAs (100) substrate
Author(s): Jingyun Zhang, Xiabing Lou, Mengwei Si, Heng Wu, Jiayi Shao, Michael J. Manfra, Roy G. Gordon and Peide D. Ye
Source: APPLIED PHYSICS LETTERS 106 (7): Art. No. 073506, February 20, 2015.PDF

Performance Potential and Limit of MoS2 Transistors
Author(s): Xuefei Li, Lingming Yang, Mengwei Si, Sichao Li, Mingqiang Huang, P.D. Ye, and Yanqing Wu
Source: Advanced Materials 2015 DOI:10.1002/adma.201405068 PDF

Laser Direct Synthesis of Silicon Nanowire Field Effect Transistors
Author(s): Woongsik Nam, James I. Mitchell, Peide D. Ye, and Xianfan Xu
Source: Nanotechnology Vol. 26, 055306, 2015. PDF

2014

First Experimental Demonstration of Ge CMOS Circuits
Author(s): Heng Wu, Nathan Conrad, Wei Luo, and  Peide D. Ye
Source: 2014 International Electron Devices Meeting (IEDM): December 15-17, 2014. PDF

Deep Sub-100nm Ge CMOS Devices on Si with the Recessed S/D and Channel
Author(s): Heng Wu, Wei Lu, Mengwei Si, Jingyun Zhang, Hong Zhou, and  Peide D. Ye
Source: 2014 International Electron Devices Meeting (IEDM): December 15-17, 2014. PDF

Low-Frequency Noise and RTN on Near-Ballistic III-V GAA Nanowire MOSFETs
Author(s): N. Conrad, M. Si, S.H. Shin, J.J. Gu, J. Zhang, M.A. Alam and P.D. Ye
Source: 2014 International Electron Devices Meeting (IEDM): December 15-17, 2014. PDF

Direct Observation of Self-heating in III-V Gate-all-around Nanowire MOSFETs
Author(s): S.H. Shin, M. Masuduzzaman, M.A. Wahab, J.J. Gu, M. Si, P.D. Ye, and M.A. Alam
Source: 2014 International Electron Devices Meeting (IEDM): December 15-17, 2014. PDF

Towards High-Performance Two-Dimensional Black Phosphorus Optoelectronic Devices: the Role of Metal Contacts
Author(s): Yexin Deng, Nathan J. Conrad, Zhe Luo, Han Liu, Xianfan Xu, and Peide D. Ye
Source: 2014 International Electron Devices Meeting (IEDM): December 15-17, 2014. PDF

Chloride Molecular Doping Technique on 2D Materials: WS2 and MoS2
Author(s): Lingming Yang, Kausik Majumdar, Han Liu, Yuchen Du, Heng Wu, Michael Hatzistergos, P.Y. Hung, Robert Tieckelmann, Wilman Tsai, Chris Hobbs, Peide D. Ye
Source: Nano Letters 2014, 14, 6275. PDF

Temporal and Thermal Stability of Al2O3-passivated Phosphorene MOSFETs
Author(s): Xi Luo, Yaghoob Rahbarihagh, James C.M. Hwang, Han Liu, Yuchen Du, and Peide D. Ye
Source: IEEE Electron Devices Letters 35 (10) 2014. PDF

Semiconducting Black Phosphorus: Synthesis, Transport Properties and Electronic Applications
Author(s): Han Liu, Yuchen Du, Yexin Deng, and Peide D. Ye
Source: Chemical Society Review 2014, DOI:10.1039/c4cs00257a PDF (cite this: Chem. Soc. Rev., 2015, 44, 2732)

Device Perspective for Black Phosphorus Field-Effect Transistors: Contact Resistance, Ambipolar Behavior, and Scaling
Author(s): Yuchen Du, Han Liu, Yexin Deng, and Peide D. Ye
Source: ACS Nano Vol.8, No.10, 10035-10042, 2014. PDF

Contact research strategy for emerging molybdenum disulfide and other two-dimensional field-effect transistors
Author(s): Yuchen Du, Lingming Yang, Han Liu, and Peide D. Ye
Source: APL Materials 2, 092510, 2104. PDF

Two-Dimensional TaSe2 Metallic Crystals: Spin-Orbit Scattering Length and Breakdown Current Density
Author(s): Adam T. Neal, Yuchen Du, Han Liu, and Peide D. Ye
Source: ACS Nano Vol.8, No.9, 9137-9142, 2014. PDF

Black Phosphorus-Monolayer MoS2 van der Waals Heterojunction p-n Diode
Author(s): Yexin Deng, Zhe Luo, Nathan J. Conrad, Han Liu, Yongji Gong, Sina Najmaei, Pulickel M. Ajayan, Jun Lou, Xianfan Xu and Peide D. Ye
Source: ACS Nano Vol. 8, No. 8, 8292-8299, 2014.  PDF  July 14, 2014 DOI:10.1021/nn5027388

The Effect of Dielectric Capping on Few-Layer Phosphorene Transistors: Tuning the Schottky Barrier Heights
Author(s): Han Liu, Adam T. Neal, Mengwei Si, Yuchen Du, and P.D. Ye
Source: IEEE Electron Devices Letters 35 (7): DOI 10.1109/LED.2014.2323951 2014.  PDF

Theoretical Study on the Oxidation Mechanism and Dynamics of Zigzag Graphene Nanoribbon Edge by Oxygen and Ozone
Author(s): Kun Xu and Peide D. Ye
Source: The Journal of Physical Chemistry C 2014, 118, 10400-10407. PDF

Measurement of In-Plane Thermal Conductivity of Ultrathin Films using Micro-Raman Spectroscopy
Author(s): Zhe Luo, Han Liu, Bryan T. Spann, Yanhui Feng, Peide D. Ye, Yong P. Chen, and Xianfan Xu
Source: Nanoscale and Microscale Thermophysical Engineering, 18: 183-193, 2014. PDF

Electron Spin Magnetism of Zigzag Graphene Nanoribbon Edge States
Author(s): Kun Xu and Peide D. Ye
Source: APPLIED PHYSICS LETTERS 104, 163104 (2014). PDF

Electronic Transport in InGaAs/Al2O3 nFinFETs
Author(s): Shengwei Li, Yaodong Hu, Yanqing Wu, Daming Huang, Peide D. Ye, and Ming-Fu Li
Source: Semiconductor Science and Technology 29, 075014, 2014. PDF

Origin and Implications of Hot Carrier Degradation of Gate-all-around Nanowire III-V MOSFETs
Author(s): SangHoon Shin, M.A. Wahab, M. Masuduzzaman, Mengwei Si, J.J. Gu, P.D. Ye, and M.A. Alam
Source: 2014 IEEE International Reliability Physics Symposium (IRPS) 4A.3.1 PDF

(Late News) High-Performance MoS2 Field-Effect Transistors Enabled by Chloride Doping: Record Low Contact Resistance (0.5kWum) and Record High Drain Current (460 uA/um)
Author(s): L.M. Yang, K. Majumdar, Y.C. Du, H. Liu, H. Wu, M. Hatzistergos, P.Y. Hung, R. Tiekelmann, W. Tsai, C. Hobbs, P.D. Ye
Source: Symposia on VLSI Technology and Circuits (VLSI 2014), pp.192-193, 2014. PDF

Ge CMOS Technology: Breakthroughs of nFETs (Imax=714 mA/mm, gmax=590mS/mm) by recessed channel and S/D
Author(s): H. Wu, M.W. Si, L. Dong, J.Y. Zhang, and P.D. Ye
Source: Symposia on VLSI Technology and Circuits (VLSI 2014), pp.76-77, 2014. PDF

III-V CMOS Devices and Circuits with High-Quality Atomic-Layer-Epitaxial La2O3/GaAs Interface
Author(s): L. Dong, X.W. Wang, J.Y. Zhang, X.F. Li, X.B. Lou, N. Conrad, H. Wu, R.G. Gordon, and P.D. Ye
Source: Symposia on VLSI Technology and Circuits (VLSI 2014), pp.50-51, 2014. PDF

MoS2 Field-Effect Transistors With Graphene/Metal Heterocontacts
Author(s): Yuchen Du, Lingming Yang, Jingyun Zhang, Han Liu, Kausik Majumdar, Paul D. Kirsch, and P.D. Ye
Source: IEEE Electron Devices Letters 35 (5): 599-601, 2014 PDF

Phosphorene: An unexplored 2D Semiconductor with a High Hole Mobility
Author(s): Han Liu, Adam T. Neal, Zhen Zhu, Zhe Luo, Xianfan Xu, David Tomanek, and Peide D. Ye
Source: ACS Nano Vol. 8, No. 4, 4033-4041, 2014. DOI: 10.1021/nn501226z PDF

2013

Switching Mechanism in Single-Layer Molybdenum Disulfide Transistors: an Insight into Current Flow across Schottky Barriers
Author(s): Han Liu, Mengwei Si, Yexin Deng, Adam T. Neal, Yuchen Du, Sina Najmaei, Pulickel M. Ajayan, Jun Lou and Peide D. Ye
Source: ACS Nano Vol.8, No. 1, 1031-1038, 2014. DOI: 10.1021/nl400778q PDF

Impact of Nanowire Variability on Peformance and Reliability of Gate-all-around III-V MOSFETs
Author(s): S.H. Shin, M. Masuduzzaman, J.J. Gu, M.A. Wahab, N. Conrad, M. Si, P.D. Ye, and M.A. Alam
Source: 2013 International Electron Devices Meeting (IEDM): Page 188-191, December 9-11, 2013. PDF

Fundamentals in MoS2 Transistors: Dielectric, Scaling and Metal Contacts
Author(s): H. Liu, A.T. Neal, Y. Du, P. D. Ye
Source: ECS Transactions, vol. 58, no.7, pp 203-208, October 2013. PDF

Performance and Variability Studies of InGaAs Gate-all-around Nanowire MOSFETs
Author(s): Nathan Conrad, SangHong Shin, Jiangjiang Gu, Mengwei SI, Heng Wu, Muhammad Masuduzzaman, Mohammad A. Alam, and Peide D. Ye
Source: IEEE Transactions on Devices and Materials Reliability, October 2013. PDF

Reliability of High Mobility InGaAs Channel n-MOSFETs udner BTI Stress
Author(s): Ming-Fu Li, Guangfan Jiao, Yaodong Hu,  Yi Xuan,  Daming Huang, and Peide D. Ye
Source: IEEE Transactions on Devices and Materials Reliability, October 2013. PDF

Extraction of Channel Electron Effective Mobility in InGaAs/Al2O3 n-FinFETs
Author(s): Yaodong Hu, Shengwei Li, Guangfan Jiao, Y.Q. Wu, Daming Huang, Peide D. Ye, and Ming-Fu Li
Source: IEEE Transactions on Nanotechnology 12 (5), 806, September 2013. PDF

Molecular Doping of Multilayer MoS2 Field-Effect Transistors: Reduction in Sheet and Contact Resistances
Author(s): Yuchen Du, Han Liu, Adam T. Neal, Mengwei Si and P.D. Ye
Source: IEEE Electron Devices Letters 34 (8): PDF

Magneto-transport in MoS2: Phase Coherence, Spin-Orbit Scattering, and the Hall Factor
Author(s): Adam T. Neal, Han Liu, Jiangjiang Gu and Peide D. Ye
Source: ACS Nano vol. 7, no. 8, 7077-7082, 2013 DOI:10.1021/nn402377g. PDF

Statistical Study of Deep Submicron Dual-Gated Field-Effect Transistors on Monolayer Chemical Vapor Deposition Molybdenum Disulfide Films
Author(s): Han Liu, Mengwei Si, Sina Najmaei, Adam T. Neal, Yuchen Du, Pulickel M. Ajayan, Jun Lou and Peide D. Ye
Source: Nano Letters DOI: 10.1021/nl400778q PDF

A Distributive-Transconductance Model for Border Traps in III-V/High-k MOS Capacitors
Author(s): Chen Zhang, Min Xu, Peide D. Ye, and Xiuling Li
Source: IEEE Electron Devices Letters 34 (6): 735-737 June 2013. PDF

0.2-um AlGaN/GaN High Electron-Mobility Transistors with Atomic Layer Deposition Al2O3 Passivation
Author(s): Dong Xu, K. Chu, J. Diaz, W. Zhu, R. Roy, L. Pleasant, K. Nichols, P.C. Chao, M. Xu, and Peide D. Ye
Source: IEEE Electron Devices Letters 34 (6): 744-746 June 2013. PDF

Variability Improvement by Interface Passivation and EOT Scaling of InGaAs Nanowire MOSFETs
Author(s): Jiangjiang J. Gu, Xinwei Wang, Heng Wu, Roy G. Gordon, and Peide D. Ye
Source: IEEE Electron Devices Letters 34 (5): pp. 608-610 May 2013. PDF

GaAs Enhancement-Mode NMOSFETs Enabled by Atomic Layer Epitaxial La1.8Y0.2O3 as Dielectric
Author(s): L. Dong, X.W. Wang, J.Y. Zhang, X.F. Li, R.G. Gordon, and P.D. Ye
Source: IEEE Electron Devices Letters 34 (4): pp 487-489  April 2013. PDF

Effects of forming gas anneal on ultrathin InGaAs nanowire metal-oxide-semiconductor field-effect transistors
Author(s): Mengwei Si, Jiangjiang J. Gu, Xinwei Wang, Jiayi Shao, Xuefei Li, Michael J. Manfra, Roy G. Gordon and Peide D. Ye
Source: APPLIED PHYSICS LETTERS 102 (9): Art. No. 093505, March 5, 2013. PDF

Laser direct synthesis of graphene on quartz
Author(s): Dapeng Wei, James I. Mitchell, Chookiat Tansarawiput, Woongsik Nam, Minghao Qi, Peide D. Ye, and Xianfan Xu
Source: Carbon 53 (2003) 374-379. PDF

Band offset determination of atomic-layer-deposited Al2O3 and HfO2 on InP by internal photoemission and spectroscopic ellipsometry
Author(s): K. Xu, H. Sio, O.A. Kirlillov, L. Dong, Min Xu, P.D. Ye, D. Gundlach, and N.V. Nguyen
Source: Journal of Applied Physics 113 (1): Art. No. 024504, January 9, 2013. PDF

New insights in the passivation of high-k/InP through interface characterization and metal-oxide-semiconductor field effect transistor demonstration: Impact of crystal orientation
Author(s): Min Xu, Jiangjiang Gu, Chen Wang, D.M. Zhernokletov, R.M. Wallace, and P.D. Ye
Source: Journal of Applied Physics 113 (1): Art. No. 013711, January 4, 2013. PDF

2012

Heteroepitaxy of La2O3 and La2-xYxO3 on GaAs (111)A by Atomic Layer Deposition: Achieving Low Interface Trap Density
Author(s): Xinwei Wang, Lin Dong, Jingyun Zhang, Yiqun Liu, Peide D. Ye, and Roy G. Gordon
Source: Nano Letters December 31 2012 DOI: 10.1021/nl3041349 PDF

Direct Measurement of Dirac Point Energy at the Graphene/Oxide Interface
Author(s): Kun Xu, Caifu Zheng, Qin Zhang, Rusen Yan, Peide D. Ye, Kang Wang, Alan C. Seabaugh, Huili Grace Xing, John S. Suehle, Curt A. Richter, Davide J. Gundlach, and N.V. Nguyen
Source: Nano Letters December 17 2012 DOI: 10.1021/nl303669w PDF

20-80nm Channel Length InGaAs Gate-all-around Nanowire MOSFETs with EOT=1.2nm and Lowest SS=63mV/dec
Author(s): J.J. Gu, X.W. Wang, H. Wu, J. Shao, A.T. Neal, M.J. Manfra, R.G. Gordon and P.D. Ye
Source: 2012 International Electron Devices Meeting (IEDM): Page 633-636, December 5-7, 2012. PDF

III-V Gate-all-around Nanowire MOSFET Process Technology: From 3D to 4D
Author(s): J.J. Gu, X.W. Wang, J. Shao, A.T. Neal, M.J. Manfra, R.G. Gordon and P.D. Ye
Source: 2012 International Electron Devices Meeting (IEDM): Page 529-532, December 5-7, 2012. PDF

Channel Length Scaling of MoS2 MOSFETs
Author(s): Han Liu, Adam T. Neal and Peide D. Ye
Source: ACS Nano 6 (10): 8563-8569 September 07 2012. PDF

MoS2 Nanoribbon Transistors: Transition from Depletion Mode to Enhancement Mode by Channel-Width Trimming
Author(s): Han Liu, JiangJiang Gu and Peide D. Ye
Source: IEEE Electron Devices Letters 33 (9): pp. 1273-1275, September 2012. PDF

Electron band alignment at the interface of (100)InSb with atomic-layer-deposited Al2O3
Author(s): H.Y. Chou, V.V. Afanas'ev, M. Houssa, A. Stesmans, Lin Dong, and P.D. Ye
Source: APPLIED PHYSICS LETTERS 101 (14): Art. No. 082114, August 24, 2012. PDF

Frequency response of LaAlO3/SrTiO3 all-oxide field-effect transistors
Author(s): Qingmin Liu, Lin Dong, Yiqun Liu, Roy Gordon, Peide D. Ye, Parrick Fay, and Alan Seabaugh
Source: Solid State Electronics, vol. 76, pp 1-4, July 2012. PDF

Size-Dependent-Transport Study of In0.53Ga0.47As Gate-All-Around Nanowire MOSFETs: Impact of Quantum Confinement and Volume Inversion
Author(s): Jiangjiang J. Gu, Heng Wu, Yiqun Liu, Adam T. Neal, Roy G. Gordon, and Peide D. Ye
Source: IEEE Electron Devices Letters 33 (7): Art. No. 967 July 2012. PDF

Experimental Investigation of Border Trap Generation in InGaAs nMOSFETs With Al2O3 Gate Dielectric Under PBTI Stress
Author(s): Guangfan Jiao, Chengjun Yao, Yi Xuan, Daming Huang, Peide D. Ye, and Ming-Fu Li
Source: IEEE Transactions on Electron Devices 59 (6), 1661, June 2012. PDF

Sub-100nm Non-planar 3D InGaAs MOSFETs: Fabrication and Characterization
Author(s): Jiangjiang J. Gu and Peide D. Ye
Source: ECS Transactions, vol. 45, no.4, pp 217-229, April 2012. PDF

Effects of Channel Hot Carrier Stress on III-V Bulk Planar MOSFETs (Late News)
Author(s): N. Wrachien, A. Cester, D. Bari, E. Zanoni, G. Meneghesso, Y.Q. Wu, and P.D. Ye
Source: 2012 IEEE International Reliability Physics Symposium (IRPS): Page 3D.4.1-4.7, April 15-19, 2012. PDF

The integration of high-k dielectric on two-dimensional crystals by atomic layer deposition
Author(s): Han Liu, Kun Xu, Xujie Zhang, and Peide D. Ye
Source: APPLIED PHYSICS LETTERS 100 (15): Art. No. 152115, April 13, 2012. PDF

Interface barriers at the interfaces of polar GaAs (111) faces with Al2O3
Author(s): H.Y. Chou, E. O'Connor, P.K. Hurley, V.V. Afanas'ev, M. Houssa, A. Stesmans, P.D. Ye, and S.B. Newcomb
Source: APPLIED PHYSICS LETTERS 100 (14): Art. No. 141602, April 2, 2012. PDF

MoS2 Dual-Gate MOSFET with Atomic-Layer-Deposited Al2O3 as Top-Gate Dielectric
Author(s): Han Liu and Peide D. Ye
Source: IEEE Electron Devices Letters 33 (4): Art. No. 546 April 2012. PDF

Magneto-Transport on Epitaxial Graphene (Book Chapter)
Author(s): Peide D. Ye, Michael Capano, Tian Shen, Yanqing Wu, and Michael L. Bolen
Source: Graphene Nanoelectronics, pp. 161-188, Springer-Verlag Berlin Heidelberg 2012. PDF

GaSb Metal-Oxide-Semiconductor Capacitors with Atomic-Layer-Deposited HfAlO as Gate Dielectric
Author(s): Chen Wang, Min Xu, Jiangjiang Gu, David Wei Zhang, and Peide D. Ye
Source: Electrochemical and Solid-State Letters 15 (3) H51-54 (2012). PDF

"Zero" Drain-Current Drift of Inversion-Mode NMOSFET on InP (111)A Surface
Author(s): Chen Wang, Min Xu, Robert Colby, David Wei Zhang, and Peide D. Ye
Source: Electrochemical and Solid-State Letters 15 (2) H27-30 (2012). PDF

Quantum-Hall plateau-plateau transition in top-gated epitaxial graphene grown on SiC (0001)
Author(s): T. Shen, A.T. Neal, M.L. Bolen, J.J. Gu, L.W. Engel, M.A. Capano, and P.D. Ye
Source: Journal of Applied Physics 111 (1): Art. No. 013716, January 13, 2012. PDF

2011

First Experimental Demonstration of Gate-all-around III-V MOSFETs by Top-down Approach
Author(s): J.J. Gu, Y.Q. Liu, Y.Q. Wu, R. Colby, R.G. Gordon and P.D. Ye
Source: 2011 International Electron Devices Meeting (IEDM): Page 769-772, December 5-7, 2011. PDF

Positive Bias Temperature Instability Degradation of InGaAs n-MOSFETs with Al2O3 Gate Dielectric
Author(s): G.F. Jiao, W. Cao, Y. Xuan, D.M. Huang, P.D. Ye, and M.F. Li
Source: 2011 International Electron Devices Meeting (IEDM): Page 606-609, December 5-7, 2011. PDF

Effects of (NH4)2S passivation on the off-state performance of 3-dimensional InGaAs metal-oxide-semiconductor field-effect transistors
Author(s): J.J. Gu, A.T. Neal and P.D. Ye
Source: APPLIED PHYSICS LETTERS 99 (15): Art. No. 152113, October 14, 2011. PDF

III-V-on-nothing metal-oxide-semiconductor field-effect transistors enabled by top-down nanowire release process: Experiment and simulation
Author(s): J.J. Gu, O. Koybasi, Y.Q. Wu and P.D. Ye
Source: APPLIED PHYSICS LETTERS 99 (11): Art. No. 112113, September 15, 2011. PDF

Atomic-layer-deposited Al2O3 on Bi2Te3 for topological insulator field-effect transistors
Author(s): Han Liu and P.D. Ye
Source: APPLIED PHYSICS LETTERS 99 (5): Art. No. 052108, August 4, 2011. PDF

Schottky-barrier height modulation of metal/In0.53Ga0.47As interfaces by insertion of atomic-layer deposited ultrathin Al2O3
Author(s): Runsheng Wang, Min Xu, Peide D. Ye, Ru Huang
Source: J. Vac. Sci. Technol. B 29 (4), 041206, August 2, 2011. PDF

Interface chemistry of oxides on InxGa1-xAs and implications for MOSFET application (Review)
Author(s): C.L. Hinkle, E.M. Vogel, Peide D. Ye, R.M. Wallace
Source: Current Opinion in Solid State and Materials Science 15, 188-207, July 2011. PDF

Analysis of Electron Mobility in Inversion-Mode Al2O3/InxGa1-xAs MOSFETs
Author(s): Weike Wang, James C.M. Hwang, Yi Xuan, and Peide D. Ye
Source: IEEE Transactions on Electron Devices 58 (7), 1972, July 2011. PDF

GaSb Inversion-Mode PMOSFETs With Atomic-Layer-Deposited Al2O3 as Gate Dielectric
Author(s): Min Xu, Runsheng Wang, and Peide D. Ye
Source: IEEE Electron Devices Letters 32 (7): Art. No. 488 July 2011. PDF

Selective Contact Anneal Effects on Indium Oxide Nanowire Transistors using Femtosecond Laser
Author(s): Seongmin Kim, Sunkook Kim, Pornsak Srisungsitthisunti, Chunghun Lee, Min Xu, Peide D. Ye, Minghao Qi, Xianfan Xu, Chongwu Zhou, Sanghyun Ju, and David B. Janes
Source: Journal of Physical Chemistry C  115, 17147-17153, July 29, 2011. PDF

Effects of Positive and Negative Stresses on III-V MOSFETs with Al2O3 Gate Dielectric
Author(s): N. Wrachien, A. Cester, Y.Q. Wu, P.D. Ye, E. Zanoni, and G. Meneghesso
Source: IEEE Electron Devices Letters 32 (4): Art. No. 488 April 2011. PDF

Effects of gate-last and gate-first process on deep submicron inversion-mode InGaAs n-channel metal-oxide-semiconductor field effect transistors
Author(s): J.J. Gu, Y.Q. Wu and P.D. Ye
Source: JOURNAL OF APPLIED PHYSICS 109 (5): Art. No. 053709, 9 March 2011. PDF

2010

Atomic-layer-deposited LaAlO3/SrTiO3 all oxide field-effect transistors
Author(s): L. Dong, Y.Q. Liu, M. Xu, Y.Q. Wu, R. Colby, E.A. Stach, R. Droopad, R.G. Gordon and P.D. Ye
Source: 2010 International Electron Devices Meeting (IEDM): Page 588-591, December 6-8, 2010.PDF

Heteroepitaxy of single-crystal LaLuO3 on GaAs (111)A by atomic layer deposition
Author(s): Y.Q. Liu, M. Xu, J. Heo, P.D. Ye, and R.G. Gordon
Source: APPLIED PHYSICS LETTERS 97 (16): Art. No. 162910, October 21, 2010. PDF

Atomic-Layer-Deposited High-k Dielectric Integration on Epitaxial Graphene
Author(s): P.D. Ye, A.T. Neal, T. Shen, J.J. Gu, M.L. Bolen, and M.A. Capano
Source: ECS Transactions, vol. 33, no.3, pp 459-466, October 2010. PDF

Empirical Study of Hall Bars on Few-Layer Graphene on C-Face 4H-SiC
Author(s): M.L. Bolen, T. Shen, J.J. Gu, R. Colby, E.A. Stach, P.D. Ye, and M.A. Capano
Source: Journal of ELECTRONIC MATERIALS DOI:10.1007/s11664-010-1375-1 September 14, 2010. PDF

High performance atomic-layer-deposited LaLuO3/Ge-on-insulator p-channel metal-oxide-semiconductor field-effect transistor with thermally grown GeO2 as interfacial passivation layer
Author(s): J.J. Gu, Y.Q. Liu, M. Xu, G.K. Celler, R.G. Gordon, and P.D. Ye
Source: APPLIED PHYSICS LETTERS 97 (1): Art. No. 012106, July 8, 2010. PDF

Theoretical Study of Atomic Layer Deposition Reaction Mechanism and Kinetics for Aluminum Oxide Formation at Graphene Nanoribbon Open Edges
Author(s): Kun Xu and Peide D. Ye
Source: Journal of Physical Chemistry C, vol. 114, no. 23, pp 10505-10511, May 25 2010. PDF

Atomic-Layer Deposited High-k/III-V Metal-Oxide-Semiconductor Devices and Correlated Empirical Model
Author(s): Peide D. Ye, Yi Xuan, Yanqing Wu, and Min Xu
Source: "Fundamentals of III-V Semiconductor MOSFETs", S. Oktyabrsky, P.D. Ye (eds.), Springer 2010, pp. 173-193. PDF

Degradation of III-V inversion-type enhancement-mode MOSFETs
Author(s): N. Wrachien, A. Cester, E. Zanoni, G. Meneghesso, Y.Q. Wu, and P.D. Ye
Source: 2010 IEEE International Reliability Physics Symposium (IRPS): Page 536-542, May 2-6, 2010. PDF

ALD High-k as a Common Gate Stack Solution for Nano-electronics
Author(s): P.D. Ye, J.J. Gu, Y.Q. Wu, M. Xu, Y. Xuan, T. Shen and A.T. Neal
Source: ECS Transactions, vol. 28, no.2, pp 51-68, April 2010. PDF

Scaling of InGaAs MOSFETs into deep-submicron
Author(s): Yanqing Wu and Peide D. Ye
Source: ECS Transactions, vol. 28, no.5, pp 185-201, April 2010. PDF

Charge-pumping characterization of interface traps in Al2O3/In0.75Ga0.25As metal-oxide-semiconductor field-effect transistors
Author(s): W. Wang, J. Deng, J.C.M. Hwang, Y. Xuan, Y. Wu, and P.D. Ye
Source: APPLIED PHYSICS LETTERS 96 (7): Art. No. 072102, February 16, 2010. PDF

Band offsets of Al2O3/InxGa1-xAs (x=0.53 and 0.75) and the effects of postdeposition annealing
Author(s): N.V. Nguyen, M. Xu, O.A. Kirillov, P.D. Ye, C. Wang, K. Cheung, and J.S. Suehle
Source: APPLIED PHYSICS LETTERS 96 (5): Art. No. 052107, February 2, 2010. PDF

2009

High Performance Deep-Submicron Inversion-Mode InGaAs MOSFETs with Maximum Gm exceeding 1.1 mS/um: New HBr Pretreatment and Channel Engineering
Author(s): Y.Q. Wu, M. Xu, R.S. Wang, O. Koybasi and P.D. Ye
Source: 2009 International Electron Devices Meeting (IEDM): Page 323-326, December 7-9, 2009. PDF

First Experimental Demonstration of 100 nm Inversion-mode InGaAs FinFET through Damage-free Sidewall Etching
Author(s): Y.Q. Wu, R.S. Wang, T. Shen, J.J. Gu and P.D. Ye
Source: 2009 International Electron Devices Meeting (IEDM): Page 331-334, December 7-9, 2009. PDF

New Insight into Fermi-level Unpinning on GaAs: Impact of Different Surface Orientations
Author(s): M. Xu, K. Xu, R. Contreras, M. Milojevic, T. Shen, O. Koybasi, Y.Q. Wu, R.M. Wallace and P.D. Ye
Source: 2009 International Electron Devices Meeting (IEDM): Page 865-868, December 7-9, 2009. PDF

Observation of quantum Hall effect in gated epitaxial graphene grown on SiC (0001)
Author(s): T. Shen, J.J. Gu, M. Xu, Y.Q. Wu, M.L. Bolen, M.A. Capano, L.W. Engel, and  P.D. Ye
Source: APPLIED PHYSICS LETTERS 95 (17): Art. No. 172105 October 28, 2009. PDF

0.8-V Supply Voltage Deep-Submicrometer Inversion-Mode In0.75Ga0.25As MOSFET
Author(s): Y.Q. Wu, W.K. Wang, O. Koybasi, D.N. Zakharov, E.A. Stach, S. Nakahara, J.C.M. Hwang and  P.D. Ye
Source: IEEE Electron Devices Letters 30 (7): Art. No. 700 July 2009. PDF

Metal-oxide-semiconductor field-effect transistors on GaAs (111)A surface with atomic-layer-deposited Al2O3 as gate dielectrics
Author(s): M. Xu, Y.Q. Wu, O. Koybasi, T. Shen, and  P.D. Ye
Source: APPLIED PHYSICS LETTERS 94 (21): Art. No. 212104 May 28, 2009. PDF

Anomalous triple junction surface pits in nanocrystalline zirconia thin films and their relationship to triple junction energy
Author(s): Hakkwan Kim, Yi Xuan, Peide D. Ye, Raghavan Narayanan, Alexander H. King
Source: Acta Materialia 57, 3662-3670 (2009). PDF

Inversion-mode InxGa1-xAs MOSFETs (x=0.53,0.65,0.75) with atomic-layer deposited high-k dielectrics
Author(s): P.D. Ye, Y. Xuan, Y.Q. Wu and M. Xu
Source: ECS Transactions, vol. 19, no.2, pp 605-614, May 2009. PDF 

Characterization of Parylene-N as Flexible Substrate and Passivation Layer for Microwave and Millimeter-Wave Integrated Circuits
Author(s): H. Sharifi, R.R. Lahiji, H.C. Lin, P.D. Ye, L. P.B. Katehi and  S. Mohammadi
Source: IEEE Transactions on Advanced Packaging, Vol.32, No.1, 84-92, 2009. PDF

Fully Transparent Thin-Film Transistors Based on Aligned Carbon Nanotube Arrays and Indium Tin Oxide Electrodes
Author(s): S. Kim, S. Ju, H. Back, Y. Xuan, P.D. Ye, M. Shim, D.B. Janes, and  S. Mohammadi
Source: Advanced Materials 21 (5): 564, 2009. PDF

Capture and alignment of phi29 viral particles in sub-40 nanometer porous alumina membranes
Author(s): Jeong-Mi Moon, Demir Akin, Yi Xuan, Peide D. Ye, Peixuan Guo, and Rashid Bashir
Source: Biomed Microdevices Vol. 11, Issue 1, pp. 135-142 Feb. 2009. PDF

2008

High Performance Surface Channel In-rich In0.75Ga0.25As MOSFETs with ALD High-k as Gate Dielectric
Author(s): Y. Xuan, T. Shen, M. Xu, Y.Q. Wu and P.D. Ye
Source: 2008 International Electron Devices Meeting (IEDM): Page 371-374, December 15-17, 2008. PDF

Multi-probe Interface Characterization of In0.65Ga0.35As/Al2O3 MOSFET
Author(s): D. Varghese, Y. Xuan, Y.Q. Wu, T. Shen, P.D. Ye, and M.A. Alam
Source: 2008 International Electron Devices Meeting (IEDM): Page 379-382, December 15-17, 2008. PDF

Atomic-layer-deposited Al2O3/GaAs metal-oxide-semiconductor field-effect transistor on Si substrate using aspect ratio trapping technique
Author(s): Y.Q. Wu, M. Xu, P.D. Ye, Z. Cheng, J. Li, J.S. Park, J. Hydrick, J. Bai, M. Carroll, J.G. Fiorenza, and A. Lochtefeld
Source: APPLIED PHYSICS LETTERS 93 (24): Art. No. 242106 December 17, 2008. PDF

Magnetoconductance oscillations in graphene antidot arrays
Author(s): T. Shen, Y.Q. Wu, M.A. Capano, L.P. Rokhinson. L.W. Engel, and P.D. Ye
Source: APPLIED PHYSICS LETTERS 93 (8): Art. No. 122102 September 22, 2008. PDF

Band offsets of atomic-layer-deposited Al2O3 on GaAs and the effects of surface treatment
Author(s): N.V. Nguyen, O.A. Kirillov, W. Jiang, W. Wang, J.S. Suehle, P.D. Ye, Y. Xuan, N. Goel, K.-W. Choi, W. Tsai, and S. Sayan
Source: APPLIED PHYSICS LETTERS 93 (8): Art. No. 082105 August 27, 2008. PDF

S passivation of GaAs and band bending reduction upon atomic layer deposition of HfO2/Al2O3 nanolaminates
Author(s): F.S. Aguirre-Tostado, M. Milojevic, K.J. Choi, H.C. Kim, C.L. Hinkle, E.M. Vogel, J. Kim, T. Yang, Y. Xuan, P.D. Ye, and R.M. Wallace
Source: APPLIED PHYSICS LETTERS 93 (6): Art. No. 061907 August 13, 2008. PDF

Beyond Silicon's Elemental Logic (Feature Article)
Author(s): Peide D. Ye
Source: IEEE Spectrum, 38-43, September 2008. PDF

Single-walled carbon nanotube transistors fabricated by advanced alignment techniques utilizing CVD growth and dielectrophoresis
Author(s): S. Kim, Y. Xuan, P.D. Ye, S. Mohammadi, and S.W. Lee
Source: Solid-State Electronics 52: 1260-1263, 9 July 2008. PDF

Main determinants for III-V metal-oxide-semiconductor field-effect-transistors (invited)
Author(s): Peide D. Ye
Source: J. Vac. Sci. Technol. A 26 (4): Art. No. 697 June 30, 2008. PDF

Inversion capacitance-voltage studies on GaAs metal-oxide-semiconductor structure using transparent conducting oxide as metal gate
Author(s): T. Yang, Y. Liu, P.D. Ye, Y. Xuan, H.Pal, and M.S. Lundstrom
Source: APPLIED PHYSICS LETTERS 92 (25): Art. No. 252105 June 27, 2008. PDF

Properties of InAs metal-oxide-semiconductor structures with atomic-layer-deposited Al2O3 dielectric
Author(s): Ning Li, Eric S. Harmon, James Hyland, David B. Salzman, T.P. Ma, Yi Xuan, and  P.D. Ye
Source: APPLIED PHYSICS LETTERS 92 (14): Art. No. 143507 April 11, 2008. PDF

InGaAs revolutionizes III-V MOSFETs (Feature Article)
Author(s): Peide D. Ye
Source: Compound Semiconductor, 29-31, April 2008. PDF

High-Performance Inversion-Type Enhancement-Mode InGaAs MOSFET With Maximum Drain Current Exceeding 1 A/mm
Author(s): Y. Xuan, Y.Q. Wu, and  P.D. Ye
Source: IEEE Electron Devices Letters 29 (4): Art. No. 294 April 2008. PDF

Top-gated graphene field-effect-transistors formed by decomposition of SiC
Author(s): Y.Q. Wu, P.D. Ye, M.A. Capano, Y. Xuan, Y. Sui, M. Qi, J.A. Cooper, T. Shen, D. Pandey, G. Prahash, and R. Reifenberger
Source: APPLIED PHYSICS LETTERS 92 (9): Art. No. 092102 March 3, 2008. PDF

Processing and Characterization of III-V Compound Semiconductor MOSFETs Using Atomic Layer Deposited Gate Dielectrics (Book Chapter)
Author(s): P.D. Ye, G.D. Wilk and M.M. Frank
Source: Advanced Gate Stacks for High-Mobility Semiconductors, ISSN 1437-0387, Springer Berlin Heidelberg, January 01, 2008. PDF

Atomic-layer-deposited nanostructures for graphene-based nanoelectronics
Author(s): Yi Xuan, Y.Q. Wu, T. Shen, M. Qi, M.A. Capano, J.A. Cooper, and  P.D. Ye
Source: APPLIED PHYSICS LETTERS 92 (1): Art. No. 013101 January 2, 2008. PDF

2007

High Performance submicron inversion-type enhancement-mode InGaAs MOSFETs with ALD Al2O3, HfO2, and HfAlO as gate dielectrics
Author(s): Y. Xuan, Y.Q. Wu, T. Shen, T. Yang and P.D. Ye
Source: 2007 International Electron Devices Meeting (IEDM): Page 637-640, December 10-12, 2007. PDF

Substrate engineering for high-performance surface-channel III-V metal-oxide-semiconductor field-effect transistors
Author(s): Yi Xuan, P.D. Ye, and Tian Shen
Source: APPLIED PHYSICS LETTERS 91 (23): Art. No. 232107 December 5, 2007. PDF

Enhancement-mode GaAs metal-oxide-semiconductor high-electron-mobility transistors with atomic layer deposited Al2O3 as gate dielectric
Author(s): H.C. Lin, T. Yang, H. Sharifi, S.K. Kim, Y. Xuan, T. Shen, S. Mohammadi, and P.D. Ye
Source: APPLIED PHYSICS LETTERS 91 (21): Art. No. 212101 November 19 2007. PDF

Submicrometer Inversion-Type Enhancement-Mode InGaAs MOSFET With Atomic-Layer-Deposited Al2O3 as Gate Dielectric
Author(s): Y. Xuan, Y.Q. Wu, H.C. Lin, T. Shen, and  P.D. Ye
Source: IEEE Electron Devices Letters 28 (11): Art. No. 935 November 2007. PDF

Simulation and optimization of GaN-based metal-oxide-semiconductor high-electron-mobility transistors using field-dependent drift velocity model
Author(s): W.D. Hu, X.S. Chen, Z.J. Quan, X.M. Zhang, Y. Huang, C.S. Xia, W. Lu, P.D. Ye
Sources: Journal of Applied Physics 102 (3), 034502, August 2, 2007. PDF

Interface studies of GaAs metal-insulator-semiconductor structures using atomic-layer-deposited HfO2/Al2O3 nanolaminate gate dielectric
Author(s): T. Yang, Y. Xuan, D. Zemlyanov, T. Shen, Y.Q. Wu, J.M. Woodall, P.D. Ye, F.S. Aguirre-Tostado, M. Milojevic, S. McDonnell, and R.M. Wallace
Source: APPLIED PHYSICS LETTERS 91 (9): Art. No. 142122 October 5 2007. PDF

Direct-current and radio-frequency characterizations of GaAs metal-insulator-semiconductor field-effect-transistors enabled by self-assembled nanodielectrics
Author(s): H.C. Lin, S.K. Kim, D. Chang, Y. Xuan, S. Mohammadi, P.D. Ye, G. Lu, A. Facchetti, and T.J. Marks
Source: APPLIED PHYSICS LETTERS 91 (9): Art. No. 092103 August 27 2007. PDF

Elastomeric Nanoparticle Composites Covalently Bound to Al2O3/GaAs Surfaces
Author(s): Hyon Min Song, P.D. Ye, Albena Ivanisevic 

Source: LANGMUIR 23(18) 9472-9480 2007. PDF

Simplified surface preparation for GaAs passivation using atomic layer deposited high-k dielectrics
Author(s): Y. Xuan, H.C. Lin, P.D. Ye
Source: IEEE Transactions on Electron Devices 54 (8): Art. No. 1811 August 2007. PDF

Enhancement-mode InP n-channel metal-oxide-semiconductor field-effect transistors with atomic-layer-deposited Al2O3 dielectrics
Author(s): Y.Q. Wu, Y. Xuan, T. Shen, P.D. Ye, Z. Cheng, A. Lochtefeld
Source: APPLIED PHYSICS LETTERS 91 (2): Art. No. 022108 July 11 2007. PDF

Fabrication of fully transparent nanowire transistors for transparent and flexible electronics
Author(s): S. Ju, A. Facchetti, Y. Xuan, J. Liu, F. Ishikawa, P.D. Ye, C. Zhou, T.J. Marks, J.B. Janes
Source: NATURE NANOTECHOLOGY 2: Art. No. 378 JUNE 3 2007. PDF

Electrical measurements of voltage stressed Al2O3 / GaAs MOSFET
Author(s): Z. Tang, P.D. Ye, D. Lee, C.R. Wie
Source: Microelectronics Reliability, on-line, MARCH 2007. PDF

Atomic layer deposited Al2O3 for gate dielectric and passivation layer of single-walled carbon nanotube transistors
Author(s): S.K. Kim, Y. Xuan, P.D. Ye, S. Mohammadi, J.H. Back, M. Shim
Source: APPLIED PHYSICS LETTERS 90 (16): Art. No. 163108 APRIL 17 2007. PDF

Photo-assisted capacitance-voltage characterization of high-quality atomic-layer-deposited Al2O3/GaN metal-oxide-semiconductor structures
Author(s): Y.Q. Wu, T. Shen, P.D. Ye, G.D. Wilk
Source: APPLIED PHYSICS LETTERS 90 (14): Art. No. 143504 APRIL 2 2007. PDF

Current transport and maximum dielectric strength of atomic-layer-deposited ultrathin Al2O3 on GaAs
Author(s): Y.Q. Wu, H.C. Lin, P.D. Ye, G.D. Wilk
Source: APPLIED PHYSICS LETTERS 90 (7): Art. No. 072105 FEB 14 2007. PDF

2006

Capacitance-voltage characterization of atomic-layer-deposited Al2O3/InGaAs and Al2O3/GaAs metal-oxide-semiconductor structures
Author(s): Y. Xuan, H.C. Lin, and P.D. Ye
Source: ECS Transactions, vol.3, no.3, pp 59-69, Oct. 2006.  PDF

High-performance GaAs metal-insulator-semiconductor field-effect transistors enabled by self-assembled nanodielectrics
Author(s): Lin HC, Ye PD, Xuan Y, Lu G, Facchetti A, Marks TJ
Source: APPLIED PHYSICS LETTERS 89 (14): Art. No. 142101 OCT 2 2006  PDF

Self-heating simulation of GaN-based metal-oxide-semiconductor high-electron-mobility transistors including hot electron and quantum effects
Author(s): W.D. Hu, X.S. Chen, Z.J. Quan, C.S. Xia, W. Lu, P.D. Ye
Sources: Journal of Applied Physics 100 (7), 074501,  OCT 1 2006. PDF

Melting of a 2D quantum electron solid in high magnetic field
Author(s): Chen YP , Sambandamurthy G, Wang ZH, Lewis RM, Engel LW, Tsui DC, Ye PD, Pfeiffer LN, West KW
Source: NATURE PHYSICS 2 (7): 452-455 JUL 2006 PDF

Minority-carrier characteristics of InGaAs metal-oxide-semiconductor structures using atomic-layer-deposited Al2O3 gate dielectric
Author(s): Xuan Y, Ye PD, Lin HC, Wilk GD
Source: APPLIED PHYSICS LETTERS 89 (13): Art. No. 132103 SEP 25 2006  PDF

Current-transport properties of atomic-layer-depo sited ultrathin Al2O3 on GaAs
Author(s): Lin HC, Ye PD, Wilk GD
Source: SOLID-STATE ELECTRONICS 50 (6): 1012-1015 JUN 2006 PDF

Capacitance-voltage studies on enhancement-mode InGaAs metal-oxide-semiconductor field-effect transistor using atomic-layer-deposited Al2O3 gate dielectric
Author(s): Xuan Y, Lin HC, Ye PD, Wilk GD
Source: APPLIED PHYSICS LETTERS 88 (26): Art. No. 263518 JUN 26 2006  PDF

GaN metal-oxide-semiconductor field-effect-transistor with atomic layer deposited Al2O3 as gate dielectric
Author(s): Y.Q. Wu, P.D. Ye, G.D. Wilk and B. Yang
Sources: Materials Science and Engineering B 135, 282-284, August 20, 2006. PDF

2005

Leakage current and breakdown electric-field studies on ultrathin atomic-layer-deposited Al2O3 on GaAs
Author(s): Lin HC, Ye PD, Wilk GD
Source: APPLIED PHYSICS LETTERS 87 (18): Art. No. 182904 OCT 31 2005  PDF

Modulation of the high mobility two-dimensional electrons in Si/SiGe using atomic-layer-deposited gate dielectric
Author(s): Lai K, Ye PD, Pan W, Tsui DC, Lyon SA, Muhlberger M, Schaffler F
Source: APPLIED PHYSICS LETTERS 87 (14): Art. No. 142103 OCT 3 2005  PDF

Formation and characterization of nanometer scale metal-oxide-semiconductor structures on GaAs using low-temperature atomic layer deposition
Author(s): Ye PD, Wilk GD, Tois EE, Wang JJ
Source: APPLIED PHYSICS LETTERS 87 (1): Art. No. 013501 JUL 4 2005  PDF

Improvement of GaAs metal-semiconductor field-effect transistor drain-source breakdown voltage by oxide surface passivation grown by atomic layer deposition
Author(s): Ye PD, Wilk DG, Yang B, Chu SNG, Ng KK, Bude J
Source: SOLID-STATE ELECTRONICS 49 (5): 790-794 MAY 2005  PDF

GaN metal-oxide-semiconductor high-electron-mobility-transistor with atomic layer deposited Al2O3 as gate dielectric
Author(s): Ye PD, Yang B, Ng KK, Bude J, Wilk GD, Halder S, Hwang JCM
Source: APPLIED PHYSICS LETTERS 86 (6): Art. No. 063501 FEB 7 2005  PDF

2004

Evidence for two different solid phases of two-dimensional electrons in high magnetic fields
Author(s): Chen YP, Lewis RM, Engel LW, Tsui DC, Ye PD, Wang ZH, Pfeiffer LN, West KW
Source: PHYSICAL REVIEW LETTERS 93 (20): Art. No. 206805 NOV 12 2004 PDF

Evidence of a first order phase transition between Wigner crystal and Bubble phases of 2D electrons in higher Landau levels
Author(s): Lewis RM, Chen YP, Engel LW, Tsui DC, Ye PD, Wang ZH, Pfeiffer LN, West KW
Source: PHYSICAL REVIEW LETTERS 93 (17): Art. No. 176808 OCT 22 2004 PDF

GaAs-Based metal-oxide semiconductor field-effect transistors with Al2O3 gate dielectrics grown by atomic layer deposition
Author(s): Ye PD, Wilk GD, Yang B, Kwo J, Gossmann HJL, Frei M, Mannaerts JP, Sergent M, Hong M, Ng KK, Bude J
Source: JOURNAL OF ELECTRONIC MATERIALS 33 (8): 912-915 AUG 2004

Wigner crystallization about v=3
Author(s): Lewis RM, Chen Y, Engel LW, Tsui DC, Ye PD, Pfeiffer LN, West KW
Source: PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES 22 (1-3): 104-107 APR 2004

Measurements of the temperature dependence of the bubble phase
Author(s): Lewis RM, Chen Y, Engle LW, Ye PD, Tsui DC
Source: PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES 22 (1-3): 119-121 APR 2004

Depletion-mode InGaAs metal-oxide-semiconductor field-effect transistor with oxide gate dielectric grown by atomic-layer deposition
Author(s): Ye PD, Wilk GD, Yang B, Kwo J, Gossmann HJL, Hong M, Ng KK, Bude J
Source: APPLIED PHYSICS LETTERS 84 (3): 434-436 JAN 19 2004  PDF

GaN MOS-HEMT using atomic layer deposition Al2O3 as gate dielectric and surface passivation
Author(s): P.D. Ye, B. Yang, K.K. Ng, J. Bude, G.D. Wilk, S. Halder and J.C.M. Hwang
Source: International Journal of High Speed Electronics and Systems, Vol. 14, No.3, pp. 791-796 (2004) PDF

2003

Microwave resonance of the 2D Wigner crystal around integer Landau fillings
Author(s): Chen Y, Lewis RM, Engel LW, Tsui DC, Ye PD, Pfeiffer LN, West KW
Source: PHYSICAL REVIEW LETTERS 91 (1): Art. No. 016801 JUL 4 2003 PDF

Bilayer process for T-gates and Gamma-gates using 100-kV e-beam lithography
Author(s): Ocola LE, Tennant DM, Ye PD
Source: MICROELECTRONIC ENGINEERING 67-8: 104-108 JUN 2003

GaAs metal-oxide-semiconductor field-effect transistor with nanometerthin dielectric grown by atomic layer deposition
Author(s): Ye PD, Wilk GD, Yang B, Kwo J, Chu SNG, Nakahara S, Gossmann HJL, Mannaerts JP, Hong M, Ng KK, Bude J
Source: APPLIED PHYSICS LETTERS 83 (1): 180-182 JUL 7 2003 PDF

GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition
Author(s): Ye PD, Wilk GD, Kwo J, Yang B, Gossmann HJL, Frei M, Chu SNG, Mannaerts JP, Sergent M, Hong M, Ng KK, Bude J
Source: IEEE ELECTRON DEVICE LETTERS 24 (4): 209-211 APR 2003 PDF

Impact of metal/oxide interface on DC and RF performance of depletion-mode GaAs MOSFET employing MBE grown Ga2O3(Gd2O3) as gate dielectric
Author(s): Yang B, Ye PD, Kwo J, Frei MR, Gossmann HJL, Mannaerts JP, Sergent M, Hong M, Bude KNJ
Source: JOURNAL OF CRYSTAL GROWTH 251 (1-4): 837-842 APR 2003

Advances in High k Gate Dielectrics for Si and III-V Semiconductors
Author(s): J. Kwo, M.Hong, B. Busch, M.A. Muller, Y.J. Chabal, A.R. Kortan, J.P. Mannaerts, B. Yang, P.D. Ye, H. Gossmann, A. M. Sergent, K.K. Ng, J. Bude, W.H. Schulte, E. Garfunkel, and T. Gustafsson
Source: Journal of Crystal Growth, 251 (1-4), 645, April 2003

2002 and early

Correlation lengths of the Wigner-crystal order in a two-dimensional electron system at high magnetic fields
Author(s): Ye PD, Engel LW, Tsui DC, Lewis RM, Pfeiffer LN, West K
Source: PHYSICAL REVIEW LETTERS 89 (17): Art. No. 176802 OCT 21 2002 PDF

Microwave resonance of the bubble phases in 1/4 and 3/4 filled high Landau levels
Author(s): Lewis RM, Ye PD, Engel LW, Tsui DC, Pfeiffer LN, West KW
Source: PHYSICAL REVIEW LETTERS 89 (13): Art. No. 136804 SEP 23 2002 PDF

Microwave conductivity of antidot array in regime of fractional quantum Hall effect
Author(s): Ye PD, Engel LW, Tsui DC, Simmons JA, Wendt JR, Vawter GA, Reno JL
Source: PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES 12 (1-4): 109-111 JAN 2002

High magnetic-field microwave conductivity of two-dimensional electrons in an array of antidots
Author(s): Ye PD, Engel LW, Tsui DC, Simmons JA, Wendt JR, Vawter GA, Reno JL
Source: PHYSICAL REVIEW B 65 (12): Art. No. 121305 MAR 15 2002  PDF

Giant microwave photoresistance of two-dimensional electron gas
Author(s): Ye PD, Engel LW, Tsui DC, Simmons JA, Wendt JR, Vawter GA, Reno JL
Source: APPLIED PHYSICS LETTERS 79 (14): 2193-2195 OCT 1 2001  PDF

Internal magnetic focusing in an array of ballistic cavities
Author(s): Ye PD, Tarucha S
Source: PHYSICAL REVIEW B 59 (15): 9794-9797 APR 15 1999 PDF

Internal magnetic focusing in an array of open quantum dots
Author(s): Ye PD, Tarucha S
Source: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 38 (1B): 319-321 JAN 1999

Huge magnetoresistance oscillations in periodic magnetic fields
Author(s): Ye PD, Weiss D, Gerhardts RR, von Klitzing K, Tarucha S
Source: PHYSICA B 251: 330-333 JUN 1998 PDF

Magnetoresistance oscillations induced by periodically arranged micromagnets
Author(s): Ye PD, Weiss D, Gerhardts RR, Nickel H
Source: JOURNAL OF APPLIED PHYSICS 81 (8): 5444-5448 Part 2B, APR 15 1997 PDF

Electrons in mesoscopically inhomogeneous magnetic fields
Author(s): Ye PD, Weiss D, Gerhardts RR, Lutjering G, von Klitzing K, Nickel H
Source: SEMICONDUCTOR SCIENCE AND TECHNOLOGY 11 (11): 1613-1617 Suppl. S, NOV 1996 PDF

Magnetotransport in periodic magnetic fields
Author(s): Ye PD, Weiss D, Gerhardts RR, von Klitzing K, Eberl K, Nickel H
Source: SURFACE SCIENCE 362 (1-3): 337-340 1996 PDF

FABRICATION AND CHARACTERIZATION OF MICROMAGNET ARRAYS ON TOP OF GAAS/ALGAAS HETEROSTRUCTURES
Author(s): YE PD, WEISS D, VON KLITZING K, EBERL K, NICKEL H
Source: APPLIED PHYSICS LETTERS 67 (10): 1441-1443 SEP 4 1995 PDF

STRAIN-INDUCED MAGNETORESISTANCE OSCILLATIONS IN GAAS-ALGAAS HETEROJUNCTIONS WITH FERROMAGNETIC AND SUPERCONDUCTING SUBMICROMETER GRATINGS
Author(s): YE PD, WEISS D, GERHARDTS RR, VON KLITZING K, EBERL K, NICKEL H, FOXON CT
Source: SEMICONDUCTOR SCIENCE AND TECHNOLOGY 10 (5): 715-719 MAY 1995 PDF

ELECTRONS IN A PERIODIC MAGNETIC-FIELD-INDUCED BY A REGULAR ARRAY OF MICROMAGNETS
Author(s): YE PD, WEISS D, GERHARDTS RR, SEEGER M, VON KLITZING K, EBERL K, NICKEL H
Source: PHYSICAL REVIEW LETTERS 74 (15): 3013-3016 APR 10 1995 PDF