Postdoctoral Researchers
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Ph.D. Students
![](images/Picture_Zhuocheng Zhang.jpg) |
Zhuocheng Zhang
BS: University of Science and Technology China
zhan3046@purdue.edu
Topic: Magneto-transport in low dimensional electronic systems
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Nathan Conrad
BS: University of North Carolina at Charlotte
conradn@purdue.edu
Topic: Reliability study of III-V 3D Transistors |
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Zehao Lin
BS: Fudan University
lin1174@purdue.edu
Topic: Ferroelectric dielectric integration on high-mobility channels |
![xxx](images/Jian-Yu Lin.jpg)
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Jian-Yu Lin
BS: National Taiwan University
lin1613@purdue.edu
Topic: Electrical and Thermal Properties of Atomic Layer Amorphous Oxides |
![](images/Sumi Lee.jpg) |
Sumi Lee
BS: SKKU, Korea
MS: SKKU/imec, Korea
lee4827@purdue.edu
Topic: Ferroelectricity of Novel Oxides and Nitrides |
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Chang Niu
BS: Fudan University
changniu.phys@gmail.com
Topic: Low-dimensional devices and transport |
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Pukun Tan
BS: University of Science and Technology China
tan350@purdue.edu
Topic: Magneto-transport in low dimensional electronic materials
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Master Students
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Heather Woods
BS: University of Central Florida, U.S.A.
MS: Purdue University, USA
hhofstee@purdue.edu |
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Linjia Long
BS: UIUC, USA
Topic: Modeling of Atomic Layer Amorphous Oxides
long327@purdue.edu |
![h](HYChen.jpg) |
Hong-Yan Chen
BS: National Chiao Tung University Taiwan
MS: Purdue University
chen200@purdue.edu
Master Degree Research topic: "Magnetic Properties of ALD High-k Dielectrics"
Current Address: Ph.D. candidate at Purdue University
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![yang](yangtian.JPG) |
Tina Yang
BS: Fudan University
MS: National University of Singapore
MS: Purdue University (MS Thesis:
Capacitance-voltage studies of atomic-layer-deposited MOS structures on
GaAs and other III-V compound semiconductors)
yang60@purdue.edu
Current Address: NVIDIA Corporation (tiyang@nvidia.com) |
![c](images/Hoi-sung%20Chung.JPG) |
Hoi-Sung Chung
Ph.D. KAIST (Korea Advanced Institute of Science and Technology)
chs1216@kaist.ac.kr
Topic: ALD Growth Modeling on III-V and Graphene
Current Address: Samsung Electronics, Inc. |
![xian yi](P1010049.JPG) |
Yi Xuan
Ph.D. Tokyo Institute of Technology
yxuan@purdue.edu
Topic: ALD Growth and Novel Channel Material Integration
Current Address: Research
Professor, Purdue University |
![W](images/runsheng%20wang.jpg) |
Runsheng Wang
Peking University
China
rwang@purdue.edu
Topic:
Schottky-Barrier Studies on InGaAs with ALD passivation
Current
Address: Peking University China (E-mail:wrs@pku.edu.cn) |
![dennis](Dennis.jpg) |
Dennis Lin
BS: National Taiwan University; MS: Purdue University;
Ph.D.: Purdue University (Ph.D. Thesis: GaAs and InGaAs MOS Devices with ALD High-k Dielectrics)
lin17@purdue.edu
Current Address: IMEC in Belgium (E-mail: dlin@imec.be) |
![xxx](Tian%20Shen.jpg) |
Tian Shen
BS: University of Science and Technology China
Ph.D. Purdue University
shent@purdue.edu
Ph.D. Thesis: Transport Properties of
Epitaxial Graphene Films For Nano-electronics Applications
Current Address: National Institute for Standard and Technology (NIST)
E-mail: tshen@nist.gov |
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Yanqing Wu
BS: Fudan University China
Ph.D.: Purdue University
wu69@purdue.edu
Ph.D. Thesis: Scaling of InGaAs MOSFET into
Deep Submicron Regime
Current Address: IBM T.J. Watson Research
Center (E-mail: ywu@us.ibm.com) |
![xx](DSC00277.JPG) |
Ozhan Koybasi
BS in Physics and Mathematics, Middle East Technical University, Turkey
MS in Electrical and
Computer Engineering, Purdue University
Ph.D. in Physics, Purdue
University
okoybasi@purdue.edu
Master Degree Research
Topic: High-k/III-V Interface Simulation
Current Address: Harvard
Medical School Email:OKOYBASI@PARTNERS.ORG |
![Min](images/P1010028.JPG) |
Min Xu
BS: Huazhong University
of Science and Technology, China
MS: Fudan University,
China
Ph.D. Purdue University
xum@purdue.edu
Ph.D. Thesis: Atomic-Layer-Deposited High-k Dielectric/III-V Semiconductor
Integration for Future Non-Si CMOS Applications
Current Address: Applied Materials
E-mail: min.xu.prc@gmail.com |
![JJ](gjj1.JPG) |
Jiangjiang Gu
BS: Shanghai
Jiaotung University, China
Ph.D. Purdue University
gu0@purdue.edu
Ph.D.: Non-Planar 3D III-V MOSFETs For High-Speed Low-Power Logic
Applications
Current Address: Intel Corporation
E-mail: jiangjiang.gu@intel |
![Chen](images/wch.jpg) |
Chen Wang
Fudan University China
wang149@purdue.edu
Topic: Advanced High-k/III-V Interface Characterization (in
collaborations with NIST)
Current Address: Fudan University China |
![Yang Lei](images/Yang%20Lei.gif) |
Yang Lei
BS: Northwestern
Polytechnical University in Xi'an, China
MS: Purdue University
yang459@purdue.edu
Topic: Semiconductor Devices
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![Xuefei Li](images/Xuefei Li.jpg) |
Xuefei Li
BS: Harbing University of
Science and Technology
MS: Nanjing University
in China
Joint Ph.D. Nanjing
University in China
Topic: Interface
characterization of InGaAs and Ge MOS structures
li992@purdue.edu
lixuefeinju@gmail.com
Current Address: Huazhong University of Science and Technology, China
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Prof. Cong Ye
Hubei University
yecong@issp.ac.cn
Topic: High-k/2D Semiconductor Interfaces
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Lin Dong
BS and MS: Fudan University China
dong16@purdue.edu
Ph.D.: Non-Silicon MOSFETs and Circuits with Atomic Layer Deposited
Higher-k Dielectrics
Current Address: Applied Materials
E-mail:lin_dong@amat.com;
Desealer@gmail.com |
![Han Liu](Han%20Liu.jpg) |
Han Liu
BS and MS: Fudan University China
Ph.D. Purdue University
hanliu@purdue.edu
Material and Device Aspects of Semiconducting 2D Crystals
Current Address: Intel Corporation
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![Adam Neal](people1.jpg) |
Adam T. Neal
BS: Penn State University
Ph.D. Purdue University
adam.t.neal@gmail.com
Transport Studies of Two-Dimensional Materials for Nanoelectronics
Applications
Current Address: Air Force Research Laboratory |
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Heng Wu
BS: Northwestern Polytechnical
University in Xi'an China
mrhengwu@gmail.com
Non-Silicon CMOS Devices and Circuits on High Mobility Channel Materials: Germanium and III-V
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Jingyun Zhang
BS: Harbin University of Science
and Technology, China
MS: Purdue University
jyzhang389@gmail.com
III-V MOSFETs with Atomic-Layer-Epitaxy Dielectric: Device and Reliability
Current Address: IBM Research |
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Prof. Haiou Li
Guilin University of
Electronic Technology, China
seagull_1228@163.com
Topic: High Speed Semiconductor Devices |
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Chun-Jung Su, Ph.D.
Associate Researcher
National Nano Device Labs.
No. 26, Prosperity Rd. I
Hsinchu City 30078, Taiwan
Tel: +886-3-5726100 ext. 7519
Fax: +886-3-575713403
E-mail: markcjsu@gmail.com
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Wangran Wu
BS: Nanjing University
wwr620@126.com
Topic: Physics of Ge MOSFETs
Current Address:
East-South University China |
![luo](Wei%20Luo.JPG) |
Wei Luo
BS: Huazhong University of
Science and Technology
luo153@purdue.edu
Topic: Physical and Chemical Properties of 2D crystals
Current Address: Huazhong University of
Science and Technology
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Yexin Deng
BS: Peking University
Raul19900829@gmail.com
TWO-DIMENSIONAL ELECTRONICS AND OPTOELECTRONICS: FROM
MATERIALS SYNTHESES TO DEVICE APPLICATIONS
Current Address: IBM Systems
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Yuchen Du
BS: Arizona State
University
du41@purdue.edu
ANISOTROPIC PROPERTIES OF
BLACK PHOSPHORUS AND PHOSPHORENE
Current Address: Gloabal Foundries
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Ling-Ming Yang
BS: Fudan University
MS: Fudan University
yanglingming@gmail.com
TOWARDS HIGH PERFORMANCE TWO DIMENSIONAL TRANSISTORS: DOPING, CONTACTS, AND GATE DIELECTRIC
Current Address: Intel Corporation
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Hong Zhou
BS: University of
Electronic Science and Technology, China
Nanyang Technological University, Singapore
zhou313@purdue.edu
ATOMIC LAYER EPITAXY DIELECTRIC BASED GAN MOS DEVICES AND BEYOND
Current Address: UC Berkeley |
![jikai](images/recent image of jingkai.jpg)
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Jingkai Qin
BS: Harbin Institute of Technology, China
E-mail:qin98@purdue.edu
Topic: Synthesis of 2D crystals
Current Address: Harbin Institute of Technology, Shenzhen |
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Sami AL-Ghamdi
BS: King AbdulAziz University, KSA
Ph.D. Purdue University, USA
alghamds@purdue.edu
Ph.D. Thesis: Electrical characterization of emerging electronic devices in low and high pwoer applications
Current Address: King AbdulAziz University, KSA |
![](images/Hagyoul_Bae.jpg) |
Hagyou Bae
BS: Kookmin University
MS: Kookmin University
PhD: KAIST, South Korea
Current: SAIT, Sumsang Electronics, South Korea
bae53@purdue.edu
Hagyoulbae@gmail.com
Topic: Oxide Thin Film Transistors |
![xx](images/Wonil Chung.JPG) |
Wonil Chung
BS: Hanyang University
MS: KAIST, Korea
Ph.D.: Prudue University
chungwonil@purdue.edu
Topic: Ge Nanoscale 3D Devices
Cuurent Address: Intel Cooperation |
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Yiming Qu Zhejiang University, China
qu85@purdue.edu
Topic: Ultra fast pulse measurements on Fe/DE stacks |
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Gang Qiu BS: Peking University Ph.D. Purdue University
qiugangchoires@gmail.com
gqiu@purdue.edu
Topic: 2D Material Synthesis
Current address: UCLA |
![jikai](images/Junkang's photo.jpg)
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Junkang Li
BS/MS: Zhejiang University, China
li3300@purdue.edu
Topic: Ge Nanoscale transistor fabrication and characterizations
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Zhizhong Chen
BS: Shanghai Jiaotung University, China
PhD: RPI, USA
chenweiyonggeng@gmail.com
Topic: Functional Materials Synthesis and Devices
Current address: ASM
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Jinhyun Noh
BS: Yonsei University
MS: Seoul National University
Ph.D.: Purdue University
noh12@purdue.edu
Topic: Ultra-Wide Bandgap Semiconductor Devices
Current address: Texas Instruments
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Mengwei Si
BS: Shanghai
Jiaotung University, China
Ph.D.: Purdue University, USA
msi@purdue.edu
Topic: III-V 3D/4D Transistors, Steep Slope and Ferroelectric Transistors
Current address: Faculty at Shanghai Jiao-Tung University
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Adam R. Charnas
BS: Purdue University
Ph.D.: Purdue University
Current: Air Force Research Laboratory
acharnas@purdue.edu
Topic: Black Phosphorus and Oxide Semiconductor Devices |
![](images/JieZhang.jpg) |
Jie Zhang
BS: Xiamen University, China
Ph.D.: University of Delaware, USA
Postdoc: Purdue University, USA
Current: Faculty at Xiamen University, China
zhan4605@purdue.edu
Topic: ALD-derived oxide semiconductors and devices
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Xiao Lyo
BS: Peking University
Ph.D.: Purdue University
lyu50@purdue.edu
Topic: Electronic devices beyond Si CMOS |
![](images/Pai-Ying Liao.jpg)
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Pai-Ying Liao
BS: National Taiwan University
Ph.D.: Purdue University
Current: Meta
liao119@purdue.edu
Topic: Low-dimensional materials synthesis for device applications |
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Dongqi Zheng
BS: University of Electronic Science and Technology of China
Ph.D.: Purdue University
Current: Apple
zheng517@purdue.edu
Topic: Low dimensional electronic devices |
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