Ph.D. Students
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Sejoon Caleb Ahn BS: Korea University ahn203@purdue.edu Topic: Novel ferroelectric dielectric integration on oxide semiconductor channels |
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Guang-Lin Lee BS: National Sun Yat-sen University Taiwan MS: National Yang Ming Chiao Tung University Taiwan lee6428@purdue.edu Topic: Electrical and Thermal Properties of Atomic Layer Amorphous Oxides |
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Sumi Lee BS: SKKU, Korea MS: SKKU/imec, Korea lee4827@purdue.edu Topic: Ferroelectricity of Novel Oxides and Nitrides |
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Nicholas Raclaw BS: UIUC nraclaw@purdue.edu Topic: Negative Capacitance Related Topics |
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Kisoo Nam BS: Yonsei University, Korea kisoonam0108@gmail.com Topic: Novel Oxide Semiconductors and Devices |
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Shengyao Huang BS: University of Toronto, Canada huan2200@purdue.edu Topic: Atomic scale nanomaterials and devices |
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Linjia Long BS: UIUC, USA Topic: Modeling of Atomic Layer Amorphous Oxides long327@purdue.edu |
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Master Students
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Heather Woods BS: University of Central Florida, U.S.A. MS: Purdue University, USA hhofstee@purdue.edu |
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Michael Louis Joseph BS: University of Alabama, USA Topic: Advanced device characterizations on atomic layer amorphous oxide transistors josep125@purdue.edu |
Undergraduate Research Students
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Remley Grace Hooker Purdue University, U.S.A. hooker7@purdue.edu |
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Mi-Hsueh (Michelle) Wu Purdue University, U.S.A. wum01@purdue.edu |
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Hong-Yan Chen BS: National Chiao Tung University Taiwan MS: Purdue University Master Degree Research topic: "Magnetic Properties of ALD High-k Dielectrics" Current Address: Ph.D. candidate at Purdue University
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Tina Yang BS: Fudan University MS: National University of Singapore MS: Purdue University (MS Thesis: Capacitance-voltage studies of atomic-layer-deposited MOS structures on GaAs and other III-V compound semiconductors) Current Address: NVIDIA Corporation (tiyang@nvidia.com) |
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Hoi-Sung Chung Ph.D. KAIST (Korea Advanced Institute of Science and Technology) Topic: ALD Growth Modeling on III-V and Graphene Current Address: Samsung Electronics, Inc. |
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Yi Xuan
Ph.D. Tokyo Institute of Technology
Topic: ALD Growth and Novel Channel Material Integration
Current Address: Research Professor, Purdue University |
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Runsheng Wang Peking University China Topic: Schottky-Barrier Studies on InGaAs with ALD passivation Current Address: Peking University China (E-mail:wrs@pku.edu.cn) |
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Dennis Lin BS: National Taiwan University; MS: Purdue University; Ph.D.: Purdue University (Ph.D. Thesis: GaAs and InGaAs MOS Devices with ALD High-k Dielectrics) Current Address: IMEC in Belgium (E-mail: dlin@imec.be) |
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Tian Shen BS: University of Science and Technology China Ph.D. Purdue University Ph.D. Thesis: Transport Properties of Epitaxial Graphene Films For Nano-electronics Applications
Current Address: National Institute for Standard and Technology (NIST) E-mail: tshen@nist.gov |
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Yanqing Wu
BS: Fudan University China Ph.D.: Purdue University Ph.D. Thesis: Scaling of InGaAs MOSFET into Deep Submicron Regime Current Address: IBM T.J. Watson Research Center (E-mail: ywu@us.ibm.com) |
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Ozhan Koybasi
BS in Physics and Mathematics, Middle East Technical University, Turkey MS in Electrical and Computer Engineering, Purdue University Ph.D. in Physics, Purdue University
Master Degree Research Topic: High-k/III-V Interface Simulation Current Address: Harvard Medical School Email:OKOYBASI@PARTNERS.ORG |
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Min Xu
BS: Huazhong University of Science and Technology, China MS: Fudan University, China Ph.D. Purdue University
Ph.D. Thesis: Atomic-Layer-Deposited High-k Dielectric/III-V Semiconductor Integration for Future Non-Si CMOS Applications
Current Address: Applied Materials E-mail: min.xu.prc@gmail.com |
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Jiangjiang Gu
BS: Shanghai Jiaotung University, China Ph.D. Purdue University Ph.D.: Non-Planar 3D III-V MOSFETs For High-Speed Low-Power Logic Applications Current Address: Intel Corporation E-mail: jiangjiang.gu@intel |
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Chen Wang Fudan University China Topic: Advanced High-k/III-V Interface Characterization (in collaborations with NIST) Current Address: Fudan University China |
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Yang Lei BS: Northwestern Polytechnical University in Xi'an, China MS: Purdue University Topic: Semiconductor Devices
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Xuefei Li
BS: Harbing University of Science and Technology MS: Nanjing University in China Joint Ph.D. Nanjing University in China
Topic: Interface characterization of InGaAs and Ge MOS structures
Current Address: Huazhong University of Science and Technology, China |
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Prof. Cong Ye Hubei University Topic: High-k/2D Semiconductor Interfaces
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Lin Dong BS and MS: Fudan University China Ph.D.: Non-Silicon MOSFETs and Circuits with Atomic Layer Deposited Higher-k Dielectrics Current Address: Applied Materials E-mail:lin_dong@amat.com; Desealer@gmail.com |
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Han Liu BS and MS: Fudan University China Ph.D. Purdue University Material and Device Aspects of Semiconducting 2D Crystals Current Address: Intel Corporation
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Adam T. Neal
BS: Penn State University Ph.D. Purdue University Transport Studies of Two-Dimensional Materials for Nanoelectronics Applications Current Address: Air Force Research Laboratory |
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Heng Wu
BS: Northwestern Polytechnical University in Xi'an China mrhengwu@gmail.com Non-Silicon CMOS Devices and Circuits on High Mobility Channel Materials: Germanium and III-V
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Jingyun Zhang
BS: Harbin University of Science and Technology, China MS: Purdue University III-V MOSFETs with Atomic-Layer-Epitaxy Dielectric: Device and Reliability Current Address: IBM Research |
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Prof. Haiou Li
Guilin University of Electronic Technology, China Topic: High Speed Semiconductor Devices |
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Chun-Jung Su, Ph.D. Associate Researcher E-mail: markcjsu@gmail.com |
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Wangran Wu BS: Nanjing University wwr620@126.com Topic: Physics of Ge MOSFETs Current Address: East-South University China |
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Wei Luo BS: Huazhong University of Science and Technology Topic: Physical and Chemical Properties of 2D crystals Current Address: Huazhong University of Science and Technology
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Yexin Deng BS: Peking University Raul19900829@gmail.com TWO-DIMENSIONAL ELECTRONICS AND OPTOELECTRONICS: FROM Current Address: IBM Systems
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Yuchen Du BS: Arizona State University ANISOTROPIC PROPERTIES OF Current Address: Gloabal Foundries
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Ling-Ming Yang BS: Fudan University MS: Fudan University yanglingming@gmail.com TOWARDS HIGH PERFORMANCE TWO DIMENSIONAL TRANSISTORS: DOPING, CONTACTS, AND GATE DIELECTRIC Current Address: Intel Corporation
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Hong Zhou
BS: University of Electronic Science and Technology, China Nanyang Technological University, Singapore ATOMIC LAYER EPITAXY DIELECTRIC BASED GAN MOS DEVICES AND BEYOND Current Address: UC Berkeley |
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Jingkai Qin BS: Harbin Institute of Technology, China E-mail:qin98@purdue.edu Topic: Synthesis of 2D crystals Current Address: Harbin Institute of Technology, Shenzhen |
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Sami AL-Ghamdi
BS: King AbdulAziz University, KSA Ph.D. Purdue University, USA Ph.D. Thesis: Electrical characterization of emerging electronic devices in low and high pwoer applications Current Address: King AbdulAziz University, KSA |
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Hagyou Bae
BS: Kookmin University MS: Kookmin University PhD: KAIST, South Korea Current: SAIT, Sumsang Electronics, South Korea Hagyoulbae@gmail.com
Topic: Oxide Thin Film Transistors |
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Wonil Chung BS: Hanyang University MS: KAIST, Korea Ph.D.: Prudue University chungwonil@purdue.edu Topic: Ge Nanoscale 3D Devices Cuurent Address: Intel Cooperation |
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Yiming Qu Zhejiang University, China Topic: Ultra fast pulse measurements on Fe/DE stacks
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Gang Qiu BS: Peking University Ph.D. Purdue University qiugangchoires@gmail.com gqiu@purdue.edu Topic: 2D Material Synthesis Current address: UCLA |
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Junkang Li BS/MS: Zhejiang University, China Topic: Ge Nanoscale transistor fabrication and characterizations |  |
Zhizhong Chen
BS: Shanghai Jiaotung University, China PhD: RPI, USA Topic: Functional Materials Synthesis and Devices Current address: ASM |
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Jinhyun Noh
BS: Yonsei University MS: Seoul National University Ph.D.: Purdue University noh12@purdue.edu Topic: Ultra-Wide Bandgap Semiconductor Devices Current address: Texas Instruments |  |
Mengwei Si BS: Shanghai Jiaotung University, China Ph.D.: Purdue University, USA Topic: III-V 3D/4D Transistors, Steep Slope and Ferroelectric Transistors Current address: Faculty at Shanghai Jiao-Tung University |
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Adam R. Charnas BS: Purdue University Ph.D.: Purdue University Current: Air Force Research Laboratory acharnas@purdue.edu Topic: Black Phosphorus and Oxide Semiconductor Devices |
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Jie Zhang BS: Xiamen University, China Ph.D.: University of Delaware, USA Postdoc: Purdue University, USA Current: Faculty at Xiamen University, China Topic: ALD-derived oxide semiconductors and devices |
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Xiao Lyo BS: Peking University Ph.D.: Purdue University lyu50@purdue.edu Topic: Electronic devices beyond Si CMOS |
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Pai-Ying Liao BS: National Taiwan University Ph.D.: Purdue University Current: Meta liao119@purdue.edu Topic: Low-dimensional materials synthesis for device applications |
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Dongqi Zheng BS: University of Electronic Science and Technology of China Ph.D.: Purdue University Current: Apple zheng517@purdue.edu Topic: Low dimensional electronic devices |
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Zhuocheng Zhang BS: University of Science and Technology China Ph.D.: Purdue University Ph.D. Dissertation: Atomic-Layer-Deposited Indium Oxide Transistors for Back-End-Of-Line Monolithic 3D Integration |
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Nathan Conrad BS: University of North Carolina at Charlotte Ph.D.: Purdue University Dissetation: ADVANCED ELECTRICAL ANALYSIS OF LOW NOISE MOSFET AND CIRCUIT IMPLEMENTATION FOR LOW POWER RFID APPLICATION
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