ECE 59500 - Fundamentals of TransistorsLecture Hours: 3 Credits: 1
CMPE Special Content Elective
Experimental Course Offered: Fall 2018, Spring 2020
ECE 30500 (grade of B or better) or ECE 60600 or ECE 59500 Semiconductor Fundamentals
Requisites by Topic:
Semiconductor fundamentals (energy bands, doping, carrier densities, drift-diffusion equations, Fermi and quasi-Fermi levels, etc.)
This course is designed for anyone seeking a sound, physical, intuitive understanding of how modern transistors operate. Important technology considerations and applications of transistors are also discussed. The focus is on MOSFETs for digital logic, but other types of transistors are briefly considered. The course is broadly accessible to students with only a very basic knowledge of semiconductor physics and electronic circuits and should be useful for advanced undergraduates, beginning graduate students, as well as practicing engineers and scientists.
This is a 5-week course offered on campus and through EdX
- Fundamentals of Nanotransistors, Mark Lundstrom, World Scientific, 2017.
- Semiconductor Device Fundamentals, 2nd Edition, Robert F. Pierret, Addison-Wesley Publishing Co., 1996, ISBN No. 0-201-54393-1.
Learning Outcomes:A student who successfully fulfills the course requirements will have demonstrated an understanding of:
- MOSFET IV characteristics and device metrics and an ability to analyze measured transistors characteristics and extract key device parameters. [1,6]
- the physical operation of transistors and an acquaintance with the traditional theory of the MOSFET. 
- 1D/2D/3D MOS electrostatics and an appreciation of the need for advanced MOSFET structures such as the FinFET. [1,6]
- how modern transport theory (the transmission approach) is applied to nanoscale MOSFETs. 
- other barrier controlled transistors, such as HEMTs and bipolar transistors and an understanding of what a physics-based compact model is and the role it plays in electronics. 
|Unit 1||Transistors, compact models, and circuits|
|Unit 2||Essential physics of the MOSFET|
|Unit 3||MOS Electrostatics|
|Unit 4||Transmission theory of the MOSFET|
|Unit 5||Limits of MOSFETs, Power MOSFETs, High Electron Mobility Transistors, PN Junctions, Heterostructure Bipolar Transistors, Compact Models|
Engineering Design Content: