Note:

This course will run the second five weeks of the semester and is offered through edX.

Counts as:

• EE Elective
• CMPE Selective - Special Content

Normally Offered:

Each Spring

Campus/Online:

On-campus and online

Requisites:

ECE 30500 or ECE 60600

Requisites by Topic:

Understanding of semiconductor fundamentals (e.g. energy bands, doping, carrier densities, drift-diffusion equations, Fermi and quasi-Fermi levels, etc.)

Catalog Description:

This course develops a simple framework for understanding the essential physics of modern nanotransistors and also discusses important technology considerations and applications of transistors; the focus is on MOSFETs. The goal is to do this in a way that is broadly accessible to students with only a very basic knowledge of semiconductor physics and electronic circuits. The course is designed for anyone seeking a sound, physical, but simple understanding of how nanoscale transistors operate. The course should be useful for advanced undergraduates, beginning graduate students, as well as practicing engineers and scientists.

Learning Outcomes

A student who successfully fulfills the course requirements will have demonstrated:

• An understanding of MOSFET IV characteristics and device metrics and an ability to analyze measured transistors characteristics and extract key device parameters.
• An understanding of the physical operation of transistors and an acquaintance with the traditional theory of the MOSFET.
• An understanding of 1D/2D/3D MOS electrostatics and an appreciation of the need for advanced MOSFET structures such as the FinFET.
• An understanding of how modern transport theory (the transmission approach) is applied to MOSFETs.
• An acquaintance with other barrier controlled transistors, such as HEMTs and bipolar transistors and an understanding of what a physics-based compact model is and the role it plays in electronics.

Lecture Outline:

Assessment Method:

Students in this course are evaluated by exams.