ECE 45500 - Integrated Circuit EngineeringLecture Hours: 3 Credits: 3 Professional Attributes
Normally Offered: Each Fall
Prerequisites: ECE 202, ECE 255 Concurrent Prerequisites: ECE 305 or consent of instructor
Requisites by Topic:
Prerequisites: Basic understanding of transistors and diodes, including geometry, large signal models, and small signal models; Basic ability in transistor circuit analysis and design, including the ability to design an amplifier Concurrent Prerequisites: bipolar and MOS transistor device physics
Analysis, design and fabrication of silicon bipolar and MOSFET monolithic integrated circuits. Consideration of amplifier circuit design, and fabrication techniques with circuit simulation using Spice-2. Integrated operational amplifiers with difference amplifiers, current sources, active loads, and voltage references. Design of IC analog circuit building blocks.
- Analog Integrated Circuit Design, 2nd Edition, Tony Chan Carusone, David A. Johns & Ken Martin, John Wiley & Sons, Inc., 2011, ISBN No. 9780470770108.
Recommended Text(s): None.
Learning Objectives:A student who successfully fulfills the course requirements will have demonstrated:
- an ability to sketch the basic cross-sections of an integrated circuit transistor. [a,j,k]
- an ability to layout a simple transistor circuit. [c,k]
- an ability to, given a layout and silicon parameters, calculate parasitic resistance and capacitance for transistors. [a,e]
- an ability to, given transistor characteristics and operating point, determine the numerical values of the elements in the small signal equivalent circuit. [a,e]
- an ability to design a suitable integrated circuit current source. [a,c]
- an ability to, given the parameters of gain, input impedance and output impedance, design a suitable amplifier using either MOS or bipolar transistors and verify with SPICE. [a,b,c,d]
- an ability to design a simple operational amplifier, numerically estimate large signal and small signal characteristics, and verify the calculations with a SPICE simulation. [a,c,d,e,g,j,k]
|1-3||Introduction to IC processing for bipolar and MOS circuit fabrication|
|4-5||Models for IC BJT and MOSFET devices: Operating point (DC non-linear) and linear high frequency small signal|
|6-7||Multiple FET and BJT composite amplifiers|
|8-9||Differential Amplifier; common mode and differential mode gain, Rin and Rout, design to meet specifications|
|10-11||NPN and PNP current sources in Difference Amplifiers; output resistance of I-sources, MOSFET and BJT self-biased current sources and voltage references|
|13-14||The Operational Amplifier|