ECE 65000 - Essential Physics of the Nanoscale MOSFET

Credits: 1

Areas of Specialization(s):

Counts as:

Normally Offered: Each Fall, Spring

Graduate Standing

Requisites by Topic:
This course is intended to be broadly accessible to those with a BS degree in the physical sciences or engineering. No familiarity with electronics or transistors is assumed, but those with such a background will gain an understanding of how nanoscale transistors operate and how they differ from their micrometer scale cousins. An introductory level understanding of basic semiconductor physics will be helpful. (ECE 305 or 606 of equivalent understanding of basic semiconductor physics.) This topic will be briefly reviewed at the beginning of the course, and pointers to web-based lectures that cover background topics will be provided.

Catalog Description:
The transistor, specifically the MOSFET (metal-oxide-semiconductor field-effect transistor) is the key enabler of modern electronics. Progress in transistor scaling has pushed channel lengths to the nanometer regime where traditional approaches to device physics lose validity. This course describes a way of understanding MOSFETs that is much more suitable than traditional approaches when the channel lengths are of nanoscale dimensions. Surprisingly, the final result looks much like the traditional, textbook, MOSFET model, but the parameters in the equations have simple, clear interpretations at the nanoscale. My objective for this course is to provide students with an understanding of the essential physics of nanoscale transistors as well as some of the practical technological considerations and fundamental limits. The goal is to do this in a way that is broadly accessible to students with only a basic knowledge of semiconductor physics and electronic circuits.

Supplementary Information:
An extensive set of references is listed on the course web page (books, journal papers, online lectures). See:

Required Text(s): None.

Recommended Text(s):
  1. Nanoelectronic Modeling: From Quantum Mechanics and Atoms to Realistic Devices, Gerhard Klimeck,, 2010.

Lecture Outline:

Lectures Major Topics
1 Lecture 01: Overview
1 Lecture 02: (NEMO) Motivation and Background Fundamental device modeling on the nanometer scale must include effect of open systems, high bias, and an atomistic basis. The non-equilibrium Green Function Formalism (NEGF) can include all these...
1 Lecture 03: - Online Simulation and More This presentation provides a brief overview of the nanoHUB capabilities, compares it to static web page delivery, highlights its technology basis, and provides a vision for future...
1 Lecture 07: Introduction to Bandstructure Engineering I This presentation serves as a reminder about basic quantum mechanical principles without any real math. The presentation reviews critical properties of classical systems that can be described as...
1 Lecture 08: Introduction to Bandstructure Engineering II This presentation provides a brief overview of the concepts of bandstructure engineering and its potential applications to light detectors, light emitters, and electron transport devices. ...