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ECE 45500 - Integrated Circuit Engineering

Lecture Hours: 3 Credits: 3

Professional Attributes
EE Elective

Normally Offered: Each Fall

ECE 20200 and ECE 25500 and ECE 30500 [may be taken concurrently]

Requisites by Topic:
Prerequisites: Basic understanding of transistors and diodes, including geometry, large signal models, and small signal models; Basic ability in transistor circuit analysis and design, including the ability to design an amplifier Concurrent Prerequisites: bipolar and MOS transistor device physics

Catalog Description:
Analysis, design and fabrication of silicon bipolar and MOSFET monolithic integrated circuits. Consideration of amplifier circuit design, and fabrication techniques with circuit simulation using Spice-2. Integrated operational amplifiers with difference amplifiers, current sources, active loads, and voltage references. Design of IC analog circuit building blocks.

Required Text(s):
  1. Analog Integrated Circuit Design, 2nd Edition, Tony Chan Carusone, David A. Johns & Ken Martin, John Wiley & Sons, Inc., 2011, ISBN No. 9780470770108.

Recommended Text(s): None.

Learning Objectives:

A student who successfully fulfills the course requirements will have demonstrated:
  1. an ability to sketch the basic cross-sections of an integrated circuit transistor. [a,j,k]
  2. an ability to layout a simple transistor circuit. [c,k]
  3. an ability to, given a layout and silicon parameters, calculate parasitic resistance and capacitance for transistors. [a,e]
  4. an ability to, given transistor characteristics and operating point, determine the numerical values of the elements in the small signal equivalent circuit. [a,e]
  5. an ability to design a suitable integrated circuit current source. [a,c]
  6. an ability to, given the parameters of gain, input impedance and output impedance, design a suitable amplifier using either MOS or bipolar transistors and verify with SPICE. [a,b,c,d]
  7. an ability to design a simple operational amplifier, numerically estimate large signal and small signal characteristics, and verify the calculations with a SPICE simulation. [a,c,d,e,g,j,k]
Assessment Method for Learning Objectives: none

Lecture Outline:

Weeks Topics
1-3 Introduction to IC processing for bipolar and MOS circuit fabrication
4-5 Models for IC BJT and MOSFET devices: Operating point (DC non-linear) and linear high frequency small signal
6-7 Multiple FET and BJT composite amplifiers
8-9 Differential Amplifier; common mode and differential mode gain, Rin and Rout, design to meet specifications
10-11 NPN and PNP current sources in Difference Amplifiers; output resistance of I-sources, MOSFET and BJT self-biased current sources and voltage references
12 Output Stages
13-14 The Operational Amplifier
15 Special Topics