ECE 65400 - Solid-State Devices II

Lecture Hours: 3 Credits: 3

Areas of Specialization(s):

Microelectronics and Nanotechnology

Counts as:

Normally Offered: Each Spring

Catalog Description:
Introduction to advanced concepts in semiconductor devices as an extension and continuation of ECE-606. The course is divided into three segments. The first segment introduces students to charge storage and charge transfer in deep-depletion MOS devices (CCDs and DRAMs). The second segment covers optical processes in semiconductor devices, including absorption (photodiodes), spontaneous emission (LEDs), and stimulated emission (semiconductor lasers). Depending on student interest, the third segment covers either (i) transferred-electron and transit-time effects in microwave oscillators (Gunn and IMPATT diodes), or (ii) power MOSFETs and high-level injection in PIN diodes, IGBTs, and thyristors.

Required Text(s): None.

Recommended Text(s):
  1. Advanced MOS Devices (Modular Series on Solid State Devices), Dieter K. Schroder, Addison-wesley, 1987.
  2. Physical Principles of Semiconductor Devices, James A. Cooper.
  3. Physics of Semiconductor Devices, 3rd Edition, Simon M. Sze and Kwok Ng, John wiley, 2007.
  4. Power Semiconductor Devices, B. J. Baliga, PWS Publishing Co., 1996.
  5. Semiconductor Power Devices, Sorab K. Ghandi, John Wiley, 1977.

Lecture Outline:

Weeks Major Topics
4 Charge storage and charge transfer in deep-depletion MOS devices (CCDs and DRAMs)
6 Optical processes in semiconductor devices, including absorption (photodiodes), spontaneous emission (LEDs), and stimulated emission (semiconductor lasers)
5 (i) Transferred-electron and transit-time effects in microwave oscillators (Gunn and IMPATT diodes); (ii) Power MOSFETs and high-level injection in PIN diodes, IGBTs, and thyristors.