ECE 65600 - Electronic Transport in SemiconductorsLecture Hours: 3 Credits: 3
Areas of Specialization(s):Microelectronics and Nanotechnology
Normally Offered: Fall - odd years
The course consists of three parts. Part 1 focuses on ballistic (and quasi-ballistic) transport both semiclassical and quantum. Part 2 focuses on traditional low-field transport theory based on the Boltzmann Transport Equation. It treats drift-diffusion charge transport as well as thermoelectric effects (heat flow and temperature gradients) and galvanomagnetic effects (magnetic and electric fields). Part 3 examines, high-field transport first in bulk semiconductors to explain phenomena such as velocity saturation and then in small devices where electric fields change rapidly and effects such as velocity overshoot arise.
This is a course about how charge flows in semiconductors and semiconductor devices. It is a practical course for those interested in devices. The course is intended to be accessible to students with a general, introductory background in semiconductors, such as ECE 606 at Purdue University. The specific course objectives are: 1) to develop a clear, physical understanding of charge and energy transport in bulk semiconductors and in small semiconductor devices, and 2) to introduce commonly used transport-modeling approaches such as drift-diffusion, energy transport, Monte Carlo simulation, and quantum transport.
- Fundamentals of Carrier Transport, 2nd Edition, Mark Lundstrom, Cambridge University Press, 2000, ISBN No. 0-521-63134-3.
Recommended Text(s): None.
|6||Review of essentials of semiconductor physics|
|8||Semiclassical ballistic transport|
|3||Quantum ballistic transport|
|9||Low-field, diffusive transport|
|1||Monte Carlo Simulation|
|2||High-field transport in bulk semiconductors|
|2||Off-equilibrium transport in devices|