ECE 60600 - Solid State Devices I

Lecture Hours: 3 Credits: 3

Areas of Specialization(s):

Microelectronics and Nanotechnology

Counts as:

Normally Offered: Each Fall, Spring

Catalog Description:
A relatively-broad moderate-depth coverage of semiconductor devices and related topics. The first portion of the course presents and examines semiconductor fundamentals required in the operational analysis of microelectronic devices. Next, PN junction and Metal-Semiconductor diode theory is reviewed, followed by analyses of the Bipolar Junction Transistor (BJT) and Heterojunction Bipolar Transistor (HBT). The final portion of the course treats the Metal-Oxide-Semiconductor Capacitor (MOS-C) and Field Effect Transistor (MOSFET).

Required Text(s):
  1. Advanced Semiconductor Fundamentals, Vol. VI in the Modular Series on Solid State Devices, 2nd Edition, R. F. Pierret, Prentice-Hall, 2002, ISBN No. 0-13-061792-X.
  2. Semiconductor Device Fundamentals, R. F. Pierret, Addison-Wesley, 1996, ISBN No. 0-201-54393-1.
Recommended Text(s):
  1. Physics of Semiconductor Devices, 3rd Edition, S.M. Sze and K.K. Ng, Wiley Interscience, 2007, ISBN No. 978-0-471-14323-9.

Lecture Outline:

Week Major Topics
1 Basic Semiconductor Properties
2 Elements of Quantum Mechanics
3 Energy Band Theory
4 Equilibrium Carrier Statistics
5 Recombination-Generation
6 Carrier Transport
7 p-n junctions
8 MS Contacts and Diodes, Midterm Exam
9 Bipolar Junction Transistors
10 Heterojunction Bipolar Transistors
11 Metal-Oxide-Semiconductor (MOS) Fundamentals
12 MOS Capacitor C-V Characteristics
13 MOS Field-Effect Transistors (MOSFETs)
14 Nonideal MOS
15 Small-Dimension MOS