ECE 30500 - Semiconductor DevicesLecture Hours: 3 Credits: 3 Professional Attributes
Advanced EE Selective
Normally Offered: Each Fall, Spring
ECE 25500 and (PHYS 27200 or PHYS 24100 or PHYS 26100 or PHYS 25100 and (MA 26600 or MA 26200 or MA 3660)
Requisites by Topic:
Familiarity with the lead structure and basic electrical characteristics associated with normally encountered semiconductor devices (pn-junction diodes, BJTs, MOSFETs); elementary electrostatics; rudimentary differential equations.
Introduces and explains terminology, models, properties, and concepts associated with semiconductor devices. Provides detailed insight into the internal workings of the "building-block" device structures such as the pn-junction diode, Schottky diode, BJT, and MOSFET. Presents information about a wide variety of other devices including solar cells, LEDs, HBTs, and modern field-effect devices. Systematically develops the analytical tools needed to solve practical device problems.
The text contains computer-based exercises and homework problems utilizing MatLab. MatLab: Student Version is a supplemental text and software package recommended for purchase by all ECE students.
- Semiconductor Device Fundamentals, R. F. Pierret, Prentice-Hall, 1996, ISBN No. 978-0201543933.
- MatLab: Student Version, Current Edition, The MathWorks, Inc.
Learning Outcomes:A student who successfully fulfills the course requirements will have demonstrated:
- an understanding of the semiconductor bonding and energy band models, of semiconductor carrier properties and statistics, and of carrier action. 
- an ability to apply standard device models to explain/calculate critical internal parameters and standard terminal characteristics of the pn-junction diode and the Schottky diode. 
- an ability to apply standard device models to explain/calculate critical internal parameters and standard terminal characteristics of the Metal-Oxide-Semiconductor field Effect Transistor and the Bipolar Junction Transistor. 
|1-16||SEMICONDUCTOR FUNDAMENTALS Course Introduction (1) Semiconductor materials and models (2) Carrier properties and statistics (4) Carrier action -- drift, diffusion and recombination-generation (6)|
|17-31||DIODES pn Junction diodes Fabrication (1) Electrostatics (2) Ideal I-V characteristics (2) Breakdown (1) Select deviations from the ideal (1) Reverse-bias junction capacitance (1) Schottky diodes (3) Optoelectronic diodes (1)|
|32-44||TRANSISTORS Bipolar junction transistors (5) Metal-oxide-semiconductor field-effect transistors (5) Modern field-effect transistor structures (2)|
|( ) designates the number of lecture periods devoted to any particular topic. Remaining hours are used for examinations and problem solution discussions.|