ECE 30500 - Semiconductor Devices
Note:
The text contains computer-based exercises and homework problems utilizing MatLab. MatLab: Student Version is a supplemental text and software package recommended for purchase by all ECE students.
Course Details
Lecture Hours: 3 Credits: 3
Counts as:
- EE Advanced Selective
- CMPE Complementary Selective
Normally Offered:
Each Fall, Spring
Campus/Online:
On-campus only
Requisites:
(ECE 20002 or ECE 25500) and (PHYS 27200 or PHYS 24100 or PHYS 26100 or PHYS 25100) and (MA 26600 or MA 26200 or MA 36600)
Requisites by Topic:
Familiarity with the lead structure and basic electrical characteristics associated with normally encountered semiconductor devices (pn-junction diodes, BJTs, MOSFETs); elementary electrostatics; rudimentary differential equations.
Catalog Description:
Introduces and explains terminology, models, properties, and concepts associated with semiconductor devices. Provides detailed insight into the internal workings of the "building-block" device structures such as the pn-junction diode, Schottky diode, BJT, and MOSFET. Presents information about a wide variety of other devices including solar cells, LEDs, HBTs, and modern field-effect devices. Systematically develops the analytical tools needed to solve practical device problems.
Required Text(s):
- Semiconductor Device Fundamentals , R. F. Pierret , Prentice-Hall , 1996 , ISBN No. 978-0201543933
Recommended Text(s):
- MatLab: Student Version , Current Edition , The MathWorks, Inc
Learning Outcomes:
- an understanding of the semiconductor bonding and energy band models, of semiconductor carrier properties and statistics, and of carrier action. [1]
- an ability to apply standard device models to explain/calculate critical internal parameters and standard terminal characteristics of the pn-junction diode and the Schottky diode. [1]
- an ability to apply standard device models to explain/calculate critical internal parameters and standard terminal characteristics of the Metal-Oxide-Semiconductor field Effect Transistor and the Bipolar Junction Transistor. [1]
Lecture Outline:
Lectures | Topic |
---|---|
1-16 | SEMICONDUCTOR FUNDAMENTALS Course Introduction (1) Semiconductor materials and models (2) Carrier properties and statistics (4) Carrier action -- drift, diffusion and recombination-generation (6) |
17-31 | DIODES pn Junction diodes Fabrication (1) Electrostatics (2) Ideal I-V characteristics (2) Breakdown (1) Select deviations from the ideal (1) Reverse-bias junction capacitance (1) Schottky diodes (3) Optoelectronic diodes (1) |
32-44 | TRANSISTORS Bipolar junction transistors (5) Metal-oxide-semiconductor field-effect transistors (5) Modern field-effect transistor structures (2) |
( ) designates the number of lecture periods devoted to any particular topic. Remaining hours are used for examinations and problem solution discussions. |
Assessment Method:
Exam 1 will assess outcome (i), exam 2 will access outcome (ii), and exam 3, given during finals week, will access outcome (iii).