ECE 30500 - Semiconductor DevicesLecture Hours: 3 Credits: 3
EE Advanced Selective
CMPE Complementary Elective
Normally Offered: Each Fall, Spring
(ECE 20002 or ECE 25500) and (PHYS 27200 or PHYS 24100 or PHYS 26100 or PHYS 25100) and (MA 26600 or MA 26200 or MA 36600)
Requisites by Topic:
Familiarity with the lead structure and basic electrical characteristics associated with normally encountered semiconductor devices (pn-junction diodes, BJTs, MOSFETs); elementary electrostatics; rudimentary differential equations.
Introduces and explains terminology, models, properties, and concepts associated with semiconductor devices. Provides detailed insight into the internal workings of the "building-block" device structures such as the pn-junction diode, Schottky diode, BJT, and MOSFET. Presents information about a wide variety of other devices including solar cells, LEDs, HBTs, and modern field-effect devices. Systematically develops the analytical tools needed to solve practical device problems.
The text contains computer-based exercises and homework problems utilizing MatLab. MatLab: Student Version is a supplemental text and software package recommended for purchase by all ECE students.
- Semiconductor Device Fundamentals, R. F. Pierret, Prentice-Hall, 1996, ISBN No. 978-0201543933.
- MatLab: Student Version, Current Edition, The MathWorks, Inc.
Learning Outcomes:A student who successfully fulfills the course requirements will have demonstrated:
- an understanding of the semiconductor bonding and energy band models, of semiconductor carrier properties and statistics, and of carrier action. 
- an ability to apply standard device models to explain/calculate critical internal parameters and standard terminal characteristics of the pn-junction diode and the Schottky diode. 
- an ability to apply standard device models to explain/calculate critical internal parameters and standard terminal characteristics of the Metal-Oxide-Semiconductor field Effect Transistor and the Bipolar Junction Transistor. 
|1-16||SEMICONDUCTOR FUNDAMENTALS Course Introduction (1) Semiconductor materials and models (2) Carrier properties and statistics (4) Carrier action -- drift, diffusion and recombination-generation (6)|
|17-31||DIODES pn Junction diodes Fabrication (1) Electrostatics (2) Ideal I-V characteristics (2) Breakdown (1) Select deviations from the ideal (1) Reverse-bias junction capacitance (1) Schottky diodes (3) Optoelectronic diodes (1)|
|32-44||TRANSISTORS Bipolar junction transistors (5) Metal-oxide-semiconductor field-effect transistors (5) Modern field-effect transistor structures (2)|
|( ) designates the number of lecture periods devoted to any particular topic. Remaining hours are used for examinations and problem solution discussions.|