ECE 695C - Low Dimensional Nanoelectronic Devices
Course Details
Lecture Hours: 3 Credits: 3
Counts as:
Experimental Course Offered:
Spring 2009
Catalog Description:
This course focuses on the device physics of electronic devices, including transistors, based on low-dimensional nanostructures. The course will describe relevant materials and device structures, the impact of dimensionality on the materials and device properties, quantum-mechanical phenomena responsible for various device characteristics, and typical experimental techniques for characterizing devices.
Required Text(s):
None.
Recommended Text(s):
- Carbon nanotube field-effect transistors , J. Knoch and J. Appenzeller
- Electronic Transport in Mesocopic Systems , S. Datta , Cambridge University Press , ISBN No. 9780521599436
- Physics of Semiconductor Devices , 3rd Edition , S.M. Sze , John Wiley & Sons , ISBN No. 9780471143239
- Towards Nanowire Electronics , J. Appenzeller , IEEE Transactions on Electron Devices , 2008
Lecture Outline:
Topics | |
---|---|
3 | Reviewing semiconducting materials, insulators and the concept of switching in MOSFETs. Review of fabrication approaches. |
3 | Connecting material properties and device performance (band gap and making contact) |
5 | The impact of dimensionality ... on the material properties (DOS, dispersion, strain) |
5 | The impact of dimensionality ... on the device properties (electrostatics, screening, mesoscopic transport) |
5 | Carbon nanotubes as an example of a one-dimensional system (connecting material and electrical properties) |
2 | Characteristic length, energy and other scales |
2 | Nano-FETs as Schottky barrier devices |
2 | Comparing theory and experiment - examples from the current literature |
4 | Student project on data extraction and critical evaluation of a representative state-of-the-art article on nanoelectronics devices |
5 | Quantum mechanics tunneling (gate leakage, Schottky barrier tunneling, Band-to-band tunneling, Fowler Nordheim tunneling...) |
5 | Quantum mechanics Interference related effects (phase coherence length, conductance fluctuations, weak localization...) |
3 | Devices from nanowires - including 2D effects (transport, electrostatics) |
2 | Exams/Project reports |
Assessment Method:
none