ECE 65800 - Semiconductor Material and Device CharacterizationLecture Hours: 3 Credits: 3
Areas of Specialization(s):Microelectronics and Nanotechnology
Normally Offered: Spring - even years
An examination of modern characterization techniques routinely employed to determine semiconductor material and device parameters. Concepts and theory underlying the techniques are reviewed, and sample experimental results are presented. Emphasis is on techniques employing electrical measurements.
- Semiconductor Material and Device Characterization, 3rd Edition, D. K. Schroder, John wiley & Sons, 2015, ISBN No. 13:978-0-471-73906-7.
Recommended Text(s): None.
|1||Resistivity and type measurements|
|2||Semiconductor doping measurements and profiling|
|1 2/3||Barrier height and contact resistance measurements|
|1||Series resistance and related measurements|
|1 1/3||Deep-level parameter measurements|
|1 1/3||Measurement of oxide and interface parameters in MOS devices|
|1 1/3||Measurement of MOSFET channel parameters|
|2 1/3||Carrier lifetime measurements|
|1||Carrier mobility measurements|
|2||Demonstrations and midterm exam|