ECE 65800 - Semiconductor Material and Device Characterization

Lecture Hours: 3 Credits: 3

Areas of Specialization(s):

Microelectronics and Nanotechnology

Counts as:

Normally Offered: Spring - even years

Catalog Description:
An examination of modern characterization techniques routinely employed to determine semiconductor material and device parameters. Concepts and theory underlying the techniques are reviewed, and sample experimental results are presented. Emphasis is on techniques employing electrical measurements.

Required Text(s):
  1. Semiconductor Material and Device Characterization, 3rd Edition, D. K. Schroder, John wiley & Sons, 2015, ISBN No. 13:978-0-471-73906-7.

Recommended Text(s): None.

Lecture Outline:

Weeks Major Topics
1 Resistivity and type measurements
2 Semiconductor doping measurements and profiling
1 2/3 Barrier height and contact resistance measurements
1 Series resistance and related measurements
1 1/3 Deep-level parameter measurements
1 1/3 Measurement of oxide and interface parameters in MOS devices
1 1/3 Measurement of MOSFET channel parameters
2 1/3 Carrier lifetime measurements
1 Carrier mobility measurements
2 Demonstrations and midterm exam