August 25, 2016

ECE Student Fan Chen wins Best Student Poster Award at ICPS

PhD Student Fan Chen
PhD Student Fan Chen
This award from the International Conference on the Physics of Semiconductors (ICPS) is highly competitive and recognizes the student's academic abilities and scholarly achievements. Fan's paper was entitled "Transport in vertically stacked hetero-structures from 2D materials".

PhD student Fan Chen has received the Best Student Poster Award at the 33rd International Conference on the Physics of Semiconductors (ICPS), held July 31 - Aug 5, 2016 in Beijing, China. This conference is the premier meeting to report the state of the art semiconductor physics and serve as a forum where specialists discuss future research directions and technological advancements. This award is highly competitive and recognizes the student's academic abilities and scholarly achievements.

The award was presented for the paper entitled "Transport in vertically stacked hetero-structures from 2D materials". The co-authors of the paper are Hesameddin Ilatikhameneh, Yaohua Tan, Daniel Valencia, Gerhard Klimeck, and Rajib Rahman​​.

​Fan Chen​ received her Bachelor’s Degree in Physics from Fudan University ​and ​​started her Ph.D​ study​ in Dr. Gerhard Klimeck's group co-advised by Dr. Michael Manfra since October 2012.​ ​​She is in the final year of Ph.D, work​ing​ in the field of nano electronics. Her dissertation title is "U​ltra-low Power Transistors Based​ ​O​n​​ ​2D​ Materials"​​.​​

​The fast growth of information technology has been sustained by continuous scaling of silicon-based MOSFETs. The scaling of transistors face two major challenges nowadays: the degradation of gate control and fundamental thermionic limitation of the steepness of sub-threshold swing (SS). 2D materials have emerged as promising candidates to replace silicon, as they can maintain excellent device electrostatics at much reduced channel length and thickness. Tunnel field effect transistors (TFETs) based on band to band tunneling has been demonstrated to break the thermionic limitation of SS. ​Fan conducts research on investigating ​​2D material TFE​Ts by the means of atomistic quantum transport simulations​. She performs​ systematic study on the impact of device design parameter​s​ to provide a comprehensive understanding of the device physics and design guideline​s.​ ​

Her work has been ​published in​ 10 ​peer-reviewed ​journal papers, conference proceedings ​with Fan as the first author. She is also the reviewer for several peer-reviewed journals​ in the field of nano electronics​.