Fundamentals of Transistors
ECE59500
Credit Hours:
1Learning Objective:
After completing this course you will be able to:
- Understand MOSFET IV characteristics and device metrics and be able to analyze measured transistors characteristics and extract key device parameters
- Have a sound understanding of the physical operation of transistors and be acquainted with the traditional theory of the MOSFET
- Be familiar with 1D/2D/3d MOS electrostatics and appreciate the need for advanced MOSFET structures such as the FinFET
- Understand modern transport theory (the transmission approach) and its application to nanoscale MOSFETs
- Be introduced to other barrier-controlled transistors, such as HEMTs and bipolar transistors
- Know what a physics-based compact model is and the role they play in electronics
Description:
The transistor has been called the greatest invention of the 20th century - it enabled the electronics systems that have shaped the world we live in. This course is designed for anyone seeking a sound, physical, intuitive understanding of how modern transistors operate. Important technology considerations and applications of transistors are also discussed. The focus is on MOSFETs, but other types of transistors are briefly considered too. The course is broadly accessible to students with only a very basic knowledge of semiconductor physics and electronic circuits and should be useful for advanced undergraduates, beginning graduate students, as well as practicing engineers and scientists.
Topics Covered:
Week 1: Transistors and Circuits
Week 2: Essential Physics of the MOSFET
Week 3: MOS Electrostatics
Week 4: Transmission Theory of the MOSFET
Week 5: Additional Topics
Prerequisites:
A basic knowledge of undergraduate semiconductor device course (e.g. energy bands, doping, carrier densities, drift-diffusion equations, Fermi and quasi-Fermi levels, etc.) is assumed. No familiarity with electronics or transistors is assumed, but those with a background will gain an understanding of how nanoscale transistors differ from their micrometer scale cousins.
Web Address:
https://purdue.brightspace.com
Homework:
Short Problems: A short problem is provided after most lectures. These problems are not graded.
Homework Assignments: The homework provided in this course is for your information and practice. Solutions are provided.
Practice Exams: Practice exams have been provided to help prepare for the proctored exams.
Quizzes: Multiple-choice quizzes will follow most lectures to assess your understanding of the material. These quizzes are worth 30% of your course grade.
Exams:
There are two online proctored exams in this course. Each exam is worth 35% of the course grade.
Textbooks:
There are no required textbooks for this course.
A draft copy of a set of lecture notes published by World Scientific is provided in Brightspace:
- Fundamentals of Transistors by Mark Lundstrom (PDF) (copyright World Scientific Publishing Company, 2018).
Those who wish to dive deeper may consult the following, linked in Brightspace:
- Compact Models and the Physics of Nanoscale FETs, IEEE Trans. Electron Devices, vol 61, ppl 225-233, by Mark S. Lundstrom and Dimitri A. Antoniadis, 2004 (PDF)
Computer Requirements:
Students are expected to have access to reliable high-speed internet, a working microphone and camera for the proctored exams.