ECE 40700 - Semiconductor Measurements Laboratory
Course Details
Lab Hours: 3 Credits: 1
Counts as:
- EE Adv Level Lab
- CMPE Selective - Special Content
Normally Offered:
Each Fall, Spring
Campus/Online:
On-campus only
Requisites:
ECE 20800 and ECE 30500
Catalog Description:
Experiments incorporating state-of-the-art equipment and measurement techniques are performed to collect electrical characteristics exhibited by a representative set of semiconductor devices including the pn-junction diode, Schottky diode, photodevices (solar cell, photodetectors, LEDs), BJTs, the MOS-Capacitor, MOSFETs, and special resistor-like structures. The devices are subjected to d.c., a.c., and pulse biasing, magnetic fields, optical excitation, and/or temperature ranging. The measured characteristics are subsequently used to deduce information about the internal nature and/or operation of semiconductor devices.
Required Text(s):
- Class notes: EE 407 Laboratory Manual
Recommended Text(s):
None.
Learning Outcomes:
- pn-junction diode I-V data. [a,b,k]
- pn-junction diode C-V data. [a,b,k]
- diode transient response data. [a,b,k]
- photodide data. [a,b,k]
- van der Pauw resistivity and Hall Effect data. [a,b,k]
- Si photoconductivity data. [a,b,k]
- BJT characteristics. [a,b,k]
- MOS-capacitor C-V data. [a,b,k]
- MOSFET characteristics. [a,b,k]
Lab Outline:
| Week | Activity |
|---|---|
| 1 | Introduction; Experiment #1 Demo; Lab Tour |
| 2 | Curve Tracer; Probe Measurements |
| 3 | pn-Junction Diode I-V |
| 4 | Demonstrations; Student Talks |
| 5 | pn-Junction Diode C-V |
| 6 | Diode Transient Response |
| 7 | Introduction to Photodevices |
| 8 | Exp. #7 Demonstration; Student Talks |
| 9 | Photoconductivity; Carrier Lifetime |
| 10 | Resistivity vs. Temperature; Hall Effect |
| 11 | BJT Characteristics |
| 12 | MOS-C C-V |
| 13 | MOSFET Characteristics |
| 14 | Student Talks; Discussion of Experiments |
| 15 | Open Lab |
Assessment Method:
none