Graduate Student Heng Wu has won the 2013 Nicollian Best Paper Award at 2013 IEEE Semiconductor Interface Specialist Conference (SISC). His paper is titled "Ultra-scaled Junctionless MOSFETs on GeOI Substrates". Record high drain current on Ge NMOSFET was reported at sub-10nm channel length with a newly designed V-gate structure. High performance Ge NMOSFET is a long-standing technical challenge in the development of transistor technology.

He is advised by Professor Peide Ye. This is the second year in a row that one of Professor Ye's students has won the award.