ECE Graduate student Muhammad Masuduzzaman’s paper has been featured in APL's Research Highlights section. Masuduzzaman’s research focuses on fundamental understanding of the mechanics of defect creation and long-term degradation of electronic devices, including high speed non-volatile memories based on ferroelectric materials. The paper, published in Applied Physics Letters, is titled “The Origin of Broad Distribution of Breakdown Times in Polycrystalline Thin Film Dielectrics”. His work is supervised by Professor Muhammad Ashraful Alam.

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