"Computational Investigation of Wide-Band-Gap Semiconductors for Power Electronics" 

Justin Potts, MSE PhD Candidate 

Advisor: Professor Arun Mannodi-Kanakkithodi

ABSTRACT

Power electronics (PE) are integral in energy harvesting, transmission, and storage technologies. While Si has been the industry standard semiconductor used in PE devices, next-generation materials such as SiC and GaN have been explored as alternatives due to their wide band gaps and enhanced electric breakdown field. However, they are still limited by their manufacturing costs and high defect densities, leading to multiple high-throughput materials screening efforts for wide-band-gap semiconductors (WBGS) with promising electronic, thermal, and dielectric properties. This report compares methodologies in high-throughput PE materials design studies, analyzing the approximations used to calculate important PE properties including the electrical breakdown field, thermal conductivity, carrier mobility, and dielectric constant. It also emphasizes the need for further evaluation of the defect energetics of viable candidates to understand the defect tolerance, carrier concentration, and dopability of a material.