The exploration of smaller interconnect materials with minimum delays for applications in advanced packaging and integration has been one of the primary focuses of research in the packaging and integration aspects of the semiconductor industry. Thermocompression bonding of Cu has occupied a significant position in this regard. Nanotwinned Cu exhibits superior properties of high strength and ductility simultaneously with better electrical conduction. This report discusses the various aspects of research on thermocompression bonding of nanotwinned Cu and its mechanism along with its constraints and ways to overcome them. It also provides an overview of the mechanical behavior of nanotwinned Cu and its microstructures.