Dr. Shyam Surthi—Distinguished Member of Technical Staff in Advanced NAND Technology at Micron

Abstract: NAND Flash memory has consistently delivered massive bit growth for over three decades since its introduction. The innovations have ensured that the growth is also coupled with performance improvements and cost reduction. As the next-gen AI applications evolve, the demand for higher capacity and higher performance NAND will continue to grow. This requires a sustained scaling path and disruptive technologies to ensure the solutions remain costeffective. This talk will review technology advances in material, process, device and design that have enabled the NAND scaling in 2D as well as 3D era. Several technology proposals to overcome the costperformance trade-off of layer stacking are covered that will pave the path for continue cell scaling with gate all around (GAA) architecture to meet the future needs.

Biography: Shyam Surthi is currently Distinguished Member of Technical Staff in Advanced NAND Technology team. He received BS and MS in Chemical Engineering from the University Institute of Chemical Technology (Mumbai, India) and Ph.D. in electrical engineering from the University of Alabama, specializing in processing and characterization of Perovskite materials. Subsequently, he was a Postdoctoral Fellow at North Carolina State University developing Si-molecular devices for memory applications.