Eric P. Kvam - Research Interests

The propeprties of materials and devices are frequently dominated by defects and interfaces. The density, structures and properties of defects and interfaces in crystals must, therefore, be understood and controlled, especially in high performance materials. Our aims are to determine how crystal defects are introduced (or avoided) by specific processing routes, to determine the nature of the defects resulting from processing, and how the specific defects affect certain critical properties. We utilize a wide variety of experimental techniques due to the multitude of ways different defects exhibit their structures and properties. The most heavily used techique is transmission electron microscopy, which allows imaging, diffraction, and spectroscopy to be performed at nearly atomic resolution.

Recent Publications

V. Gopal, A.L. Vasiliev and E.P. Kvam, "Strain Relaxation and Dislocation Introduction in Lattice Mismatched InAs/GaP Heteroepitaxy", Philosophical Magazine A, 81(10), 2481-2501 (2001).

V. Gopal, E.-H. Chen, E.P. Kvam, and J.M. Woodall, "Electrochemical capacitance voltage profiling of the narrow band gap semiconductor InAs", Journal of Electronic Materials, 29(11), 1333-1339 (2000).

Victor Souw, V. Gopal, E.-H. Chen, E.P. Kvam, M. McElfresh, and J.M. Woodall, "Growth Temperature Dependence of Transport Properties of InAs Epilayers Grown on GaP", Applied Physics Letters, 77(8), 1176-1178 (2000).

V. Gopal, V. Souw, E.-H. Chen, E.P. Kvam, M. McElfresh, and J.M. Woodall, "Temperature-dependent transport properties of InAs films grown on lattice-mismatched GaP", Journal of Applied Physics, 87(3), 1350-1355 (2000).

P.H. Kvam and E.P. Kvam, "Discussion on Estimating Fatigue Curves with the Random Fatigue-Limit Model", Technometrics, 41(4), 292-294 (1999).

V. Gopal, E.-H. Chen, E.P. Kvam, and J.M. Woodall, "Behavior of a New Ordered Structural Dopant Source in InAs/(001)GaP Heterostructures", Journal of Vacuum Science and Technology B, 17(4), 1767-1772 (1999).

M.R. Pillai, S.C. Theiring, S.A. Barnett, B.W. Wessels, A. Desikan, and E.P. Kvam, "Effect of Sb Pre-deposition on the Compositional Profiles in MOVPE-grown InAsSb/InAs (111) Multi-quantum Wells", Journal of Crystal Growth, 208, 79-84 (2000).

P.H. Kvam and E.P. Kvam, "Discussion on Estimating Fatigue Curves with the Random Fatigue-Limit Model", submitted to Technometrics, (1999).

V. Gopal, E.-H. Chen, E.P. Kvam, and J.M. Woodall, "Behavior of a New Ordered Structural Dopant Source in InAs/(001)GaP Heterostructures," submitted to Journal of Vacuum Science and Technology B, (1999).

M.R. Pillai, S.C. Theiring, S.A. Barnett, B.W. Wessels, A. Desikan, and E.P. Kvam, "Effect of Sb Pre-deposition on the Compositional Profiles in MOVPE-grown InAsSb/InAs (111) Multi-quantum Wells," submitted to Applied Physics Letters, (1998).

R.B. Rogenski, K.H. Sandhage, A.L. Vasiliev, and E.P. Kvam, "The Effect of Excess Neodymia on the Grain Growth of the Solid-Solution Superconductor, Nd1+xBa2-xCu3Oy," Journal of Materials Research, 13(10) 2819-2832 (1998).

D.S. Linehan, E.P. Kvam, L. Hou, and M.W. McElfresh, "Control of Epitaxial Growth Orientation in YBa2Cu3O7-d Films on Vicinal SrTiO3 Substrates," Journal of Materials Research, 13(10) 2791-2799 (1998).

V. Gopal, T.P. Chin, E.P. Kvam, and J.M. Woodall, "Evidence for Misfit Dislocation Related Carrier Accumulation at the InAs/GaP Heterointerface," Applied Physics Letters, 72(18) 2319-2321 (1998).

R. Zhu, A.L. Vasiliev*, E.P. Kvam, V.K. Souw, and M.W. McElfresh, "SrTiO3 / c-YBa2Cu3O7-x Bilayer Thin Film Microstructure and Surface Roughness," submitted to Physica C, (1997).

S.H. Liou, R. Li, M. Chandrasekhar, H. Luo, M. Chen, W.B. Yelon, A.L. Vasiliev, and E.P. Kvam, "Neutron and Raman Scattering Studies of HgBa2CuO4+x," Journal of Superconductivity, 11(1) 59-62 (1997).

J.S. Kim and E.P. Kvam, "Study on the Possible Structural Transition in Nd2-xCexCuO4-d," Physica C, 292, 203-210 (1997).

A.L. Vasiliev, D.S. Linehan*, E.P. Kvam, L. Hou, and M.W. McElfresh, "Single Variant Orientational Growth Of YBa2Cu3O7-x on Vicinal (011) SrTiO3 Substrates Observed by Electron Microscopy," Physica C, 289, 243-250 (1997).

Kyle E. Beery, Manish Gulati, Eric P. Kvam, and Michael R. Ladisch, "Effect of Enzyme Modification of Corn Grits on Their Properties as an adsorbent in a Skarstrom Pressure Swing Cycle Dryer," Adsorption, 4, 321-335 (1998).

J.H. Elsner, E.P. Kvam, and A.F. Grandt, Jr., "Microstructure Analysis of Fatigue Initiation Life Extension by Reductions in Microporosity," Metallurgical and Materials Transactions, 28A(5) 1157-1168 (1997).

J.H. Elsner, E.P. Kvam, and A.F. Grandt, Jr., "Fracture Mechanics Analysis of Small Crack Growth and Fatigue Initiation Life Extension by Reductions in Microporosity," submitted to Fatigue and Fracture of Engineering Materials and Structures, (1997).

I-Ming Lee and C.G. Takoudis, Wei-Chung Wang, J.P. Denton, G.W. Neudeck, M.T. Koh and E.P. Kvam, "Process Improvements in the Selective Epitaxial Growth of Si1-xGex /Si Strained Layers in a Conventional Hot-Wall LPCVD System," Journal of the Electrochemical Society, 144(3) 1095-1099 (1997).

I.A. Golinkin, D.D. Ruff, E.P. Kvam, G.P. McCabe, and A.F. Grandt, Jr., "Application of Analysis of Variance (ANOVA) Statistical Methods to Breaking Load Corrosion Test," Journal of Testing and Evaluation, 25 (6), 565-570 (1997).

W.C. Wang, J.P. Denton, G.W. Neudeck, I-Ming Lee, C.G. Takoudis, M.T.K. Koh and E.P. Kvam, "Selective Epitaxial Growth of Si1-xGex/Si Strained-Layers in a tubular Hot-Wall LPCVD System,",Journal of Vacuum Science and Technology B, 15(1), 138-141 (1997).