Publications

Journal Publications

 

  1.  Saeed Mohammadi and C.R. Selvakumar,  “Analysis of BJTs, pseudo-HBTs and HBTs by including the effect of neutral base recombination, ” IEEE                 trans. on Electron Devices, vol. 41 no. 10, pp. 1708-1715, Oct. 1994
  2.  Saeed Mohammadi and C.R. Selvakumar, “Calculation of depletion layer thickness by including the mobile carriers, ” IEEE trans. on Electron Devices, vol. 43 no. 1, pp. 185-188, Jan. 1996.
  3. J.C. Garcia, C. Dua, S. Mohammadi, J-W. Park   and D. Pavlidis,  “Growth characterization of hydride-free chemical beam epitaxy and application to GaInP/GaAs heterojunction bipolar transistors,” Journal of Electronic Material , vol. 27 no. 5, pp. 442-445, May 1998.
  4. Saeed Mohammadi, S.M. Hubbard, C. Chelli, D. Pavlidis and B. Bayraktaroglu, “Photo-Luminescence and Transmission Electron Microscope studies of low- and high-reliability AlGaAs/GaAs HBTs,” J. Solid State Electronics , vol. 44 no. 4, pp. 739-746, April 2000.
  5. Saeed Mohammadi, D. Pavlidis and B. Bayraktaroglu,  “Relation between low-frequency noise and long-term reliability of AlGaAs/GaAs single power HBTs, ” IEEE trans. on Electron Devices, vol.47 no. 4, pp. 677-686, Apr. 2000.
  6. Jae-Woo Park, S. Mohammadi and D. Pavlidis, “Impact of Ni/Ge/Au/Ti/Au and Ti/Pt/Au collector metal on GaInP/GaAs HBT characteristics,” J. Solid State Electronics, vol. 44, pp. 1847-1852, 2000.
  7. Jae-Woo Park, S. Mohammadi, D. Pavlidis, C. Dua, J-L. Guyaux and J-C. Garcia, “Monolithic broadband transimpedance amplifiers and their high frequency small and large signal characteristics using CBE-based GaInP/GaAs HBT technology,” J. Solid State Electronics, vol. 44, pp. 2059-2067, 2000.
  8. Saeed Mohammadi, J-W. Park, D. Pavlidis, J.L. Guyaux and J.C. Garcia, “Design optimization and characterization of high-gain GaInP/GaAs HBT distributed amplifiers for high-bit-rate telecommunication, ” IEEE trans. on Microwave Theory and Techniques, vol. 48 no. 6, pp. 1038-1044, June 2000.
  9. Saeed Mohammadi and D. Pavlidis, “A non-fundamental theory of low-frequency noise in semiconductor devices, ” IEEE trans on Electron Devices, vol. 47 no. 11, pp.2009-2017, Nov. 2000.
  10. Z. Ma, S. Mohammadi, P.K. Bhattacharya, L.P.B. Katehi, S.A. Alterovitz and G.E. Ponchak, ”High Power X-band (8.4 GHz) SiGe/Si Heterojunction Bipolar Transistor, ” Electronic Letters, Vol 37 No 12, pp. 790 –791, June 2001.
  11. Jae-Woo Park, D. Pavlidis, S. Mohammadi, J-L. Guyaux and J-C Garcia, “Improved Emitter Transit Time Using AlGaAs-GaInP Composite Emitter in GaInP/GaAs Heterojunction Bipolar Transistors, ” IEEE trans. on Electron Devices, vol. 48, pp. 1297-1303, July 2001.
  12. Z. Ma, S. Mohammadi, L.-H. Lu, P. Bhattacharya, L.P.B. Katehi, S.A. Alterovitz and G.E. Ponchak,  "An X-Band High-Power Amplifier Using SiGe/Si HBT and Lumped Passive Components, ” IEEE Microwave and Wireless Components Letters, vol.11, no. 7, pp. 287-289, July 2001.
  13. Z. Ma, S. Mohammadi, P. Bhattacharya, L.P.B. Katehi, S.A. Alterovitz, G.E. Ponchak, , K. Strohm, J.F. Luy, “Ku-band (12.6GHz) SiGe/Si high-power heterojunction bipolar transistors, ” Electronic Letters, Vol. 37, No. 18, pp. 1-2, Aug 2001.
  14. Z. Ma, S. Mohammadi, P.K. Bhattacharya, L.P.B. Katehi, S.A. Alterovitz and G.E. Ponchak,  “A high power and high gain X-band Si/SiGe heterojunction bipolar transistors ,”  IEEE trans. on Microwave Theory and Techniques, Vol 50, No 4, April 2002, pp.1101-1108.
  15. Yumin Lu, D. Peroulis, S. Mohammadi, L.P.B. Katehi, “A MEMS reconfigurable matching network for a class AB amplifier,” IEEE  Microwave and Wireless Components Letters, Volume: 13 , Issue: 10 , Oct. 2003, pp. 437 – 439.
  16. W.Y. Liu, J. Suryanarayanan, J. Nath, S. Mohammadi, L.P.B. Katehi, M.B. Steer, “Toroidal inductors for radio-frequency integrated circuits,” IEEE trans on Microwave Theory and Techniques, Volume 52 , Issue: 2 , Feb. 2004  Pages:646 – 654.
  17. B. S. Makki, M.G. Fard, S. Mohajerzadeh, T. Maleki, S. Mohammadi, M. Miri and E. Soleimani, “A novel ultra-violet assisted anisotropic etching of plastic to realize micro-gears,” Sensors and Actuators A: Physical, A115 N2-3, 2004, pp. 563-570.
  18. Barry Perlman, L. Katehi, A. Ballato, N. Engheta, D. Peroulis and S. Mohammadi, “Nanotechnology and Active Thin Films for Compact RF Components and Agile Systems,” Proceedings of Ferroelectronics, Volume 342, May 2006, pp. 163-182.
  19. R.R. Lahiji, K.J. Herrick, Y. Lee; A. Margomenos, S. Mohammadi, L.P.B. Katehi, “Multiwafer vertical interconnects for three-dimensional integrated circuits,” IEEE trans on Microwave Theory and Techniques, Volume 54 , Issue: 6 , June 2006  pp. 2699 - 2706.
  20. K. Lee, S. Mohammadi, P. Bhattacharya and L.P.B. Katehi, “Compact Models Based on Transmission-Line Concept for Integrated capacitors and Inductors,” IEEE Trans on Microwave Theory and Techniques, Volume 54,  Issue 12,  Part 1,  Dec. 2006, pp. 4141 - 4148.
  21. K. Lee, S. Mohammadi, P. Bhattacharya and L.P.B. Katehi, “A Wideband Compact Model for Integrated Inductors,” IEEE Microwave and Wireless Components Letters, Volume 16, Issue 9, Sept. 2006, pp. 490 – 492.
  22. D. Weon, J. Jeon and S. Mohammadi, “High-Q Micromachined 3-D Integrated Inductors for High Frequency Applications,” Journal of Vacuum Science and Technology B. Volume 25, Issue 1, Jan/Feb 2007.
  23. D. Weon, J. Kim  and S. Mohammadi, “Design of high-Q 3-D integrated inductors for high frequency applications,” Journal of Analog Integrated Circuits and Signal Processing, Volume 50, No 2, Feb 2007, pp. 89-93.
  24.  H. Sharifi, T. Choi and S. Mohammadi, “Self-Aligned Wafer-Level Integration Technology with High Density Interconnects and Embedded Passives,” to appear in IEEE trans. on Advanced Packaging, Feb 2007.
  25.  L. Katehi, W. Chappell, S. Mohammadi, A. Margomenos and M. Steer, “Heterogeneous Wafer-Scale Circuit Architectures,” IEEE Microwave Magazine,   Feb 2007, pp. 52-69.
  26. S. Kim, Y. Xuan, P.D. Ye, S. Mohammadi and M. Shim, “Atomic Layer deposited Al2O3 for gate dielectric and passivation layer of single-walled carbon nanotube transistors,” Applied Physics Letters (APL), 90, 163108 (2007).
  27. H. Sharifi and S. Mohammadi, “Heterogeneous Integration of 10Gb/s CMOS Optoelectronic Receivers using Self-Aligned Wafer-Level Integration Technology,” IEEE Photonic Technology Letters, Volume 19,  Issue 14,  July15, 2007 pp. 1066 - 1068
  28. H. Lee and S. Mohammadi, “A subthreshold Low Phase Noise CMOS LC VCO for Ultra Low Power Applications,” to appear in IEEE Microwave and Wireless Components Letters, Nov 2007.
  29.  T. Choi, H. Sharifi, H.H. Sigmarsson, W.J. Chappell, S. Mohammadi and L.P.B. Katehi, “3-D Integration of 10GHz Filter and CMOS Receiver Front-End,” to appear in IEEE trans on Microwave Theory and Techniques.
  30. H.C. Lin, S. Kim, D. Chang, Y. Xuan, S. Mohammadi, P.D. Ye, Y. Xuan, G. Lu, A. Facchetti and T.J. Marks, “Direct-current and radio-frequency characterizations of GaAs metal-insulator-semiconductor field-effect transistors enabled by self-sssembled nanodielectrics,” Applied Physics Letters (APL), 91, 092103 (2007).

Conference Publications

  1. J-C. Garcia, C. Dua, S. Mohammadi and D. Pavlidis, “Hydride-free chemical beam epitaxy processes and application to GaInP/GaAs heterojunction bipolar transistors,” 38th Electronic Material Conference, Santa Barbara, CA, June 1996
  2. Saeed Mohammadi, D. Pavlidis and B. Bayraktaroglu, “A novel approach for determining reliability of AlGaAs/GaAs single HBTs from low-frequency noise characteristics,” Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Scheveningen, The Netherlands, May 1997.
  3. Jae-Woo Park, D. Pavlidis, S. Mohammadi, C. Dua and J.C. Garcia, “Improved high frequency performance by composite emitter AlGaAs/GaInP heterojunction bipolar transistors fabricated using chemical beam epitaxy,” Proceedings of the 24th International Symposium on Compound Semiconductors (ISCS 97), San Diego, CA, pp. 439-442, September 7-11, 1997.
  4. Saeed Mohammadi, D. Pavlidis and B. Bayraktaroglu,  “ Low-frequency noise characterization of high- and low-reliability AlGaAs/GaAs HBTs,” Proceedings of the 24th International Symposium on Compound Semiconductors  (ISCS 97), San Diego, CA, pp. 447-450, September 7-11, 1997.
  5. B. Bayraktaroglu, G. Dix, S. Mohammadi and D. Pavlidis, “AlGaAs/GaAs HBT reliability: dependence on material and correlation to baseband noise,” GaAs IC Symposium Technical Digest 1997, Anaheim, CA, pp.157-160, October 12-15, 1997.
  6. D. Sawdai, D. Pavlidis, S. Mohammadi, “Power amplification using NPN and PNP InP HBTs and application to push-pull circuits,” 22nd Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE 98), Zeuthen, Germany, pp. 45-46, May 24-27, 1998.
  7. J-W. Park, S. Mohammadi, D. Pavlidis, “GaInP/GaAs HBT technology using TBA, TBP precursors and application to optoelectronic circuits,” 22nd Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE 98), Zeuthen, Germany, pp. 33-34, May 24-27, 1998.
  8. Jae-Woo Park, Saeed Mohammadi, D. Pavlidis, C. Dua, J.L. Guyaux and J.C. Garcia, “GaInP/GaAs HBT broadband monolithic transimpedance amplifiers and their high frequency small and large signal characteristics, ” IEEE MTT-S International Microwave Symposium Digest, IEEE Radio Frequency Integrated Circuits, (RFIC 98), Baltimore, MD, Vol. 1, pp. 39-42, June 7-9, 1998.
  9. Saeed Mohammadi, J-W. Park, D.Pavlidis, C. Dua, J.L. Guyaux and J.C. Garcia, “High-gain GaInP/GaAs HBT monolithic transimpedance amplifier for high-speed optoelectronic receivers, ” International Electron Device Meeting (IEDM 98), San Fransisco, CA, pp. 661-664 December 6-9, 1998.
  10. J-W. Park, D. Pavlidis, S. Mohammadi, J.L. Guyaux and J-C. Garcia, “Material and processing technology for manufacturing of high speed, high reliability GaInP/GaAs HBT based ICs,” International Conference on GaAs Manufacturing Technology (MANTECH), Vancouver, BC, Canada, PP. 173-176, May 1999.
  11. Saeed Mohammadi, J-W. Park, D. Pavlidis, C. Dua, J.L. Guyaux and J.C. Garcia,  “Optimal design and experimental characterization of high-gain HBT distributed amplifiers, ” IEEE MTT-S International Microwave Symposium (IMS 99), Anaheim, CA, v. 2, pp. 685-688, June 13-19, 1999.
  12. Saeed Mohammadi, L-H. Lu, Z. Ma, L.P.B. Katehi, P.K. Bhattacharya, G.E. Ponchak and E.T. Croke, “Microwave Noise of Si/Si0.6Ge0.4                           Heterojunction Bipolar Transistors,” Silicon Monolithic Integrated Circuits in RF Systems, pp. 15-18, April 2000.
  13. L-H. Lu, S. Mohammadi, G.E. Ponchak, P.K. Bhattacharya and L.P.B. Katehi, “Design and implementation of micromachined lumped quadrature (90o) hybrids, ” IEEE MTT-S International Microwave Symposium (IMS 01), Phoenix, AZ, May 2001.
  14. L-H. Lu, S. Mohammadi, Z. Ma, G.E. Ponchak, S.A. Alterovitz, K.M. Strohm, J.F. Luy, P.K. Bhattacharya and L.P.B. Katehi, “ SiGe power heterojunction bipolar transistors (HBTs) fabricated by fully self-aligned double mesa technology, ” IEEE MTT-S International Microwave Symposium (IMS 01) , Phoenix, AZ, May 2001.
  15. Z. Ma, S. Mohammadi, P. Bhattacharya, L.P.B. Katehi, G.E. Ponchak, S.A. Alterovitz, K. Strohm, J.F. Luy, “Si/SiGe Power Heterojunction Bipolar Transistors for Ku-Band Applications,” Late news paper in 59th Device Research Conference (DRC 01), Notre Dame, IN, June 2001.
  16. Z. Ma, S. Mohammadi, P. Bhattacharya, L.P.B. Katehi, G.E. Ponchak, S.A. Alterovitz, K. Strohm, J.F. Luy, “A 180mW 18GHz Si/SiGe power heterojunction bipolar transistor,” IEEE Topical Workshop on Power Amplifiers for Wireless Communications, Sand Diego, CA, Sep 2001.
  17. Z. Ma, S. Mohammadi, P. Bhattacharya, L.P.B. Katehi, G.E. Ponchak, S.A. Alterovitz, “Power Performance of X-Band Si/SiGe/Si HBTs, ” Silicon Monolithic Integrated Circuits in RF Systems, Ann Arbor, MI, pp. 170-176, Sep. 2001.
  18. Saeed Mohammadi, Z. Ma, J. Park, P. Bhattacharya, L. P. B. Katehi, G. E. Ponchak, S.A. Alterovitz, K. M. Strohm, J.-F. Luy, "SiGe/Si Power HBTs for X- to K-Band Applications,” IEEE Radio Frequency Integrated Circuits, (RFIC 02), Seattle, WA, June 2002, Page(s): 373 -376.
  19. W.Y. Liu. S. Mohammadi, L.P.B. Katehi, M.B. Steer, “Polymer-membrane-supported fin-line frequency multipliers,” Radio and Wireless Conference, 2002. RAWCON 2002. IEEE , 2002 Page(s): 281 -284.
  20. Z. Ma; S. Mohammadi, P. Bhattacharya, L.P.B. Katehi, S.A. Alterovitz, G.E. Ponchak. , “An 8.4 GHz SiGe/Si HBT-based MMIC power amplifier,” Bipolar/BiCMOS Circuits and Technology Meeting, 2002.Page(s): 151 -154.
  21. Z. Ma, S. Mohammadi, P. Bhattacharya, L.P.B. Katehi, G.E. Ponchak, S.A. Alterovitz, K. Strohm, J.F. Luy, “SiGe-Based HBTs for High-Frequency Microwave Power Amplification,” 2002 Asia Pacific Microwave Conference, Kyoto, Japan Nov 19-22, 2002, pp. 1563-1566.
  22. W.Y. Liu, Saeed Mohammadi, L.P.B. Katehi, H. Khalkhali, K. Kurabayashi, “Polymer micro-heat-pipe for InP/InGaAs technologies,” IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications (EDMO), 2002. pp. 143 –148.
  23. W.Y. Liu, Saeed Mohammadi, L.P.B. Katehi, M.B. Steer “Polymer-membrane-supported fin-line frequency multipliers,” IEEE Radio and Wireless Conference (RAWCON) 2002. pp. 281 –284.
  24. J. Suryanarayanan, W.Y. Liu, Saeed Mohammadi, M.B. Steer, L.P.B. Katehi, "Toroidal Inductors for Integrated Radio Frequency and Microwave Circuits,” IEEE Radio Frequency Integrated Circuits, (RFIC 03), Philadelphia, PA, June 2003, pp. 607-610.
  25. Maleki,. S. Mohajerzadeh and. S. Mohammadi "A novel ultra-violet assisted micromachining of Plastics" Euro-Senosrs, Portugal. (2003).
  26. Jong-Hyeok Jeon, E.J.  Inigo, M.T. Reiha, T. Choi, Y. Lee, S. Mohammadi, L.P.B. Katehi, “The effect of low-k dielectrics on RFIC inductors,” 33rd European Microwave Conference,
    Volume 1,  7-9 Oct. 2003 Page(s):53 – 56.
  27.   M.T. Reiha, T. Choi, J. Jeon, S. Mohammadi and L.P.B. Katehi, “High-Q differential inductors for RFIC design,” 33rd European Microwave Conference, Volume 1,  7-9 Oct. 2003 Page(s):127– 130.
  28. D. Weon, Jong-Hyeok Jeon, Jeong-Il Kim, S. Mohammadi, L.P.B. Katehi, “High-Q integrated 3-D inductors and transformers for high frequency applications,”  IEEE MTT-S International Microwave Symposium (IMS 04),Volume: 2 , June 6-11, 2004, Pages:877 – 880.
  29. Kok-Yan Lee, B. N Johnson, S. Mohammadi, P. K. Bhattacharya, L.P.B. Katehi, “High yield reduced process tolerance self-aligned double mesa process technology for SiGe power HBTs," IEEE MTT-S International Microwave Symposium (IMS 04),Volume: 2 , June 6-11, 2004, Pages: 963 - 966
  30. D. Peroulis, S. Mohammadi and L.P.B. Katehi, “High Q integrated passive elements for high frequency applications,” Silicon Monolithic Radio Frequency Conference, 8-10 Sept. 2004 Page(s):25 - 28
  31. Kok-Yan Lee, B. N Johnson, S. Mohammadi, P. K. Bhattacharya, L.P.B. Katehi and G. Ponchak, “An 8.5GHz SiGe-Based Amplifier using Fully Self-Aligned Double Mesa SiGe HBTs,” Silicon Monolithic Radio Frequency Conference, Oct 2004, pp. 311-313.
  32. H. Sharifi, S. Mohammadi and M. Mojarradi, “ Emerging heterogeneous integration technologies for extreme environment ,” GOMAC-Tech 05, April 2005
  33. Sunkook Kim, T. Choi, L. Rabieirad, J. Jeon, M. Shim and Saeed Mohammadi, “A Poly-Si Gate Carbon Nanotube Field Effect Transistor for High Frequency Applications,” IEEE MTT-S International Microwave Symposium (IMS 05), June 12-17, 2005, Long Beach CA.
  34. Dae-Hee Weon, Jeong-Il Kim, Jong-Hyeok Jeon, Saeed Mohammadi, and Linda P. B. Katehi, “High Performance 3-D Micro-Machined Inductors on CMOS Substrate,” IEEE MTT-S International Microwave Symposium (IMS 05), June 12-17, 2005, Long Beach CA.
  35. Jeong-Il Kim, D. Weon, J. Jeon, S. Mohammadi and L.P.B. Katehi, “Design of Toroidal Inductors Using Stressed Metal Technology,” IEEE MTT-S International Microwave Symposium (IMS 05), June 12-17, 2005, Long Beach CA.
  36. L. Rabieirad, S. Kim, M. Shim, S. Mohammadi, “Doubly clamped single-walled carbon nanotube resonators operating in MHz frequencies,” 5th IEEE Conference on Nanotechnology (IEEE NANO 05), vol. 2, 11-15 July 2005 Page(s):653 - 656
  37. S. Kim, C. Wang, M. Shim and S. Mohammadi, “Comparison of single-walled carbon nanotube transistors fabricated by dielectrophoresis and CVD growth,” 5th IEEE Conference on Nanotechnology (IEEE NANO 05), 11-15 July 2005 Page(s):868 - 871 vol. 2
  38. Kok-Yan Lee, S. Mohammadi, P.K. Bhattacharya and L.P.B. Katehi, “Scalable compact models for embedded passives,” 35th European Microwave Conference, Volume 1, 4-6 Oct. 2005.
  39. R.R. Lahiji, K.J. Herrick, S. Mohammadi and L.P.B. Katehi, “Low loss multi-wafer vertical interconnects for three dimensional integrated circuits,” 35th European Microwave Conference, Volume 1,  4-6 Oct. 2005
  40. T. Choi, H. Lee, L.P.B. Katehi and S. Mohammadi, “A low phase noise 10 GHz VCO in 0. 18 um CMOS process,” 35th European Microwave Conference, 3-4 Oct. 2005 Page(s):273 – 276
  41. H. Lee, T. Choi, S. Mohammadi and L.P.B. Katehi, “An extremely low power 2 GHz CMOS LC VCO for wireless communication applications,” 35th European Microwave Conference, 3-4 Oct. 2005 Page(s):31 – 34
  42. H. Lee and S. Mohammadi, “A 3GHz subthreshold CMOS low noise amplifier,” IEEE Radio Frequency Integrated Circuits, (RFIC 06), San Francisco, CA, 11-13 June 2006.
  43. L. Rabieirad and S. Mohammadi, “Single-Walled Carbon Nanotube Mixers,” IEEE MTT-S International Microwave Symposium (IMS 06), June 2006 Page(s):2055 - 2058
  44. D. Weon, L.P.B. Katehi and S. Mohammadi, “3-D Integrated Inductors and Transformers on Liquid Crystal Polymer Substrate," IEEE MTT-S International Microwave Symposium (IMS 06), June 2006 Page(s):1381 – 1384
  45. D. Weon and S. Mohammadi, “High Performance 3D Helical RF Transformers,” accepted for IEEE MTT-S International Microwave Symposium (IMS 07).
  46. H. Sharifi and S. Mohammadi, “Heterogeneously Integrated 10Gb/s CMOS Optoelectronic Receiver,” IEEE Radio Frequency Integrated Circuits (RFIC 07), 3-5 June 2007 pp:515 – 518, Hawaii.
  47. H. Lee and S. Mohammadi, “A 500uW 2.4GHz CMOS Subthreshold Mixer for Ultra Low Power Applications,” accepted for IEEE Radio Frequency Integrated Circuits (RFIC 07), 3-5 June 2007 pp:325 – 328, Hawaii.
  48. S.Kim, D. Chang, Y. Xuan, P. Ye and S. Mohammadi, “Interface study of single-walled carbon nanotube transistors using low-frequency noise,” 65th Device Research Conference (DRC 07), Notre Dame, IN, June 2007.
  49. S. Ju, S. Kim, G. Lu, A. Facchetti, S. Mohammadi, T.J. Marks and D.B. Janes, “Interface study of ZnO nanowire transistors using low-frequency noise and temperature-dependent I-V measurements,” Electronic Materials Conference (EMC 07), Notre Dame, IN, June 2007.
  50. R. Lahiji, H. Sharifi, S. Mohammadi and L.P.B. Katehi, “Parylene-N as a Passivation Layer for Microwave Applications,” to be presented in Advance Packaging Materials Symp. (APM) Oct. 2007, San Jose, CA.



Saeed Mohammadi
Purdue University, School of Electrical and Computer Engineering, 2264 Birck Nanotechnology Center, West Lafayette, Indiana 47906, Phone: 765-494-3557, Fax: 765-494-6440, E-mail: saeedm at purdue dot edu