Journal Publications
- Submitted Articles
- Nanoelectronics
- NEMO Related Work at Raytheon / TI / UTD
- Quantum Dots, RTD's and 2DEG's at Purdue
- Non-linear Optics at Purdue
Submitted Articles
"High-Performance Complementary III-V Tunnel FETs with Strain Engineering"
arXiv:1605.009552016Not Cited Yet
"NEMO5: Achieving High-end Internode Communication for Performance Projection Beyond Moore's Law"
arXiv:1510.046862015Not Cited Yet
"Bulk and sub-surface donor bound excitons in silicon under electric fields"
arXiv:1510.000652015Not Cited Yet
"Doping Profile Engineered Triple Heterojunction TFETs With 12-nm Body Thickness"
IEEE Transactions on Electron Devices, June 2021, Vol. 68, No. 6, Pages 3104-3111;doi: 10.1109/TED.2021.30751902021Not Cited Yet
"MoS2 for Enhanced Electrical Performance of Ultrathin Copper Films"
ACS Applied Materials and Interfaces 11(31), pp. 28345-2835;doi:10.1021/acsami.9b033812019paperNot Cited Yet
"Room-Temperature Graphene-Nanoribbon Tunneling Field-Effect Transistors"
npj 2D Mater Appl 3, 43 (2019);doi:10.1038/s41699-019-0127-12019paperNot Cited Yet
"WSe2 Homojunction Devices: Electrostatically Configurable as Diodes, MOSFETs, and Tunnel FETs for Reconfigurable Computing"
Small, Vol. 15, Issue 14 (2019);doi:10.1002/smll.2019027702019paperNot Cited Yet
"Thermal boundary resistance predictions with non-equilibrium Green's function and molecular dynamics simulations"
Applied Physics Letters, Vol. 115, Issue 23 (2019);doi :10.1063/1.51250372019paperNot Cited Yet
"Band-tail Formation and Band-gap Narrowing Driven by Polar Optical Phonons and Charged Impurities in Atomically Resolved III-V Semiconductors and Nanodevices"
Physical Review Applied 12, 044045, October 2019;doi: 10.1103/PhysRevApplied.12.0440452019paperNot Cited Yet
"Microwave-induced capacitance resonances and anomalous magneto resistance in double quantum wells"
Journal of Applied Physics, Vol. 125, Issue 23, June 2019;doi: 10.1063/1.50994402019Not Cited Yet
"Superior Performance of 5-nm Gate Length GaN Nanowire nFET for Digital Logic Applications"
IEEE Electron Device Letters, Volume: 40, Issue: 6, Pages: 874 - 877, June 2019;doi:10.1109/LED.2019.28944162019Not Cited Yet
"Non-orthogonal tight-binding models: Problems and possible remedies for realistic nano-scale devices"
Journal of Applied Physics, Vol. 125, Issue 14, April 2019;doi: 10.1063/1.50561782019Not Cited Yet
"NemoViz: A visual interactive system for atomistic simulations design"
Visualization in Engineering, November 2018, Volume 6, Number 6;doi:10.1186/s40327-018-0067-42018Not Cited Yet
"Complementary Black Phosphorus Tunneling Field-Effect Transistors"
ACS Nano, Publication Date (Web): December 18, 2018;doi: 10.1021/acsnano.8b064412018Not Cited Yet
"Alloy Engineered Nitride Tunneling Field Effect Transistor: A solution for the challenge of heterojunction TFETs"
IEEE Transactions on Electron Devices, 2018 (Early Access);doi: 10.1109/TED.2018.28777532018paperNot Cited Yet
"Atomistic tight-binding study of contact resistivity in Si/SiGe PMOS Schottky contacts"
IEEE Transactions on Electron Devices, 2018 (Early Access), Pages 1-12018paperNot Cited Yet
"Switching Mechanism and the Scalability of vertical-TFETs"
, 2018, Vol. 65, No. 7, Pages 3065-30682018arXivNot Cited Yet
"Dramatic Impact of Dimensionality on the Electrostatics of P-N Junctions and Its Sensing and Switching Applications"
IEEE Transactions on Nanotechnology, 2018, Vol. 17, No. 2, Pages 293-2982018
"Explicit screening full band quantum transport model for semiconductor nanodevices"
Journal of Applied Physics 123, 244501 (2018);https://doi.org/10.1063/1.50314612018Not Cited Yet
"Theoretical study of strain-dependent optical absorption in doped Stranski-Krastanov grown InAs/InGaAs/GaAs/AlGaAs quantum dots"
Beilstein Journal of Nanotechnology, 2018, 9, 1075–1084;doi:10.3762/bjnano.9.992018Not Cited Yet
"Interface induced spin-orbit interaction in silicon quantum dots and prospects for scalability"
Physical Review B 97, 241401 (2018);doi: 10.1103/PhysRevB.97.2414012018arXivNot Cited Yet
"Channel Thickness Optimization for Ultrathin and 2-D Chemically Doped TFETs"
IEEE Transactions on Electron Devices, 2018, Vol. 65, No. 10, Pages 4614-4621;doi: 10.1109/TED.2018.28624082018
"Grain-Boundary Resistance in Copper Interconnects: From an Atomistic Model to a Neural Network"
Physical Review Applied 9 (4), 044005;doi: 10.1103/PhysRevApplied.9.0440052018PaperNot Cited Yet
"Optimization of edge state velocity in the integer quantum Hall regime"
Physical Review B 97, 085302 (2018);doi: 10.1103/PhysRevB.97.0853022018arXivNot Cited Yet
"Sensitivity Challenge of Steep Transistors"
IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 65, NO. 4, APRIL 2018;doi:10.1109/TED.2018.28080402018arXivNot Cited Yet
"Two-electron states of a group V donor in silicon from atomistic full configuration interaction"
Phys. Rev. B 97, 195301 – Published 2 May 2018;doi: 10.1103/PhysRevB.97.1953012018arXivNot Cited Yet
"Robust Mode Space Approach for Atomistic Modeling of Realistically Large Nanowire Transistors"
Journal of Applied Physics 123, 044303 (2018);doi:10.1063/1.50102382018arXivNot Cited Yet
"Atomistic Modeling trap-assisted tunneling in hole tunnel FETs"
Journal of Applied Physics 123 (2018);doi: 10.1063/1.50187372018paperNot Cited Yet
"All-electrical control of donor-bound electron spin qubits in silicon"
Nat Nanotechnol. 2017 Oct;12(10):958-962; doi: 10.1038/nnano.2017.154. Epub 2017 Aug 14.2017arXivNot Cited Yet
"Control of interlayer delocalization in 2H transition metal dichalcogenides"
Journal of Applied Physics 122, 224302 (2017);doi:10.1063/1.50059582017
"Quantitative Multi-Scale, Multi-Physics Quantum Transport Modeling of GaN-Based Light Emitting Diodes"
Phys. Status Solidi A 2017, 1700662, 27 December 2017;doi:10.1002/pssa.2017006622017wileyNot Cited Yet
"Transport in vertically stacked hetero-structures from 2D materials"
IOP Journal of Physics: Conf. Series 864 (2017) 012053;doi:10.1088/1742-6596/864/1/0120532017Not Cited Yet
"Thickness Engineered Tunnel Field-Effect Transistors based on Phosphorene"
IEEE Electron Device Letters, Volume: 38, Issue: 1, Jan. 2017, Pages: 130 - 133;doi: 10.1109/LED.2016.26275382016arXivNot Cited Yet
"Combination of Equilibrium and Nonequilibrium Carrier Statistics Into an Atomistic Quantum Transport Model for Tunneling Heterojunctions"
IEEE Transactions on Electron Devices, Vol: 64, Issue: 6, Page(s): 2512 - 2518, June 2017;doi:10.1109/TED.2017.26906262017arxivNot Cited Yet
"Statistical Approach for Increasing the Accuracy in Supervised Learning Algorithms"
The IPSI BgD Transactions on Internet Research. Special Issue: Machine Learning and Signal/Image Processing, 2017.2017arXivNot Cited Yet
"Silicon quantum processor with robust long-distance qubit couplings"
Nature Communications 8, Article number: 450 (2017);doi:10.1038/s41467-017-00378-x2015natureNot Cited Yet
"Low-temperature thermal transport and thermopower of monolayer transition metal dichalcogenide semiconductors"
JOURNAL OF PHYSICS-CONDENSED MATTER, Vol: 29, Issue: 40, Article Number: 405701, OCT 11, 2017;doi:10.1088/1361-648X/aa80872017iopNot Cited Yet
"A Multiscale Modeling of Triple-Heterojunction Tunneling FETs"
IEEE Transactions on Electron Devices, Volume: 64, Issue: 6, Pages: 2728 - 2735, June 2017;doi:10.1109/TED.2017.26906692017arXivieeexploreNot Cited Yet
"Creating impact in the digital space: digital practice dependency in communities of digital scientific innovations"
Scientometrics, January 2017, Volume 110, Issue 1, pp 417–442;doi:10.1007/s11192-016-2106-z2017springerNot Cited Yet
"Insights from simple models for surface states in nanostructures"
European Journal of Physics, Volume 38, 025501;doi:10.1088/1361-6404/aa57ca2017IOPNot Cited Yet
"Performance degradation of superlattice MOSFETs due to scattering in the contacts"
Journal of Applied Physics, Vol 120, 224501, December 2016;doi: 10.1063/1.49713412016AIPNot Cited Yet
"Incoherent transport in NEMO5: realistic and efficient scattering on phonons"
Journal of Computational Electronics, pp 1–7, 2016;doi:10.1007/s10825-016-0845-y2016Not Cited Yet
"Scalable GaSb/InAs tunnel FETs with non-uniform body thickness"
IEEE Transactions on Electron Devices, Volume: 64, Issue: 1, Pages: 96 - 101, Jan. 2017;doi: 10.1109/TED.2016.26247442016arXivNot Cited Yet
"P-Type Tunnel FETs With Triple Heterojunctions"
IEEE Journal of the Electron Devices Society, Volume: 4, Issue: 6, Page(s): 410 - 415, Nov. 2016;doi:10.1109/JEDS.2016.26149152016arXivNot Cited Yet
"Characterizing Si:P quantum dot qubits with spin resonance techniques"
Scientific Reports 6, Article number: 31830 (2016);doi:10.1038/srep318302016Not Cited Yet
"Büttiker probes for dissipative phonon quantum transport in semiconductor "
APPLIED PHYSICS LETTERS 108, 113107 (2016);doi:10.1063/1.49443292016arXivNot Cited Yet
"General Retarded Contact Self-energies in and beyond the Non-equilibrium Green’s Function Method"
Journal of Physics: Conference Series Volume 696, conference 1, 012019 (2016)2016Not Cited Yet
"Surface Passivation in Empirical Tight Binding"
IEEE TRANSACTIONS ON ELECTRON DEVICES VOL. 63, Issue: 3, Page(s): 954 - 958, February (2016);doi:10.1109/TED.2016.25190422016arXivNot Cited Yet
"Transferable tight-binding model for strained group IV and III-V materials and heterostructures"
PHYSICAL REVIEW B 94, 045311 (2016), published 21 July 2016;doi:10.1103/PhysRevB.94.0453112016Not Cited Yet
"Saving Moore's Law Down To 1nm Channels With Anisotropic Effective Mass"
Scientific Reports 6, Article number: 31501 ;doi: 10.1038/srep31501 (2016)2016arXivNot Cited Yet
"Optimum High-k Oxide for the Best Performance of Ultra-scaled Double-Gate MOSFETs"
IEEE Transactions on Nanotechnology (2016);doi:10.1109/TNANO.2016.25834112016Not Cited Yet
"Few-layer Phosphorene: An Ideal 2D Material For Tunnel Transistors"
Scientific Reports 6, Article number: 28515 (2016);doi:10.1038/srep285152016arXivNot Cited Yet
"Design Rules for High Performance Tunnel Transistors from 2D Materials"
IEEE Journal of Electron Device Society (J-EDS), Volume: 4, Issue: 5, Page(s): 260 - 265, Sept. 2016 ;doi:10.1109/JEDS.2016.25682192016arXivNot Cited Yet
"Universal Behavior of Atomistic Strain in Self-Assembled Quantum Dots"
IEEE JOURNAL OF QUANTUM ELECTRONICS, vol. 52, no. 7, july 2016;doi:10.1109/JQE.2016.25739592015
"From Fowler-Nordheim to Non-Equilibrium Green's Function Modeling of Tunneling"
IEEE Transactions on Electron Devices, Volume:63 , Issue: 7, July 2016;doi:10.1109/TED.2016.25655822016
"Transport of Spin Qubits with Donor Chains under Realistic Experimental Conditions"
PHYSICAL REVIEW B 94, 045314 (2016), published 25 July 2016;doi:10.1103/PhysRevB.94.0453142016arXivNot Cited Yet
"Configurable Electrostatically Doped High Performance Bilayer Graphene Tunnel FET"
IEEE Journal of the Electron Devices Society, Volume:4 ,Issue: 3, Page(s): 124 - 128, May 2016;doi:10.1109/JEDS.2016.25399192015preprintNot Cited Yet
"Spatial Metrology of Dopants in Silicon with Exact Lattice Site Precision"
Nature Nanotechnology 11, 763–768 (2016);doi:10.1038/nnano.2016.832016preprintNot Cited Yet
"High-Current Tunneling FETs With ( 1\bar {1}0 ) Orientation and a Channel Heterojunction"
IEEE Electron Device Letters, Volume:37 , Issue: 3, Page(s): 345 - 348, March 2016;doi:10.1109/LED.2016.25232692016paperNot Cited Yet
"Unfolding and effective bandstructure calculations as discrete real-and reciprocal-space operations"
Physica B: Condensed Matter, Volume 491, 15 June 2016, Pages 22–30;doi:10.1016/j.physb.2016.03.0112016[paper]Not Cited Yet
"Categorizing Users of Cloud Services"
Service Science, Volume 8 Issue 1, March 2016, In Progress, pp. 59-702016paperNot Cited Yet
"Highly tunable exchange in donor qubits in silicon"
npj Quantum Information 2, 16008 (2016);doi:10.1038/npjqi.2016.82016preprintNot Cited Yet
"Quantum simulation of the Hubbard model with dopant atoms in silicon"
Nature Communications 7, 11342, 20 April 2016;doi:10.1038/ncomms113422016preprintNot Cited Yet
"Design and Simulation of GaSb/InAs 2D Transmission-Enhanced Tunneling FETs"
IEEE ELECTRON DEVICE LETTERS, VOL: 37, Issue: 1, Pages: 107 - 110, JANUARY 2016;doi:10.1109/LED.2015.24976662016paperNot Cited Yet
"Quantum Transport in AlGaSb/InAs TFETs With Gate Field In-Line With Tunneling Direction"
IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 62, Issue: 8, Page(s): 2445 - 2449, AUGUST 2015;doi: 10.1109/TED.2015.24435642016Not Cited Yet
"Theoretical study of strain-dependent optical absorption in Stranski-Krastanov grown InAs/InGaAs/GaAs/AlGaAs quantum dots"
arXiv:1502.077262015arxivNot Cited Yet
"Design and discovery of materials guided by theory and computation"
npj Computational Materials 1, Article number: 15007 (2015);doi:10.1038/npjcompumats.2015.72015Not Cited Yet
"Can Homojunction Tunnel FETs Scale Below 10nm?"
IEEE ELECTRON DEVICE LETTERS, vol. 37, Issue: 1, Page(s): 115-118, January, 2016;doi:10.1109/LED.2015.25018202015paperNot Cited Yet
"Electrically Tunable Bandgaps in Bilayer MoS2"
Nano Lett., 2015, 15 (12), pp 8000–80072015Not Cited Yet
"A predictive analytic model for high-performance tunneling field-effect transistors approaching non-equilibrium Green's function simulations"
Journal of Applied Physics, 118, 164305 (2015);doi:10.1063/1.4934682A2015Not Cited Yet
"Dielectric Engineered Tunnel Field-Effect Transistor"
IEEE ELECTRON DEVICE LETTERS, vol. 36, Issue: 10, Page(s): 1097-1100, October, 2015;doi:10.1109/LED.2015.24741472015Not Cited Yet
"In-surface confinement of topological insulator nanowire surface states"
Appl. Phys. Lett., vol. 107, no. 12, pp. 121605, Sep. 2015;doi:10.1063/1.49319752015
"Numerical guidelines for setting up a k.p simulator with applications to quantum dot heterostructures and topological insulators"
Journal of Computational Electronics, 02 Aug 2015;doi:10.1007/s10825-015-0729-62015Not Cited Yet
"Tight-binding analysis of Si and GaAs ultrathin bodies with subatomic wave-function resolution"
Phys. Rev. B 92, 085301 – Published 4 August 2015;doi:10.1103/PhysRevB.92.0853012015quadchart 1quadchart 2Not Cited Yet
"The evaluation of non-topological components in Berry phase and momentum relaxation time in a gapped 3D topological insulator"
J. Phys.: Condens. Matter 27 (2015) 335505;doi:10.1088/0953-8984/27/33/3355052015Not Cited Yet
"Strain and electric field control of hyperfine interactions for donor spin qubits in silicon"
PHYSICAL REVIEW B 91, 245209 (2015), Published 25 June 2015;doi:10.1103/PhysRevB.91.2452092015
"Donor hyperfine Stark shift and the role of central-cell corrections in tight-binding theory"
Journal of Physics: Condensed Matter, 27 (2015) 154207 (7pp);doi:10.1088/0953-8984/27/15/1542072015
"Scaling Theory of Electrically Doped 2D Transistors"
IEEE Electron Device Letters, vol. 36, Issue: 7, Page(s): 726-728, July 2015;doi:10.1109/LED.2015.24363562015
"Interface-induced heavy-hole/light-hole splitting of acceptors in silicon"
Appl. Phys. Lett. 106, 203110 (2015);doi:10.1063/1.49216402015
"Optimal Ge/SiGe nanofin geometries for hole mobility enhancement: Technology limit from atomic simulations"
J. Appl. Phys. 117, 174312 (2015);doi:10.1063/1.49190912015Not Cited Yet
"Polarization-Engineered III-Nitride Heterojunction Tunnel Field-Effect Transistors"
IEEE Journal of Exploratory Solid-State Computational Devices and Circuits, Volume:1, Pages: 28 - 34, Dec. 2015;doi:10.1109/JXCDC.2015.24264332015
"Tunnel field effect transistors in two dimensional transition metal dichalcogenides"
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, vol. 1, Page(s):12-18 , 14 April 2015 ;doi:10.1109/JXCDC.2015.24230962015Not Cited Yet
"Electrically controlling single-spin qubits in a continuous microwave field"
Science Advances 10 Apr 2015: Vol. 1 no. 3 e1500022;doi:10.1126/sciadv.15000222015
"Tunneling and Short Channel Effects in Ultrascaled InGaAs Double Gate MOSFETs"
IEEE Transactions on Electron Devices, Volume:62, Issue: 2, Page(s): 525 - 531, Feb. 2015;doi:10.1109/TED.2014.23833922015
"The influence of proximity induced ferromagnetism, superconductivity and Fermi-velocity on evolution of Berry phase in Bi2Se3 topological insulator"
Semicond. Sci. Technol. Volume:30, 045004;doi:10.1088/0268-1242/30/4/0450042015
"Design Guidelines for Sub-12 nm Nanowire MOSFETs"
IEEE Transactions on Nanotechnology, vol. 14, Issue: 2, Page(s): 210 - 213, March 2015;doi: 10.1109/TNANO.2015.23954412015
"Proximity induced ferromagnetism, superconductivity, and finite-size effects on the surface states of topological insulator nanostructures"
J. Appl. Phys. 117, 044304 (2015);doi:10.1063/1.49068422015
"Limits to Metallic Conduction in Atomic-Scale Quasi-One-Dimensional Silicon Wires"
Phys. Rev. Lett. 113, 246802 – Published 10 December 2014;doi:10.1103/PhysRevLett.113.2468022014
"Design and Simulation of Two-dimensional Superlattice Steep Transistors"
IEEE ELECTRON DEVICE LETTERS., vol. 35, Issue: 12, Page(s): 1212 - 1214, Dec. 2014;doi:10.1109/LED.2014.23645932014
"Anisotropic strain in SmSe and SmTe: Implications for electronic transport"
Phys. Rev. B 90, 245124, Published 15 December 2014;doi:10.1103/PhysRevB.90.2451242014
"Non-equilibrium Green's functions method: Non-trivial and disordered leads"
Appl. Phys. Lett. 105, 213502 (2014);doi:10.1063/1.49025042014paperNot Cited Yet
"Coherent Control of a Single Silicon-29 Nuclear Spin Qubit"
Phys. Rev. Lett. 113, 246801, Published 9 December 2014;doi:10.1103/PhysRevLett.113.2468012014
"A Tight-Binding Study of Single-Atom Transistors"
Small, Volume 11, Issue 3 January 21, 2015 Pages 374–381;doi: 10.1002/smll.2014007242014Not Cited Yet
"Spin-lattice relaxation times of single donors and donor clusters in silicon"
Phys. Rev. Lett. 113, 246406, Published 11 December 2014;doi:10.1103/PhysRevLett.113.2464062014
"Transistor roadmap projection using predictive full-band atomistic modeling"
Appl. Phys. Lett. 105, 083508 , published online 28 August 2014;doi:10.1063/1.48942172014
"Brillouin zone unfolding method for effective phonon spectra"
Physical Review B 90, 205214 (2014);doi:10.1103/PhysRevB.90.2052142014
"nanoHUB.org: Experiences and Challenges in Software Sustainability for a Large Scientific Community"
Published on 9 July 2014, Journal of Open Research Software, Volume: 2, Issue: 1: e19, pp. 1-5;doi: 10.5334/jors.bd2014
"Computational study of heterojunction graphene nanoribbon tunneling transistors with p-d orbital tight-binding method"
Appl. Phys. Lett. 104, 243113 (2014);doi: 10.1063/1.48841992014
"Effect of Diameter Variation on Electrical Characteristics of Schottky Barrier Indium Arsenide Nanowire Field Effect Transistors"
ACS Nano, Publication Date (Web): 21 May 2014;doi: 10.1021/nn50175672014
"Spin blockade and exchange in Coulomb-confined silicon double quantum dots"
Nature Nanotechnology 9, 430–435 (2014), Published online 13 April 2014;doi:10.1038/nnano.2014.632014
"An environment-dependent semi-empirical tight binding model suitable for electron transport in bulk metals, metal alloys, metallic interfaces, and metallic nanostructures. I. Model and validation"
JOURNAL OF APPLIED PHYSICS 115, 123703 (2014), published online 25 March 2014;doi: 10.1063/1.48689772014
"Spatially resolving valley quantum interference of a donor in silicon"
Nature Materials 13, 605–610 (2014), Published online 06 April 2014;doi:10.1038/nmat39412014
"An Environment-dependent Semi-Empirical Tight Binding Model Suitable for Electron Transport in Bulk Metals, Metal Alloys, Metallic Interfaces and Metallic Nanostructures II - Effect of Confinement and Homogeneous Strain on Cu Conductance"
J. Appl. Phys. 115, 123703 (2014);doi: 10.1063/1.48689772014Not Cited Yet
"Design, fabrication, and analysis of p-channel arsenide/antimonide hetero-junction tunnel transistors"
Published online 23 January 2014, J. Appl. Phys. 115, 044502 (2014);doi: 10.1063/1.48620422013
"A Field Experiment on Using Messaging and Virtual Rewards to Increase User Participation on NanoHUB.org"
(May 13, 2013). Available at SSRN: https://ssrn.com/abstract=2344049 or http://dx.doi.org/10.2139/ssrn.23440492013paperNot Cited Yet
"nanoHUB.org: cloud-based services for nanoscale modeling, simulation, and education"
Nanotechnology Reviews. Volume 2, Issue 1, Pages 107–117, ISSN (Online) 2191-9097, ISSN (Print) 2191-9089, January 2013;doi: 10.1515/ntrev-2012-00432013
"Tool-Based Curricula and Visual Learning"
ELECTRONICS, VOL. 17, NO. 2, DECEMBER 20132013paperNot Cited Yet
"Learning and research in the cloud"
Published online 07 November 2013, Nature Nanotechnology 8, 786–789 (2013);doi:10.1038/nnano.2013.2312013
"Efficient and realistic device modeling from atomic detail to the nanoscale"
Journal of Computational Electronics December 2013, Volume 12, Issue 4, pp 592-600;doi:10.1007/s10825-013-0509-02013
"Giant Quasiparticle Bandgap Modulation in Graphene Nanoribbons Supported on Weakly Interacting Surfaces"
Appl. Phys. Lett. 103, 133107 (2013);doi: 10.1063/1.48224272013
"Atomistic modeling of metallic nanowires in silicon"
Nanoscale, 2013,5, 8666-8674, Received 10 Apr 2013, Accepted 02 Jul 2013, First published online 11 Jul 2013;doi:10.1039/C3NR01796F2013
"Spin-valley lifetimes in a silicon quantum dot with tunable valley splitting."
Received 11 January, Accepted 27 May, Published 27 June 2013 in Nature Communications 4, Article number: 2069;doi:10.1038/ncomms30692013
"Probing scattering mechanisms with symmetric quantum cascade lasers"
Accepted February 14, Published: March 14, 2013 in Optics Express, Vol. 21, Issue 6, pp. 7209-7215;doi:10.1364/OE.21.0072092013
"Design principles for HgTe based topological insulator devices"
Published online 22 July, J. Appl. Phys. 114, 043702 (2013);doi: 10.1063/1.48138772013
"Investigation of ripple-limited low-field mobility in large-scale graphene nanoribbons"
Appl. Phys. Lett. Volume 102, Issue 25 (2013), Published online 26 June 2013;doi:10.1063/1.48117612013
"Optical TCAD on the Net: A tight-binding study of inter-band light transitions in self-assembled InAs/GaAs quantum dot photodetectors"
Mathematical and Computer Modelling Volume 58, Issues 1–2, July 2013, Pages 288–299, Financial IT & Security and 2010 International Symposium on Computational Electronics;doi:10.1016/j.mcm.2012.11.0242013
"Atomistic simulation of phonon and alloy limited hole mobility in Si1-xGex nanowires"
Phys. Status Solidi RRL 7, No. 10, 903–906 (2013) 2013
"Electron transport in nano-scaled piezoelectronic devices"
Appl. Phys. Lett. 102, 193501 (2013);doi:10.1063/1.48046012013
"Engineering Nanowire n-MOSFETs at Lg < 8nm"
IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 60, Issue: 7, Page(s): 2171 - 2177, July 2013;doi: 10.1109/TED.2013.22638062013arXivPurdue e-pubsNot Cited Yet
"Simulation Study of Thin-Body Ballistic n-MOSFET Involving Transport in Mixed Γ-L valleys"
IEEE Electron Device Letters, vol.34, Issue: 9, Page(s): 1196 - 1198, Sept. 2013;doi: 10.1109/LED.2013.22730722013Pre-printPurdue e-pubsNot Cited Yet
"Non-invasive spatial metrology of single-atom devices"
Nano Lett.,Published April 9, 2013, 13 (5), pp 1903–1909 ;doi:10.1021/nl303863s2013PaperPurdue e-pubsNot Cited Yet
"Utilizing the Unique Properties of Nanowire MOSFETs for RF Applications"
Nano Lett., March 6, 2013 (Communication);doi:10.1021/nl30470782013
"Silicon Quantum Electronics"
Published 10 July 2013 in Reviews of Modern Physics, Volume 85, Issue 3,961–1019;doi: 10.1103/RevModPhys.85.9612013
"Empirical tight binding parameters for GaAs and MgO with explicit basis through DFT mapping"
Journal of Computational Electronics, January 2013;doi:10.1007/s10825-013-0436-02013
"Observation of 1D Behavior in Si Nanowires: Towards High-Performance TFETs"
Nano Lett., 2012, 12 (11), pp 5571–5575;doi:10.1021/nl30256642012PaperNot Cited Yet
"Indirectly pumped 3.7 THz InGaAs/InAlAs quantum-cascade lasers grown by metal-organic vapor-phase epitaxy"
accepted in Optics Express, 2012, Published August 27, 2012, Vol. 20, Issue 18, pp. 20647-20658 (2012);doi:10.1364/OE.20.0206472012
"Material Selection for Minimizing Direct Tunneling in Nanowire Transistors"
IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 59, Issue: 8, Page(s): 2064 - 2069, Aug. 2012;doi:10.1109/TED.2012.22006882012
"Performance Comparisons of III-V and strained-Si in Planar FETs and Non-planar FinFETs at Ultra-short Gate Length (12nm)"
IEEE Transactions on Electron Devices, vol. 59, Issue: 8, Page(s): 2107 - 2114, Aug. 2012;doi:10.1109/TED.2012.21984812012
"Feasibility, Accuracy, and Performance of Contact Block Reduction method for multi-band simulations of ballistic quantum transport"
Journal of Applied Physics 111, 063705 (2012), Published 21 March 2012;doi: 10.1063/1.36947402012pre-printpreprint on cond-mat/1112.3124Abstract on cond-mat/1112.3124PaperCited by 8
"A two-dimensional domain decomposition technique for the simulation of quantum-scale devices"
Journal of Computational Physics Volume 231, Issue 4, 20 February 2012, Pages 1293–1313;doi:10.1016/j.jcp.2011.10.0062012
"The polarization response in InAs quantum dots: theoretical correlation between composition and electronic properties"
IOP Nanotechnology, Volume 23, Number 16, Published 2 April 2012;doi:10.1088/0957-4484/23/16/1652022012Paperpreprint on cond-mat/1203.3855abstract on cond-mat/1203.3855Cited by 13
"Effects of Interface Disorder on Valley Splitting in SiGe/Si/SiGe Quantum Wells"
Applied Physics Letters Vol100 issue10, Mar 6, 2012;doi: 10.1063/1.36921742012Free PDF From Purdue Librarypreprint on cond-mat/1110.4097v2Abstract on cond-mat/1110.4097v2Cited by 7 / 15 Downloads
"Design of three-well indirect pumping terahertz quantum cascade lasers for high optical gain based on nonequilibrium Green's function analysis"
Appl. Phys. Lett. 100, 122110 (2012);doi:10.1063/1.36976742012
"A single-atom transistor"
Nature Nanotechnology 7, 242–246 (2012);doi: 10.1038/NNANO.2012.212012
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Applied Physics Letters 100, 063504, Published 7 February 2012;doi:10.1063/1.36825062012
"Ohm's Law Survives to the Atomic Scale"
Science 335, 64 (2012);doi: 10.1126/science.12143192012
"Calculation of Phonon Spectrum and Thermal Properties in Suspended <100> InXGa1-XAs Nanowires"
Journal of Computational Electronics March 2012, Volume 11, Issue 1, pp 22-28;doi:10.1007/s10825-012-0389-82012PaperNot Cited Yet
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Journal of Applied Physics , V110 , Issue: 4 , 043713, Published: AUG 15 2011;doi:10.1063/1.36246122011
"Effects of Interface Roughness Scattering on Radio Frequency Performance of Silicon Nanowire Transistors"
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"An efficient algorithm to calculate intrinsic thermoelectric parameters based on Landauer approach"
Journal of Computational Electronics, March 2012, Volume 11, Issue 1, pp 56-66;doi:10.1007/s10825-011-0379-22011paperFree PDF From Purdue LibraryCited by 7 / 22 Downloads
"Electronic structure of realistically extended, atomistically resolved disordered Si:P δ-doped layers"
Phys. Rev. B 84, 205309 (2011) – Published November 14, 2011;doi:10.1103/PhysRevB.84.2053092011paperFree PDF From Purdue LibraryCited by 30 / 8 Downloads
"Does the low hole transport mass in <110> and <111> Si nanowires lead to mobility enhancements at high field and stress: a self-consistent tight-binding study"
Journal of Applied Physics Vol.111, Issue 12 published online 26 June 2012;doi: 10.1063/1.47298062011
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Physical Review B, Vol. 84, pg. 155204, Published 17 October 2011;doi :10.1103/PhysRevB.84.1552042011preprintAbstractFree PDF From Purdue LibraryPaperCited by 8 / 17 Downloads
"Influence of cross-section geometry and wire orientation on the phonon shifts in ultra-scaled Si nanowires"
J. Appl. Phys. 110, 094308 (2011);doi:10.1063/1.36566872011preprint on cond-mat/1106.1935Abstract on cond-mat/1106.1935AbstractFree PDF From Purdue LibraryPaperCited by 6 / 10 Downloads
"Shape and orientation effects on the ballistic phonon thermal properties of ultra-scaled Si nanowires"
Journal of Applied Physics 110, 114309 (2011), selected for the December 19, 2011 issue of Virtual Journal of Nanoscale Science & Technology, Published 6 December 2011;doi:10.1063/1.36621772011preprint on cond-mat/1108.2551Abstract on cond-mat/1108.2551Free PDF From Purdue LibraryPaperCited by 6 / 7 Downloads
"NEMO5: A Parallel Multiscale Nanoelectronics Modeling Tool"
IEEE Transactions on Nanotechnology, Vol. 10, Issue: 6, Page(s): 1464 - 1474, Nov. 2011;doi:10.1109/TNANO.2011.21661642011AbstractFree PDF From Purdue LibraryCited by 52 / 12 Downloads
"Experimental and atomistic theoretical study of degree of polarization from multilayer InAs/GaAs quantum dot stacks"
Physical Review B 84, 115321, published September 23, 2011;doi: 10.1103/PhysRevB.84.1153212011preprint on cond-mat/1106.0517Abstract on cond-mat/1106.0517paperabstractFree PDF From Purdue LibraryCited by 30 / 15 Downloads
"Role of surface orientation on ALD Al2O3/GaAs interface structure and Fermi level pinning: a DFT study"
Applied Physics Letters 99, 093508, Published 2 September 2011;doi:10.1063/1.36248972011PaperNot Cited Yet
"Lifetime enhanced transport in silicon due to spin and valley blockade"
Phys. Rev. Lett. 107, 136602 – Published 19 September 2011;doi:10.1103/PhysRevLett.107.1366022011pre-printFree PDF From Purdue LibraryCited by 20 / 5 Downloads
"Electric field reduced charging energies and two-electron bound excited states of single donors in silicon"
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"Strain effects on the phonon thermal properties of ultra-scaled Si nanowires"
APPLIED PHYSICS LETTERS 99, 083115 (2011);doi:10.1063/1.36302282011paperFree PDF From Purdue LibraryCited by 6 / 8 Downloads
"Interface trap density metrology from sub-threshold transport in highly scaled undoped Si n-FinFETs"
Journal of Applied Physics. 110, 121301 (2011), 22 December 2011;doi:10.1063/1.36606972011preprint on cond-mat/1102.0140Abstract on cond-mat/1102.0140Free PDF From Purdue LibraryAbstractCited by 4 / 56 Downloads
"Quantitative Excited State Spectroscopy of a Single InGaAs Quantum Dot Molecule through Multi-million Atom Electronic Structure Calculations"
Nanotechnology 22 (2011) 315709 (14pp);doi:10.1088/0957-4484/22/31/3157092011paperAbstract on cond-mat/1008.3127v2preprint on cond-mat/1008.3127v2Free PDF From Purdue LibraryCited by 18 / 26 Downloads
"Subband engineering for p-type silicon ultra-thin layers for increased carrier velocities: An atomistic analysis"
Journal of Applied Physics, Vol 109, ppg: 053721 – 053726, Published 15 March 2011;doi: 10.1063/1.35564352011Free PDF From Purdue LibraryCited by 9 / 14 Downloads
"Accurate Six-Band Nearest-Neighbor Tight-Binding Model for the π-Bands of Bulk Graphene and Graphene Nanoribbons"
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"Interface Trap Density Metrology of state-of-the-art undoped Si n-FinFETs"
Electron Device Letters. 32,4 (2011);doi : 10.1109/LED.2011.21061502011preprint on cond-mat/1011.2582Abstract on cond-mat/1011.2582Free PDF From Purdue LibraryCited by 7 / 24 Downloads
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Applied Physics Letters 98, 212105 (2011);doi:10.1063/1.35925772011preprint on cond-mat/1103.1452Abstract on cond-mat/1103.1452Free PDF From Purdue LibraryCited by 8
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"Multiscale Metrology and Optimization of Ultra-Scaled InAs Quantum Well FETs"
IEEE Transactions on Electron Devices, Volume:58 , Issue: 7, Page(s): 1963 - 1971, July 2011;doi:10.1109/TED.2011.21449862011preprint on cond-mat/1012.05366Abstract on cond-mat/1012.05366Free PDF From Purdue LibraryCited by 11 / 69 Downloads
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"Stark tuning of the charge states of a two-donor molecule in silicon"
Nanotechnology 22 225202;doi:10.1088/0957-4484/22/22/2252022011preprint on cond-mat/0907.3929Abstract on cond-mat/0907.3929Free PDF From Purdue LibraryCited by 8 / 2 Downloads
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Journal of Applied Physics 83 19 pags 104510, 26 May 2011 ;doi:10.1063/1.35871672011preprint on cond-mat/1012.3489v1Abstract on cond-mat/1012.3489v1Free PDF From Purdue LibraryCited by 21 / 63 Downloads
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Applied Physics Letters 98 8 pags 083106, published Feb. 22, 2011. arXiv:1012.1054, selected for the March 7, 2011 issue of Virtual Journal of Nanoscale Science & Technology;doi:10.1063/1.35566482011preprint on cond-mat/1012.1054Abstract on cond-mat/1012.1054Free PDF From Purdue LibraryCited by 3 / 46 Downloads
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IEEE Electron Device Letters, Vol. 32, Issue: 3, pags 255-257, March 2011;doi:10.1109/LED.2010.20991012011preprint on cond-mat/1012.1579Abstact at arXiv:/1012.1579Free PDF From Purdue LibraryCited by 13 / 32 Downloads
"Full Three-Dimensional Quantum Transport Simulation of Atomistic Interface Roughness in Silicon Nanowire FETs"
EEE Transactions on Electron Devices (May 2011) Vol: 58 Issue:5 , Page : 1371 - 1380;doi: 10.1109/TED.2011.21182132011Free PDF From Purdue LibraryCited by 33 / 15 Downloads
"Spin-orbit Splittings in Si/SiGe Quantum Wells: From Ideal Si Membranes to Realistic Heterostructures"
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Appl. Phys. Lett. 97, 261106 (2010);doi:10.1063/1.35241972010Free PDF From Purdue LibraryPaperCited by 23 / 51 Downloads
"Adaptive quadrature for sharply spiked integrands"
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"Modified valence force field approach for phonon dispersion: from zinc-blende bulk to nanowires"
Journal of Computational Electronics Volume 9, Numbers 3-4, 160-172, Abstract on arXiv:1009.6188 ;doi: 10.1007/s10825-010-0332-92010Preprintpreprint on cond-mat/1009.6188Abstract on cond-mat/1009.6188Free PDF From Purdue LibraryCited by 40 / 10 Downloads
"Coherent electron transport by adiabatic passage in an imperfect donor chain"
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Computing in Science and Engineering, Vol. 12, pg: 12-17 (2010);doi:10.1109/MCSE.2010.382010AbstractFree PDF From Purdue LibraryCited by 22 / 164 Downloads
"Strain-induced, off-diagonal, same-atom parameters in empirical tight-binding theory suitable for [110] uniaxial strain applied to a silicon parameterization"
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"Leakage Reduction Design Concepts for Low Power Vertical Tunneling Field-Effect Transistors"
IEEE Electronic Device Letters, Vol. 31, Issue: 6, Page(s):621 - 623, June 2010 ;doi:10.1109/LED.2010.20460112010Free PDF From Purdue LibraryCited by 28 / 6 Downloads
"Numerical Strategies towards Peta-Scale Simulations of Nanoelectronics Devices"
Parallel Computing (PARCO), Vol. 36, pg. 117-128 (2010);doi:10.1016/j.parco.2010.01.0032010AbstractFree PDF From Purdue LibraryCited by 8 / 127 Downloads
"Performance Prediction of Ultra-scaled SiGe/Si Core/Shell Electron and Hole Nanowire MOSFETs"
IEEE Electron Device Letters, Vol. 31, Issue: 4, Page(s): 278-280, April 2010;doi:10.1109/LED.2010.20405772010AbstractFree PDF From Purdue LibraryNot Cited Yet / 5 Downloads
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IEEE Computing in Science and Engineering (CISE), Vol.12, Issue: 2, Pages: 28-35, March-April 2010;doi:10.1109/MCSE.2010.322010Free PDF From Purdue LibraryNot Cited Yet / 7 Downloads
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IEEE Electron Device Letters, Vol. 31, Issue: 2, Page(s): 150 - 152, Feb. 2010;doi:10.1109/LED.2009.20361342009AbstractFree PDF From Purdue LibraryCited by 11 / 105 Downloads
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Journal of Computational Electronics, Vol. 8, pp. 124–131 (2009);doi:10.1007/s10825-009-0273-32009AbstractFree PDF From Purdue LibraryCited by 5 / 95 Downloads
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IEEE Electron Device Letters, Vol. 30, Issue: 5, Page(s): 526-528, May 2009;doi:10.1109/LED.2009.20155882009AbstractFree PDF from Purdue LibraryCited by 8 / 55 Downloads
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Physica E, Vol. 41, pp. 490-494 (2009);doi:10.1016/j.physe.2008.09.0222009AbstractFree PDF From Purdue LibraryCited by 10 / 79 Downloads
"Structures and energetics of Silicon nanotubes from molecular dynamics and density functional theory"
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IEEE Nanotechnology Magazine, Vol. 2, Issue: 1, Page(s): 28-31, March 2008;doi:10.1109/MNANO.2008.9209592008AbstractFree PDF From Purdue LibraryCited by 1 / 81 Downloads
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IEEE Transactions on Nanotechnology, Vol. 7, Issue: 6, Page(s): 710-719, Nov. 2008, - Special issue on nanowires;doi:10.1109/TNANO.2008.20062722008AbstractFree PDF From Purdue Librarypreprint on cond-mat/0809.3492Cited by 42 / 321 Downloads
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IEEE Computer, Vol. 41, Issue: 11, Page(s): 32-41, June 2008;doi : 10.1109/MC.2008.4702008AbstractFree PDF From Purdue LibraryCited by 134 / 221 Downloads
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Microelectronics Journal Vol. 39 pg. 318-326 (2008);doi : 10.1016/j.mejo.2007.07.0162008AbstactFree PDF from Purdue LibraryCited by 4 / 172 Downloads
"Multimillion Atom Simulations with NEMO 3-D"
Springer Encyclopedia for Complexity, pp 5745-5783, 2008, Published 2009;doi:10.1007/978-0-387-30440-3_3432008AbstractFree PDF From Purdue LibraryAbstact at arXiv:0901.1890v1Full Paper at arXiv:0901.1890v1Cited by 10 / 130 Downloads
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Nature Physics, Vol. 4, pg. 656 (2008) ;doi : 10.1038/nphys9942008AbstactFree PDF from Purdue LibraryCited by 64 / 286 Downloads
"Bandstructure Effects in Silicon Nanowire Electron Transport"
IEEE Transaction on Electron Devices, Vol. 55, Issue: 6, Page(s): 1286 - 1297, June 2008, pg. 1286 - 1297 ;doi: 10.1109/TED.2008.9202332008AbstractFree PDF From Purdue LibraryCited by 132 / 166 Downloads
"Band-Structure Effects on the Performance of III-V Ultrathin-body SOI MOSFETs"
IEEE Transaction on Electron Devices, Vol. 55, Issue 5, Page(s): 1116 - 22, May 2008;doi : 10.1109/TED.2008.9192902008AbstactFree PDF from Purdue LibraryCited by 16 / 309 Downloads
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"nanoHUB.org: Advancing Education and Research in Nanotechnology"
IEEE Computers in Engineering and Science (CISE), Vol. 10, Issue: 5, Page(s): 17 - 23, Sept.-Oct. 2008;doi:10.1109/MCSE.2008.1202008AbstactFree PDF from Purdue LibraryCited by 141 / 403 Downloads
"Multiband transmission calculations for nanowires using an optimized renormalization method"
Phys Rev B, Vol. 77, 165318 (2008);doi : 10.1103/PhysRevB.77.1653182008AbstactFree PDF from Purdue LibraryCited by 17 / 191 Downloads
"Eigenvalue Solvers for Atomistic Simulations of Electronic Structures with NEMO-3D"
Journal of Computational Electronics, 2008, Vol. 7, pg. 297-300 (2008);doi : 10.1007/s10825-008-0223-52008AbstactFree PDF from Purdue LibraryCited by 6 / 282 Downloads
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"A Tight-binding Study of the Ballistic Injection Velocity for Ultrathin-body SOI MOSFETs"
IEEE Transaction on Electron Devices, Vol. 55, Issue: 3, Page(s): 866 - 871, March 2008;doi : 10.1109/TED.2007.9150562008AbstactFree PDF from Purdue LibraryCited by 34 / 356 Downloads
"Valley Splitting in Finite Barrier Quantum Wells"
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"High precision quantum control of single donor spins in Si"
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"Quantum Transport with Spin Dephasing: A Nonequilibrium Green's function Approach"
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IEEE Transactions on Electron Devices, Vol. 54, Issue 9, Page(s):2090 - 2099, Sept. 2007, (INVITED) Special Issue on Nanoelectronic Device Modeling;doi : 10.1109/TED.2007.9048772007AbstractFree PDF from Purdue LibraryCited by 83 / 236 Downloads
"Atomistic Simulation of Realistically Sized Nanodevices Using NEMO 3-D: Part I - Models and Benchmarks"
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Applied Physics Letters, Vol 90, 182119 (2007);doi : 10.1063/1.27362952007AbstractFree PDF from Purdue LibraryCited by 20 / 61 Downloads
"Coupled mode space approach for the simulation of realistic Carbon Nanotube Field Effect Transistors"
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"Performance Analysis of a Ge/Si Core/Shell Nanowire Field Effect Transistor"
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"Computational aspects of the three-dimensional feature-scale simulation of silicon-nanowire field-effect sensors for DNA detection"
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"Transport Calculation of Semiconductor Nanowires Coupled to Quantum Well Reservoirs"
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"The electronic Structure and Transmission Characteristics of AlGaAs Nanowires"
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IEEE Transactions on Electron Devices, Vol. 52, Issue: 6, Page(s): 1097-1103, June 2005;doi : 10.1109/TED.2005.8480772005AbstractFree PDF from Purdue LibraryCited by 170 / 638 Downloads
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