Conference Proceedings Publications
These peer-reviewed proceedings articles are typically extended abstracts made available to conference participants. Some of the articles are also publicly available in conference archives such as IEEE IEDM, IEEE DRC, IEEE SISPAD, IEEE Nano, IEEE AP-S, and Inst. Phys. Conf. Ser. The conference participation is also shown in the list of conferences.
- Nanoelectronics, Genetic Algorithms, and Cluster computing
- NEMO Related Work at Raytheon / TI / UTD
- Quantum Dots, RTD's and 2DEG's at Purdue
"Open Science via HUBzero: Exploring Five Science Gateways Supporting and Growing their Open Science Communities"
Proc. of HICSS-55 (55th Hawaii International Conference on System Sciences), Open Science Practices in Information Systems Research, January 20222022linkNot Cited Yet
"Using nanoHUB.org in Research and Education – a Hands-on Tutorial"
IEEE NMDC Conference, Dec. 12-15, 2021. 2021Not Cited Yet
"HUBzero's variations of sustainability: From simulation/modeling tools to communities"
CEUR Workshop Proceedings, 2021, 29752021Not Cited Yet
"NanoHUB user behavior: Moving from retrospective statistics to actionable behavior analysis"
CEUR Workshop Proceedingst, 2021, 29752021Not Cited Yet
"The Ultimate DataFlow for Ultimate SuperComputers-on-a-Chip, for Scientific Computing, Geo Physics, Complex Mathematics, and Information Processing"
10th Mediterranean Conference on Embedded Computing, MECO, 2021, 9459725, DOI 10.1109/MECO52532.2021.94597252021Not Cited Yet
"Resistivity Impact from Modulated Line-Edge-Roughness with Self-aligned Double Patterning"
proceedings of 2020 IEEE International Interconnect Technology Conference (IITC), DOI: 10.1109/IITC47697.2020.95156192020Not Cited Yet
"nanoHUB User Behavior: Moving From Retrospective Statistics to Actionable Behavior Analysis"
11th International Workshop on Science Gateways, Ljubljana, Slovenia, June 12-14, 20192019paperNot Cited Yet
"”Instant On” Science Gateways: An Introduction to Caching Simulation Results and a Path Towards Data Exploration"
Gateways 2019, Sept. 23–25, 2019, San Diego, California2019Not Cited Yet
"Using nanoHUB.org in Research and Education—A Hands-on Tutorial"
Proceedings of IWCN 2019 - International Workshop on Computational Nanotechnology, May 20-24, 2019 Evanston, IL, USA2019Not Cited Yet
"Visualizing User Interactions with Simulation Tool"
Proceedings of the 13th Gateway Computing Environments Conference, September 25-27, 2018, Austin, TX2018paperNot Cited Yet
"Clustering Download Events to Identify Classrooms"
Proceedings of the 13th Gateway Computing Environments Conference, September 25-27, 2018, Austin, TX2018paperNot Cited Yet
"Using Automatic Detection and Characterization to Measure Educational Impact of nanoHUB"
Proceedings of the 13th Gateway Computing Environments Conference, September 25-27, 2018, Austin, TX2018paperNot Cited Yet
"Design Guidelines and Limitations of Multilayer Two-dimensional Vertical Tunneling FETs for Ultra-Low Power Logic Applications"
Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices, September 24-26, 2018, Austin, TX2018Not Cited Yet
"Electron-only explicit screening quantum transport model for semiconductor nanodevices"
Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices, September 24-26, 2018, Austin, TX2018Not Cited Yet
"Surface and grain boundary effects on copper interconnects thin films modeling with an atomistic basis"
Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices, September 24-26, 2018, Austin, TX2018Not Cited Yet
"NEMO5: Multi-Scale, Multi-Physics, Atomistic Modeling of Non-Equilibrium Processes in Nanometer-Scaled Compound Materials For Active Devices and Global Impact on nanoHUB.org"
Collaborative Conference on Materials Research (CCMR) 2018, 25 - 29 June 2018, Incheon/Seoul, South Korea2018PaperNot Cited Yet
"Assessment of Si/SiGe PMOS Schottky contacts through atomistic tight binding simulations: Can we achieve the 10−9Ω·cm? target?"
Proceedings of the 2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO), Pages 83-842017ieeeexploreNot Cited Yet
"Sb- and Al-free ultra-high-current tunnel FET designs"
Proceedings of the 2017 Fifth Berkeley Symposium on Energy Efficient Electronic Systems & Steep Transistors Workshop (E3S), Pages 1-32017ieeeexploreNot Cited Yet
"III-N heterostructure devices for low-power logic"
Proceedings of the Semiconductor Technology International Conference (CSTIC), 2017 China, Pages 1-3;doi:10.1109/CSTIC.2017.79197432017ieexploreNot Cited Yet
"A high-current InP-channel triple heterojunction tunnel transistor design "
Proceedings of the 75th Device Research Conference (DRC), University of Notre Dame (Indiana, USA) from June 25-28, 2017;doi:10.1109/DRC.2017.79994372017ieexploreNot Cited Yet
"NEMO5: realistic and efficient NEGF simulations of GaN light-emitting diodes"
Proc. SPIE 10098, Physics and Simulation of Optoelectronic Devices XXV, 1009813 (February 22, 2017);doi:10.1117/12.22562362017Not Cited Yet
"NEMO5: Predicting MoS2 Heterojunctions"
2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD);doi: 10.1109/SISPAD.2016.76051872016ieeeexploreNot Cited Yet
"Grain boundary resistance in nanoscale copper interconnections"
Simulation of Semiconductor Processes and Devices (SISPAD), 20162016ieeeexploreNot Cited Yet
"Novel III-N heterostructure devices for low-power logic and more"
Nanotechnology (IEEE-NANO), 2016 IEEE 16th International Conference on(pp. 767-769). IEEE;doi:10.1109/NANO.2016.77513362016paperNot Cited Yet
"A Tunnel FET Design for High-Current, 120 mV Operation"
2016 IEEE International Electron Devices Meeting, December 3-7, 2016, San Francisco, CA;doi:10.1109/IEDM.2016.78385112016ieeexploreNot Cited Yet
"Exploring Channel Doping Designs for High-Performance Tunneling FETs"
Device Research Conference (DRC), June, 2016, Newark, Delaware, USA;doi:10.1109/DRC.2016.75484562016paperNot Cited Yet
"Extremely high simulated ballistic currents in triple-heterojunction tunnel transistors"
Device Research Conference (DRC), June, 2016, Newark, Delaware, USA;doi:10.1109/DRC.2016.75484242016paperNot Cited Yet
"High-Current InP-Based Triple Heterojunction Tunnel Transistors"
28th International Conference on Indium Phosphide and Related Materials (IPRM), June, 2016, Toyama, Japan;doi:10.1109/ICIPRM.2016.75285922016paperNot Cited Yet
"Transport in vertically stacked hetero-structures from 2D materials"
33rd International Conference on the Physics of Semiconductors, Beijing, China on July 31- August 5, 2016 2016AbstractNot Cited Yet
"2D tunnel transistors for ultra-low power applications: Promises and challenges"
2015 Fourth Berkeley Symposium on Energy Efficient Electronic Systems (E3S), 1-2 Oct. 2015, Berkeley, CA, Page(s): 1 - 3;doi:10.1109/E3S.2015.73367922015paperNot Cited Yet
"Interactive Analytic Systems for Understanding the Scholarly Impact of Large-Scale E-science Cyberenvironments"
2015 IEEE 11th International Conference on e-Science (e-Science), Aug. 31 2015-Sept. 4 2015, Munich, Page(s): 288 - 291;doi:10.1109/eScience.2015.342015paperNot Cited Yet
"Electrically doped WTe2 tunnel transistors"
2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 9-11 Sept. 2015, Washington, DC, Page(s): 270 - 272;doi:10.1109/SISPAD.2015.72923112015Not Cited Yet
"Quantum dot lab: an online platform for quantum dot simulations"
International Workshop on Computational Electronics (IWCE), 2015, Page(s): 1 - 3;doi:10.1109/IWCE.2015.73019822015paperNot Cited Yet
"Nanohub as a Platform for Implementing ICME Simulations in Research and Education"
Proceedings of the 3rd World Congress on Integrated Computational Materials Engineering (ICME 2015), 15 MAY 2015;doi: 10.1002/9781119139508.ch322015paperNot Cited Yet
"Finite difference schemes for k⋅p models: A comparative study"
18th International Workshop on Computational Electronics (IWCE), West Lafayette, Indiana, September 2-4, 2015, Page(s): 1 - 2;doi:10.1109/IWCE.2015.73019652015paperNot Cited Yet
"Electrically Doped 2D matertial tunnel transistor"
International Workshop on Computational Electronics (IWCE 2015) September 2, 2015 West Lafayette, Indiana USA, Pages: 1 - 3;doi:10.1109/IWCE.2015.73019662015paperNot Cited Yet
"NEMO5: Why must we treat topological insulator nanowires atomically?"
IWCE, September 2, 2015 West Lafayette, Indiana USA2015paperNot Cited Yet
"Achieving a higher performance in bilayer graphene FET - strain engineering"
the 20th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, 9-11 Sep. 2015, Pages: 177 - 181;doi:10.1109/SISPAD.2015.72922882015paperNot Cited Yet
"Atomistic quantum transport approach to time-resolved device simulations"
in Proceedings of the 20th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, 9-11 Sep. 2015, pp. 8-11;doi:10.1109/SISPAD.2015.72922452015paperNot Cited Yet
"Tunneling: The Major Issue in Ultra-scaled MOSFETs"
IEEE Nano, Rome, Italy, July 26-30, 2015, Pages: 670 - 673;doi:10.1109/NANO.2015.73886942015paperNot Cited Yet
"Record-Performance Thermally-Limited Devices, Prospects for High-On-Current Steep Subthreshold Swing Devices"
2015 Conference on Indium Phosphide and Related Matrerials, June 8-July 2, Santa Barbara, CA2015Not Cited Yet
"Engineering The Optical Transitions of Self-Assembled Quantum Dots"
International Workshop on Computational Electronics (IWCE 2015) September 2, 2015 West Lafayette, Indiana USA, Pages: 1 - 4;doi:10.1109/IWCE.2015.73019402015paperNot Cited Yet
"Mode space tight binding model for ultra-fast simulations of III-V nanowire MOSFETs and heterojunction TFETs"
International Workshop on Computational Electronics (IWCE 2015) September 2, 2015 West Lafayette, Indiana USA, Page(s): 1 - 3;doi:10.1109/IWCE.2015.73019342015paperNot Cited Yet
"Comparison of Ultra-Thin InAs and InGaAs Quantum Wells and Ultra-Thin-Body Surface-Channel MOSFETs"
27th International Conference on Indium Phosphide and Related Materials, June 28-July 2, 2015 University of California Santa Barbara, CA, USA2015Not Cited Yet
"Transistors for VLSI, for Wireless: A View Forwards Through Fog"
73rd Device Research Conference (DRC), Ohio State University,June 21-24, 20152015Not Cited Yet
"More Moore landscape for system readiness-ITRS2. 0 requirements"
32nd IEEE International Conference on Computer Design (ICCD), pp. 147-152, Oct. 2014;doi: 10.1109/ICCD.2014.69746742015paperNot Cited Yet
"Optimization of the anharmonic strain model to capture realistic strain distributions in quantum dots"
14th IEEE International Conference on Nanotechnology, 18-21 Aug. 2014, Page(s): 921 - 924, Toronto, ON;doi: 10.1109/NANO.2014.69681372014paperNot Cited Yet
"Performance degradation due to thicker physical layer of high k oxide in ultra-scaled MOSFETs and mitigation through electrostatics design"
2014 IEEE Silicon Nanoelectronics Workshop (SNW), 8-9 June 2014, Honolulu, HI, Page(s): 1 - 2;doi:10.1109/SNW.2014.73485672014paperNot Cited Yet
"Statistical Modeling of Ultra-Scaled Donor-Based Silicon Phosphorus Devices"
2014 IEEE Silicon Nanoelectronics Workshop, Hilton Hawaiian Village, Honolulu, HI USA June 8-9, 2014, Page(s): 1 - 2;doi:10.1109/SNW.2014.73485892014paperNot Cited Yet
"Designing a large scale quantum computer with atomistic simulations"
2014 IEEE Silicon Nanoelectronics Workshop (SNW), 8-9 June 2014, Honolulu, HI, Page(s): 1 - 2;doi:10.1109/SNW.2014.73485652014paperNot Cited Yet
"Atomistic simulation of steep subthreshold slope Bi-layer MoS2 transistors"
2014 IEEE Silicon Nanoelectronics Workshop (SNW), 8-9 June 2014, Honolulu, HI, Page(s): 1 - 2;doi:10.1109/SNW.2014.73486062014paperNot Cited Yet
"Silicon at the fundamental scaling limit-atomic-scale donor-based quantum electronics"
IEEE Silicon Nanoelectronics Workshop (SNW), Page(s): 1 - 2, 8-9 June 2014;doi:10.1109/SNW.2014.73485502014paperNot Cited Yet
"nanoHUB.org: A Gateway to Undergraduate Simulation-Based Research in Materials Science and Related Fields"
2014 MRS Fall Meeting, Volume: 1762;doi:10.1557/opl.2015.802014paperPurdue e-pubsNot Cited Yet
"Quantum Transport in NEMO5: Algorithm Improvements and High Performance Implementation"
2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan, September 9-11, 2014, Page(s): 361 - 364;doi:10.1109/SISPAD.2014.69316382014paperNot Cited Yet
"Tight Binding analysis of Si/GaAs UTBs with subatomic resolution"
17th International Workshop on Computational Electronics (IWCE), Paris, France, 20142014paperNot Cited Yet
"Atomistic Tight Binding Simulations with Real Space Basis Functions: Optical Properties of Quantum Wells and Dots"
IWCE 2014, June 3-6, Paris, France2014Not Cited Yet
"nanoHUB.org: Experiences and Challenges in Software Sustainability for a Large Scientific Community"
First Workshop on Sustainable Software for Science: Practice and Experiences (WSSSPE1), held in conjunction with SC12, 17 November 2013, Denver, CO.2013arXivNot Cited Yet
"Atomistic Simulation of GaN/InN/GaN Tunnel FETs"
Berkeley Symposium on Energy Efficient Electronic Systems, 20132013Not Cited Yet
"nanoHUB-U: A Science Gateway Ventures into Structured Online Education"
13th IEEE International Conference on Nanotechnology, August 5-8, 2013, Shangri-La Hotel, Beijing, China2013preprintpurdue e-pubsNot Cited Yet
"Thermal transport in topological insulator nanowires"
Techon Sept 10-11, 2013. Austin2013Not Cited Yet
"Topological insulator states in a broken-gap GaN/InN/GaN system heterojunction"
International Conference on Nitride Semiconductors. Aug 25 -30, 2013. Washington D.C2013Not Cited Yet
"Atomistic Simulation on Gate-recessed InAs/GaSb TFETs and Performance Benchmark"
Device Research Conference (DRC),Page(s): 145 - 146, June 2013, Notre Dame, IN, USA;doi: 10.1109/DRC.2013.66338352013
"Quantum Corrected Drift-Diffusion Simulation for Prediction of CMOS Scaling"
Device Research Conference, 20132013Not Cited Yet
"Scaling Effect on Specific Contact Resistivity in Nanoscale Metal-Semiconductor Contacts"
Device Research Conference (DRC), University of Notre Dame, IN, June 23-26, 2013, Page(s): 125 - 126, and International Workshop on Computational Electronics (IWCE), Nara, Japan, June 4-7, 2013;doi: 10.1109/DRC.2013.66338252013
"Nonequilibrium Green’s function method: Algorithm for regular and irregular leads"
16th International Workshop on Computational Electronics, Nara, Japan June 4-7, 20132013Not Cited Yet
"Effect of Fin Tapering in Nanoscale Si FinFETs"
16th International Workshop on Computational Electronics, Nara, Japan June 4-7, 20132013paperNot Cited Yet
"NEMO5, a Parallel, Multiscale, Multiphysics Nanoelectronics Modeling Tool"
IEEE SISPAD 2012, pg: 388-391, International Conference on Simulation of Semiconductor Processes and Devices, Denver, CO, Sept. 20122012
"Atomistic Analalysis of Electrical Performance of Highly Scaled Si1-xGex p-FinFETs"
SISPAD 2012, International Conference on Simulation of Semiconductor Processes and Devices, Denver, CO, Sept. 20122012Not Cited Yet
"Spectroscopy of a deterministic single-donor device in silicon"
Proceedings of SPIE, V8400, Article Number: 840006, May 1, 2012;doi:10.1117/12.9197632012
"Multiband tight-binding model for strained and bilayer graphene from DFT calculations "
Computational Electronics (IWCE), 2012 15th International Workshop on, 22-25 May 2012;doi:10.1109/IWCE.2012.62428262012
"Archimedes, the free Monte Carlo simulator: A GNU package for submicron semiconductor devices on nanoHUB "
IWCE 2012 proceeding, May 2012;doi:10.1109/IWCE.2012.62428612012PaperNot Cited Yet
"The Composite Materials Manufacturing HUB – Crowd Sourcing as the Norm"
The composite exhibition and convention (COMPOSITES 2012), Feb. 21-23, 2012 at Las Vegas, Nevada2012pre-printFree PDF From Purdue LibraryNot Cited Yet
"Single Layer MoS2 Band Structure and Transport"
International Semiconductor Device Research Symposium (ISDRS 2011), Dec 7-11, Univ of Maryland2011Not Cited Yet
"Effects of Interface Roughness Scattering on RF Performance of Nanowire Transistors"
International Semiconductor Device Research Symposium (ISDRS 2011), Dec 7-11, Univ of Maryland;doi:10.1109/ISDRS.2011.61352992011Free PDF From Purdue LibraryNot Cited Yet
"Ballistic hole injection velocity analysis in Ge UTB pMOSFETs: Dependence on body thickness, orientation and strain"
International Semiconductor Device Research Symposium (ISDRS 2011), Dec 7-11, Univ of Maryland;doi:10.1109/ISDRS.2011.61353722011PaperNot Cited Yet
"Atomistic nanoelectronic device simulations with sustained performances up to 1.44 PFlop/s"
Finalist in ACP/IEEE in Gordon Bell Prize Competition (5 finalists) Supercomputing Nov. 2011, IEEE Proceedings, E-ISBN: 978-1-4503-0771-02011Paper from IEEEPaperNot Cited Yet
"Tunability of the critical width of a 2D Topological Insulator"
Presented at MRS Fall Meeting 2011, SYMPOSIUM L, Boston, MA2011AbstractNot Cited Yet
"Network for Computational Nanotechnology - A Strategic Plan for Global Knowledge Transfer in Research and Education"
INVITED paper, IEEE proceedings of IEEE Nanotechnology Materials and Devices Conference (IEEE NMDC 2011), Oct. 18-21, 2011 at The Shilla Jeju, Korea2011paperFree PDF From Purdue LibraryCited by 1 / 9 Downloads
"Contact Modeling and Analysis of InAs HEMT Transistors"
IEEE proceedings of IEEE Nanotechnology Materials and Devices Conference (IEEE NMDC 2011), Oct. 18-21, 2011 at The Shilla Jeju, Korea2011paperCited by 1 / 26 Downloads
"Practical Considerations in Cloud Utilization for the Science Gateway nanoHUB.org"
Utility and Cloud Computing (UCC), 2011 Fourth IEEE International Conference on, Publication Year: 2011 , Page(s): 287 - 292;doi: 10.1109/UCC.2011.462011
"Enhancement of thermoelectric efficiency by uniaxial tensile stress in n-type GaAs nanowires"
proceedings of IEEE nano conference, Portland, Aug, 2011.;doi:978-1-4577-1515-02011PaperNot Cited Yet
"Social Networks of Researchers and Educators on nanoHUB.org"
proceedings of the 11th IEEE/ACM International Symposium on Cluster, Cloud and Grid Computing, CCGrid 2011, Newport Beach, CA, USA, May 23-26, 2011;doi:10.1109/CCGrid.2011.332011
"Computational Study of the Electronic Performance of Cross-Plane Superlattice Peltier Devices"
Proceedings of the MRS Spring Meeting, Published March 14 2011;doi:10.1557/opl.2011.5092011PaperNot Cited Yet
"Automated Grid-Probe System to Improve End-To-End Grid Reliability for a Science Gateway"
Proceedings of TeraGrid 2011 conference. July 18-21, 2011, Salt Lake City, ACM proceedings, ISBN: 978-1-4503-0888-5;doi:10.1145/2016741.20167892011
"Performance enhancement of GaAs UTB pFETs by strain, orientation and body thickness engineering"
proceedings of the IEEE Device Research Conference (DRC), June 20-22 2011;doi:10.1109/DRC.2011.59945112011
"The Nanoelectronic Modeling Tool NEMO 5: Capabilities, Validation, and Application to Sb-Heterostructures"
proceedings of the IEEE Device Research Conference (DRC), June 20-22 2011;doi:10.1109/DRC.2011.59944042011
"Tuning lattice thermal conductance in ultra-scaled hollow SiNW: Role of porosity size, density and distribution"
proceedings of the MRS Spring Meeting, 2011. SanFransisco, April 25th - 29th;doi:10.1557/opl.2011.14642011PaperNot Cited Yet
"Multiscale Modeling of a Quantum Dot Heterostructures"
presented at MRS Spring Meeting 2011, YY10.2, San Francisco CA,2011
"Parameter Fitting for Lattice Properties of Gallium Arsenide using Parallel Genetic Algorithm"
2011 IEEE Congress on Evolutionary Computation, 5-8 June 2011;doi:10.1109/CEC.2011.59499182011PaperNot Cited Yet
"A New Method to Achieve RF Linearity in SOI Nanowire MOSFETs"
IEEE 2011 RFIC Symposium, ISBN: 978-1-4244-8293-1 ;doi:10.1063/1.36246122011
"A comprehensive atomistic analysis of bandstructure velocities in si nanowires"
Computational Electronics (IWCE), 2010 14th International Workshop, Pisa, Italy, 26-29 Oct. 2010, Page(s): 1-4;doi : 10.1109/IWCE.2010.56780072010
"First Principles Study of the Energetics of Ideal GaAs Surfaces and Adsorption of Al and O as a Function of Surface Oorientation"
41st IEEE Semiconductor Interface Specialists Conference, The Catamaran Hotel, San Diego, CA, December 2-4, 20102010Not Cited Yet
"Phonon-limited mobility and injection velocity in n- and p-doped ultrascaled nanowire field-effect transistors with different crystal orientations"
proceedings of IEDM 2010, 6-8 Dec. 2010;doi:10.1109/IEDM.2010.57033242010
"Rough interfaces in THz quantum cascade lasers"
International Workshop for Computational Electronics, Publication Year: 2010 , Page(s): 1 - 4, Pisa, Italy;doi:10.1109/IWCE.2010.56779862010
"Valley Degeneracy in (110) Si Quantum Wells - Strain and Misorientation Effects"
Proceedings of the International Workshop for Computational Electronics, Pisa, Italy, October 2010;doi:10.1109/IWCE.2010.56779642010PaperNot Cited Yet
"Atomistic modeling of the phonon dispersion and lattice properties of free-standing <100> Si nanowires"
Proceedings of the International Workshop for Computational Electronics, Pisa, Italy, October 2010, Abstract on arXiv:1010.0367v1;doi:10.1109/IWCE.2010.56779592010preprint on cond-mat/1010.0367Abstact on cond-mat/1010.0367preprint on cond-mat/1010.0367Abstract on cond-mat/1010.0367Free PDF From Purdue LibraryCited by 3 / 35 Downloads
"User Flow Informatics to Personalize Learning in Engineering Cyber-environments - nanoHUB.org A Case Study"
proceedings of the ASEE 9th Global Colloquium on Engineering Education in Singapore on October 18 -21,20102010Not Cited Yet
"nanoHUB.org serving over 120,000 users worldwide: it's first cyber-environment assessment"
Nanotechnology (IEEE-NANO), 2010 10th IEEE Conference, Seoul Korea, Aug. 17-20, 2010, Page:90;doi:10.1109/NANO.2010.56977382010Free PDF From Purdue LibraryCited by 1 / 1 Downloads
"Equilibrium Bandstructure of a Phosphorus δ-doped Layer in Silicon using a Tight-binding Approach"
Proceedings of IEEE Nano 2010, Seoul Korea, Aug. 17-20, 20102010AbstractNot Cited Yet
"Modeling Fluctuations in the Threshold Voltage and ON-Current and Threshold Voltage Fluctuation due to Random Telegraph Noise"
Proceedings of IEEE Nano 2010, Seoul Korea, Aug. 17-20, 2010;doi:10.1109/NANO.2010.56978212010
"Atomistic modeling of the thermoelectric power factor in ultra-scaled silicon nanowires"
proceedings of 2010 IEEE Silicon Nanoelectronics Workshop, Hilton Hawaiian Village, Honolulu, HI, June 13-14, 2010 ;doi:10.1109/SNW.2010.55625832010AbstractFree PDF From Purdue LibraryNot Cited Yet
"Scattering in Si-nanowires - Where does it matter?"
proceedings of 2010 IEEE Silicon Nanoelectronics Workshop, Hilton Hawaiian Village, Honolulu, HI, June 13-14, 2010 ;doi:10.1109/SNW.2010.55625862010AbstractFree PDF From Purdue LibraryNot Cited Yet
"Quantum transport in ultra-scaled phosphorous-doped silicon nanowires"
proceedings of 2010 IEEE Silicon Nanoelectronics Workshop, Hilton Hawaiian Village, Honolulu, HI, June 13-14, 2010;doi:10.1109/SNW.2010.55625852010
"III-V FET Channel Designs for High Current Densities and Thin Inversion Layers"
proceedings of Device Research Conference (DRC), 21-23 June 2010, pg. 149 - 152;doi:10.1109/DRC.2010.55518822010
"Bridging engineering practice and learning through cyber-environments"
Proceedings of the workshop on Engineering Learning at the International Conference on the Learning Sciences June 28, 2010, Chicago, IL.2010AbstractNot Cited Yet
"Atomistic simulations for SiGe pMOS devices Bandstructure to Transport"
ISDRS 2009, December 9-11, 2009, College Park, MD, USA. Page(s):1-2;doi:10.1109/ISDRS.2009.53780652009
"Study of Ultra-scaled SiGe/Si Core/Shell Nanowire FETs for CMOS Applications"
ISDRS 2009, December 9-11, 2009, College Park, MD, USA. Page(s):1-2;doi:10.1109/ISDRS.2009.53780032009
"Subthreshold Study of Undoped Trigate nFinFET"
Thin Solid Films.Page(s):2521-2523;doi:10.1016/j.tsf.2009.10.1142009AbstractFree PDF From Purdue LibraryNot Cited Yet
"Performance Analysis of Ultra-Scaled InAs HEMTs"
IEDM 2009, Dec. 7-9, 2009.Page(s):1-4;doi:10.1109/IEDM.2009.54243152009
"Performance Comparisons of Tunneling Field-Effect Transistors made of InSb, Carbon, and GaSb-InAs Broken Gap Heterostructures"
IEDM 2009, Dec. 7-9, 2009.Page(s):1-4;doi:10.1109/IEDM.2009.54242802009
"Diameter, orientation, and bias dependence of injection velocity and capacitance in Si nanowires: An atomistic tight-binding study"
IEEE SISPAD 2009, San Diego, Sept. 9 - 11, 2009.Page(s):1-4;doi:10.1109/SISPAD.2009.52902452009
"Investigation of In_{x}Ga_{1-x}As Ultra-Thin-Body Tunneling FETs using a Full-Band and Atomistic Approach"
IEEE SISPAD 2009, San Diego, Sept. 9 - 11, 2009. Page(s):1-4;doi:10.1109/SISPAD.2009.52902482009
"k.p-based Quantum Transport Simulation of Silicon Nanowire pMOSFETs"
Nanotechnology, 2009. IEEE-NANO 2009. 9th IEEE Conference on Publication Year: 2009 , Page(s): 374 - 3772009Not Cited Yet
"Advancing Nanoelectronic Device Modeling through Peta-Scale Computing and Deployment on nanoHUB"
Proceedings of the SciDAC Conference, San Diego, June 15-19, 2009, J. Phys.: Conf. Ser. Vol. 180, 012075 (16pp) ;doi : 10.1088/1742-6596/180/1/0120752009AbstractFree PDF From Purdue LibrarydoiCited by 12 / 67 Downloads
"Performance limitations of graphene nano ribbon tunneling FETS due to line edge roughness"
IEEE Device Research Conference, June 22-24, 2009.Page(s):201-202;doi:10.1109/DRC.2009.53549512009
"Proposal of ZnSe/GaAs Digital Alloys for High Band Gap Solar Cells and True Green LEDs"
2009 IEEE Nanotechnology Materials and Devices Conference (NMDC 2009), June 2-5, 2009, Traverse City, Michigan, USA . Page(s):217-220;doi:10.1109/NMDC.2009.51675422009PaperNot Cited Yet
"ABACUS and AQME: Semiconductor Device and Quantum Mechanics Education on nanoHUB.org"
to appear in IEEE proceedings of the 13th International Workshop on Computational Electronics, Tsinghua University, Beijing, May 27-29 2009. Page(s): 1-4;doi:10.1109/IWCE.2009.50910832009AbstractFree PDF From Purdue LibraryCited by 3 / 53 Downloads
"Million Atom Electronic Structure and Device Calculations on Peta-Scale Computers"
to appear in IEEE proceedings of the 13th International Workshop on Computational Electronics, Tsinghua University, Beijing, May 27-29 2009.Page(s):1-4;doi:10.1109/IWCE.2009.50911172009AbstractFree PDF From Purdue Librarypreprint on cond-mat/1003.4570Abstract cond-mat/1003.4570Cited by 12
"A Study of Temperature-dependent Properties of n-type delta-doped Si Band-structures in Equilibrium"
to appear in IEEE proceedings of the 13th International Workshop on Computational Electronics, Tsinghua University, Beijing, May 27-29 2009.Page(s):1-4;doi:10.1109/IWCE.2009.50910822009AbstractFree PDF From Purdue LibraryNot Cited Yet
"Quantum Confined Stark Shift and Ground State Optical Transition Rate in [100] Laterally Biased InAs/GaAs Quantum Dots"
to appear in IEEE proceedings of the 13th International Workshop on Computational Electronics, Tsinghua University, Beijing, May 27-29 2009.Page(s):1-4;doi:10.1109/IWCE.2009.50911402009AbstractFree PDF From Purdue LibraryCited by 3 / 275 Downloads
"On the validity of the top of the barrier quantum transport model for ballistic nanowire MOSFETs"
to appear in IEEE proceedings of the 13th International Workshop on Computational Electronics, Tsinghua University, Beijing, May 27-29 2009.Page(s):1-4;doi:10.1109/IWCE.2009.50911342009
"Surface and Orientation dependence on performance of Trigated Silicon Nanowire pMOSFETs"
proceedings of 7th IEEE Workshop on Microelectronics and Electron Devices (WMED 2009), Apr 03, 2009.Page(s):1-4;doi:10.1109/WMED.2009.48161452009
"Transport spectroscopy of a single atom in a FinFET"
Journal of Physics: Conference Series 2008, Vol 109, pp 012003;doi:10.1088/1742-6596/109/1/0120032008
"Addressing the charge and spin of a single dopant atom in a nano MOSFET"
proceedings of the MRS Fall Meeting, Boston, Dec. 1-4, 20082008Not Cited Yet
"Atomistic Understanding of a Single Gated Dopant Atom in a MOSFET"
proceedings of the MRS Spring meeting 2008 San Fransico 20082008PaperNot Cited Yet
"Determination of the eigenstates and wavefunctions of a single gated As donor"
International Conference on Nanoscience and Nanotechnology, ICONN 2008, Feb. 25-29, 2008, Page(s):164-167;doi : 10.1109/ICONN.2008.46392722008Article at IEEEAbstractFree PDF from Purdue LibraryNot Cited Yet
"From NEMO1D and NEMO3D to OMEN: moving towards atomistic 3-D quantum transport in nano-scale semiconductors"
INVITED paper in IEEE IEDM, San Francisco, USA, Dec. 15-17, 2008;doi : 10.1109/IEDM.2008.47966472008Article at IEEEAbstractFree PDF from Purdue LibraryCited by 9
"Transport-based dopant mapping in advanced FinFETs"
IEEE IEDM, San Francisco, USA, Dec. 15-17, 2008;doi : 10.1109/IEDM.2008.47967942008Article at IEEEAbstractFree PDF from Purdue LibraryCited by 7
"Full-Band and Atomistic Simulation of Realistic 40 nm InAs HEMT"
IEEE IEDM, San Francisco, USA, Dec. 15-17, 2008;doi :10.1109/IEDM.2008.47968422008Article at IEEEAbstractFree PDF from Purdue LibraryCited by 18
"A multi-level parallel simulation approach to electron transport in nano-scale transistors"
Supercomputing 2008, Austin TX, Nov. 15-21 2008. Regular paper - 59 accepted papers, 277 submissions (21%), preprint. Page(s):1-10;doi:10.1109/SC.2008.52159122008
"Contact Block Reduction Method for Ballistic Quantum Transport with Semi-empirical sp3d5s* Tight Binding Band Models"
IEEE Proceedings of the 2008 International Conference on Solid-State and Integrated-Circuit Technology (ICSICT), Pages 349-352, October 20-23, 2008, Beijing, China. ;doi : 10.1109/ICSICT.2008.47345432008AbstractFree PDF from Purdue LibraryArticle at IEEECited by 2 / 296 Downloads
"Full-band and atomistic simulation of n- and p-doped double-gate MOSFETs for the 22nm technology node"
2008 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2008, September 9-11, 2008, Yumoto Fujiya Hotel, Hakone, Japan, pages 17-20 ;doi : 10.1109/SISPAD.2008.464822008Article at IEEEAbstractFree PDF from Purdue LibraryCited by 9
"A parallel sparse linear solver for nearest-neighbor tight-binding problems"
14th International Conference on Parallel and Distributed Computing. August 26-29, Las Palmas de Gran Canaria, Spain, 89 accepted papers out of 264 submissions.;doi : 10.1007/978-3-540-85451-7_842008AbstractFree PDF from Purdue LibraryNot Cited Yet
"nanoHUB.org - online simulation and more materials for semiconductors and nanoelectronics in education and research"
8th IEEE Conference on Nanotechnology, 2008. NANO '08. Aug. 18-21 2008 Page(s):401-404;doi : 10.1109/NANO.2008.1242008Article at IEEEAbstractFree PDF from Purdue LibraryCited by 11
"Atomistic tight binding study of strain-reduced confinement potentials in identical and non-identical InAs/GaAs vertically stacked quantum dots"
8th IEEE Conference on Nanotechnology, 2008. NANO '08. Aug. 18-21 2008 Page(s):541-544;doi : 10.1109/NANO.2008.1612008Article at IEEEAbstractFree PDF from Purdue LibraryCited by 3
"OMEN an atomistic and full-band quantum transport simulator for post-CMOS nanodevices"
8th IEEE Conference on Nanotechnology, 2008. NANO '08. Aug. 18-21 2008 Page(s):354-357;doi : 10.1109/NANO.2008.1102008Article at IEEEAbstractFree PDF from Purdue LibraryCited by 13
"Orientation dependence of the charge distribution and quantum capacitance in silicon nanowire transistors"
Proceedings of TECHCON 2008, Austin, TX, September 15 - 16, 2008, 50% acceptance rate.2008AbstractFree PDF from Purdue LibraryCited by 1 / 558 Downloads
"Electronic Structure and Transport in Silicon Nano-Structures with Non-Ideal Bonding Environments"
Proceedings of TECHCON 2008, Austin, TX, September 15 - 16, 2008, 50% acceptance rate.2008AbstractFree PDF from Purdue LibraryNot Cited Yet
"1D hetero-structure tool for atomistic simulation of nano-devices"
Austin, TX, September 15 - 16, 2008, 50% acceptance rate.2008AbstractFree PDF from Purdue LibraryNot Cited Yet
"Strain-Engineered Self Organized InAs/GaAs Quantum Dots for Long Wavelength (1.3-1.5um) Optical Applications"
Proceedings of ICPS 2008 (International Conference on the Physics of Semiconductors), Rio de Janeiro, Brazil, July 27-Aug 1, 2008.2008AbstractFree PDF from Purdue LibraryNot Cited Yet
"Level Spectrum of Single Gated As Donors"
Proceedings of ICPS 2008 (International Conference on the Physics of Semiconductors), Rio de Janeiro, Brazil, July 27-Aug 1, 2008 (Oral presentation).;doi: 10.1063/1.32955702008AbstractFree PDF from Purdue LibraryNot Cited Yet / 76 Downloads
"A Nano-electronics Simulator for Petascale Computing: From NEMO to OMEN"
Proceedings of TeraGrid 2008, June 9-13, 2008, Las Vegas.2008AbstractFree PDF from Purdue LibraryNot Cited Yet
"Modeling and simulation of field-effect biosensors (BioFETs) and their deployment on the nanoHUB"
Journal of Physics: Conference Series, Vol. 107, pg. 012004 (2008).;doi: 10.1088/1742-6596/107/1/0120042008AbstractFree PDF from Purdue LibraryCited by 9 / 473 Downloads
"NEMO-3D based Atomistic Simulation of a Double Quantum Dot Structure for Spin-Blockaded Transport"
Proceedings of the 12th International Workshop on Computational Electronics, University of Massachusetts Amherst, Oct. 7-10, 2007.Vol 7,Page(s):403-406;doi:10.1007/s10825-008-0203-92007AbstractFree PDF from Purdue LibraryNot Cited Yet
"Atomistic NEGF Simulations of Carbon Nano-Ribbons in Magnetic Fields"
Proceedings of The 12th International Workshop on Computational Electronics, University of Massachusetts Amherst, Oct. 7-10, 20072007AbstractFree PDF from Purdue LibraryNot Cited Yet
"Simulation of nanowire transistors: Atomistic vs. Effective Mass Models"
Proceedings of The 12th International Workshop on Computational Electronics, University of Massachusetts Amherst, Oct. 7-10, 2007;doi : 10.1007/s10825-008-0188-42007
"Electronic Structure and Transmission Characteristics of SiGe Nanowires"
Proceedings of The 12th International Workshop on Computational Electronics, University of Massachusetts Amherst, Oct. 7-10, 2007;doi : 10.1007/s10825-008-0191-92007AbstractFree PDF from Purdue LibraryNot Cited Yet
"Eigenvalue Solvers for Atomistic Simulations of Electronic Structures with NEMO-3D"
Proceedings of The 12th International Workshop on Computational Electronics, University of Massachusetts Amherst, Oct. 7-10, 2007;doi : 10.1007/s10825-008-0223-52007AbstractFree PDF from Purdue LibraryNot Cited Yet
"Self-consistent simulations of nanowire transistors using atomistic basis sets"
Proceedings of The 12th International Conference on Simulation of Semiconductor Devices and Processes (SISPAD), Vienna Austria, September 25-27, 2007.;doi : 10.1007/978-3-211-72861-1_512007AbstractFree PDF from Purdue LibraryNot Cited Yet
"Self-consistent simulations of nanowire transistors using atomistic basis sets"
Proceedings of SRC's TECHCON 2007, September 10-12, 2007;doi : 10.1007/978-3-211-72861-1_512007AbstractFree PDF from Purdue LibraryNot Cited Yet
"Large Scale Simulations of Nanoelectronic devices with NEMO3-D on the Teragrid"
Proceedings of Teragrid 2007 Conference, Madison WI, June 2007.2007AbstractFree PDF from Purdue LibraryNot Cited Yet
"Nanoelectronics: Metrology and Computation"
proceedings of 2007 International Conference on Frontiers of Characterization and Metrology for Nanoelectronics, March 27-29, 2007, National Institutes of Standards and Technology, Gaithersberg, MD. conference proceedings will be published by AIP in a hardback book;doi:10.1063/1.27994372007AbstractFree PDF from Purdue LibraryNot Cited Yet / 220 Downloads
"Atomistic Simulation of Non-Degeneracy and Optical Polarization Anisotropy in Pyramidal Quantum Dots"
proceedings of IEEE NEMs Jan 16-19, 2007, pgs. 937-942, Bangkok Thailand. oral presentation, 340 submission, 90% acceptance, 55% oral presentations.;doi : 10.1109/NEMS.2007.3521722007
"The impact of the nanoscale vision on the future of learning and teaching"
Proc. SPIE 6328, Nanomodeling II, 63280N (8 September 2006);doi: 10.1117/12.6810722006paperNot Cited Yet
"Investigation of Device Parameters for Field-Effect DNA-Sensors by Three-Dimensional Simulation"
in proceedings of IEEE Nanotechnology Materials and Devices Conference, October 22-25, pg 154, 2006. (about 67% acceptance rate);doi : 10.1109/NMDC.2006.43887252006Article at IEEEabstractFree PDF from Purdue LibraryCited by 2
"Investigation of Conventional DNAFETs for Genome-wide Detection of Polymorphisms"
Proceedings of Eurosensor Conference, Goteborg, Sweden, September 21, 20062006PaperNot Cited Yet
"A study of alloyed nanowires from two perspectives: Approximate dispersion and transmission"
proceedings of the 28th International Conference on the Physics of Semiconductors, ICPS 2006, Vienna, Austria, July 24-28 2006, AIP Conference Proceedings Volume 893, pp 711-712;doi : 10.1063/1.27300882006abstractFree PDF from Purdue LibraryPaperCited by 4 / 84 Downloads
"Symmetry Breaking and Fine Structure Splitting in Self-Assembled Zincblende Quantum Dots: Atomistic Simulations of Long-Range Strain and Piezoelectric Field"
proceedings of the 28th International Conference on the Physics of Semiconductors, ICPS 2006, Vienna, Austria, July 24-28 2006, AIP Conference Proceedings Volume 893, pg 849;doi: 10.1063/1.27301572006PaperNot Cited Yet
"Strain and electronic structure interactions in realistically scaled quantum dot stacks"
proceedings of the 28th International Conference on the Physics of Semiconductors, ICPS 2006, Vienna, Austria, July 24-28 2006, AIP Conference Proceedings Volume 893, pg 849.;doi : 10.1063/1.27301562006
"NEMO 3-D and nanoHUB: Bridging Research and Education"
proceedings of IEEE-NANO 2006. Sixth IEEE Conference on Nanotechnology, 17-20 June 2006, Vol. 2, pg. 441-444 ;doi :10.1109/NANO.2006.2476822006
"Computational aspects of the three-dimensional feature-scale simulation of silicon-nanowire field-effect sensors for DNA detection"
Extended Abstract in Proceedings of 11th International Workshop on Computational Electronics (IWCE 11), Vienna, Austria, May 2006.;doi:10.1007/s10825-006-0139-x2006AbstractFree PDF From Purdue LibraryNot Cited Yet
"Transport Calculation of Semiconductor Nanowires Coupled to Quantum Well Reservoirs"
Extended Abstract in Proceedings of 11th International Workshop on Computational Electronics (IWCE 11), Vienna, Austria, May 2006 ;doi:10.1007/s10825-006-0108-42006Free PDF From Purdue LibraryNot Cited Yet
"Coupled mode space vs Real space approach for the simulation of CNT-FETs"
Extended Abstract in Proceedings of 11th International Workshop on Computational Electronics (IWCE 11), Vienna, Austria, May 2006. Vol 6,Issue:4,Page(s):475-480;doi:10.1109/TNANO.2007.8968422006AbstractFree PDF from Purdue LibraryNot Cited Yet
"Non-Equilibrium Green's Function (NEGF) Simulation of Metallic Carbon Nanotube Transistors: Impact of Vacancy Defect "
Extended Abstract in Proceedings of 11th International Workshop on Computational Electronics (IWCE 11), Vienna, Austria, May 2006. ;doi: 10.1007/s10825-006-0116-42006AbstractFree PDF from Purdue LibraryNot Cited Yet
"Energy dispersion relations for holes in silicon quantum wells and quantum wires"
Extended Abstract in Proceedings of 11th International Workshop on Computational Electronics (IWCE 11), Vienna, Austria, May 2006.;doi : 10.1007/s10825-006-0103-92006AbstractFree PDF from Purdue LibraryNot Cited Yet
"The NCN: Science, Simulation, and Cyber Services"
2006 IEEE Conference on Emerging Technologies - Nanoelectronics, 10-13 Jan. 2006 Page(s):496 - 500;doi:10.1109/NANOEL.2006.16097792006
"The nanoHUB: A science Gateway for nanotechnology"
Proceedings in GGF14 - The Fourteenth Global Grid Forum, Science Gateways workshop, June 27-30, 2005 Chicago, IL, USA2005paperNot Cited Yet
"Bandstructure and orientation effects in ballistic Si and Ge nanowire FETs"
2005 IEEE International Electron Devices Meeting, Washington, DC, December 5 - 7, 2005. (One of 27 accepted out 120 submitted Modeling and Simulation abstracts);doi : 10.1109/IEDM.2005.16093992005
"Novel channel materials for ballistic nanoscale MOSFETs bandstructure effects"
2005 IEEE International Electron Devices Meeting, Washington, DC, December 5 - 7, 2005. (One of 27 accepted out 120 submitted Modeling and Simulation abstracts) ;doi : 10.1109/IEDM.2005.16094212005
"Performance of Carbon Nanotube Field Effect Transistors with doped source and drain extensions and arbitrary geometry"
Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International . Page(s):522-525;doi:10.1109/IEDM.2005.16093972005
"VolQD: direct volume rendering of multi-million atom quantum dot simulations"
IEEE Visualization 2005, October 23-28, Minneapolis, Minnesota, USA, one of 88 accepted from 268 submissions;doi : 10.1109/VISUAL.2005.1532811 ; doi : 10.1109/ESSDER.2005.15467032005
"Three-dimensional atomistic simulation of Carbon Nanotube FETs with realistic geometry"
European Solid-State Device Research Conference, ESSDERC, Grenoble, France, 12 - 16 September 2005, pages 537-540;doi : 10.1109/ESSDER.2005.15467032005Conference siteArticle at IEEEAbstractFree PDF from Purdue LibraryCited by 9
"Atomistic simulations of long-range strain and spatial asymmetry effects in multimillion-atom single and double quantum dot nanostructures"
SISPAD 2005, International Conference on Simulation of Semiconductor Processes and Devices, Komaba Eminence, Tokyo, Japan, September 1-3, 2005. pg 335-338;doi: 10.1109/SISPAD.2005.2015412005Conference SiteArticle at IEEEAbstractFree PDF from Purdue LibraryCited by 2
"Building and Deploying Community Nanotechnology Software Tools on nanoHUB.org and Atomistic simulations of multimillion-atom quantum dot nanostructures"
Proceedings of the 5th IEEE Conference on Nanotechnology, July 11-15, pg 807, Vol 2 (2005);doi : 10.1109/NANO.2005.15006542005Article at IEEENot Cited Yet
"Evolutionary Computation Technologies for the Automated Design of Space Systems"
Proceedings. 2005 NASA/DoD Conference on Evolvable Hardware, 2005. 29 June-1 July 2005, pg 131-138;doi : 10.1109/EH.2005.242005
"Atomistic Simulations in Nanostructures Composed of Tens of Millions of Atoms:Importance of long-range Strain Effects in Quantum Dots"
2005 NSTI Nanotechnology Conference and Trade Show, Anaheim, CA, May 8-12, 2005.2005
"What do Mambo, VNC, UML and Grid computing have in common?"
2005 Linux Cluster Institute Conference, Raleigh, NC, April, 20052005ProceedingsCiteSeerXNot Cited Yet
"Large Scale Simulations in Nanostructures with NEMO3-D on Linux Clusters"
2005 Linux Cluster Institute Conference, Raleigh, NC, April, 20052005
"Evolutionary Computation Technologies for the Automated Design of Space Systems"
IEEE Aerospace Conference Proceedings, 5-12 March 2005 Page(s):1 - 12 . ;doi : 10.1109/EH.2005.242004
"Bandstructure Effects in Nanoscale MOSFETs"
IEEE IEDM, San Francisco, CA, Dec. 6-8 2004, pgs. 139-142;doi : 10.1109/IEDM.2004.14190892004
"Manufacturability and Electrical Characteristics of Si/SiGe Interband Tunnelling Diodes"
ASDAM '04, Proceedings of The Fifth International Conference on Advanced Semiconductor Devices and Microsystems, Smolenice Castle, Slovakia, Oct. 17-21, 2004, IEEE Catalog Number 04EX867, ISBN 0-7803-8535-7, Library of Congress: 2004105360;doi : 10.1109/ASDAM.2004.14411502004Article at IEEENot Cited Yet
"Electron Exchange Interaction in Electronically Confined Si Quantum Dots"
IEEE proceedings of the 10th International Workshop for Computational Electronics (IWCE), Purdue University, West Lafayette, Oct. 24-27, 2004. Page(s):115 ;doi : 10.1109/IWCE.2004.14073522004Article at IEEENot Cited Yet
"Electronic Properties of Silicon Nanowires"
IEEE proceedings of the 10th International Workshop for Computational Electronics (IWCE), Purdue University, West Lafayette, Oct. 24-27, 2004;doi : 10.1109/IWCE.2004.14073342004article at IEEEAbstractFree PDF from Purdue LibraryNot Cited Yet
"Nanoscale Device Simulation at the Scaling Limit and Beyond"
International Conference on Solid State Devices and Materials (SSDM 2004), Tokyo, Japan, Sept. 14-17, 2004.2004Not Cited Yet
"NEMO 1-D: the first NEGF-based TCAD tool"
IEEE SISPAD 2004, Keynote Speaker, Munich, Germany, September 2-4, 2004;doi:10.1007/978-3-7091-0624-2_22004AbstractFree PDF from Purdue LibraryNot Cited Yet
"Coherent Transport in SWCNTs with Spin-Orbit Coupling"
IEEE Nano 2004, pgs. 89-91, Munich, Germany, August 16-19, 2004;doi : 10.1109/NANO.2004.13922592004
"The effect of the strain relaxation in InAs/GaAs stacked quantum dots and multiple quantum wells on the Raman spectrum"
12-th International Symposium "Nanostructures: Physics and Technology" June 21-25, 2004, St Petersburg, Russia2004AbstractFree PDF from Purdue LibraryProceedingsJPLNot Cited Yet
"Coupled electron and nuclear spin dynamics in InAs quantum dots: impact on single and two-qubit operations"
Quantum Dot 2004, Banff, Alberta, Canada, May 10-13, 20042004ProceedingsJPLNot Cited Yet
"Effect of wetting layers on the strain and electronic structure of InAs self-assembled quantum dots"
Quantum Dot 2004, Banff, Alberta, Canada, May 10-13, 2004.;doi : 10.1103/PhysRevB.70.1253072004ProceedingsAbstractFree PDF from Purdue LibraryNot Cited Yet
"Atomistic-Level Simulation of the Vibration Spectrum of Quantum Dot Crystals"
Quantum Dot 2004, Banff, Alberta, Canada, May 10-13, 2004.2004ProceedingsJPLNot Cited Yet
"Evolutionary Computing for Spacecraft Power Subsystem Design Search and Optimization"
Proceedings of IEEE Aerospace Conference, Big Sky, Montana, March 2004, pg 4004-4014.;doi : 10.1109/AERO.2004.13682192004
"Electron spin dephasing and decoherence by interaction with nuclear spins in self-assembled quantum dots"
published in proceedings of Winter International Symposium on Information and Communication Technologies, January 5-8, 2004, Cancun, Mexico.2004JPLNot Cited Yet
"Conduction band valley splitting in silicon nano-structures"
Sixth International Conference on New Phenomena in Mesoscopic Structures, Fourth International Conference on Surfaces and Interfaces of Mesoscopic Devices, December 1-5, 2003, Maui, Hawaii.2003JPL Journal LinkNot Cited Yet
"Numerical surface treatment for finite-extent semiconductor nanostructures"
14th Workshop on Modelling and Simulation of Electron Devices, Barcelona, Spain. October 16-17 2003.2003ProceedingJPL Journal LinkNot Cited Yet
"Comparison of Numerical Quantum Device Models"
International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2003), September 3-5, 2003, Boston, MA, pages 171 -174;doi : 10.1109/SISPAD.2003.12336642003
"Near Real-Time Parallel Image Processing using Cluster Computers"
International Conference on Space Mission Challenges for Information Technology (SMC-IT), Pasadena, CA July 13-16, 2003.;doi :10.1023/B:JCEL.0000011421.53762.972003
"Study of Strain Boundary Conditions and GaAs Buffer Sizes in InGaAs Quantum Dots"
Extended Abstract in Proceedings of International Workshop on Computational Electronics, Frascati, Rome, Italy, May 25-28, 2003.2003Extended AbstractPresentationJPL Journal LinkNot Cited Yet
"Quantum and semi-classical transport in RTDs using NEMO 1-D"
Extended Abstract in Proceedings of International Workshop on Computational Electronics, Frascati, Rome, Italy, May 25-28, 2003.;doi :10.1023/B:JCEL.0000011421.53762.972003Extended AbstractPresentationNot Cited Yet
"Quantum cascade laser simulation using an sp3s* full Brillouin zone tight-binding model"
2003 Conference on Lasers and Electro-Optics Europe, CLEO/Europe. Munich, 22-27 June 2003 Page(s):182;doi : 10.1109/CLEOE.2003.13122432003Extended AbstractArticle at IEEEAbstractFree PDF from Purdue LibraryNot Cited Yet
"Study of Alloy Disorder in Quantum Dots Through Multi-million Atom Simulations"
Pasadena, CA: Jet Propulsion Laboratory, National Aeronautics and Space Administration, 2003.2003Extended AbstractNot Cited Yet
"Nanoelectronic 3-D (NEMO 3-D) Simulation of Multimillion Atom Quantum Dot Systems"
SISPAD 2002, Kobe, Japan, Sept. 3-6, pg 163 - 166, 2002;doi : 10.1109/SISPAD.2002.10345422002
"Status of the Nanoelectronic Modeling tool (NEMO 1-D and 3-D) and its planned extension to Spintronics"
The first International Workshop on Quantum Dots for Quantum Computing and Classical Size Effect Circuits, Kochi, Japan, Jan 26-28, 20022002Extended AbstractIWQDQCJPLNot Cited Yet
"Applications on High Performance Cluster Computers Production of Mars Panoramic Mosaic Images"
Proceedings of the 2001 AMOS Technical Conference September 10-14, 2001, Maui2001AMOS Technical ConferenceConference PresentationPDFCiteSeerXNot Cited Yet
"Full Brillouin-Zone, Charge Self-consistent Quantum Transport Simulations Enabled by Parallelization of the Nanoelectronic Modeling Tool (NEMO 1-D) on a Beowulf Cluster"
8th International Workshop on Computational Electronics October 15-18, 2001, Univ. of Illinois, Extended abstract in conference handout.;doi: 10.1023/A:10207678118142001PaperNot Cited Yet
"Atomistic Electronic Structure Calculations of Unstrained Alloyed Systems Consisting of a Million Atoms"
8th International Workshop on Computational Electronics October 15-18, 2001, Univ. of Illinois. Extended abstract in conference handout.;doi :10.1023/A:102077481950920018th International Workshop on Computational ElectronicsNot Cited Yet
"The Use of Cluster Computers Systems for NASA/JPL Applications"
Proceedings of AIAA Space 2001 Conference and Exposition Albuquerque, New Mexico 28-30 August 2001.2001
"Large-Scale Design and Optimization Using Cluster Computers"
Proceedings of IEEE AP-S International Symposium and USNC/URSI National Radio Science Symposium, Boston, MA, July 8-13 (2001)2001
"Atomistic simulation of quantum dots including strain and bandstructure and full band simulation of hole transport in 1-D heterostructures"
7th International Workshop on Computational Electronics, 2000, Univ. of Glasgow, book of abstracts, pages 6-7;doi : 10.1109/IWCE.2000.8698932000
"EHWPack: an Evolvable Hardware Environment using the Spice Simulator and the Field Programmable Transistor Array"
In the Proceedings of ANNIE 2000 (Smart Enginering System Design), St. Louis, MO, November 5-8, 20002000
"Transverse Momentum Dependence of Electron and Hole Tunneling in a Full Band Tight-Binding Simulation"
Proceedings of the 27th international Symposium on Compound Semiconductors (ISCS), IEEE, pg. 257 (2000);doi : 10.1109/ISCS.2000.9471652000PDFArticle at IEEENot Cited Yet
"Evolution of analog circuits on field programmable transistor arrays"
Proceedings of 2nd NASA/DoD Workshop on Evolvable Hardware, July 13-15, pg. 99-108, 2000;doi : 10.1109/EH.2000.8693472000
"EHWPack: A Parallel Software/Hardware Environment for Evolvable Hardware"
In Whitley Darrell (eds.), Proceedings of the Genetic and Evolutionary Computation Conference (GECCO-2000), July 8-12, 2000, Las Vegas, Nevada USA. San Francisco, CA: Morgan Kaufmann. 2000
"Evolutionary Design of Electronic Devices and Circuits"
Proceedings of the 1999 Congress on Evolutionary Computation, IEEE, CEC 99, Vol. 2, Pages: 1271-1278;doi : 10.1109/CEC.1999.7825881999
"Genetically Engineered Microelectronic Infrared Filters"
Proceedings of the First NASA/DoD Workshop on Evolvable Hardware, IEEE 1999 , Page(s): 242 -246.;doi : 10.1109/EH.1999.7854591999
"Genetically Engineered Nanoelectronics"
Proceedings of the First NASA/DoD Workshop on Evolvable Hardware, IEEE 1999 , Page(s): 247 -248.;doi : 10.1109/EH.1999.7854601999
"Integrated Design and Optimization of Microelectronic Devices"
Proceedings of 1999 Aerospace Conference, IEEE Volume: 5 , 1999 , Page(s): 131 -138;doi : 10.1109/AERO.1999.7901961999
"Genetically Engineered Nanostructure Devices"
in "Materials in Space Science, Technology, and Exploration" MRS Symposium Proceedings, Vol. 551, pg. 149 (1999).1999
"NEMO Quantum Device Simulator"
1998 Government Microcircuit Applications Conference Digest of Papers (GOMAC), March 1998, p. 218.1998
"Physical Oxide Extraction and Versification using Quantum Mechanical Simulation"
Proceedings of IEDM 1997, IEEE, 869 (1997);doi : 10.1109/IEDM.1997.6505181997
"Dopant Fluctuations and Quantum Effects in Sub-0.1um CMOS"
Proceedings of the 1997 International Semiconductor Device Research Symposium, p. 1.1997Not Cited Yet
"Resonant Tunneling in Disordered Materials such as SiO2/Si/SiO2"
Proceedings of the 24th International Symposium on Compound Semiconductors, September 8-11, San Diego, CA, (1997). Inst. Phys. Conf. Ser. 156: 617-620, 1998;doi : 10.1109/ISCS.1998.7117531997Article at IEEENot Cited Yet
"NEMO: General Release of a New Comprehensive Quantum Device Simulator"
Proceedings of the Twenty-Forth International Symposium on Compound Semiconductors, IEEE, NJ (1997). Inst. Phys. Conf. Ser. 156: 639-642, 1998;doi : 10.1109/ISCS.1998.7117581997
"Ultralow Current Density RTDs for Tunneling-based SRAM"
Proceedings of the 24th International Symposium on Compound Semiconductors, September 8-11, San Diego, CA, (1997). Inst. Phys. Conf. Ser. 156: 601-604, 1998. ;doi : 10.1109/ISCS.1998.7117491997
"Nanoelectronic Modeling (NEMO): A New Quantum Device Simulator"
Proceedings of The Second NASA Device Modeling Workshop, August 7-8, 1997, page 70-84, Edited by Subhash Saini. You can request a copy of this from NAS Library, MS 258-5, NASA Ames research center, Moffett Field, CA 94035-1000.1997
"Quantitative Simulation of Strained InP-Based Resonant Tunneling Diodes"
in Proceedings of the 1997 55th IEEE Device Research Conference Digest, IEEE, NJ, p. 92 (1997);doi : 10.1109/DRC.1997.6124871997
"Design and Implementation of Resonant Tunneling Devices into Circuits and Applications"
in Proceedings of PHASDOM 97, Phantoms Strategic Domain Meetings, Aachen, Germany 10-13 March 1997.1997Not Cited Yet
"Experimentally Verified Quantum Device Simulations Based on Multiband Models, Hartree Selfconsistency, and Scattering Assisted Charging"
in Proceedings of the 1996 54th IEEE Device Research Conference Digest, IEEE, NJ, p. 174, 1996;doi : 10.1109/DRC.1996.5464251996
"Quantitatively Accurate Simulation of Quantum Semiconductor Devices"
Proceedings of International Workshop on Physics and Computer Modeling of Devices Based on Low-Dimensional Structures. IEEE Comp. Soc. Press, Los Alamitos, CA, p.2-5, 1996;doi : 10.1109/PCMDLS.1995.41996Article at IEEENot Cited Yet
"Numerical Approximations for Polar Optical Phonon Scattering in Resonant Tunneling Diodes in Quantum Devices and Circuits"
edited by K. Ismail, S. Bandyopadhyay, ed J. P. Leburton, Imperial Press London (1996).1996paperNot Cited Yet
"Nanoelectronic Modeling (NEMO)"
in Proceedings of the 1995 53rd Device Research Conference Digest, IEEE, NJ p. 52, 1995;doi : 10.1109/DRC.1995.4962671995
"Efficient I-V simulation of quantum devices using full bandstructure models"
Proceeding of IEEE Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, IEEE, New York, NY, p.435, 1995;doi : 10.1109/CORNEL.1995.4825371995Article at IEEENot Cited Yet
"Resonant Tunneling devices: Effect of Scattering"
International Symposium on Compound Semiconductors, San Diego, Sept. 18-24, 1994. Inst. Phys. Conf. Ser. No 1411995Not Cited Yet
"The Phonon Peak in Resonant Tunneling Diodes"
Journal of the Electrochemical Society, (1995)1995Not Cited Yet
"High Bias Transport through Quantum Dots"
Journal of the Electrochemical Society, (1995)1995Not Cited Yet