Abhijeet Paul

Strain effects on the phonon thermal properties of ultra-scaled Si nanowires

Strain effects on the phonon thermal properties of ultra-scaled Si nanowires Abhijeet Paul and
Gerhard Klimeck

Objective:

  • Engineering material thermal properties using strain to improve system level performance.

Approach:

  • Modified Valence Force Field to model phonons in strained Si nanowires
  • Study the effect of strain on specifc heat (Cv) and thermal conductance (kl).

Result:

  • Uniaxial strain effectively tunes Îșl.

  • Hydro-static strain tunes Cv

Impact:


  • Published in APL, 99, 083115 (2011); doi:10.1063/1.3630228
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    Abhijeet Paul's Pages

    Biography Publications Orientation dependance of charge distribution in silicon nanowire transistors. Development of tools and simulators for Discover and Learning. Top-of-the-Barrier Model surface and transport oreintation on P-type Nanowire FETs Top-of-the-Barrier Model with experimental CV dataTight-binding Virtual Crystal Approximation model for SiGePerformance Analysis of SiGe/Si core/shell NWFETsAtomistic modeling of thermoelectric power factor in Si Nanowires Modified Valence Force Field (MVFF) method for Si and Ge bulk Modified Valence Force Field (MVFF) method for Si nanowires Interface trap density extraction in Si nfinFETs. Simulation of CV curves for biaxially strained SiGe pMOSFETs. Tunability of lattice thermal conductance in Siand Ge nanowires using porosity Strain effects on the phonon thermal properties of ultra-scaled Si nanowires