Abhijeet Paul

Simulation of CV curves for biaxially strained SiGe pMOSFETs

Objective:

  • Simulation of CV for bulk SiGe p-mosFETs and matching to experimental CV data.

Approach:

  • Obtain bandstructure for SiGe using Tight-binding based VCA approach.
  • Extract effective masses and band-offsets from TB calcualtions.
  • Run self-consistent CV simulations.

Impact:

  • Work published in IEEE, EDL, 2011. DOI: 10.1109/LED.2010.2099101

Results:

  • Very good match with experimental CV curve for 3 different types of SiGe p-MOSFETs.
  • Improvement in both performance and reliability shown due to improvement in transport hole effective mass and increase in hole tunneling current.

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Abhijeet Paul's Pages

Biography Publications Orientation dependance of charge distribution in silicon nanowire transistors. Development of tools and simulators for Discover and Learning. Top-of-the-Barrier Model surface and transport oreintation on P-type Nanowire FETs Top-of-the-Barrier Model with experimental CV dataTight-binding Virtual Crystal Approximation model for SiGePerformance Analysis of SiGe/Si core/shell NWFETsAtomistic modeling of thermoelectric power factor in Si Nanowires Modified Valence Force Field (MVFF) method for Si and Ge bulk Modified Valence Force Field (MVFF) method for Si nanowires Interface trap density extraction in Si nfinFETs. Simulation of CV curves for biaxially strained SiGe pMOSFETs. Tunability of lattice thermal conductance in Siand Ge nanowires using porosity Strain effects on the phonon thermal properties of ultra-scaled Si nanowires

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