Abhijeet Paul

Simulation of CV curves for biaxially strained SiGe pMOSFETs


  • Simulation of CV for bulk SiGe p-mosFETs and matching to experimental CV data.


  • Obtain bandstructure for SiGe using Tight-binding based VCA approach.
  • Extract effective masses and band-offsets from TB calcualtions.
  • Run self-consistent CV simulations.


  • Work published in IEEE, EDL, 2011. DOI: 10.1109/LED.2010.2099101


  • Very good match with experimental CV curve for 3 different types of SiGe p-MOSFETs.
  • Improvement in both performance and reliability shown due to improvement in transport hole effective mass and increase in hole tunneling current.

Powerpoint slide as ppt, pdf, or as image below.