Abhijeet Paul

Tunability of lattice thermal conductance in Siand Ge nanowires using porosity

Objective:

  • Tunability of lattice thermal conductance (kl) using porous nanowires.

Approach:

  • Obtain phonon dispersion in hollow nanowires using Modified VFF model...
  • Calculate thermal conductance using Landauer's model.

 

Impact:

  • Work published in APL, 2011. 98, 083106 (2011); doi:10.1063/1.3556648

Results:

  • Reduction in lattice thermal conductance as high as 30% obtained by 20% atom removal.
  • Weak material dependence, Si and Ge nanowires show similar reduction.
  • Mode reduction and phonon localization associated with reduction in lattice thermal conductance. .

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Abhijeet Paul's Pages

Biography Publications Orientation dependance of charge distribution in silicon nanowire transistors. Development of tools and simulators for Discover and Learning. Top-of-the-Barrier Model surface and transport oreintation on P-type Nanowire FETs Top-of-the-Barrier Model with experimental CV dataTight-binding Virtual Crystal Approximation model for SiGePerformance Analysis of SiGe/Si core/shell NWFETsAtomistic modeling of thermoelectric power factor in Si Nanowires Modified Valence Force Field (MVFF) method for Si and Ge bulk Modified Valence Force Field (MVFF) method for Si nanowires Interface trap density extraction in Si nfinFETs. Simulation of CV curves for biaxially strained SiGe pMOSFETs. Tunability of lattice thermal conductance in Siand Ge nanowires using porosity Strain effects on the phonon thermal properties of ultra-scaled Si nanowires

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