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Surface and transport oreintation on P-type Nanowire FETs
Performance of Trigated Silicon Nanowire pMOSFETs : Surface and Orientation dependence | Abhijeet Paul, Saumitra Mehrotra, Mathieu Luisier and Gerhard Klimeck |
Objective:
Approach Self-Consistent Scheme
Impact:
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Results: <110> channel device with maximum number of [110] surfaces shows maximum ION. Comparison of 1D charge and carrier velocity Vinj at VGS = VDD.
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