|Validity of the Top of the Barrier model for Quantum Transport in Nanowire MOSFETs||Abhijeet Paul, Saumitra Mehrotra, Gerhard Klimeck and Mathieu Luisier|
[b]Flowchart of procedure
ID-VG from 2D ToB (with DIBL)matches quite well with 3D OMEN result for  wire with Lc = 15nm and W = H = 3nm.
2D ToB simulation time is less compared to 3D. Speedup is very rapid for larger cross-section devices.