Abhijeet Paul

Modified Valence Force Field (MVFF) method for Si nanowires

Objective:

  • Application of Modified VFF for phonon modeling in free-standing

Approach:

  • Modified VFF -> potential energy (U) -> Dynamical matrix + boundary conditions -> Phonons.

Impact:

  • Work published in IEEE IWCE, 2010, doi:

Results:

  • Bulk and wire modes very different.
  • New modes of vibration in SiNW..
  • Vsound (NW) < Vsound (bulk).
  • Thermal conductance inc. with wire cross-section.

Powerpoint slide as ppt, pdf, or as image below.

Abhijeet Paul's Pages

Biography Publications Orientation dependance of charge distribution in silicon nanowire transistors. Development of tools and simulators for Discover and Learning. Top-of-the-Barrier Model surface and transport oreintation on P-type Nanowire FETs Top-of-the-Barrier Model with experimental CV dataTight-binding Virtual Crystal Approximation model for SiGePerformance Analysis of SiGe/Si core/shell NWFETsAtomistic modeling of thermoelectric power factor in Si Nanowires Modified Valence Force Field (MVFF) method for Si and Ge bulk Modified Valence Force Field (MVFF) method for Si nanowires Interface trap density extraction in Si nfinFETs. Simulation of CV curves for biaxially strained SiGe pMOSFETs. Tunability of lattice thermal conductance in Siand Ge nanowires using porosity Strain effects on the phonon thermal properties of ultra-scaled Si nanowires

Research Group

Members Alumni Visitors Pictures Prospective Students Member Access