Abhijeet Paul

Orientation dependance of charge distribution in silicon nanowire transistors.

Electronic charge distribution in silicon nanowire transistors Abhijeet Paul, Neophytos Neophytou Mathieu Luisier and Gerhard Klimeck

Objective:

  • Understand the charge distribution in silicon nanowires.
  • What factors govern the charge distribution.

Approach:

  • Application of 2D Top of the barrier(ToB) model[J100]
  • Study effects of:
    • Crystal orientation
    • Cross-section shape
    • Cross-section size.

Impact:

  • Atomistic approach is essential to understand the charge distribution
  • Affects the overall electrostatics and transport characteristics of wires.
  • Results published in TECHCON 2008, [P96]

Results:

  • [100] and [110] wires are better for ntype devices. [111] bad for ntype devices.
  • Crystal and structural symmetry responsible the electron distribution in the wires.
  • Triangular wires are most symmetry breaking.

Powerpoint slide as ppt, pdf, or as image below.

Abhijeet Paul's Pages

Biography Publications Orientation dependance of charge distribution in silicon nanowire transistors. Development of tools and simulators for Discover and Learning. Top-of-the-Barrier Model surface and transport oreintation on P-type Nanowire FETs Top-of-the-Barrier Model with experimental CV dataTight-binding Virtual Crystal Approximation model for SiGePerformance Analysis of SiGe/Si core/shell NWFETsAtomistic modeling of thermoelectric power factor in Si Nanowires Modified Valence Force Field (MVFF) method for Si and Ge bulk Modified Valence Force Field (MVFF) method for Si nanowires Interface trap density extraction in Si nfinFETs. Simulation of CV curves for biaxially strained SiGe pMOSFETs. Tunability of lattice thermal conductance in Siand Ge nanowires using porosity Strain effects on the phonon thermal properties of ultra-scaled Si nanowires

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