Abhijeet Paul

Tight-binding Virtual Crystal Approximation model for SiGe

Tight-binding Virtual Crystal Approximation model for SiGe Abhijeet Paul, Saumitra Mehrotra, Mathieu Luisier and Gerhard Klimeck

Objective:

  • Bandstructure model forSiGe mosFETS. (higher hole and electron mobility compared to Si).
  • Benchmarking with Experimental Bandedge data.

Approach:

  • VirtualCrystalApproximationinTB(TB-VCA):
  • Adjustbond-lengthforinternalstrain.
  • TB-Hamiltonian accounting for internal and external strain

Impact:

Experimental benchmark of bandedge data in relaxed and biaxially
strained SiGe bulk.

Results:

  • Very good match with experimental data
  • For bandedges
  • For effective masses.

Powerpoint slide as ppt, pdf, or as image below.

Abhijeet Paul's Pages

Biography Publications Orientation dependance of charge distribution in silicon nanowire transistors. Development of tools and simulators for Discover and Learning. Top-of-the-Barrier Model surface and transport oreintation on P-type Nanowire FETs Top-of-the-Barrier Model with experimental CV dataTight-binding Virtual Crystal Approximation model for SiGePerformance Analysis of SiGe/Si core/shell NWFETsAtomistic modeling of thermoelectric power factor in Si Nanowires Modified Valence Force Field (MVFF) method for Si and Ge bulk Modified Valence Force Field (MVFF) method for Si nanowires Interface trap density extraction in Si nfinFETs. Simulation of CV curves for biaxially strained SiGe pMOSFETs. Tunability of lattice thermal conductance in Siand Ge nanowires using porosity Strain effects on the phonon thermal properties of ultra-scaled Si nanowires

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