Abhijeet Paul

Analysis of thermoelctric Power-factor in Si nanowires

Atomistic modeling of thermoelectric
power factor in Si Nanowires		 Abhijeet Paul and
Gerhard Klimeck

Objective:

  • Atomistic effects on Themo-electric Power-Factor (PF)
    design in ultra-scaled SiNWs.

Silicon nanowire from Boukai et. al, Nature 2008,
ZT = 1.0 at 200K.

Approach:

  • E(k) Atomistic sp3d5s* basis includes :
  • Crystal symmetry, Valley coupling.
  • Seebeck(S) and Conductance (G):
  • Landauer’s Method
  • PF = S2G
  • Consider [100], [110], [111] SiNWs.

Result:


  • Seebeck Coeff. shows strong directional dependence.

    • Result:


  • W and H less than 6nm improves PF.
  • [111] SiNW shows best ballistic PF.

    • Impact:

    Work Published in IEEE SNW, 2010 doi: 10.1109/SNW.2010.5562583

    Powerpoint slide as ppt, pdf, or as image below.

    Abhijeet Paul's Pages

    Biography Publications Orientation dependance of charge distribution in silicon nanowire transistors. Development of tools and simulators for Discover and Learning. Top-of-the-Barrier Model surface and transport oreintation on P-type Nanowire FETs Top-of-the-Barrier Model with experimental CV dataTight-binding Virtual Crystal Approximation model for SiGePerformance Analysis of SiGe/Si core/shell NWFETsAtomistic modeling of thermoelectric power factor in Si Nanowires Modified Valence Force Field (MVFF) method for Si and Ge bulk Modified Valence Force Field (MVFF) method for Si nanowires Interface trap density extraction in Si nfinFETs. Simulation of CV curves for biaxially strained SiGe pMOSFETs. Tunability of lattice thermal conductance in Siand Ge nanowires using porosity Strain effects on the phonon thermal properties of ultra-scaled Si nanowires

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