Saumitra Mehrotra

Effect of biaxial+uniaxial compressive strain on
SiGe /Si hole bandstructure and pMOSFET

Effect of biaxial+uniaxial compressive strain on SiGe /Si hole bandstructure and pMOSFET Saumitra Raj Mehrotra & Gerhard Klimeck

Objective:

  • Understand the role of compressive strain in SiGe/Si based PMOS devices.
  • Study the performance gain achievable with biaxial+uniaxial strain.

Approach:

  • Utilized the VCA model* developed for SiGe bandstructure.

Result:

  • Linear improvement with application of uniaxial strain with no Vt shift.
  • Uniaxial strain can act as performance booster in SiGe/Si pMOSFETs.

Impact:

  • Results published in TECHCON (Austin 2010)

 

Powerpoint slide as pdf, or as image below.

Saumitra Mehrotra's Pages

Biography Development of Nanowire code on nanoHUB Development of simulation tools for semiconductor course work Performance of Trigated Silicon Nanowire pMOSFETs: Surface and Orientation dependence On validity of the Top of the Barrier model for Quantum Transport in Nanowire MOSFETs Effect of biaxial+uniaxial compressive strain on SiGe /Si hole bandstructure and pMOSFET Atomistic approach to alloy scattering in SiGe Performance enhancement of GaAs UTB pFETs by strain, orientation and body thickness engineering Benchmarking of bulk SiGe and strained SiGe/(100)Si bandstructure using Tight-binding VCA model Ballistic hole injection velocity analysis in Ge UTB pMOSFETs Engineering nanowire n-MOSFETs at Lg < 8nm Atomistic simulation of phonon and alloy limited hole mobility in Si1-xGex nanowires Simulation Study of Thin-Body Ballistic n-MOSFET Involving Transport in Mixed Γ-L valleys Effect of Fin Tapering in Nanoscale Si FinFETs Group Publications

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