Saumitra Mehrotra

Simulation Study of Thin-Body Ballistic n-MOSFET Involving Transport in Mixed Γ-L valleys

Simulation Study of Thin-Body Ballistic n-MOSFET Involving Transport in Mixed Γ-L valleys S. Mehrotra, M. Povolotskyi,D. Elias*, J. Law*, M. Rodwell* & G. Klimeck

Objective:

  • Beating DOS bottleneck issue in extremely thin body (ETB) III-V n-MOSFETs and guide experiments at UCSB.

Approach:

  • Utilize L-valley minima (GaSb and Ge) or ᴦ-L alignment design (GaAs) using (111) wafer orientation.
  • Self-consistent ballistic Top-of-the-Barrier transport model using NEMO5.

Results:

  • Improved current density with (111) designs, that outperform InAs-OI and sSOI for EOT<0.3nm.

Impact:

  • Published Electron Device Letters, IEEE , vol.34, no.9 (July 2013)