Saumitra Mehrotra

Atomistic simulation of phonon and alloy limited hole mobility in Si1-xGex nanowires

Atomistic simulation of phonon and alloy limited hole mobility in Si1-xGex nanowires S. Mehrotra, P. Long, M. Povolotskyi & G. Klimeck

Objective:

  • Understanding the role of alloy + phonon limited hole mobility in SiGe nanowires.

Approach:

  • Semi empirical sp3d5s*-SO to calculate band structure using VCA model (NEMO5).
  • Phonon + Alloy hole mobility using linearized Boltzmann formalism (NEMO5).

Results:

  • SiGe nanowires dominated by phonon scattering.
  • Alloy mobility affects the total mobility leading to ‘U’ shaped hole mobility vs Ge% curve.
  • Ge% > 60-70% needed for improving over Si (<100>,<110> & <111> transport orientations).

Impact:

  • Published Phys. Status Solidi RRL., 2013 doi: 10.1002/pssr.201307124 (Part of Focus Issue on “Semiconductor Nanowires” )



 

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