Saumitra Mehrotra

Atomistic simulation of phonon and alloy limited hole mobility in Si1-xGex nanowires

Atomistic simulation of phonon and alloy limited hole mobility in Si1-xGex nanowires S. Mehrotra, P. Long, M. Povolotskyi & G. Klimeck

Objective:

  • Understanding the role of alloy + phonon limited hole mobility in SiGe nanowires.

Approach:

  • Semi empirical sp3d5s*-SO to calculate band structure using VCA model (NEMO5).
  • Phonon + Alloy hole mobility using linearized Boltzmann formalism (NEMO5).

Results:

  • SiGe nanowires dominated by phonon scattering.
  • Alloy mobility affects the total mobility leading to ‘U’ shaped hole mobility vs Ge% curve.
  • Ge% > 60-70% needed for improving over Si (<100>,<110> & <111> transport orientations).

Impact:

  • Published Phys. Status Solidi RRL., 2013 doi: 10.1002/pssr.201307124 (Part of Focus Issue on “Semiconductor Nanowires” )



 

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Saumitra Mehrotra's Pages

Biography Development of Nanowire code on nanoHUB Development of simulation tools for semiconductor course work Performance of Trigated Silicon Nanowire pMOSFETs: Surface and Orientation dependence On validity of the Top of the Barrier model for Quantum Transport in Nanowire MOSFETs Effect of biaxial+uniaxial compressive strain on SiGe /Si hole bandstructure and pMOSFET Atomistic approach to alloy scattering in SiGe Performance enhancement of GaAs UTB pFETs by strain, orientation and body thickness engineering Benchmarking of bulk SiGe and strained SiGe/(100)Si bandstructure using Tight-binding VCA model Ballistic hole injection velocity analysis in Ge UTB pMOSFETs Engineering nanowire n-MOSFETs at Lg < 8nm Atomistic simulation of phonon and alloy limited hole mobility in Si1-xGex nanowires Simulation Study of Thin-Body Ballistic n-MOSFET Involving Transport in Mixed Γ-L valleys Effect of Fin Tapering in Nanoscale Si FinFETs Group Publications

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