Saumitra Mehrotra

Ballistic hole injection velocity analysis in Ge UTB pMOSFETs: Dependence on body thickness, orientation and strain

Ballistic hole injection velocity analysis in Ge UTB pMOSFETs: Dependence on body thickness, orientation and strain Saumitra Raj Mehrotra & Gerhard Klimeck

Objective:

  • Calibrate Vinj as a device performance metric.
  • Find optimum regime of best performance for Ge UTB for hole transport..

Approach:

  • Extract density of states and density of modes information from 2D E-k.
  • Compute injection velocity at a given charge density.

Results:

  • Demonstrated a direct correlation between theoretical injection velocity and experimental mobility .
  • (110)/<110> Ge UTB found to be having highest injection velocity.

Impact:

  • Results published in ISDRS 2011 (UMCP).



 

Powerpoint slide as pdf, or as image below.