Saumitra Mehrotra

Ballistic hole injection velocity analysis in Ge UTB pMOSFETs: Dependence on body thickness, orientation and strain

Ballistic hole injection velocity analysis in Ge UTB pMOSFETs: Dependence on body thickness, orientation and strain Saumitra Raj Mehrotra & Gerhard Klimeck

Objective:

  • Calibrate Vinj as a device performance metric.
  • Find optimum regime of best performance for Ge UTB for hole transport..

Approach:

  • Extract density of states and density of modes information from 2D E-k.
  • Compute injection velocity at a given charge density.

Results:

  • Demonstrated a direct correlation between theoretical injection velocity and experimental mobility .
  • (110)/<110> Ge UTB found to be having highest injection velocity.

Impact:

  • Results published in ISDRS 2011 (UMCP).



 

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Saumitra Mehrotra's Pages

Biography Development of Nanowire code on nanoHUB Development of simulation tools for semiconductor course work Performance of Trigated Silicon Nanowire pMOSFETs: Surface and Orientation dependence On validity of the Top of the Barrier model for Quantum Transport in Nanowire MOSFETs Effect of biaxial+uniaxial compressive strain on SiGe /Si hole bandstructure and pMOSFET Atomistic approach to alloy scattering in SiGe Performance enhancement of GaAs UTB pFETs by strain, orientation and body thickness engineering Benchmarking of bulk SiGe and strained SiGe/(100)Si bandstructure using Tight-binding VCA model Ballistic hole injection velocity analysis in Ge UTB pMOSFETs Engineering nanowire n-MOSFETs at Lg < 8nm Atomistic simulation of phonon and alloy limited hole mobility in Si1-xGex nanowires Simulation Study of Thin-Body Ballistic n-MOSFET Involving Transport in Mixed Γ-L valleys Effect of Fin Tapering in Nanoscale Si FinFETs Group Publications

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