Saumitra Mehrotra

Performance enhancement of GaAs UTB pFETs by strain, orientation and body thickness engineering

Performance enhancement of GaAs UTB pFETs by strain, orientation and body thickness engineering Saumitra Raj Mehrotra & Gerhard Klimeck

CHALLENGE:

  • III-V materials have high electron mobility but low hole mobility
  • Performance enhancement of GaAs materials for PMOSFET.

OBJECTIVE:

  • Understanding the effect of compressive strain/orientation/body thickness in ON current in GaAs UTB..

APPROACH

  • Calculated ON current using sp3s*d5 TB
    bandstructure model & capacitance model
    including quantum capacitance

IMPACT

  • (110)/<110> provides highest Ion with body thickness scaling.
  • Published in : Device Research Conference (DRC), 2011 69th Annual

 

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