Performance enhancement of GaAs UTB pFETs by
strain, orientation and body thickness engineering
Performance enhancement of GaAs UTB pFETs by
strain, orientation and body thickness engineering |
Saumitra Raj Mehrotra & Gerhard Klimeck |
CHALLENGE:
- III-V materials have high electron
mobility but low hole mobility
- Performance enhancement of GaAs
materials for PMOSFET.
OBJECTIVE:
- Understanding the effect of compressive
strain/orientation/body thickness in ON
current in GaAs UTB..
APPROACH
- Calculated ON current using sp3s*d5 TB
bandstructure model & capacitance model
including quantum capacitance
IMPACT
- (110)/<110> provides highest Ion with
body thickness scaling.
- Published in : Device Research
Conference (DRC), 2011 69th Annual
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Powerpoint slide as pdf, or as image below.
