Saumitra Mehrotra

Benchmarking of bulk SiGe and strained SiGe/(100)Si
bandstructure using Tight-binding VCA model

Benchmarking of bulk SiGe and strained SiGe/(100)Si
bandstructure using Tight-binding VCA model		 Saumitra Raj Mehrotra & Gerhard Klimeck

Objective:

  • SiGe alloy an attractive material for pMOS devices.
  • Benchmarking of bulk relaxed SiGe and compressively strained SiGe/Si using tightbinding (TB) VCA model.

Approach:

  • Bulk :simple VCA is employed for the tight-binding Hamiltonian
  • Strain :two center integrals varied
  • Diagonal shifts introduced for onsite parameters for strain

Results:

  • TB results benchmarked for SiGe relaxed and compressively strained SiGe/(100) cases with experimental data.

Impact:

  • Results published in ISDRS (Wash.DC,Dec 2009).
  • A. Paul S. Mehrotra Elec. Dev. Lett. April
    2010.

 

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Saumitra Mehrotra's Pages

Biography Development of Nanowire code on nanoHUB Development of simulation tools for semiconductor course work Performance of Trigated Silicon Nanowire pMOSFETs: Surface and Orientation dependence On validity of the Top of the Barrier model for Quantum Transport in Nanowire MOSFETs Effect of biaxial+uniaxial compressive strain on SiGe /Si hole bandstructure and pMOSFET Atomistic approach to alloy scattering in SiGe Performance enhancement of GaAs UTB pFETs by strain, orientation and body thickness engineering Benchmarking of bulk SiGe and strained SiGe/(100)Si bandstructure using Tight-binding VCA model Ballistic hole injection velocity analysis in Ge UTB pMOSFETs Engineering nanowire n-MOSFETs at Lg < 8nm Atomistic simulation of phonon and alloy limited hole mobility in Si1-xGex nanowires Simulation Study of Thin-Body Ballistic n-MOSFET Involving Transport in Mixed Γ-L valleys Effect of Fin Tapering in Nanoscale Si FinFETs Group Publications

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