Dr. Caleb Miskin

Senior Director Process Development

ASM

 

Host:  Dr. Rakesh Agrawal

 

Dr. Caleb Miskin completed his B.S. in Chemical Engineering at Brigham Young University in 2010. After a year as a process engineer at I.M. Flash Technologies, Dr. Miskin completed his PhD in Chemical Engineering at Purdue University in 2016 under the direction of Professor Rakesh Agrawal. His thesis was titled "Solution-processed solar cells from nanocrystal inks and molecular solutions." After a 1 year post-doc with Professor Agrawal, he joined ASM as a Senior Process Engineer. Dr. Miskin is currently the global Head of Process Development of the Intrepid ES Epitaxy product line.

 

In recent years, semiconductor devices have transitioned from planar to FinFET and now 3D architectures such as Gate All Around (GAA) or Multi-Bridge Channel (MBC) architectures. This transition to 3D architectures has created new challenges and exciting opportunities for semiconductor crystal growth. In the semiconductor industry, epitaxy is a thermal chemical vapor deposition process used to deposit the highest quality semiconducting layers at the heart of the transistor such as the channel, source, and drain. Epitaxy is also used to deposit the degenerately-doped contact layers that form the bridge between semiconductor and metal interconnects. In this presentation, innovations that have enabled epitaxy for the GAA era such as anisotropic growth, low-temperature deposition, novel surface clean techniques, and process control innovations will be discussed.