%0 Conference Proceedings %B Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International %D 2005 %T Bandstructure and orientation effects in ballistic Si and Ge nanowire FETs %A Wang, Jing %A Rahman, Anisur %A Klimeck, Gerhard %A Lundstrom, Mark %P 4--pp %Z 2005 IEEE International Electron Devices Meeting, Washington, DC, December 5 - 7, 2005. (One of 27 accepted out 120 submitted Modeling and Simulation abstracts); doi : 10.1109/IEDM.2005.1609399 %1 10.1109/IEDM.2005.1609399