%0 Conference Proceedings %B Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International %D 2005 %T Performance of Carbon Nanotube Field Effect Transistors with doped source and drain extensions and arbitrary geometry %A Fiori, Gianluca %A Iannaccone, Giuseppe %A Klimeck, Gerhard %P 522-525 %Z Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International . Page(s):522-525;doi:10.1109/IEDM.2005.1609397 %1 10.1109/IEDM.2005.1609397