@article{1592ilatikhameneh2015, author = "Hesameddin Ilatikhameneh and Rajib Rahman and Joerg Appenzeller and Gerhard Klimeck", title = "Electrically doped WTe2 tunnel transistors", year = "2015", note = " 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 9-11 Sept. 2015, Washington, DC, Page(s): 270 - 272; doi:10.1109/SISPAD.2015.7292311", }