Mathieu Luisier

Injection Velocity in Si, Ge, and InAs NW FETs

Injection Velocity in Si, Ge, and InAs NW FETs Mathieu Luisier, Gerhard Klimeck

Objective:

  • Calculate phonon-limited injection velocity vinj and ballisticity at the top-of-the barrier in n-type Si and InAs and p-type Si and Ge NW FETs with different oritentations

Approach:

  • Tight-binding (sp3d5s*) description of the electron/hole properties
  • Atomistic Representation of the NWs
  • Quantized phonon dispersion (VFF)
  • Quantum transport with NEGF

Results and Impacts:

  • vinj as function of the charge density at the top-of-the-barrier
  • [100] InAs NW highest electron velocity and close to ballistic limit
  • [110] Ge NW highest hole velocity, but 50-60% of ballistic limit

Powerpoint slide as ppt, pdf, or as image below.

Mathieu Luisier's Pages

Biography Band-To-Band-Tunneling in InAs Devices Momentum-Energy-Resolved Transport in Full-Band Simulations Band-To-Band-Tunneling in InAs Devices Charge Self-consistent Full-Band Transport in Realistic Structure Gate Control and Sub-Threshold Swing in BTBT Comparison of in pin InAs Devices Full Band, Atomistic Scattering in Nanowires Phonon-limited Mobility in Si nanowires FETs Injection Velocity in Si, Ge, and InAs NW FETs Electron-Phonon Scattering in NW FETs Line Edge Roughness in GNR Tunneling FETs Petascale Nanoelectronic Device Simulations

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