Mathieu Luisier

Gate Control and Sub-Threshold Swing in BTBT Comparison of in pin InAs Devices

Gate Control and Sub-Threshold Swing in BTBT Comparison of in pin InAs Devices Mathieu Luisier, Gerhard Klimeck

Objective:

  • Low voltage, good turn-on/off switches
  • Develop low sub-threshold swing FETs with band-to-band-tunneling (BTBT)
  • Provide guidance to experiments

Approach:

  • Utilized OMEN - atomistic, full band quantum transport simulator
  • 3 diff. geom., InAs, 20nm gates. 6nm body/diameter, 1nm Oxide, 5e19/cm3

Result:

  • Dramatically different sub-thresholds
  • Slightly different gate controls

Impact:

  • BTBTdevices much more sensitive to smooth band bending than expected
  • gate all-around NW fairs best.

Publication:

Not published yet.

Powerpoint slide as ppt, pdf, or as image below.

Mathieu Luisier's Pages

Biography Band-To-Band-Tunneling in InAs Devices Momentum-Energy-Resolved Transport in Full-Band Simulations Band-To-Band-Tunneling in InAs Devices Charge Self-consistent Full-Band Transport in Realistic Structure Gate Control and Sub-Threshold Swing in BTBT Comparison of in pin InAs Devices Full Band, Atomistic Scattering in Nanowires Phonon-limited Mobility in Si nanowires FETs Injection Velocity in Si, Ge, and InAs NW FETs Electron-Phonon Scattering in NW FETs Line Edge Roughness in GNR Tunneling FETs Petascale Nanoelectronic Device Simulations

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