Mathieu Luisier

Band-To-Band-Tunneling in InAs Devices Charge Self-consistent Full-Band Transport in Realistic Structure

Band-To-Band-Tunneling in InAs Devices Charge Self-consistent Full-Band Transport in Realistic Structure Mathieu Luisier, Gerhard Klimeck

Objective:

  • Demonstrate BTBT capability

Approach:

  • Full BTBT current-voltage with full charge selfconsistency

Result:

  • First full band / atomistic charge-self-consistent BTBT simulation
  • Full ambipolar carrier treatment

Powerpoint slide as ppt, pdf, or as image below.

Mathieu Luisier's Pages

Biography Band-To-Band-Tunneling in InAs Devices Momentum-Energy-Resolved Transport in Full-Band Simulations Band-To-Band-Tunneling in InAs Devices Charge Self-consistent Full-Band Transport in Realistic Structure Gate Control and Sub-Threshold Swing in BTBT Comparison of in pin InAs Devices Full Band, Atomistic Scattering in Nanowires Phonon-limited Mobility in Si nanowires FETs Injection Velocity in Si, Ge, and InAs NW FETs Electron-Phonon Scattering in NW FETs Line Edge Roughness in GNR Tunneling FETs Petascale Nanoelectronic Device Simulations

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